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1. 发明申请

US20090258497A1 PHOTORESIST RESIN, AND METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING DISPLAY PANEL USING THE SAME 审中-公开
标题翻译：光电树脂，以及形成图案的方法和使用其制造显示面板的方法
公开(公告)号：US20090258497A1
公开(公告)日：2009-10-15
申请号：US12389296
申请日：2009-02-19
申请人： Jeong-Min Park , Doo-Hee Jung , Jung-Soo Lee , Hi-Kuk Lee , Sae-Tae Oh , Jae-Young Choi , Doek-Man Kang
发明人： Jeong-Min Park , Doo-Hee Jung , Jung-Soo Lee , Hi-Kuk Lee , Sae-Tae Oh , Jae-Young Choi , Doek-Man Kang
IPC分类号： H01L21/311 , G03F7/00
CPC分类号： G03F7/0236 , G03F7/0007
摘要： A photoresist resin composition, a method for forming a pattern and a method for manufacturing a display panel using the photoresist resin composition are disclosed. The photoresist resin composition includes an alkali soluble resin, a photoresist compound, and a solvent, wherein the alkali soluble resin includes a first polymer resin represented by the following Chemical Formula 1, wherein, of R1, R2, R3, R4, R5 and R6, at least one is a hydroxyl group, at least two are methyl groups and any remaining groups are hydrogen, and of R7, R8, R9, R10 and R11, at least one is a hydroxyl group, at least two are methyl groups and any remaining groups are hydrogen.
摘要翻译：公开了光致抗蚀剂树脂组合物，形成图案的方法和使用该光致抗蚀剂树脂组合物的显示面板的制造方法。光致抗蚀剂树脂组合物包括碱溶性树脂，光致抗蚀剂化合物和溶剂，其中碱溶性树脂包括由以下化学式1表示的第一聚合物树脂，其中R1，R2，R3，R4，R5和R6 至少一个是羟基，至少两个是甲基，任何剩余的基团是氢，R7，R8，R9，R10和R11中的至少一个是羟基，至少两个是甲基，任何剩余的基团是氢。

2. 发明申请

US20100055851A1 PHOTORESIST COMPOSTION, METHOD FOR FORMING THIN FILM PATTERNS, AND METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR USING THE SAME 审中-公开
标题翻译：光电组合物，形成薄膜图案的方法，以及使用其制造薄膜晶体管的方法
公开(公告)号：US20100055851A1
公开(公告)日：2010-03-04
申请号：US12389031
申请日：2009-02-19
申请人： Hi-Kuk Lee , Sang-Hyun Yun , Jung-In Park , Woo-Seok Jeon , Pil-Soon Hong , Doek-Man Kang , Sae-Tae Oh , Chang-Ik Lee
发明人： Hi-Kuk Lee , Sang-Hyun Yun , Jung-In Park , Woo-Seok Jeon , Pil-Soon Hong , Doek-Man Kang , Sae-Tae Oh , Chang-Ik Lee
IPC分类号： H01L21/336 , C08F118/16 , G03F7/00
CPC分类号： H01L29/66765 , G03F7/0388
摘要： The present invention relates to a photoresist composition that comprises a resin that is represented by Formula 1, a method for forming a thin film pattern, and a method for manufacturing a thin film transistor array panel by using the same. Herein, R is a methylene group, and n is an integer of 1 or more.
摘要翻译：本发明涉及一种光致抗蚀剂组合物，其包含由式1表示的树脂，薄膜图案的形成方法以及使用该薄膜晶体管阵列板的方法。这里，R为亚甲基，n为1以上的整数。

