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1. 发明授权

US08785910B2 Thin film transistor, display device including the same, and method of manufacturing the display device 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US08785910B2
公开(公告)日：2014-07-22
申请号：US12926665
申请日：2010-12-02
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L29/04 , H01L29/10 , H01L21/84 , H01L21/00 , H01L31/00
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/78678
摘要： A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要翻译：薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

2. 发明授权

US08405084B2 Organic light emitting diode display and method for manufacturing the same 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US08405084B2
公开(公告)日：2013-03-26
申请号：US12926377
申请日：2010-11-15
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
IPC分类号： H01L29/04
CPC分类号： H01L27/3248 , H01L27/3262
摘要： An organic light emitting diode display includes a substrate main body, a polysilicon semiconductor layer on the substrate main body, a gate insulating layer covering the semiconductor layer, and a gate electrode and a pixel electrode on the gate insulating layer, the gate electrode and the pixel electrode each including a transparent conductive layer portion with a gate metal layer portion on the transparent conductive layer portion, and the pixel electrode including a light emitting area having the transparent conductive layer portion and a non-light emitting area having both the transparent conductive layer portion and the gate metal layer portion.
摘要翻译：有机发光二极管显示器包括基板主体，在基板主体上的多晶硅半导体层，覆盖半导体层的栅极绝缘层，栅极绝缘层上的栅电极和像素电极，栅电极和每个像素电极包括在透明导电层部分上具有栅极金属层部分的透明导电层部分，并且所述像素电极包括具有透明导电层部分的发光区域和具有透明导电层的非发光区域部分和栅极金属层部分。

3. 发明授权

US08288216B2 Thin film transistor and method of fabricating the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08288216B2
公开(公告)日：2012-10-16
申请号：US12753732
申请日：2010-04-02
申请人： Jin-Hee Kang , Chun-Gi You , Sun Park , Jong-Hyun Park , Yul-Kyu Lee
发明人： Jin-Hee Kang , Chun-Gi You , Sun Park , Jong-Hyun Park , Yul-Kyu Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/78609 , H01L29/78618
摘要： A thin film transistor (TFT) and a method of fabricating the same are disclosed. The TFT includes a substrate, a gate electrode disposed over the substrate, a gate insulating layer disposed over the gate electrode, a semiconductor layer disposed over the gate insulating layer and including a polycrystalline silicon (poly-Si) layer, an ohmic contact layer disposed over a predetermined region of the semiconductor layer, an insulating interlayer disposed over substantially an entire surface of the substrate including the ohmic contact layer, and source and drain electrodes electrically connected to the ohmic contact layer through contact holes formed in the interlayer insulating layer. A barrier layer is interposed between the semiconductor layer and the ohmic contact layer. Thus, when an off-current of a bottom-gate-type TFT is controlled, degradation of characteristics due to a leakage current may be prevented using a simple process.
摘要翻译：公开了一种薄膜晶体管（TFT）及其制造方法。 TFT包括衬底，设置在衬底上的栅电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上方并包括多晶硅（poly-Si）层的半导体层，设置的欧姆接触层超过半导体层的预定区域，设置在包括欧姆接触层的基板的基本上整个表面上的绝缘夹层，以及通过形成在层间绝缘层中的接触孔与欧姆接触层电连接的源极和漏极。阻挡层介于半导体层和欧姆接触层之间。因此，当控制底栅型TFT的截止电流时，可以通过简单的处理来防止由漏电流引起的特性的劣化。

4. 发明授权

US08952358B2 Organic light-emitting display apparatus and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08952358B2
公开(公告)日：2015-02-10
申请号：US13211655
申请日：2011-08-17
申请人： Sun Park , Chun-Gi You , Jong-Hyun Park , Jin-Hee Kang , Yul Kyu Lee
发明人： Sun Park , Chun-Gi You , Jong-Hyun Park , Jin-Hee Kang , Yul Kyu Lee
IPC分类号： H01L51/52 , H01L51/00
CPC分类号： H01L51/5284 , H01L51/0037
摘要： An organic light-emitting display apparatus including a substrate; a black matrix layer formed over the substrate; an insulating layer formed over the black matrix layer; a thin film transistor (TFT) formed over the insulating layer; a pixel electrode connected to the TFT; and an organic layer formed over the pixel electrode. At least one hole is formed in at least one of the black matrix layer and the insulating layer, in a region where the black matrix layer and the insulating layer overlap each other.
摘要翻译：一种有机发光显示装置，包括：基板; 形成在基板上的黑矩阵层; 形成在黑矩阵层上的绝缘层; 形成在所述绝缘层上的薄膜晶体管（TFT）; 连接到TFT的像素电极; 以及形成在像素电极上方的有机层。在黑矩阵层和绝缘层彼此重叠的区域中，在黑矩阵层和绝缘层中的至少一个中形成至少一个孔。

