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1. 发明授权

US08004328B2 AC-coupling phase interpolator and delay-locked loop using the same 失效
标题翻译：交流耦合相位内插器和使用其的延迟锁定环路
公开(公告)号：US08004328B2
公开(公告)日：2011-08-23
申请号：US12570186
申请日：2009-09-30
申请人： Jin-Gook Kim , Kwang-II Park , Seung-Jun Bae , Si-Hong Kim , Dae-Hyun Chung
发明人： Jin-Gook Kim , Kwang-II Park , Seung-Jun Bae , Si-Hong Kim , Dae-Hyun Chung
IPC分类号： H03L7/06
CPC分类号： H03L7/07 , H03K5/13 , H03K2005/00052 , H03L7/0814
摘要： An AC-coupling phase interpolator and a DLL using the same are provided. The AC-coupling phase interpolator includes a coupling capacitor generating and outputting a coupling signal by AC-coupling to an interpolation signal obtained by phase-interpolating an input signal. Thereby, it is possible to correct duty of an input signal and adjust the level of an output signal.
摘要翻译：提供AC耦合相位内插器和使用它的DLL。 AC耦合相位内插器包括耦合电容器，其通过AC耦合产生并输出耦合信号，所述耦合信号通过对输入信号进行相位插值而获得。由此，可以校正输入信号的占空比并调整输出信号的电平。

2. 发明申请

US20100079180A1 AC-COUPLING PHASE INTERPOLATOR AND DELAY-LOCKED LOOP USING THE SAME 失效
标题翻译：交流耦合相位插补器和延迟锁定环使用相同
公开(公告)号：US20100079180A1
公开(公告)日：2010-04-01
申请号：US12570186
申请日：2009-09-30
申请人： JIN-GOOK KIM , Kwang-II Park , Seung-Jun Bae , Si-Hong Kim , Dae-Hyun Chung
发明人： JIN-GOOK KIM , Kwang-II Park , Seung-Jun Bae , Si-Hong Kim , Dae-Hyun Chung
IPC分类号： H03L7/00 , H03H11/16
CPC分类号： H03L7/07 , H03K5/13 , H03K2005/00052 , H03L7/0814
摘要： An AC-coupling phase interpolator and a DLL using the same are provided. The AC-coupling phase interpolator includes a coupling capacitor generating and outputting a coupling signal by AC-coupling to an interpolation signal obtained by phase-interpolating an input signal. Thereby, it is possible to correct duty of an input signal and adjust the level of an output signal.
摘要翻译：提供AC耦合相位内插器和使用它的DLL。 AC耦合相位内插器包括耦合电容器，其通过AC耦合产生并输出耦合信号，所述耦合信号通过对输入信号进行相位插值而获得。由此，可以校正输入信号的占空比并调整输出信号的电平。

3. 发明授权

US07737748B2 Level shifter of semiconductor device and method for controlling duty ratio in the device 有权
标题翻译：半导体器件的电平移位器和装置中占空比的控制方法
公开(公告)号：US07737748B2
公开(公告)日：2010-06-15
申请号：US11986841
申请日：2007-11-27
申请人： Jin-Gook Kim , Seung-Jun Bae , Dae-Hyun Chung
发明人： Jin-Gook Kim , Seung-Jun Bae , Dae-Hyun Chung
IPC分类号： H03K3/017
CPC分类号： H03K3/35613 , H03K3/017
摘要： A level shifter of a semiconductor device and method of controlling a duty ratio are provided. The level shifter includes first and second PMOS transistors having sources to which a power supply voltage is applied, first and second NMOS transistors having sources to which a ground voltage is applied, third and fourth NMOS transistors having sources connected to drains of the first and second NMOS transistors and gates to which the power supply voltage is applied; and a voltage controlled delay unit for receiving an input signal applied to a gate of the first NMOS transistor, inverting a level of the input signal, determining whether a voltage of an inverted input signal should be charged in response to a voltage control signal, outputting the voltage of the inverted input signal of which delay time is controlled, and applying the inverted input signal to a gate of the second NMOS transistor.
摘要翻译：提供半导体器件的电平移位器和控制占空比的方法。电平移位器包括具有施加电源电压的源的第一和第二PMOS晶体管，具有施加接地电压的源的第一和第二NMOS晶体管，具有连接到第一和第二漏极的漏极的源的第三和第四NMOS晶体管施加电源电压的NMOS晶体管和栅极; 以及电压控制延迟单元，用于接收施加到第一NMOS晶体管的栅极的输入信号，反相输入信号的电平，确定反相输入信号的电压是否应当响应于电压控制信号而被充电，输出控制延迟时间的反相输入信号的电压，并将反相输入信号施加到第二NMOS晶体管的栅极。

