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1. 发明授权

US06797109B2 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates 失效
标题翻译：用于制造半导体器件的处理室，能够减少微粒污染
公开(公告)号：US06797109B2
公开(公告)日：2004-09-28
申请号：US10235976
申请日：2002-09-06
申请人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
发明人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
IPC分类号： H05H100
CPC分类号： H01J37/32431 , C23C16/4583 , C23C16/4585 , C23C16/54 , H01J37/32623 , H01J37/32642 , H01L21/32136 , H01L21/6831 , H01L21/68735 , Y10T117/10
摘要： A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
摘要翻译：用于制造用于蚀刻半导体晶片上的材料层的半导体器件的处理室包括用于保持半导体晶片的静电卡盘和围绕静电卡盘上的半导体晶片侧的环形边缘环，以防止半导体晶片从其原始位置脱离。环形边缘环具有面向半导体晶片的侧面并与半导体晶片的侧面牢固接触的第一侧。

2. 发明授权

US06464794B1 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates 失效
标题翻译：用于制造半导体器件的处理室，能够减少微粒污染
公开(公告)号：US06464794B1
公开(公告)日：2002-10-15
申请号：US09404631
申请日：1999-09-23
申请人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
发明人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
IPC分类号： C23C1600
CPC分类号： H01J37/32431 , C23C16/4583 , C23C16/4585 , C23C16/54 , H01J37/32623 , H01J37/32642 , H01L21/32136 , H01L21/6831 , H01L21/68735 , Y10T117/10
摘要： A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.
摘要翻译：用于制造用于蚀刻半导体晶片上的材料层的半导体器件的处理室包括用于保持半导体晶片的静电卡盘和围绕静电卡盘上的半导体晶片侧的环形边缘环，以防止半导体晶片从其原始位置脱离。环形边缘环具有面向半导体晶片的侧面并与半导体晶片的侧面牢固接触的第一侧。

3. 发明申请

US20060278341A1 Process chamber used in manufacture of semiconductor device, capable of reducing contamination by particulates 审中-公开
公开(公告)号：US20060278341A1
公开(公告)日：2006-12-14
申请号：US11506833
申请日：2006-08-21
申请人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
发明人： Jeong-hyuck Park , Hee-duk Kim , Jung-hun Cho , Jong-wook Choi , Sung-bum Cho , Young-koo Lee , Jin-sung Kim , Jang-eun Lee , Ju-hyuck Chung , Sun-hoo Park , Jae-hyun Lee , Shin-woo Nam
IPC分类号： H01L21/306
CPC分类号： H01J37/32431 , C23C16/4583 , C23C16/4585 , C23C16/54 , H01J37/32623 , H01J37/32642 , H01L21/32136 , H01L21/6831 , H01L21/68735 , Y10T117/10
摘要： A process chamber used in the manufacture of a semiconductor device for etching a material layer on a semiconductor wafer includes an electrostatic chuck for holding the semiconductor wafer, and an annular edge ring which surrounds the side of the semiconductor wafer on the electrostatic chuck to prevent the semiconductor wafer from departing from its original position. The annular edge ring has a first side which faces the side of the semiconductor wafer and contacts firmly with the side of the semiconductor wafer.

4. 发明授权

US06207557B1 Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same 有权
标题翻译：通过多步化学气相沉积工艺形成多层氮化钛膜的方法和使用其制造半导体器件的方法
公开(公告)号：US06207557B1
公开(公告)日：2001-03-27
申请号：US09356928
申请日：1999-07-19
申请人： Jang-eun Lee , Ju-hyuck Chung , Tae-wook Seo
发明人： Jang-eun Lee , Ju-hyuck Chung , Tae-wook Seo
IPC分类号： H01L214763
CPC分类号： H01L21/76856 , H01L21/28556 , H01L21/76843 , H01L21/76846
摘要： A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate. A Ti film is formed on the inner wall of the contact hole. A multilayer TiN film is formed on the Ti film by the multiple step CVD method. A metal plug is formed on the multilayer TiN film.
摘要翻译：提供了通过多步化学气相沉积法形成几乎不含任何Cl成分的多层氮化钛膜的方法，以及制造使用其的半导体器件的方法。在本发明中，通过在其上形成有底层的半导体衬底上进行多步化学气相沉积（CVD）形成多层TiN膜。为了形成多层TiN膜，通过在底层上形成第一TiN膜，并对第一TiN膜进行NH 3退火，形成下层保护TiN膜。通过在底层保护性TiN膜上形成第二TiN膜并使NH 3退火第二TiN膜来形成主TiN膜。用于形成第一TiN膜的源气体与用于形成第二TiN膜的源气体相比具有较小的TiCl 4与NH 3气体流量比。为了将多层TiN膜施加到半导体器件的制造中，在半导体衬底上形成具有接触孔的绝缘膜。在接触孔的内壁上形成有Ti膜。通过多步CVD法在Ti膜上形成多层TiN膜。在多层TiN膜上形成金属塞。

5. 发明授权

US06291342B1 Methods of forming titanium nitride composite layers using composite gases having increasing TiCl4 to NH3 ratios 有权
公开(公告)号：US06291342B1
公开(公告)日：2001-09-18
申请号：US09767523
申请日：2001-01-23
申请人： Jang-eun Lee , Ju-hyuck Chung , Tae-wook Seo
发明人： Jang-eun Lee , Ju-hyuck Chung , Tae-wook Seo
IPC分类号： H01L214763
摘要： A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate. A Ti film is formed on the inner wall of the contact hole. A multilayer TiN film is formed on the Ti film by the multiple step CVD method. A metal plug is formed on the multilayer TiN film.

