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    • 1. 发明申请
    • FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    • 平板显示装置及其制造方法
    • US20110297945A1
    • 2011-12-08
    • US13114976
    • 2011-05-24
    • Jin-Goo JungDeok-Hoi KimSeung-Gyu TaeYu-Bong WonSung-Woo Jung
    • Jin-Goo JungDeok-Hoi KimSeung-Gyu TaeYu-Bong WonSung-Woo Jung
    • H01L33/16
    • H01L28/60G02F1/136213G02F1/136286G02F2201/40H01L27/1255H01L27/1288
    • A method of manufacturing a flat panel display device includes: forming a semiconductor layer of a thin film transistor (TFT) on a substrate; forming a gate electrode on the semiconductor layer with a gate insulating layer between the gate electrode and the semiconductor layer, and doping source and drain regions of the semiconductor layer with ion impurities; sequentially forming a first conductive layer, a first insulating layer, and a second conductive layer, and forming a capacitor at a distance away from the TFT by patterning the first conductive layer, the first insulating layer, and the second conductive layer; forming a second insulating layer, and forming contact holes passing through the second insulating layer, the contact holes exposing portions of the source and drain regions and the second conductive layer; and forming source and drain electrodes that respectively contact the source and drain regions and the second conductive layer through the contact holes.
    • 一种制造平板显示装置的方法包括:在衬底上形成薄膜晶体管(TFT)的半导体层; 在栅电极和半导体层之间的栅极绝缘层在半导体层上形成栅电极,并用离子杂质掺杂半导体层的源区和漏区; 顺序地形成第一导电层,第一绝缘层和第二导电层,并且通过对第一导电层,第一绝缘层和第二导电层进行构图而形成与TFT远离一定距离的电容器; 形成第二绝缘层,以及形成通过所述第二绝缘层的接触孔,所述接触孔暴露所述源极和漏极区域和所述第二导电层的部分; 以及通过所述接触孔形成分别接触所述源极和漏极区域以及所述第二导电层的源极和漏极。
    • 2. 发明授权
    • Display device and method of manufacturing the same
    • 显示装置及其制造方法
    • US09240423B2
    • 2016-01-19
    • US13283380
    • 2011-10-27
    • Zhi Feng ZhanSeung-Gyu TaeDeok-Hoi Kim
    • Zhi Feng ZhanSeung-Gyu TaeDeok-Hoi Kim
    • H01L33/08H01L33/16H01L27/12G02F1/1362
    • H01L27/1255G02F1/136213G02F1/136227
    • A display device includes: an insulating substrate comprising a first region and a second region; a thin-film transistor (TFT) formed on the first region comprising a gate electrode, a source electrode, and a drain electrode; and a storage capacitor formed on the second region, wherein the storage capacitor comprises a first electrode, a second electrode and a first interlayer insulating film, where the first and second electrodes face each other and are made of a transparent conductive material, wherein the interlayer insulating film is interposed between the first electrode and the second electrode, and wherein the first electrode is formed on the entire surface of the first substrate as one body and receives a common voltage, and the second electrode is electrically connected to the drain electrode.
    • 显示装置包括:绝缘基板,包括第一区域和第二区域; 在包括栅电极,源电极和漏电极的第一区域上形成的薄膜晶体管(TFT); 以及形成在所述第二区域上的存储电容器,其中所述存储电容器包括第一电极,第二电极和第一层间绝缘膜,其中所述第一和第二电极彼此面对并且由透明导电材料制成,其中所述中间层 绝缘膜插入在第一电极和第二电极之间,并且其中第一电极形成在作为一体的第一基板的整个表面上并且接收公共电压,并且第二电极电连接到漏电极。
    • 6. 发明申请
    • THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    • 薄膜晶体管基板及其制造方法
    • US20080197356A1
    • 2008-08-21
    • US12021079
    • 2008-01-28
    • Deok-Hoi KIMChung Yi
    • Deok-Hoi KIMChung Yi
    • H01L27/12H01L21/84H01L21/336
    • H01L27/12H01L27/124H01L27/1248H01L29/41733
    • A thin film transistor (TFT) substrate and a method of manufacturing the same in which the surface of a data pattern is implanted with ions to increase the adhesion force with a passivation layer formed by a subsequent process. The TFT substrate includes: an active layer having a channel region formed of a semiconductor and source and drain regions doped with impurities; a data pattern formed on the active layer and including source and drain electrodes, the surface of which is implanted with ions to increase hydrophobicity and roughness; a passivation layer formed on the data pattern and including a pixel contact hole exposing a portion of the drain electrode; and a pixel electrode formed on the passivation layer and connected to the drain electrode through the pixel contact hole, and a method of manufacturing the same.
