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1. 发明授权

US07168248B2 Stirling engine 失效
标题翻译：斯特林发动机
公开(公告)号：US07168248B2
公开(公告)日：2007-01-30
申请号：US10564094
申请日：2004-07-20
申请人： Jin Sakamoto , Kazushi Yoshimura , Kenji Takai , Shinji Yamagami , Yoshiyuki Kitamura , Hiroshi Yasumura , Hirotaka Ohno
发明人： Jin Sakamoto , Kazushi Yoshimura , Kenji Takai , Shinji Yamagami , Yoshiyuki Kitamura , Hiroshi Yasumura , Hirotaka Ohno
IPC分类号： F01B29/10
CPC分类号： F25B9/14 , F02G1/0435 , F02G1/053 , F25B2309/001
摘要： A Stirling engine, wherein when a linear motor reciprocatingly move a piston in a cylinder, a displacer also reciprocatingly moves in the cylinder storing the displacer. By this, working mixture moves between a compression space and an expansion space. Though a spring for generating resonance is combined with the displacer, a spring for generating resonance for the piston is eliminated. Gas bearings are installed for the piston at two or more positions at specified intervals in the axial direction. An inside flange formed at the end of the cylinder and a stopper plate fixed to the linear motor determine the moving limit of the piston. Since a pin projected from the stopper plate is received by a through hole in a magnet holder, the piston can be prevented from being rotated.
摘要翻译：一种斯特林发动机，其中当线性马达往复运动的气缸中的活塞时，置换器也在容纳置换器的气缸中往复运动。由此，工作混合物在压缩空间和膨胀空间之间移动。虽然用于产生共振的弹簧与置换器组合，但是消除了用于产生活塞的共振的弹簧。在轴向上以规定的间隔在两个或多个位置安装气体轴承。形成在气缸端部的内凸缘和固定到线性电动机的止动板确定活塞的移动极限。由于从止动板突出的销被磁体保持器中的通孔接收，所以可以防止活塞旋转。

2. 发明申请

US20060137339A1 Stirling engine 失效
标题翻译：斯特林发动机
公开(公告)号：US20060137339A1
公开(公告)日：2006-06-29
申请号：US10564094
申请日：2004-07-20
申请人： Jin Sakamoto , Kazushi Yoshimura , Kenji Takai , Shinji Yamagami , Yoshiyuki Kitamura , Hiroshi Yasumura , Hirotaka Ohno
发明人： Jin Sakamoto , Kazushi Yoshimura , Kenji Takai , Shinji Yamagami , Yoshiyuki Kitamura , Hiroshi Yasumura , Hirotaka Ohno
IPC分类号： F02G1/04
CPC分类号： F25B9/14 , F02G1/0435 , F02G1/053 , F25B2309/001
摘要： A Stirling engine, wherein when a linear motor reciprocatingly move a piston in a cylinder, a displacer also reciprocatingly moves in the cylinder storing the displacer. By this, working mixture moves between a compression space and an expansion space. Though a spring for generating resonance is combined with the displacer, a spring for generating resonance for the piston is eliminated. Gas bearings are installed for the piston at two or more positions at specified intervals in the axial direction. An inside flange formed at the end of the cylinder and a stopper plate fixed to the linear motor determine the moving limit of the piston. Since a pin projected from the stopper plate is received by a through hole in a magnet holder, the piston can be prevented from being rotated.
摘要翻译：一种斯特林发动机，其中当线性马达往复运动的气缸中的活塞时，置换器也在容纳置换器的气缸中往复运动。由此，工作混合物在压缩空间和膨胀空间之间移动。虽然用于产生共振的弹簧与置换器组合，但是消除了用于产生活塞的共振的弹簧。在轴向上以规定的间隔在两个或多个位置安装气体轴承。形成在气缸端部的内凸缘和固定到线性电动机的止动板确定活塞的移动极限。由于从止动板突出的销被磁体保持器中的通孔接收，所以可以防止活塞旋转。

