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    • 1. 发明授权
    • System for power facility navigation
    • 电力设施导航系统
    • US08473203B2
    • 2013-06-25
    • US12341768
    • 2008-12-22
    • Jin Ho ShinYoung Il KimBong Jae LeeJae Ju Song
    • Jin Ho ShinYoung Il KimBong Jae LeeJae Ju Song
    • G01C21/30G06Q50/06
    • G01C21/3605G01C21/30G06Q10/047
    • A system for power facility navigation is disclosed. For rapid dispatch in the field service including power failure recovery and maintenance, the destination location can be set using various items such as pole numbers, computerization codes, customer names, trade names, equipment numbers and GIS coordinates. Destination location setting and path finding can be performed in order of priorities assigned to these items and in consideration of characteristics of field service activities. Location coordinates are received through a GPS receiver, coordinate conversion is performed according to a facility GIS coordinate system, and map matching is processed when GPS coordinates do not match facility GIS coordinates. The road network database is composed of linear array structures and the structure of a link is configured to include information regarding all other links connected to the start node and end node in a manner that link information and node attributes are integrated together.
    • 公开了电力设施导航系统。 为了快速派遣现场服务,包括停电恢复和维护,可以使用诸如极数,计算机代码,客户名称,商品名称,设备编号和GIS坐标等各种项目设置目的地位置。 可以按照分配给这些项目的优先次序并考虑现场服务活动的特点来执行目的地位置设置和路径查找。 通过GPS接收机接收位置坐标,根据设备GIS坐标系进行坐标转换,GPS坐标与设备GIS坐标不匹配时处理地图匹配。 道路网络数据库由线性阵列结构组成,并且链路的结构被配置为以链接信息和节点属性集成在一起的方式包括关于连接到起始节点和结束节点的所有其他链路的信息。
    • 2. 发明授权
    • Remote meter reading system using grouped data structure
    • 远程抄表系统采用分组数据结构
    • US07053790B2
    • 2006-05-30
    • US10627071
    • 2003-07-24
    • Moon Jong JangSeon Ku ChoBong Jae LeeJin Ho ShinJae Hee LeeEui Yeul KimKeon Hang Lee
    • Moon Jong JangSeon Ku ChoBong Jae LeeJin Ho ShinJae Hee LeeEui Yeul KimKeon Hang Lee
    • G08B23/00
    • H04Q9/00H04Q2209/10H04Q2209/30H04Q2209/40
    • The present invention relates to a remote meter reading system using a grouped data structure. The central processing unit of the electronic electric power meter collects the data having similar function and groups the same. Each group is classified into main items, and each main item is classified into sub-items and is stored in the memory apparatus, and when a data transmission request signal of the wired and wireless meter reading terminal and the remote meter reading server is inputted in accordance with a data address system corresponding to a grouped data stored in the memory apparatus, a collecting data corresponding to the data address system that the data transmission request signal represents is selected, and is transmitted to the wired and wireless meter reading terminal and the remote meter reading server, respectively. Therefore, when the meter reader collects a data of the electronic electric power meter at the current place, it is possible to decrease the meter reading time by collecting only the data needed. The work time is decreased. Since only the data needed for the work is stored, it is possible to save the space of the memory apparatus. Only the data needed is received, and the work is performed, an expensive equipment is not needed.
