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1. 发明授权

US5728621A Method for shallow trench isolation 失效
标题翻译：浅沟槽隔离方法
公开(公告)号：US5728621A
公开(公告)日：1998-03-17
申请号：US845870
申请日：1997-04-28
申请人： Jia Zhen Zheng , Charlie Wee Song Tay , Wei Lu , Lap Chan
发明人： Jia Zhen Zheng , Charlie Wee Song Tay , Wei Lu , Lap Chan
IPC分类号： H01L21/762 , H01L21/76
CPC分类号： H01L21/76224
摘要： A new method for forming planarized high quality oxide shallow trench isolation is described. A nitride layer overlying a pad oxide layer is provided over the surface of a semiconductor substrate. A plurality of isolation trenches is etched through the nitride and pad oxide layers into the semiconductor substrate wherein there is at least one first wide nitride region between two of the isolation trenches and at least one second narrow nitride region between another two of the isolation trenches. A high density plasma (HDP) oxide layer is deposited over the nitride layer filling the isolation trenches wherein the HDP oxide deposits more thickly in the first region over the wide nitride layer and deposits more thinly in the second region over the narrow nitride layer and wherein the difference in step heights of the HDP oxide between the first region and a region overlying an isolation trench is a first height. A layer of spin-on-glass is coated over the HDP oxide layer wherein the difference in step heights of the spin-on-glass material between the first region and the region overlying an isolation trench is a second height smaller than the first height. The spin-on-glass layer and portions of the HDP oxide layer in the first region are etched away. The spin-on-glass layer and HDP oxide layer remaining are polished away wherein the substrate is planarized.
摘要翻译：描述了形成平面化高质量氧化物浅沟槽隔离的新方法。覆盖衬垫氧化物层的氮化物层设置在半导体衬底的表面上。通过氮化物和衬垫氧化物层蚀刻多个隔离沟槽到半导体衬底中，其中在两个隔离沟槽之间存在至少一个第一宽氮化物区域和在另外两个隔离沟槽之间的至少一个第二窄氮化物区域。在填充隔离沟槽的氮化物层上沉积高密度等离子体（HDP）氧化物层，其中HDP氧化物在宽氮化物层上的第一区域中更厚地沉积，并且在第二区域上更薄地沉积在窄氮化物层上，并且其中在第一区域和覆盖隔离沟槽的区域之间的HDP氧化物的阶跃高度的差异是第一高度。在HDP氧化物层上涂覆一层旋涂玻璃，其中在第一区域和覆盖隔离沟槽的区域之间的旋涂玻璃材料的阶梯高度的差异是比第一高度小的第二高度。旋转玻璃层和第一区域中的HDP氧化物层的部分被蚀刻掉。抛光剩余的旋涂玻璃层和HDP氧化物层，其中衬底被平坦化。

2. 发明授权

US6127238A Plasma enhanced chemical vapor deposited (PECVD) silicon nitride barrier layer for high density plasma chemical vapor deposited (HDP-CVD) dielectric layer 有权
标题翻译：用于高密度等离子体化学气相沉积（HDP-CVD）介电层的等离子体增强化学气相沉积（PECVD）氮化硅阻挡层
公开(公告)号：US6127238A
公开(公告)日：2000-10-03
申请号：US266373
申请日：1999-03-11
申请人： Marvin De-Dui Liao , Kho Liep Chok , Jia Zhen Zheng , Wei Lu , Yih-Shung Lin
发明人： Marvin De-Dui Liao , Kho Liep Chok , Jia Zhen Zheng , Wei Lu , Yih-Shung Lin
IPC分类号： H01L21/314 , H01L21/318 , H01L21/768 , H01L21/20
CPC分类号： H01L21/3185 , H01L21/76801 , H01L21/76834 , H01L21/76837
摘要： A method for forming a dielectric layer within a microelectronics fabrication. There is first provided a substrate. There is then formed over the substrate a polysilicon resistor. There is then formed over the polysilicon resistor a first dielectric layer formed of a silicon nitride dielectric material deposited employing a plasma enhanced chemical vapor deposition (PECVD) method other than a high density plasma chemical vapor deposition (HDP-CVD) method. Finally, there is then formed over the first dielectric layer a second dielectric layer deposited employing a high density plasma chemical vapor deposition (HDP-CVD) method, where first dielectric layer attenuates a decrease in resistance of the polysilicon resistor incident to forming the second dielectric layer over the first dielectric layer.
摘要翻译：一种在微电子制造中形成电介质层的方法。首先提供基板。然后在衬底上形成多晶硅电阻器。然后在多晶硅电阻器上形成由使用除了高密度等离子体化学气相沉积（HDP-CVD）方法之外的等离子体增强化学气相沉积（PECVD）方法沉积的氮化硅介电材料形成的第一介电层。最后，在第一电介质层上形成使用高密度等离子体化学气相沉积（HDP-CVD）方法沉积的第二介电层，其中第一介电层衰减入射到形成第二电介质的多晶硅电阻器的电阻降低层在第一介电层上。