3. 发明授权

US07172996B2 Cleaning agent composition for a positive or a negative photoresist 有权
标题翻译：用于正性或负性光致抗蚀剂的清洁剂组合物
公开(公告)号：US07172996B2
公开(公告)日：2007-02-06
申请号：US10500752
申请日：2003-01-09
申请人： Sae-Tae Oh , Doek-Man Kang , Kyung-Soo Choi
发明人： Sae-Tae Oh , Doek-Man Kang , Kyung-Soo Choi
IPC分类号： C11D7/50
CPC分类号： C11D7/264 , C11D3/3707 , C11D7/263 , C11D7/3263 , C11D7/3281 , C11D11/0047 , G03F7/168
摘要： The present invention relates to a composition for cleaning a photoresist and is to provide a cleaning composition wherein the residue of the photoresist does not remain on the boundary surface between the cleaned area and the not-cleaned area after a negative photoresist containing pigment is cleaned, soft-baked, exposed and developed. The present invention provides a composition for cleaning a positive or negative photoresist which comprises (a) from 0.1 to 20 wt. % of and alkyl oxide polymer with a molecular weight of from 50 to 2000 and (b) from 80 to 99.9 wt. % of an organic solvent comprising: (b−1) from 1 to 20 parts by weight of dipropylene glycol methyl ether (DPGME), from 10 to 50 parts by weight of N-methyl pyrolidone (NMP) and from 50 to 90 parts by weight of methyl isobutyl ketone (MIBK), or (b−2) from 10 to 90 parts by weight of dimethyl formaldehyde (DMF) or dimethylacetamide (DMAc) and from 10 to 50 parts by weight of n-butyl acetate.
摘要翻译：本发明涉及一种用于清洁光致抗蚀剂的组合物，并且提供一种清洁组合物，其中在清洁含有负性光致抗蚀剂的颜料之后，光致抗蚀剂的残留物不残留在清洁区域和未清洁区域之间的边界表面上，软烤，暴露和发达。本发明提供一种用于清洗正性或负性光致抗蚀剂的组合物，其包含（a）0.1-20wt。％和分子量为50至2000的烷基氧化物聚合物和（b）80至99.9重量％％的有机溶剂含有：（b-1）1〜20重量份二丙二醇甲基醚（DPGME），10〜50重量份N-甲基吡咯烷酮（NMP）和50〜90重量份甲基异丁基酮（MIBK）的重量，或（b-2）10至90重量份的二甲基甲醛（DMF）或二甲基乙酰胺（DMAc）和10至50重量份的乙酸正丁酯。

4. 发明申请

US20050119142A1 Cleaning agent composition for a positive or a negative photoresist 有权
标题翻译：用于正性或负性光致抗蚀剂的清洁剂组合物
公开(公告)号：US20050119142A1
公开(公告)日：2005-06-02
申请号：US10500752
申请日：2003-01-09
申请人： Sae-Tae Oh , Doek-Man Kang , Kyung-Soo Choi
发明人： Sae-Tae Oh , Doek-Man Kang , Kyung-Soo Choi
IPC分类号： C11D3/37 , C11D7/26 , C11D7/32 , C11D11/00 , G03F7/16 , G03F7/42 , H01L21/027 , H01L21/304 , C11D1/00
CPC分类号： C11D7/264 , C11D3/3707 , C11D7/263 , C11D7/3263 , C11D7/3281 , C11D11/0047 , G03F7/168
摘要： The present invention relates to a composition for cleaning a photoresist and is to provide a cleaning composition wherein the residue of the photoresist does not remain on the boundary surface between the cleaned area and the not-cleaned area after a negative photoresist containing pigment is cleaned, soft-baked, exposed and developed. The present invention provides a composition for cleaning a positive or negative photoresist which comprises (a) from 0.1 to 20 wt. % of and alkyl oxide polymer with a molecular weight of from 50 to 2000 and (b) from 80 to 99.9 wt. % of an organic solvent comprising: (b−1) from 1 to 20 parts by weight of dipropylene glycol methyl ether (DPGME), from 10 to 50 parts by weight of N-methyl pyrolidone (NMP) and from 50 to 90 parts by weight of methyl isobutyl ketone (MIBK), or (b−2) from 10 to 90 parts by weight of dimethyl formaldehyde (DMF) or dimethylacetamide (DMAc) and from 10 to 50 parts by weight of n-butyl acetate.
摘要翻译：本发明涉及一种用于清洁光致抗蚀剂的组合物，并且提供一种清洁组合物，其中在清洁含有负性光致抗蚀剂的颜料之后，光致抗蚀剂的残留物不残留在清洁区域和未清洁区域之间的边界表面上，软烤，暴露和发达。本发明提供一种用于清洗正性或负性光致抗蚀剂的组合物，其包含（a）0.1-20wt。％和分子量为50至2000的烷基氧化物聚合物和（b）80至99.9重量％％的有机溶剂含有：（b-1）1〜20重量份二丙二醇甲基醚（DPGME），10〜50重量份N-甲基吡咯烷酮（NMP）和50〜90重量份甲基异丁基酮（MIBK）的重量，或（b-2）10至90重量份的二甲基甲醛（DMF）或二甲基乙酰胺（DMAc）和10至50重量份的乙酸正丁酯。