    • 一种薄膜晶体管(TFT)基板及其制造方法,其中数据图案的表面用离子注入以通过随后的工艺形成的钝化层增加附着力。 TFT基板包括:具有由半导体形成的沟道区域和掺杂有杂质的源极和漏极区域的有源层; 形成在有源层上并包括源极和漏极的数据图案,其表面上注入离子以增加疏水性和粗糙度; 钝化层,其形成在所述数据图案上并且包括暴露所述漏电极的一部分的像素接触孔; 以及形成在钝化层上并通过像素接触孔连接到漏电极的像素电极及其制造方法。
    • 7. 发明申请
    • Display pixel, display apparatus having an image pixel and method of manufacturing display device
    • 显示像素,具有图像像素的显示装置和制造显示装置的方法
    • US20060164566A1
    • 2006-07-27
    • US10538166
    • 2003-12-06
    • Pil-Mo ChoiChung YiDeok-Hoi KimKwan-Wook Jung
    • Pil-Mo ChoiChung YiDeok-Hoi KimKwan-Wook Jung
    • G02F1/136
    • G02F1/1368G02F1/136227H01L27/12H01L27/124
    • In a pixel for displays capable of simplifying manufacturing process, a display apparatus having a simplified pixel structure and a method of manufacturing a cost competitive display device, a display pixel includes a channel layer, first to third signal lines, first and second insulating layers and a pixel electrode. The first signal line is formed on the first insulating layer. The first insulating layer insulates the channel layer from the first signal line. The second insulating layer insulates the first signal line from the second and third signal lines, and includes contact holes. The second and third signal lines are connected to the channel layer through the contact holes. The pixel electrode including indium zinc oxide is formed on the identical layer with the first and second signal lines, and disposed on the second insulating layer. Therefore, manufacturing process is simplified and manufacturing time is reduced.
    • 在能够简化制造工艺的显示器的像素中,具有简化的像素结构的显示装置和制造成本竞争力的显示装置的方法,显示像素包括沟道层,第一至第三信号线,第一和第二绝缘层,以及 像素电极。 第一信号线形成在第一绝缘层上。 第一绝缘层使通道层与第一信号线绝缘。 第二绝缘层使第一信号线与第二和第三信号线绝缘,并且包括接触孔。 第二和第三信号线通过接触孔连接到沟道层。 包括氧化铟锌的像素电极形成在与第一和第二信号线相同的层上,并且设置在第二绝缘层上。 因此,制造工序简化,制造时间缩短。
    • 9. 发明申请
    • ION IMPLANTING APPARATUS AND METHOD FOR IMPLANTING IONS
    • 离子植入装置和离子注入方法
    • US20080191154A1
    • 2008-08-14
    • US11970755
    • 2008-01-08
    • Deok-Hoi KIMChung YI
    • Deok-Hoi KIMChung YI
    • G21K5/04
    • H01J37/3171H01J37/304H01J2237/244H01J2237/24507H01J2237/24535H01J2237/31703
    • In an ion implanting apparatus and a method for implanting ions are provided. The ion implanting apparatus includes an ion source part, a substrate holding part, a beam current adjusting part, a doping quantity measuring part, and an ion beam control part. The ion source part generates an ion beam. The ion beam is irradiated onto the substrate and the ions are implanted into the substrate. The beam current adjusting part is disposed between the ion source part and the substrate holding part, to adjust a beam current. The doping quantity measuring part is disposed on substantially the same surface as the substrate, to measure ion doping quantity. The ion beam control part is connected to the doping quantity measuring part, to control the ion source part and the beam current adjusting part.
    • 提供离子注入装置和用于注入离子的方法。 离子注入装置包括离子源部,基板保持部,光束电流调整部,掺杂量测量部和离子束控制部。 离子源部分产生离子束。 将离子束照射到衬底上,并将离子注入到衬底中。 光束电流调节部分设置在离子源部分和衬底保持部分之间,以调节光束电流。 掺杂量测量部件设置在与基板基本相同的表面上,以测量离子掺杂量。 离子束控制部分连接到掺杂量测量部分,以控制离子源部分和束电流调节部分。