6. 发明申请

US20080211036A1 Bipolar Resistive Memory Device Having Tunneling Layer 审中-公开
标题翻译：具有隧道层的双极电阻存储器件
公开(公告)号：US20080211036A1
公开(公告)日：2008-09-04
申请号：US12037400
申请日：2008-02-26
申请人： Jin Shi Zhao , Jang-eun Lee , In-gyu Baek , Se-chung Oh , Kyung-tae Nam , Eun-kyung Yim
发明人： Jin Shi Zhao , Jang-eun Lee , In-gyu Baek , Se-chung Oh , Kyung-tae Nam , Eun-kyung Yim
IPC分类号： H01L29/8605 , H01C1/012
CPC分类号： H01L27/115 , H01L27/112 , H01L27/2436 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/146
摘要： A nonvolatile memory device includes a semiconductor substrate, a first electrode on the semiconductor substrate, a resistive layer on the first electrode, a second electrode on the resistive layer and at least one tunneling layer interposed between the resistive layer and the first electrode and/or the second electrode. The resistive layer and the tunneling layer may support transition between first and second resistance states responsive to first and second voltages applied across the first and second electrodes. The first and second voltages may have opposite polarities.
摘要翻译：非易失性存储器件包括半导体衬底，半导体衬底上的第一电极，第一电极上的电阻层，电阻层上的第二电极和介于电阻层和第一电极之间的至少一个隧道层和/或第二电极。电阻层和隧道层可以响应于施加在第一和第二电极上的第一和第二电压来支持第一和第二电阻状态之间的转变。第一和第二电压可以具有相反的极性。

7. 发明申请

US20130171743A1 MAGNETIC DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：磁性装置及其制造方法
公开(公告)号：US20130171743A1
公开(公告)日：2013-07-04
申请号：US13729147
申请日：2012-12-28
申请人： Jang-eun Lee , Soon-oh Park , Sang-hwan Park , Hee-ju Shin
发明人： Jang-eun Lee , Soon-oh Park , Sang-hwan Park , Hee-ju Shin
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228
摘要： A magnetic device and a method of manufacturing the same. In the method, a lower magnetic layer, an insulation layer, and an upper magnetic layer are sequentially formed on a substrate. An upper magnetic layer pattern is formed by patterning the upper magnetic layer until an upper surface of the insulation layer is exposed. An isolation layer pattern is formed from portions of the insulation layer and the lower magnetic layer by performing an oxidation process on the exposed upper surface of the insulation layer, and an insulation layer pattern and a lower magnetic layer pattern are formed from portions of the insulation layer and the lower magnetic layer, where the isolation layer pattern is not formed.
摘要翻译：磁性装置及其制造方法。在该方法中，在基板上依次形成下磁性层，绝缘层和上磁性层。通过图案化上磁性层直到绝缘层的上表面露出来形成上部磁性层图案。通过在绝缘层的暴露的上表面上进行氧化处理，从绝缘层和下部磁性层的部分形成隔离层图案，并且绝缘层图案和下部磁性层图案由绝缘体的一部分形成层和下磁性层，其中不形成隔离层图案。

8. 发明申请

US20080118993A1 Method of manufacturing magnetic random access memory (MRAM) 审中-公开
标题翻译：制造磁性随机存取存储器（MRAM）的方法
公开(公告)号：US20080118993A1
公开(公告)日：2008-05-22
申请号：US12000156
申请日：2007-12-10
申请人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
发明人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
IPC分类号： H01L21/00
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和磁膜，磁膜封闭金属膜。

9. 发明授权

US07317219B2 Magnetic random access memory (MRAM) and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器（MRAM）及其制造方法
公开(公告)号：US07317219B2
公开(公告)日：2008-01-08
申请号：US10971704
申请日：2004-10-25
申请人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
发明人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和磁膜，磁膜封闭金属膜。

10. 发明申请

US20050146967A1 Magnetic random access memory (MRAM) and method of manufacturing the same 有权
标题翻译：磁性随机存取存储器（MRAM）及其制造方法
公开(公告)号：US20050146967A1
公开(公告)日：2005-07-07
申请号：US10971704
申请日：2004-10-25
申请人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
发明人： Sang-jin Park , Tae-wan Kim , Wan-jun Park , Jang-eun Lee
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L27/115 , H01L43/08
CPC分类号： H01L43/08 , G11C11/15 , H01L43/12
摘要： A magnetic random access memory (MRAM), and a method of manufacturing the same, includes a switching device and a magnetic tunneling junction (MTJ) cell connected to the switching device, wherein the MTJ cell includes a pinned film having a metal film and a magnetic film, the magnetic film enclosing the metal film.
摘要翻译：磁性随机存取存储器（MRAM）及其制造方法包括连接到开关器件的开关器件和磁性隧道结（MTJ）单元，其中MTJ单元包括具有金属膜和磁膜，磁膜封闭金属膜。

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