    • 本发明涉及使用分组数据结构的远程抄表系统。 电子功率计的中央处理单元收集具有相似功能的数据,组合相同。 每个组分为主要项目,每个主要项目分为子项目并存储在存储装置中,并且当有线和无线抄表终端和远程抄表服务器的数据发送请求信号被输入时 根据与存储在存储装置中的分组数据相对应的数据地址系统,选择对应于数据传输请求信号所代表的数据地址系统的采集数据,并将其发送到有线和无线抄表终端和遥控器 抄表服务器。 因此,当仪表读取器在当前位置收集电子电表的数据时,可以通过仅收集所需的数据来减少抄表时间。 工作时间减少。 由于仅存储工作所需的数据,所以可以节省存储装置的空间。 只接收所需的数据,执行工作,不需要昂贵的设备。
    • 6. 发明授权
    • Apparatus for testing tensile strength under high temperature condition and unit for measuring elongation provided in the same
    • 用于在高温条件下测试拉伸强度的装置和用于测量在其中提供的伸长率的单元
    • US08528416B2
    • 2013-09-10
    • US12947173
    • 2010-11-16
    • Bong Jae LeeYong Ho YooHeung Youl KimHyung Jun KimKyung Hoon Park
    • Bong Jae LeeYong Ho YooHeung Youl KimHyung Jun KimKyung Hoon Park
    • G01N3/08
    • G01N3/18G01N3/60G01N2203/0017
    • Provided are an apparatus for testing a tensile strength under a high temperature condition and a unit for measuring elongation provided in the same. The apparatus for testing a tensile strength under a high temperature condition includes a base frame part, a test sample loader and a cylinder part connected to the base frame part and applying a tensile force to a test sample, and a heater for forming a high temperature condition to the test sample. The unit for measuring elongation includes a movable frame, a vertical bar, and a measurement head part connected to the vertical bar to measure elongation of the test sample and blocking heat from the heater. Therefore, since a tensile strength and elongation of the test sample can be measured under a high temperature condition, it is possible to recognize deformation characteristics of a material due to a fire and prevent deformation of or damage to the elongation measurement unit even under the high temperature condition, improving durability and reliability of the apparatus.
    • 提供了一种用于在高温条件下测试拉伸强度的装置和用于测量在其中提供的伸长率的单元。 用于在高温条件下测试拉伸强度的装置包括底架部件,试样装载器和连接到基架部件的圆筒部件并向试样施加张力,以及用于形成高温的加热器 测试样品的条件。 用于测量伸长率的单元包括可移动框架,垂直杆和连接到垂直杆的测量头部分,以测量测试样品的伸长率并阻止来自加热器的热量。 因此,由于可以在高温条件下测定试样的拉伸强度和伸长率,所以能够识别由于火灾引起的材料的变形特性,即使在高温下也能够防止伸长率测定单元的变形或损坏 温度条件,提高设备的耐久性和可靠性。
    • 8. 发明申请
    • Method and resulting structure for fabricating dram cell structure using oxide line spacer
    • US20050142740A1
    • 2005-06-30
    • US10773799
    • 2004-02-06
    • Mieno FumitakeBong Jae LeeGuoqing Chen
    • Mieno FumitakeBong Jae LeeGuoqing Chen
    • H01L21/316H01L21/336H01L21/44H01L21/60H01L21/768H01L21/8242
    • H01L21/76897H01L27/10855H01L27/10888H01L27/10894
    • A method for forming bit line and storage node contacts for a dynamic random access device, e.g., DRAM. Other devices (e.g., Flash, EEPROM) may also be included. The method includes providing a substrate, which has a bit line region and a capacitor contact region. The method also includes forming at least a first gate structure and a second gate structure overlying the substrate. The first gate structure and the second gate structure include an overlying cap. The method also includes forming a conformal dielectric layer overlying the first gate structure, the second gate structure, the bit line region, and the capacitor contact region. The method includes forming an interlayer dielectric material overlying the conformal dielectric layer and planarizing the interlayer dielectric material. The method includes forming a masking layer overlying the planarized interlayer dielectric material and exposing a continuous common region within a portion of the planarized interlayer dielectric material overlying a portion of the first gate structure, a portion of the second gate structure, a portion of the bit line region, and a portion of the capacitor contact region. A first etching process is performed to remove the exposed portion of the planarized interlayer dielectric layer. A second etching process is performed to remove a portion of the conformal dielectric layer on the bit line region and to remove a portion of the conformal dielectric