5. 发明授权

US08558239B2 Organic light emitting display device and manufacturing method thereof 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08558239B2
公开(公告)日：2013-10-15
申请号：US12904672
申请日：2010-10-14
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
IPC分类号： H01L27/14
CPC分类号： H01L27/3262 , H01L27/3258
摘要： An organic light emitting display having an active layer of a thin film transistor formed on a substrate, a first conductive layer formed at an edge of the active layer, a first insulation layer formed on the substrate and the first conductive layer, a second conductive layer corresponding to a central area of the active layer formed on the first insulation layer, a fanout lower electrode separated a predetermined distance from the second conductive layer, a pixel electrode, a third conductive layer formed on the second conductive layer, a fanout upper electrode formed on the fanout lower electrode, a second insulation layer formed on the third conductive layer, the fanout upper electrode, and the pixel electrode, and source and drain electrodes contacting the pixel electrode and formed on the second insulation layer.
摘要翻译：一种有机发光显示器，其具有形成在基板上的薄膜晶体管的有源层，形成在所述有源层的边缘的第一导电层，形成在所述基板上的第一绝缘层和所述第一导电层，第二导电层对应于形成在第一绝缘层上的有源层的中心区域，与第二导电层分隔预定距离的扇出下电极，像素电极，形成在第二导电层上的第三导电层，形成的扇出上电极在扇出的下电极上，形成在第三导电层，扇出上电极和像素电极上的第二绝缘层，以及与第二绝缘层形成的源电极和漏极接触的源极和漏极。

6. 发明授权

US08395160B2 Organic light emitting display apparatus and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08395160B2
公开(公告)日：2013-03-12
申请号：US12943886
申请日：2010-11-10
申请人： Sun Park , Chun-Gi You , Jong-Hyun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Sun Park , Chun-Gi You , Jong-Hyun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L51/5215 , H01L27/3248
摘要： An organic light emitting display apparatus and a method of manufacturing the organic light emitting display apparatus, whereby the manufacturing process is simplified and the electric characteristics of the organic light emitting display apparatus are improved. The organic light emitting display apparatus includes: a gate electrode that includes a first conductive layer including ITO, a second conductive layer on the first conductive layer, a third conductive layer on the second conductive layer and including ITO, and a fourth conductive layer on the third conductive layer and including IZO or AZO; and a pixel electrode formed in the same layer level as the gate electrode and including a first electrode layer that includes ITO, a second electrode layer on the first electrode layer, a third electrode layer on the second electrode layer and including ITO, and a fourth electrode layer on the third electrode layer and including IZO or AZO.
摘要翻译：一种有机发光显示装置和制造有机发光显示装置的方法，由此简化了制造工艺，并提高了有机发光显示装置的电特性。有机发光显示装置包括：栅电极，其包括第一导电层，包括ITO，第一导电层上的第二导电层，第二导电层上的第三导电层，包括ITO;以及第四导电层，第三导电层并且包括IZO或AZO; 和形成为与栅极电极相同的层级的像素电极，并且包括包括ITO的第一电极层，在第一电极层上的第二电极层，在第二电极层上的包括ITO的第三电极层，以及第四电极层电极层，并且包括IZO或AZO。

7. 发明申请

US20110133195A1 Thin film transistor, display device including the same, and method of manufacturing the display device 有权
标题翻译：薄膜晶体管，包括其的显示装置及其制造方法
公开(公告)号：US20110133195A1
公开(公告)日：2011-06-09
申请号：US12926665
申请日：2010-12-02
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L27/15 , H01L29/12 , H01L21/336
CPC分类号： H01L29/42384 , H01L27/12 , H01L27/1281 , H01L29/04 , H01L29/78678
摘要： A thin film transistor, a display device including the same, and a method of manufacturing the display device, the thin film transistor including a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; and source/drain electrodes electrically connected with the semiconductor layer, wherein the gate electrode has a thickness of about 500 Å to about 1500 Å and the gate insulating layer has a thickness of about 1600 Å to about 2500 Å.
摘要翻译：薄膜晶体管，包括该薄膜晶体管的显示装置和制造该显示装置的方法，该薄膜晶体管包括一基板; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的半导体层; 以及与半导体层电连接的源极/漏极，其中栅电极具有大约至大约的厚度，并且栅极绝缘层具有大约至大约的厚度。