3. 发明授权

US11959164B2 High damage threshold and highly reliable broad-band mid-IR coatings for high power fluoride fiber laser 有权
公开(公告)号：US11959164B2
公开(公告)日：2024-04-16
申请号：US17691537
申请日：2022-03-10
申请人： Yimin Hu , Feng Niu , Wei Lu
发明人： Yimin Hu , Feng Niu , Wei Lu
IPC分类号： C23C14/30 , C23C14/08 , C23C28/00
CPC分类号： C23C14/30 , C23C14/081 , C23C14/083 , C23C28/3455
摘要： This invention provides a process or fabrication method of forming broadband anti-reflective (AR) coating over the mid-IR fluoride fiber for high power laser applications in mid-IR wavelength range. The AR coating consists of multiple-pair Lithium fluoride (LiF) and Al2O3, and was deposited by electron beam physical vapor deposition with an iron assistant source at low temperature (

4. 发明授权

US11488650B2 Memory processing unit architecture 有权
公开(公告)号：US11488650B2
公开(公告)日：2022-11-01
申请号：US16841544
申请日：2020-04-06
申请人： Mohammed A. Zidan , Jacob Christopher Botimer , Chester Liu , Fan-hsuan Meng , Timothy Alan Wesley , Zhengya Zhang , Wei Lu
发明人： Mohammed A. Zidan , Jacob Christopher Botimer , Chester Liu , Fan-hsuan Meng , Timothy Alan Wesley , Zhengya Zhang , Wei Lu
IPC分类号： G11C11/406 , G06N5/04 , G06N3/08 , G11C11/407
摘要： A memory processing unit architecture can include a plurality of memory regions and a plurality of processing regions interleaved between the plurality of memory regions. The plurality of processing regions can be configured to perform computation functions of a model such as an artificial neural network. Data can be transferred between the computation functions in respective memory processing regions. In addition, the memory regions can be utilized to transfer data between a computation function in one processing region and a computation function in another processing region adjacent to the given memory region.

5. 发明授权

US10200909B2 Open wireless architecture (OWA) mobile cloud infrastructure and method 有权
公开(公告)号：US10200909B2
公开(公告)日：2019-02-05
申请号：US15253356
申请日：2016-08-31
申请人： Michael Lu , Wei Lu
发明人： Michael Lu , Wei Lu
IPC分类号： H04W28/02 , H04L12/46 , H04W52/02 , H04W4/60 , H04W36/14 , H04W88/16 , H04W84/12 , H04L29/08 , H04W12/08 , H04W28/06
摘要： An advanced mobile terminal converges multiple wireless transmission technologies through utilizing a cost-effective and spectrum-efficient mobile cloud solution by introducing Virtual Mobile Server (VMS), Virtual Register and Call Switch (VR/CS) and OWA Community systems and methods based on the innovative open wireless architecture (OWA) technology platform, and the mobile terminal is able to seamlessly roam in the local community without relying on traditional cellular mobile networks for the integrated smart home, smart office and smart community platform of the smart community mobility solutions among home, neighbors and local communities.