3. 发明授权

US08865584B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08865584B2
公开(公告)日：2014-10-21
申请号：US13387910
申请日：2010-05-18
申请人： Hirotaka Ohno
发明人： Hirotaka Ohno
IPC分类号： H01L21/44 , H01L23/00 , H01L21/48 , H01L23/492
CPC分类号： H01L23/492 , C23C24/04 , H01L21/4875 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L2224/04026 , H01L2224/05655 , H01L2224/26175 , H01L2224/27013 , H01L2224/29099 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/33505 , H01L2224/83007 , H01L2224/83101 , H01L2224/83193 , H01L2224/83385 , H01L2224/83411 , H01L2224/83447 , H01L2224/83455 , H01L2224/83815 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/00 , H01L2924/013 , H01L2924/00014
摘要： A semiconductor device of the present invention has a purpose to form a structure of preventing outflow of solder at low costs. A semiconductor element is bonded to a substrate through a solder layer. An outflow-preventing part is provided to surround the solder layer to prevent solder outflow during soldering. The outflow-preventing part is formed by a cold spray method and has a surface in an oxidized state.
摘要翻译：本发明的半导体器件的目的是形成以低成本防止焊料流出的结构。半导体元件通过焊料层与基板接合。提供防流出部分以围绕焊料层以防止在焊接期间焊料流出。防流出部由冷喷涂法形成，表面处于氧化状态。

4. 发明授权

US08436461B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08436461B2
公开(公告)日：2013-05-07
申请号：US13499253
申请日：2010-05-21
申请人： Hirotaka Ohno
发明人： Hirotaka Ohno
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： C23C24/04 , C23C28/00 , H01L23/051 , H01L23/3107 , H01L23/3142 , H01L23/4334 , H01L23/49517 , H01L23/49562 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/48 , H01L24/73 , H01L2224/291 , H01L2224/32245 , H01L2224/33181 , H01L2224/48091 , H01L2224/48247 , H01L2224/73215 , H01L2224/73265 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/181 , H01L2924/18301 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Disclosed is a semiconductor device wherein the adhesion of resin to a substrate is improved at a low cost. A semiconductor element and one or two substrates opposing one or both of the surfaces of the semiconductor element are sealed by a resin, a resin bonding coat which is formed by spraying a metal powder by a cold spray method is formed on one or both of the substrates, and recess portions which are widened from a film surface in a depth direction are formed on the resin bonding coat.
摘要翻译：公开了一种半导体器件，其中以低成本提高了树脂对基片的粘合性。半导体元件和与半导体元件的一个或两个表面相对的一个或两个基板被树脂密封，通过冷喷涂法喷涂金属粉末而形成的树脂粘结涂层形成在一个或两个在树脂接合涂层上形成有从深度方向从膜表面变宽的基板和凹部。