8. 发明申请

US20110121302A1 ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110121302A1
公开(公告)日：2011-05-26
申请号：US12954544
申请日：2010-11-24
申请人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
发明人： Yul-Kyu Lee , Chun-Gi You , Sun Park , Jong-Hyun Park , Jin-Hee Kang
IPC分类号： H01L51/50 , H01L51/40
CPC分类号： H01L27/3262
摘要： An organic light emitting display device with a simplified manufacturing process and improved electrical characteristics, along with a method of manufacturing the device, are disclosed. The device includes: a substrate having a display area and a non-display area; a thin film transistor (TFT) in the display area; a wiring portion in the non-display area; an intermediate layer electrically connected to the TFT and including an organic light emitting layer; and a counter electrode on the intermediate layer. The TFT includes an active layer, a gate electrode, and source/drain electrodes electrically connected to the active layer. The source/drain electrodes include a first conductive layer, a second conductive layer, and a third conductive layer that are sequentially stacked. The wiring portion includes the same material as the first conductive layer. One of the source/drain electrodes is longer than the other, to function as a pixel electrode, and is electrically connected to the intermediate layer.
摘要翻译：公开了一种具有简化的制造工艺和改进的电气特性的有机发光显示装置，以及制造该装置的方法。该装置包括：具有显示区域和非显示区域的基板; 在显示区域中的薄膜晶体管（TFT）; 非显示区域中的布线部分; 电连接到TFT并包括有机发光层的中间层; 和中间层上的对电极。 TFT包括有源层，栅电极和电连接到有源层的源/漏电极。源极/漏极包括依次堆叠的第一导电层，第二导电层和第三导电层。布线部分包括与第一导电层相同的材料。源/漏电极中的一个比另一个长，用作像素电极，并且电连接到中间层。

9. 发明申请

US20110101353A1 Display device and method of manufacturing the same 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20110101353A1
公开(公告)日：2011-05-05
申请号：US12805994
申请日：2010-08-27
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L33/00
CPC分类号： H01L29/78633 , H01L27/3272 , H01L51/5281
摘要： A display device and a method of manufacturing the same, the display device including a substrate, a semiconductor layer on the substrate, a light shielding layer on the substrate, the light shielding layer and the semiconductor layer being positioned directly on a same layer, a gate insulating layer on the substrate covering the semiconductor layer and the light shielding layer, and a gate electrode on the gate insulating layer, the gate electrode corresponding to a channel region of the semiconductor layer.
摘要翻译：一种显示装置及其制造方法，所述显示装置包括基板，所述基板上的半导体层，所述基板上的遮光层，所述遮光层和所述半导体层直接位于同一层上，覆盖半导体层和遮光层的基板上的栅极绝缘层，栅极绝缘层上的栅极电极，对应于半导体层的沟道区域的栅电极。

10. 发明授权

US08450159B2 Thin film transistor, fabrication method of same, and display device having the same 有权
标题翻译：薄膜晶体管及其制造方法以及具有该薄膜晶体管的显示装置
公开(公告)号：US08450159B2
公开(公告)日：2013-05-28
申请号：US12929733
申请日：2011-02-11
申请人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
发明人： Jong-Hyun Park , Chun-Gi You , Sun Park , Jin-Hee Kang , Yul-Kyu Lee
IPC分类号： H01L21/336
CPC分类号： H01L51/5281 , H01L27/1214 , H01L27/1285 , H01L27/3262 , H01L27/3272 , H01L29/66765 , H01L29/78678
摘要： A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm.
摘要翻译：薄膜晶体管及其制造方法以及包括该薄膜晶体管的显示装置，所述薄膜晶体管包括基板; 基板上的多晶硅半导体层; 以及在所述半导体层和所述基板之间的金属图案，所述金属图案与所述半导体层绝缘，其中所述半导体层的多晶硅包括平行于结晶生长方向的晶界，并且所述多晶硅半导体层的表面粗糙度被限定在其表面的最低峰和最高峰之间的距离小于约15nm。

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