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    • 5. 发明授权
    • Methods for fabricating FinFET integrated circuits in bulk semiconductor substrates
    • 在半导体衬底中制造FinFET集成电路的方法
    • US08461008B2
    • 2013-06-11
    • US13210086
    • 2011-08-15
    • Jin Cho
    • Jin Cho
    • H01L21/336
    • H01L21/823431H01L21/76224H01L29/66545
    • Methods are provided for fabricating FinFETs that avoid thickness uniformity problems across a die or a substrate. One method includes providing a semiconductor substrate divided into a plurality of chips, each chip bounded by scribe lines. The substrate is etched to form a plurality of fins, each of the fins extending uniformly across the width of the chips. An oxide is deposited to fill between the fins and is etched to recess the top of the oxide below the top of the fins. An isolation hard mask is deposited and patterned overlying the plurality of fins and is used as an etch mask to etch trenches in the substrate defining a plurality of active areas, each of the plurality of active areas including at least a portion of at least one of the fins. The trenches are filled with an insulating material to isolate between adjacent active areas.
    • 提供了用于制造FinFET的方法,其避免了晶片或衬底上的厚度均匀性问题。 一种方法包括提供划分成多个芯片的半导体衬底,每个芯片由划线限定。 蚀刻基板以形成多个翅片,每个翅片均匀地延伸穿过芯片的宽度。 沉积氧化物以填充在翅片之间并且被蚀刻以使在该翅片顶部下方的氧化物的顶部凹陷。 隔离硬掩模被沉积并且图案覆盖在多个翅片上,并且被用作蚀刻掩模以蚀刻限定多个有效区域的衬底中的沟槽,所述多个有效区域中的每一个包括至少一部分至少一个 翅片 沟槽填充绝缘材料以隔离相邻的活性区域。