5. 发明授权

US06225239B1 Organic films and a process for producing fine pattern using the same 失效
标题翻译：有机膜和使用其制造精细图案的方法
公开(公告)号：US06225239B1
公开(公告)日：2001-05-01
申请号：US09163975
申请日：1998-09-30
申请人： Hirotaka Ohno , Kazushi Fujioka , Mikihiro Yamanaka , Satoko Mitarai , Hiroshi Tokumoto
发明人： Hirotaka Ohno , Kazushi Fujioka , Mikihiro Yamanaka , Satoko Mitarai , Hiroshi Tokumoto
IPC分类号： H01L21469
CPC分类号： B05D1/185 , B82Y30/00 , B82Y40/00 , H01L21/3128
摘要： This invention provides a process for accumulating different organic molecular films on oxidized III-V-group compound semiconductor substrates in order to produce a stable, high-quality organic monomolecular film that is three-dimensionally regularly arranged, as well as a process for producing a fine pattern of such organic films. This organic film is formed by immersing a III-V group compound semiconductor substrates in a vessel containing a solution containing phosphonic acid dissolved into a solvent in order to form a self-assembled film, and placing the substrate into a different solution to adsorb metal ions to the surface of the film, or immersing the substrate in a bromide or an acid or alkali solution to denature functional groups, then immersing it in a solution containing organic molecules that are selectively chemically adsorbed to the modified functional groups. These steps are repeated to form a stable, high-quality multilayer film that is three-dimensionally regularly arranged, while controlling film thickness with an accuracy on the scale of thickness of a molecular layer. In addition, the present invention realizes the formation of a fine composite three-dimensional organic self-assembled film of the order of nanometer, characterized in that the process comprises using a cleavage method or a very-high-vacuum vessel to form on a substrate with different types of III-V-group semiconductor materials mixed thereon by means of the heteroepitaxial process such as the MBE or MOCVD process, a self-assembled film of the molecules having thiol groups in a non-oxidized area and then forming on an oxidized surface a self-assembled film of molecules having phosphoric acid group, trichlorosilyl groups or alkoxylyl groups.
摘要翻译：本发明提供一种用于在氧化的III-V族化合物半导体衬底上积聚不同的有机分子膜的方法，以产生三维规则排列的稳定，高质量的有机单分子膜，以及制备这种有机薄膜的精细图案。该有机膜通过将III-V族化合物半导体基板浸渍在含有溶解于溶剂中的膦酸溶液的容器中形成自组装膜而形成，并将基板放置在不同的溶液中以吸附金属离子或者将基材浸入溴化物或酸或碱溶液中以使官能团变性，然后将其浸入含有选择性地化学吸附至改性官能团的有机分子的溶液中。重复这些步骤以形成三维规则排列的稳定，高质量的多层膜，同时以分子层厚度的精度控制膜厚。此外，本发明实现了精细复合三维有机自组装膜的纳米级，其特征在于该方法包括使用切割方法或非常高的真空容器在具有不同类型的III-V族半导体材料的基底上形成通过诸如MBE或MOCVD工艺的异质外延工艺在其上混合，在非氧化区域中具有硫醇基的分子的自组装膜然后在氧化表面上形成具有磷酸的分子的自组装膜基团，三氯甲硅烷基或烷氧基。

6. 发明申请

US20120126411A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120126411A1
公开(公告)日：2012-05-24
申请号：US13387910
申请日：2010-05-18
申请人： Hirotaka Ohno
发明人： Hirotaka Ohno
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H01L23/492 , C23C24/04 , H01L21/4875 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/743 , H01L24/83 , H01L2224/04026 , H01L2224/05655 , H01L2224/26175 , H01L2224/27013 , H01L2224/29099 , H01L2224/291 , H01L2224/32225 , H01L2224/32245 , H01L2224/33505 , H01L2224/83007 , H01L2224/83101 , H01L2224/83193 , H01L2224/83385 , H01L2224/83411 , H01L2224/83447 , H01L2224/83455 , H01L2224/83815 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/00 , H01L2924/013 , H01L2924/00014
摘要： A semiconductor device of the present invention has a purpose to form a structure of preventing outflow of solder at low costs. A semiconductor element is bonded to a substrate through a solder layer. An outflow-preventing part is provided to surround the solder layer to prevent solder outflow during soldering. The outflow-preventing part is formed by a cold spray method and has a surface in an oxidized state.
摘要翻译：本发明的半导体器件的目的是形成以低成本防止焊料流出的结构。半导体元件通过焊料层与基板接合。提供防流出部分以围绕焊料层以防止在焊接期间焊料流出。防流出部由冷喷涂法形成，表面处于氧化状态。