6. 发明授权

US10134985B2 Non-volatile solid state resistive switching devices 有权
公开(公告)号：US10134985B2
公开(公告)日：2018-11-20
申请号：US11875541
申请日：2007-10-19
申请人： Wei Lu , Sung Hyun Jo
发明人： Wei Lu , Sung Hyun Jo
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
摘要： Non-crystalline silicon non-volatile resistive switching devices include a metal electrode, a non-crystalline silicon layer and a planar doped silicon electrode. An electrical signal applied to the metal electrode drives metal ions from the metal electrode into the non-crystalline silicon layer to form a conducting filament from the metal electrode to the planar doped silicon electrode to alter a resistance of the non-crystalline silicon layer. Another electrical signal applied to the metal electrode removes at least some of the metal ions forming the conducting filament from the non-crystalline silicon layer to further alter the resistance of the non-crystalline silicon layer.

7. 发明授权

US09813909B2 Cloud server for authenticating the identity of a handset user 有权
公开(公告)号：US09813909B2
公开(公告)日：2017-11-07
申请号：US15355268
申请日：2016-11-18
申请人： Minsheng Wang , Wei Lu , Dongxuan Gao , Xiaojun Liu
发明人： Minsheng Wang , Wei Lu , Dongxuan Gao , Xiaojun Liu
IPC分类号： G06K9/00 , H04W12/06 , G06F21/32 , H04L29/06 , G06F21/40 , G06F21/44 , G06K9/22 , G06K9/62 , H04L29/08
CPC分类号： H04W12/06 , G06F21/32 , G06F21/40 , G06F21/44 , G06K9/00221 , G06K9/00228 , G06K9/00281 , G06K9/00288 , G06K9/00979 , G06K9/22 , G06K9/6201 , G06K9/6215 , H04L63/083 , H04L63/0861 , H04L63/10 , H04L67/10 , H04L67/42 , H04L2463/082
摘要： A method for authenticating the identity of a handset user in a cloud-computing environment is provided. The method includes: obtaining, a login account and a password from the user; judging whether the login account and the password are correct; if the login account or the password is incorrect, refusing the user to access an operating system of the handset; if the login account and the password are correct, sending the login account and the password to a cloud server, wherein the login account and the password correspond to a face sample image library of the user stored on the cloud server; acquiring an input face image of the user; sending the input face image to the cloud server; authenticating, by the cloud server, the identity of the user according to the login account, the password and the input face image.

8. 发明授权

US09493355B2 Solvent-based methods for production of graphene nanoribbons 有权
标题翻译：用于生产石墨烯纳米带的基于溶剂的方法
公开(公告)号：US09493355B2
公开(公告)日：2016-11-15
申请号：US14345016
申请日：2012-09-14
申请人： James M. Tour , Wei Lu , Bostjan Genorio
发明人： James M. Tour , Wei Lu , Bostjan Genorio
IPC分类号： C01B31/02 , C07C29/32 , C08F112/08 , C01B31/04
CPC分类号： C08F112/08 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B32/178 , C01B32/18 , C01B32/184 , C01B32/194 , C01B2202/06 , C01B2204/06 , C07C2/76 , C07C15/56 , C07C29/32 , C07C67/035 , C07C69/76 , D01F9/12 , Y10S977/734 , Y10S977/846 , Y10S977/961
摘要： The present invention provides methods of preparing functionalized graphene nanoribbons. Such methods include: (1) exposing a plurality of carbon nanotubes (CNTs) to an alkali metal source in the presence of an aprotic solvent to open them; and (2) exposing the opened CNTs to an electrophile to form functionalized graphene nanoribbons (GNRs). The methods may also include a step of exposing the opened CNTs to a protic solvent to quench any reactive species on them. Additional methods include preparing unfunctionalized GNRs by: (1) exposing a plurality of CNTs to an alkali metal source in the presence of an aprotic solvent to open them; and (2) exposing the opened CNTs to a protic solvent to form unfunctionalized GNRs.
摘要翻译：本发明提供了制备官能化石墨烯纳米带的方法。这些方法包括：（1）在非质子溶剂的存在下将多个碳纳米管（CNT）暴露于碱金属源以将其打开; 和（2）将开放的CNT暴露于亲电子试剂以形成官能化的石墨烯纳米带（GNR）。所述方法还可以包括将开放的CNT暴露于质子溶剂以淬灭其上的任何反应性物质的步骤。另外的方法包括：通过以下步骤制备未官能化的GNR：（1）在非质子溶剂存在下将多个CNT暴露于碱金属源以打开它们; 和（2）将开放的CNT暴露于质子溶剂以形成未官能化的GNR。

