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    • 8. 发明申请
    • Information system for metabolic flux analysis using extensible markup language and operating method thereof
    • 使用可扩展标记语言进行代谢通量分析的信息系统及其操作方法
    • US20060224371A1
    • 2006-10-05
    • US11148907
    • 2005-06-09
    • Sang LeeHong YunDong LeeSeung LeeJoon JeongTae Kim
    • Sang LeeHong YunDong LeeSeung LeeJoon JeongTae Kim
    • G06G7/48G06G7/58
    • G06F19/26G06F19/12
    • The present invention relates to an MFA (Metabolic Flux Analysis) information system using an XML (eXtensible Markup Language) and an operating method thereof. More specifically, the invention relates to an MFA information system and an operating method thereof, which generates, edits, stores and visualizes an MFA model feature and an MFA object using XML, and edits, stores and visualizes the result obtained by performing MFA based on the object. The present invention provides the MFA information system and method capable of generating, editing, storing and visualizing MFA model features and MFA objects using XML. Accordingly, MFA can be easily performed by utilizing advantages of XML, such as transplantation, reusability, deciphering, scalability, flexibility and effective data exchange, and thus the present invention can be applied to cell improvement using metabolic engineering.
    • 本发明涉及使用XML(可扩展标记语言)的MFA(代谢通量分析)信息系统及其操作方法。 更具体地,本发明涉及一种MFA信息系统及其操作方法,其使用XML生成,编辑,存储和可视化MFA模型特征和MFA对象,并且通过执行MFA获得的结果进行编辑,存储和可视化 物体。 本发明提供了能够使用XML来生成,编辑,存储和可视化MFA模型特征和MFA对象的MFA信息系统和方法。 因此,通过利用移植,可重用性,解密,可扩展性,灵活性和有效的数据交换等XML的优点,可以容易地实现MFA,因此本发明可以应用于使用代谢工程的细胞改良。
    • 10. 发明申请
    • Method of fabricating flash memory device
    • 制造闪存设备的方法
    • US20060223264A1
    • 2006-10-05
    • US11297147
    • 2005-12-07
    • Jeong ParkTae KimDong Lee
    • Jeong ParkTae KimDong Lee
    • H01L21/336
    • H01L27/11526H01L27/105H01L27/11546
    • A method of fabricating a flash memory device includes defining a high voltage region and a low voltage region on a substrate. The high voltage region provides an area for one or more first transistors configured to operation at a first voltage, the low voltage region providing an area for one or more second transistors configured to operation at a second voltage that is lower than the first voltage, each first transistor having a gate and a source/drain region on each side of the gate. A first impurity region is formed as part of the source/drain region, the first impurity region having a first depth from an upper surface of the substrate, the first impurity region being of first conductivity having a first impurity concentration. A second impurity is formed as part of the source/drain region, the second impurity region having a second depth from the upper surface of the substrate that is less than first depth, the second impurity region being of the first conductivity and having a second impurity concentration that is greater than the first impurity concentration. Impurities of second conductivity are implanted into the source/drain region.
    • 制造闪速存储器件的方法包括在衬底上限定高电压区域和低电压区域。 所述高电压区域为配置成在第一电压下操作的一个或多个第一晶体管提供一个区域,所述低电压区域提供一个或多个第二晶体管的区域,所述第二晶体管被配置为在低于所述第一电压的第二电压下工作, 第一晶体管在栅极的每一侧具有栅极和源极/漏极区域。 第一杂质区域形成为源极/漏极区域的一部分,第一杂质区域具有从衬底的上表面的第一深度,第一杂质区域具有第一杂质浓度的第一导电性。 第二杂质形成为源极/漏极区的一部分,第二杂质区具有比衬底的上表面小于第一深度的第二深度,第二杂质区具有第一导电性且具有第二杂质 浓度大于第一杂质浓度。 将第二导电性杂质注入源/漏区。