7. 发明授权

US08058554B2 Semiconductor power conversion apparatus and method of manufacturing the same 有权
标题翻译：半导体功率转换装置及其制造方法
公开(公告)号：US08058554B2
公开(公告)日：2011-11-15
申请号：US12526854
申请日：2008-02-20
申请人： Hideo Nakamura , Tomoyuki Watanabe , Hirotaka Ohno , Nobuaki Inagaki
发明人： Hideo Nakamura , Tomoyuki Watanabe , Hirotaka Ohno , Nobuaki Inagaki
IPC分类号： H02G5/00
CPC分类号： H01L25/072 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40095 , H01L2224/40137 , H01L2224/77272 , H01L2224/83801 , H01L2224/84801 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/181 , H01L2924/19041 , H01L2924/351 , H02M7/003 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： A bus bar has a lead portion and a bus bar portion which are integrally shaped. The lead portion is provided in such a shape that branches from the bus bar portion. A part of the lead portion forms a connection part directly electrically connected with a transistor electrode and a diode electrode by a connecting material such as solder. The thickness of the lead portion including the connection part is made smaller than the thickness of the bus bar portion. Accordingly, such an interconnection structure can be provided in which the electrode of the semiconductor device and the bus bar are electrically directly connected with each other and thermal stress at the connection part therebetween can be relieved.
摘要翻译：母线具有一体成形的引线部分和母线部分。引线部分设置成从母线部分分支的形状。引线部分的一部分通过诸如焊料的连接材料形成与晶体管电极和二极管电极直接电连接的连接部分。包括连接部分的引线部分的厚度被制成小于汇流条部分的厚度。因此，可以提供这样的互连结构，其中半导体器件的电极和母线彼此电连接，并且可以减轻其间的连接部处的热应力。

8. 发明授权

US5970381A Method for fabricating organic thin film 失效
标题翻译：有机薄膜的制造方法
公开(公告)号：US5970381A
公开(公告)日：1999-10-19
申请号：US924697
申请日：1997-09-05
申请人： Hirotaka Ohno , Larry A. Nagahara , Hiroshi Tokumoto
发明人： Hirotaka Ohno , Larry A. Nagahara , Hiroshi Tokumoto
IPC分类号： C30B33/00 , B05D1/18 , H01L21/20 , H01L51/05 , H01L51/40 , H01L21/265
CPC分类号： B82Y30/00 , B05D1/185 , B82Y40/00 , Y10S438/939
摘要： A method is provided that produces a good, strong organic monomolecular film having its atoms arranged in a three-dimensionally ordered manner by cleaving a III-V group compound semiconductor substrate in film formation molecules or in a solution containing them, in order to cause selective chemisorption which forms a monomolecular film and then deposits another layer of organic molecule film. In this method, the III-V group compound semiconductor substrate is cleaved in a solution containing SH groups dissolved into a solvent in order to form a self-assembled monolayer and is then placed in another solution, where metallic ions are adsorbed to the surface of the film or where the functional groups are converted by chemical treatment. The substrate is then immersed in a solution containing organic molecules that are selectively chemisorbed to the functional groups. This process is sequentially repeated to form good, strong multilayers having a three-dimensionally ordered arrangement while also controlling film thickness.
摘要翻译：提供一种方法，其通过在成膜分子中或在含有它们的溶液中裂解III-V族化合物半导体衬底，产生其原子以三维有序的方式排列的良好的强有机单分子膜，以引起选择性化学吸附形成单分子膜，然后沉积另一层有机分子膜。在该方法中，将III-V族化合物半导体衬底在含有溶解在溶剂中的SH基团的溶液中裂解，形成自组装单层，然后置于另一种溶液中，其中金属离子被吸附在该膜或通过化学处理转化官能团的位置。然后将衬底浸入含有选择性化学吸附到官能团的有机分子的溶液中。顺序地重复该过程以形成具有三维有序排列的良好，强的多层，同时还控制膜厚度。

