会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 平板显示装置及其制造方法
    • US20110297945A1
    • 2011-12-08
    • US13114976
    • 2011-05-24
    • Jin-Goo JungDeok-Hoi KimSeung-Gyu TaeYu-Bong WonSung-Woo Jung
    • Jin-Goo JungDeok-Hoi KimSeung-Gyu TaeYu-Bong WonSung-Woo Jung
    • H01L33/16
    • H01L28/60G02F1/136213G02F1/136286G02F2201/40H01L27/1255H01L27/1288
    • A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.
    • 一种制造平板显示装置的方法包括:在衬底上形成薄膜晶体管(TFT)的半导体层; 在栅电极和半导体层之间的栅极绝缘层在半导体层上形成栅电极,并用离子杂质掺杂半导体层的源区和漏区; 顺序地形成第一导电层,第一绝缘层和第二导电层,并且通过对第一导电层,第一绝缘层和第二导电层进行构图而形成与TFT远离一定距离的电容器; 形成第二绝缘层,以及形成通过所述第二绝缘层的接触孔,所述接触孔暴露所述源极和漏极区域和所述第二导电层的部分; 以及通过所述接触孔形成分别接触所述源极和漏极区域以及所述第二导电层的源极和漏极。
    • 2. 发明授权
    • Flat panel display device and method of manufacturing the same
    • 平板显示装置及其制造方法
    • US08841669B2
    • 2014-09-23
    • US13114976
    • 2011-05-24
    • Jin-Goo JungDeok-Hoi KimSeung-Gyu TaeYu-Bong WonSung-Woo Jung
    • Jin-Goo JungDeok-Hoi KimSeung-Gyu TaeYu-Bong WonSung-Woo Jung
    • H01L31/00
    • H01L28/60G02F1/136213G02F1/136286G02F2201/40H01L27/1255H01L27/1288
    • A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.
    • 一种制造平板显示装置的方法包括:在衬底上形成薄膜晶体管(TFT)的半导体层; 在栅电极和半导体层之间的栅极绝缘层在半导体层上形成栅电极,并用离子杂质掺杂半导体层的源区和漏区; 顺序地形成第一导电层,第一绝缘层和第二导电层,并且通过对第一导电层,第一绝缘层和第二导电层进行构图而形成与TFT远离一定距离的电容器; 形成第二绝缘层,以及形成通过所述第二绝缘层的接触孔,所述接触孔暴露所述源极和漏极区域和所述第二导电层的部分; 以及通过所述接触孔形成分别接触所述源极和漏极区域以及所述第二导电层的源极和漏极。
    • 5. 发明申请
    • Flat panel display apparatus
    • 平板显示装置
    • US20120162050A1
    • 2012-06-28
    • US13137478
    • 2011-08-19
    • Zhi-Feng ZhanSeung-Gyu TaeSung-Hoon MoonDeok-Hoi Kim
    • Zhi-Feng ZhanSeung-Gyu TaeSung-Hoon MoonDeok-Hoi Kim
    • G09G3/20
    • G09G3/36G02F1/136213G02F2001/136218G06F1/00H01L27/1255
    • A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.
    • 平板显示装置包括在基板上的第一像素区域,并由第一栅极线和数据线之间的交点限定。 第一像素区域包括第一晶体管和第一电容器,并被第一像素电极覆盖。 该装置包括与第一像素区域相邻并由第二栅极线和数据线之间的交点限定的第二像素区域。 第二像素区域被第二像素电极覆盖。 第一栅极线位于第一像素电极和第二像素电极之间。 第二电容器在第二像素区域中,第二电容器包括第一透明导电层和第二透明导电层。 透明屏蔽部分从第二电容器的第二透明导电层向第一像素区域延伸以与第一栅极线重叠。
    • 6. 发明授权
    • Flat panel display apparatus
    • 平板显示装置
    • US08723770B2
    • 2014-05-13
    • US13137478
    • 2011-08-19
    • Zhi-Feng ZhanSeung-Gyu TaeSung-Hoon MoonDeok-Hoi Kim
    • Zhi-Feng ZhanSeung-Gyu TaeSung-Hoon MoonDeok-Hoi Kim
    • G09G3/36
    • G09G3/36G02F1/136213G02F2001/136218G06F1/00H01L27/1255
    • A flat panel display apparatus includes a first pixel region on a substrate and defined by an intersection between a first gate line and a data line. The first pixel region includes a first transistor and a first capacitor and is covered by a first pixel electrode. The apparatus includes a second pixel region adjacent to the first pixel region and defined by an intersection between a second gate line and the data line. The second pixel region is covered by a second pixel electrode. The first gate line is positioned between the first pixel electrode and the second pixel electrode. A second capacitor is in the second pixel region, and the second capacitor includes a first transparent conductive layer and a second transparent conductive layer. A transparent shielding portion extends from the second transparent conductive layer of the second capacitor toward the first pixel region to overlap with the first gate line.
    • 平板显示装置包括在基板上的第一像素区域,并由第一栅极线和数据线之间的交点限定。 第一像素区域包括第一晶体管和第一电容器,并被第一像素电极覆盖。 该装置包括与第一像素区域相邻并由第二栅极线与数据线之间的交点限定的第二像素区域。 第二像素区域被第二像素电极覆盖。 第一栅极线位于第一像素电极和第二像素电极之间。 第二电容器在第二像素区域中,第二电容器包括第一透明导电层和第二透明导电层。 透明屏蔽部分从第二电容器的第二透明导电层向第一像素区域延伸以与第一栅极线重叠。
    • 8. 发明申请
    • DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 显示装置及其制造方法
    • US20120326151A1
    • 2012-12-27
    • US13283380
    • 2011-10-27
    • Zhi Feng ZhanSeung-Gyu TaeDeok-Hoi Kim
    • Zhi Feng ZhanSeung-Gyu TaeDeok-Hoi Kim
    • H01L33/08H01L33/16
    • H01L27/1255G02F1/136213G02F1/136227
    • A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.
    • 显示装置包括:绝缘基板,包括第一区域和第二区域; 在包括栅电极,源电极和漏电极的第一区域上形成的薄膜晶体管(TFT); 以及形成在所述第二区域上的存储电容器,其中所述存储电容器包括第一电极,第二电极和第一层间绝缘膜,其中所述第一和第二电极彼此面对并且由透明导电材料制成,其中所述中间层 绝缘膜插入在第一电极和第二电极之间,并且其中第一电极形成在作为一体的第一基板的整个表面上并且接收公共电压,并且第二电极电连接到漏电极。
    • 10. 发明授权
    • Display device and method of manufacturing the same
    • 显示装置及其制造方法
    • US09240423B2
    • 2016-01-19
    • US13283380
    • 2011-10-27
    • Zhi Feng ZhanSeung-Gyu TaeDeok-Hoi Kim
    • Zhi Feng ZhanSeung-Gyu TaeDeok-Hoi Kim
    • H01L33/08H01L33/16H01L27/12G02F1/1362
    • H01L27/1255G02F1/136213G02F1/136227
    • A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.
    • 显示装置包括:绝缘基板,包括第一区域和第二区域; 在包括栅电极,源电极和漏电极的第一区域上形成的薄膜晶体管(TFT); 以及形成在所述第二区域上的存储电容器,其中所述存储电容器包括第一电极,第二电极和第一层间绝缘膜,其中所述第一和第二电极彼此面对并且由透明导电材料制成,其中所述中间层 绝缘膜插入在第一电极和第二电极之间,并且其中第一电极形成在作为一体的第一基板的整个表面上并且接收公共电压,并且第二电极电连接到漏电极。