9. 发明申请

US20150324979A1 METHODS AND APPARATUS FOR INDIVIDUALLY OPTIMIZING UNIFORM CONTRAST ENHANCEMENTS IN COMPUTED TOMOGRAPHY IMAGING 有权
标题翻译：在计算机图像成像中单独优化均匀对比增强的方法和装置
公开(公告)号：US20150324979A1
公开(公告)日：2015-11-12
申请号：US14710052
申请日：2015-05-12
申请人： Ming Xue , Wei Lu , Seth Kligerman , Hao Zhang , Warren D'Souza , Wookjin Choi
发明人： Ming Xue , Wei Lu , Seth Kligerman , Hao Zhang , Warren D'Souza , Wookjin Choi
IPC分类号： G06T7/00 , G06T11/00
CPC分类号： A61B6/545 , A61B6/032 , A61B6/481 , A61B6/486 , A61B6/504 , G06T7/0012 , G06T11/006 , G06T2207/10081 , G06T2207/20104 , G06T2207/30101 , G06T2211/404
摘要： A method is provided for optimizing a contrast injection function for CT imaging. The method includes injecting, with an injector pump, a test bolus of a contrast agent into a subject. The method also includes computing, on a processor, an impulse enhancement function. The method also includes determining, on a processor, a target enhancement function for a region of interest. The method also includes determining, with a processor, a plurality of parameters for a functional form for a contrast injection function in a time domain. The method also includes determining for the contrast injection function a constraint. The method also includes determining, with a processor, particular values for the plurality of parameters, which satisfy the constraint and minimize a difference between a value of an enhancement function and the target enhancement function computed in the time domain at discrete time periods without use of a Fourier transform.
摘要翻译：提供了一种用于优化CT成像的造影剂注射功能的方法。该方法包括用注射器泵将造影剂的测试团注入受试者。该方法还包括在处理器上计算脉冲增强功能。该方法还包括在处理器上确定感兴趣区域的目标增强功能。该方法还包括使用处理器确定用于时域中的对比度注入功能的功能形式的多个参数。该方法还包括确定对比度注入功能的约束。该方法还包括使用处理器确定满足约束的多个参数的特定值，并且使离散时间段内在增强函数的值和在时域中计算的目标增强函数之间的差最小化，而不使用傅立叶变换。

10. 发明授权

US08793307B2 Content associative caching method for web applications 有权
标题翻译： Web应用程序的内容关联缓存方法
公开(公告)号：US08793307B2
公开(公告)日：2014-07-29
申请号：US12695996
申请日：2010-01-28
申请人： Wei Lu , Jamshid Mahdavi , Darrell Long
发明人： Wei Lu , Jamshid Mahdavi , Darrell Long
IPC分类号： G06F15/16
CPC分类号： H04L67/2842
摘要： A cache logically disposed in a communication path between a client and a server receives a request for a content item and, in response thereto, requests from the server header information concerning the content item and an initial portion of data that makes up the content item. The cache then computes a first hashing value from the header information and a second hashing value from the initial portion of data. A content identifier is created by combining the first hashing value and the second hashing value. Using the content identifier, the cache determines whether a copy of the content item is stored by the cache; and, if so provides same to the client. Otherwise, the cache requests the content item from the server and, upon receipt thereof, provides it to the client.
摘要翻译：逻辑上设置在客户端和服务器之间的通信路径中的高速缓存器接收对内容项目的请求，并响应于此，来自服务器的关于内容项目的信息的请求以及组成内容项的数据的初始部分。然后，高速缓存从头信息计算第一散列值，并从数据的初始部分计算第二哈希值。通过组合第一哈希值和第二散列值来创建内容标识符。使用内容标识符，缓存确定高速缓存是否存储内容项的副本; 如果是这样，给客户端一样。否则，高速缓存从服务器请求内容项，并在接收到该内容时将其提供给客户端。

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