9. 发明申请

US20140232016A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20140232016A1
公开(公告)日：2014-08-21
申请号：US14347505
申请日：2011-09-29
申请人： Hirotaka Ohno , Takuya Kadoguchi
发明人： Hirotaka Ohno , Takuya Kadoguchi
IPC分类号： H01L23/28
CPC分类号： H01L23/28 , H01L23/3107 , H01L23/4334 , H01L23/492 , H01L23/562 , H01L25/072 , H01L25/18 , H01L2224/0603 , H01L2224/3754 , H01L2224/40137 , H01L2224/48091 , H01L2224/48247 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/30107 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： This semiconductor device includes: a first metal plate; a plurality of semiconductor elements mounted on the first metal plate; a spacer that is connected to a surface on the opposite side to the surface where the plurality of semiconductor elements are mounted on the first metal plate; a second metal plate that is connected to a surface on the opposite side to the surface where the spacer is connected to the semiconductor elements; and an encapsulating resin between the first plate and the second plate that seals the plurality of semiconductor elements. Stress due to contraction that occurs in the encapsulating resin between the plurality of semiconductor elements is relaxed to a greater extent than stress due to contraction that occurs in the encapsulating resin in the locations other than the location between the plurality of semiconductor devices.
摘要翻译：该半导体装置包括：第一金属板; 安装在所述第一金属板上的多个半导体元件; 连接到与所述多个半导体元件安装在所述第一金属板上的表面相反侧的表面的间隔件; 第二金属板，其连接到与间隔件连接到半导体元件的表面相反侧的表面; 以及密封所述多个半导体元件的所述第一板和所述第二板之间的封装树脂。由于在多个半导体元件之间的位置以外的位置处发生在封装树脂中的收缩引起的由于在多个半导体元件之间的封装树脂中发生的收缩而产生的收缩的应力被更大程度地松弛。

10. 发明申请

US20120043662A1 SEMICONDUCTOR DEVICE PRODUCTION METHOD AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件生产方法和半导体器件
公开(公告)号：US20120043662A1
公开(公告)日：2012-02-23
申请号：US13238740
申请日：2011-09-21
申请人： Hirotaka Ohno
发明人： Hirotaka Ohno
IPC分类号： H01L23/48 , H01L21/56
CPC分类号： H01L24/49 , H01L23/3185 , H01L24/32 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L25/074 , H01L2224/2919 , H01L2224/32145 , H01L2224/32245 , H01L2224/33181 , H01L2224/45124 , H01L2224/48091 , H01L2224/48095 , H01L2224/48247 , H01L2224/48472 , H01L2224/49171 , H01L2224/73215 , H01L2224/73265 , H01L2224/838 , H01L2224/8592 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/0665 , H01L2924/13055 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A purpose of the application is to provide a semiconductor device production method capable of reducing complexity of production operations and keeping production costs low, and enhancing reliability, and a semiconductor device. One aspect of the invention provides a method of producing a semiconductor device, the method including a first bonding step of bonding a first electrode plate and a semiconductor device portion, and a second bonding step of bonding the semiconductor device portion and a second electrode plate. The method includes a sealing step of forming a sealed composite body by covering target surfaces of a composite body formed by the first bonding step with resin, the target surfaces being surfaces other than a second surface of the first electrode plate and the second surface of the semiconductor device portion. The second bonding step is performed after the sealing step.
摘要翻译：本申请的目的在于提供能够降低生产作业的复杂性，保持生产成本低，提高可靠性的半导体装置的制造方法以及半导体装置。本发明的一个方面提供一种制造半导体器件的方法，该方法包括：接合第一电极板和半导体器件部分的第一接合步骤;以及接合半导体器件部分和第二电极板的第二接合步骤。该方法包括密封步骤，通过将由第一接合步骤形成的复合体的目标表面覆盖树脂形成密封复合体，目标表面是除了第一电极板的第二表面和第二表面之外的表面半导体器件部分。第二接合步骤在密封步骤之后进行。

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