layer on the capacitor contact region while using other portions of the conformal layer as a mask to prevent a portion of the first gate structure and a portion of the second gate structure from being exposed. The method deposits a polysilicon fill material within the continuous common region and overlying the bit line region, the capacitor contact region, the first gate structure, and the second gate structure to cover portions of the bit line region, the capacitor contact region, the first gate structure, and the second gate structure to a predetermined thickness. The method includes planarizing the polysilicon fill material to reduce the predetermined thickness and to simultaneously reduce a thickness of a portion of the interlayer dielectric material
    • 9. 发明授权
    • Computer for executing I/O instructions, by emulation, in a foreign
application program wherein the emulator result thread is blocked from
running between processes
    • 用于通过仿真在外部应用程序中执行I / O指令的计算机,其中模拟器结果线程被阻止在进程之间运行
    • US6128679A
    • 2000-10-03
    • US31138
    • 1998-02-26
    • Andrew Ward BealeBong Jae LeeDwayne Eugene Ebersole
    • Andrew Ward BealeBong Jae LeeDwayne Eugene Ebersole
    • G06F9/455G06F13/10
    • G06F9/45537
    • A computer for executing I/O instructions, by emulation, in a foreign application program includes an emulator program which has a Send thread, a Get thread, and single Result thread. The Send thread calls into a native operating system for the computer to send data from the foreign application program to an I/O port. The Get thread calls into the native operating system to receive data from the I/O port for the foreign application program. The Result thread processes one result descriptor from the native operating system when data is sent for the Send thread, and processes another result descriptor from the native operating system when data is received for the Get thread, and is completely blocked from running on the computer between the processing of the result descriptors. These threads are cleared, asynchronously with respect to the transfer of any data, by sending a CLEAR command from the emulator to the native operating system which responds by unblocking the Result thread and sending it a dummy result descriptor.
    • 通过仿真在外部应用程序中执行I / O指令的计算机包括具有发送线程,获取线程和单个结果线程的仿真器程序。 发送线程调用本机操作系统,使计算机将数据从外部应用程序发送到I / O端口。 Get线程调用到本机操作系统,以从外部应用程序的I / O端口接收数据。 当为发送线程发送数据时,结果线程处理来自本地操作系统的一个结果描述符,并且在为Get线程接收到数据时,从本地操作系统处理另一个结果描述符,并且被完全阻止在计算机上运行 处理结果描述符。 通过将CLEAR命令从仿真器发送到本机操作系统,通过解除阻塞Result线程并发送一个虚拟结果描述符来响应,这些线程就相对于任何数据的传输异步清除。
    • 10. 发明授权
    • Method of manufacturing inverse t-shaped transistor
    • 制造逆T型晶体管的方法
    • US5654218A
    • 1997-08-05
    • US507049
    • 1995-07-25
    • Bong Jae Lee
    • Bong Jae Lee
    • H01L21/336H01L29/423H01L29/78H01L21/265
    • H01L29/66583H01L29/42376H01L29/7836
    • A method of manufacturing an inverse-T shaped transistor is disclosed including the steps of sequentially forming a first insulating film and a second insulating film on a semiconductor substrate of a first conductivity type, sequentially removing a portion of the second insulating film and a portion of the first insulating film, to thereby form an inverse-T shaped void region therein, filling the inverse-T shaped void region with a conductor to form a gate electrode having a central body portion and wings, removing the remaining first and second insulating films, and implanting impurity ions of a second conductivity type, to thereby form low concentration impurity regions in substrate areas below both wings of the gate electrode and, simultaneously, to form high concentration impurity regions in substrate areas not covered by the gate electrode.
    • 公开了一种制造逆T形晶体管的方法,包括以下步骤:在第一导电类型的半导体衬底上依次形成第一绝缘膜和第二绝缘膜,依次去除第二绝缘膜的一部分和 第一绝缘膜,从而在其中形成反T形空隙区域,用导体填充反T形空隙区域以形成具有中心体部分和翼部的栅电极,去除剩余的第一和第二绝缘膜, 并且注入第二导电类型的杂质离子,从而在栅电极的两个翼下方的衬底区域中形成低浓度杂质区,并且同时在未被栅电极覆盖的衬底区域中形成高浓度杂质区。