4. 发明申请

US20080186075A1 Level shifter of semiconductor device and method for controlling duty ratio in the device 有权
标题翻译：半导体器件的电平移位器和装置中占空比的控制方法
公开(公告)号：US20080186075A1
公开(公告)日：2008-08-07
申请号：US11986841
申请日：2007-11-27
申请人： Jin-Gook Kim , Seung-Jun Bae , Dae-Hyun Chung
发明人： Jin-Gook Kim , Seung-Jun Bae , Dae-Hyun Chung
IPC分类号： H03L5/00
CPC分类号： H03K3/35613 , H03K3/017
摘要： A level shifter of a semiconductor device and method of controlling a duty ratio are provided. The level shifter includes first and second PMOS transistors having sources to which a power supply voltage is applied, first and second NMOS transistors having sources to which a ground voltage is applied, third and fourth NMOS transistors having sources connected to drains of the first and second NMOS transistors and gates to which the power supply voltage is applied; and a voltage controlled delay unit for receiving an input signal applied to a gate of the first NMOS transistor, inverting a level of the input signal, determining whether a voltage of an inverted input signal should be charged in response to a voltage control signal, outputting the voltage of the inverted input signal of which delay time is controlled, and applying the inverted input signal to a gate of the second NMOS transistor.
摘要翻译：提供半导体器件的电平移位器和控制占空比的方法。电平移位器包括具有施加电源电压的源的第一和第二PMOS晶体管，具有施加接地电压的源的第一和第二NMOS晶体管，具有连接到第一和第二漏极的漏极的源的第三和第四NMOS晶体管施加电源电压的NMOS晶体管和栅极; 以及电压控制延迟单元，用于接收施加到第一NMOS晶体管的栅极的输入信号，反相输入信号的电平，确定反相输入信号的电压是否应当响应于电压控制信号而被充电，输出控制延迟时间的反相输入信号的电压，并将反相输入信号施加到第二NMOS晶体管的栅极。

5. 发明授权

US08654593B2 Stacked semiconductor memory device, memory system including the same, and method of repairing defects of through silicon vias 有权
标题翻译：堆叠的半导体存储器件，包括其的存储器系统以及通过硅通孔修复缺陷的方法
公开(公告)号：US08654593B2
公开(公告)日：2014-02-18
申请号：US13085776
申请日：2011-04-13
申请人： Tae-Young Oh , Kwang-Il Park , Yun-Seok Yang , Young-Soo Sohn , Si-Hong Kim , Seung-Jun Bae
发明人： Tae-Young Oh , Kwang-Il Park , Yun-Seok Yang , Young-Soo Sohn , Si-Hong Kim , Seung-Jun Bae
IPC分类号： G11C7/10
CPC分类号： G11C29/702 , G11C7/10 , H01L22/22 , H01L25/0657 , H01L25/18 , H01L2224/16 , H01L2225/06541
摘要： A stacked semiconductor memory device according to the inventive concepts may include a plurality of memory chips stacked above a processor chip, a plurality of TSVs, and I/O buffers. The TSVs may pass through the memory chips and are connected to the processor chip. I/O buffers may be coupled between all or part of the memory chips and the TSVs and may be selectively activated on the basis of defective states of the TSVs.
摘要翻译：根据本发明构思的叠层半导体存储器件可以包括堆叠在处理器芯片上方的多个存储器芯片，多个TSV和I / O缓冲器。 TSV可以通过存储器芯片并且连接到处理器芯片。 I / O缓冲器可以耦合在所有或部分存储器芯片和TSV之间，并且可以基于TSV的故障状态来选择性地激活。

6. 发明申请

US20140019833A1 MEMORY SYSTEM AND METHOD 审中-公开
标题翻译：记忆系统和方法
公开(公告)号：US20140019833A1
公开(公告)日：2014-01-16
申请号：US14031620
申请日：2013-09-19
申请人： Seung-Jun Bae , Kwang-II Park , Young-Soo Sohn , Young-Hyun Jun , Joo-Sun Choi , Tae-Young Oh
发明人： Seung-Jun Bae , Kwang-II Park , Young-Soo Sohn , Young-Hyun Jun , Joo-Sun Choi , Tae-Young Oh
IPC分类号： G06F11/10
CPC分类号： G06F11/1004 , H03M13/09
摘要： A memory system includes a memory controller and a memory device. The memory device exchanges data through a first channel with the memory controller, exchanges a first cyclic redundancy check (CRC) code associated with the data through a second channel with the memory controller, and receives a command/address packet including a second CRC code associated with a command/address from the memory controller through a third channel.
摘要翻译：存储器系统包括存储器控制器和存储器件。存储器件通过第一通道与存储器控制器交换数据，通过与存储器控制器的第二通道交换与数据相关联的第一循环冗余校验（CRC）代码，并且接收包括相关联的第二CRC码的命令/地址分组具有来自存储器控制器的命令/地址通过第三通道。

7. 发明授权

US08467255B2 Data receiver having an integration unit and a sense amplification unit, and semiconductor memory device including the same 有权
标题翻译：具有集成单元和感测放大单元的数据接收器以及包括该单元的半导体存储器件
公开(公告)号：US08467255B2
公开(公告)日：2013-06-18
申请号：US13162948
申请日：2011-06-17
申请人： Dae-Hyun Kim , Seung-Jun Bae
发明人： Dae-Hyun Kim , Seung-Jun Bae
IPC分类号： G11C7/22
CPC分类号： G11C7/1012 , G11C7/1048 , G11C7/1084 , G11C7/1087
摘要： A data receiver in a memory device includes an integration unit, a sense amplification unit and a latch unit. The integration unit integrates a data signal to generate a first equalization signal in response to a sampling feedback signal. The data signal includes a plurality of data that are sequentially received. The sense amplification unit senses the first equalization signal to generate a second equalization signal in response to a sensing feedback signal. The latch unit latches the second equalization signal to generate a sampling data signal
摘要翻译：存储器件中的数据接收器包括积分单元，感测放大单元和锁存单元。积分单元积分数据信号，以响应于采样反馈信号产生第一均衡信号。数据信号包括顺序接收的多个数据。感测放大单元响应于感测反馈信号感测第一均衡信号以产生第二均衡信号。锁存单元锁存第二均衡信号以产生采样数据信号

8. 发明授权

US08254201B2 Semiconductor memory device having power-saving effect 有权
标题翻译：具有省电效果的半导体存储器件
公开(公告)号：US08254201B2
公开(公告)日：2012-08-28
申请号：US12797791
申请日：2010-06-10
申请人： Young-Soo Sohn , Kwang-Il Park , Kyoung-Ho Kim , Seung-Jun Bae
发明人： Young-Soo Sohn , Kwang-Il Park , Kyoung-Ho Kim , Seung-Jun Bae
IPC分类号： G11C8/18 , G11C7/10
CPC分类号： G11C7/22 , G11C7/1078 , G11C7/1084 , G11C8/18 , G11C2207/2227 , G11C2207/2272
摘要： A semiconductor memory device includes a memory cell array, a controller, and a data input/output (I/O) unit. The memory cell array includes a plurality of memory cells and is configured to store data. The controller is configured to enable a write clock signal in response to an active command when a write latency of the semiconductor device is less than a reference write latency and disable the write clock signal during a disabling period in which read data is output from the semiconductor device. The data I/O unit is configured to receive data in response to the write clock signal and output the data to the memory cell array.
摘要翻译：半导体存储器件包括存储单元阵列，控制器和数据输入/输出（I / O）单元。存储单元阵列包括多个存储单元，并被配置为存储数据。当半导体器件的写入延迟小于参考写入延迟并且在从半导体输出读取数据的禁用期间禁止写入时钟信号时，控制器被配置为响应于有效命令来使能写入时钟信号设备。数据I / O单元被配置为响应于写时钟信号接收数据并将数据输出到存储单元阵列。

9. 发明授权

US08199035B2 Method, device, and system for data communication with preamble for reduced switching noise 有权
标题翻译：用于与前同步码进行数据通信以减少开关噪声的方法，设备和系统
公开(公告)号：US08199035B2
公开(公告)日：2012-06-12
申请号：US13069259
申请日：2011-03-22
申请人： Seung-Jun Bae , Kwang-Chol Choe , Se-Won Seo
发明人： Seung-Jun Bae , Kwang-Chol Choe , Se-Won Seo
IPC分类号： H03M7/00
CPC分类号： H03M5/145
摘要： A data communication device or system includes a preamble unit and a data interface. The preamble unit generates or detects a first preamble having a first length for a first data line, and generates or detects a second preamble having a second length for a second data line. The first length is different from the second length, and data on the first and second data lines form parallel data. The data interface communicates a first data with the first preamble via the first data line and communicates a second data with the second preamble via the second data line. The respective length and/or respective pattern of each preamble are adjustable and/or programmable.
摘要翻译：数据通信设备或系统包括前同步码单元和数据接口。前导码单元产生或检测具有第一数据线的第一长度的第一前同步码，并且生成或检测第二数据线具有第二长度的第二前同步码。第一长度与第二长度不同，第一和第二数据线上的数据形成并行数据。所述数据接口经由所述第一数据线与所述第一前同步码传送第一数据，并经由所述第二数据线与所述第二前同步码传送第二数据。每个前导码的相应长度和/或相应模式是可调节的和/或可编程的。

10. 发明授权

US08159275B2 Phase-locked loop and bias generator 有权
标题翻译：锁相环和偏置发生器
公开(公告)号：US08159275B2
公开(公告)日：2012-04-17
申请号：US12627730
申请日：2009-11-30
申请人： Young-Sik Kim , Seung-Jun Bae , Sang-Hyup Kwak
发明人： Young-Sik Kim , Seung-Jun Bae , Sang-Hyup Kwak
IPC分类号： H03L7/06
CPC分类号： H03L7/08
摘要： A phase-locked loop (PLL) having a bias generator capable of reducing noise is provided. In the PLL, a voltage controlled oscillator is driven using a regulator. The bias generator, which applies a bias voltage to the regulator, is configured to have opposite power noise characteristics to the power noise characteristics of the regulator, such that the occurrence of jitter in the PLL is reduced.
摘要翻译：提供了具有能够降低噪声的偏置发生器的锁相环（PLL）。在PLL中，使用稳压器驱动压控振荡器。将偏置电压施加到调节器的偏置发生器被配置为具有与调节器的功率噪声特性相反的功率噪声特性，使得PLL中的抖动的发生减少。

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