5. 发明授权

US06645682B2 Thinner for rinsing photoresist and method of treating photoresist layer 失效
标题翻译：用于冲洗光刻胶的稀释剂和处理光致抗蚀剂层的方法
公开(公告)号：US06645682B2
公开(公告)日：2003-11-11
申请号：US10169033
申请日：2002-06-25
申请人： Hong-Sick Park , Jin-Ho Ju , Yu-Kyung Lee , Sung-Chul Kang , Sae-Tae Oh , Doek-Man Kang
发明人： Hong-Sick Park , Jin-Ho Ju , Yu-Kyung Lee , Sung-Chul Kang , Sae-Tae Oh , Doek-Man Kang
IPC分类号： G03F742
CPC分类号： G03F7/168 , G03F7/38 , G03F7/42 , G03F7/422 , H01L21/02052 , H01L21/0274 , H01L21/31133
摘要： A thinner for rinsing photoresist including 50 to 80 wt. % of n-butyl acetate, propylene glycol alkyl ether, and propylene glycol alkyl ether acetate, is provided. The thinner is neither toxic to humans nor ecologically undesirable and has no unpleasant odor. The waste solutions thereof and associated waste water are easily handed so as to render this thinner environmental friendly. Additionally, the photoresist thinner of the present invention has excellent rinsing ability.
摘要翻译：用于冲洗光致抗蚀剂的稀释剂，包括50至80wt。提供了乙酸正丁酯，丙二醇烷基醚和丙二醇烷基醚乙酸酯的％。稀释剂既不对人体有毒，也不对生态有害，无异味。其废溶液和相关的废水容易交付，以使其更环保。此外，本发明的光致抗蚀剂薄膜具有优异的漂洗能力。

6. 发明申请

US20060263714A1 Resist composition and organic solvent for removing resist 审中-公开
标题翻译：抗蚀剂组合物和去除抗蚀剂的有机溶剂
公开(公告)号：US20060263714A1
公开(公告)日：2006-11-23
申请号：US10551215
申请日：2004-04-23
申请人： Doek-Man Kang
发明人： Doek-Man Kang
IPC分类号： G03C1/00
CPC分类号： G03F7/0226 , G03F7/0048
摘要： The present invention provides a resist composition comprising benzyl alcohol or its derivatives as an organic solvent. The present invention also provides an organic solvent for removing a resist, wherein the organic solvent comprises benzyl alcohol or its derivatives. The resist composition of the present invention is used in a lithography process for forming a micro-pattern using a difference in the solubility between the irradiated part and the non-irradiated part by irradiation with UV rays to greatly improve the uniformity of the film thickness upon coating of the thin film. In addition, the organic solvent according to the present invention can be used to wash the device, which comes into contact with the photosensitive material in the course of the microcircuit forming process, by removing the photosensitive material from the device. It also can remove the photosensitive material remaining on the undesired parts of the substrate on which the photosensitive material is coated.
摘要翻译：本发明提供了含有苄醇或其衍生物作为有机溶剂的抗蚀剂组合物。本发明还提供了用于除去抗蚀剂的有机溶剂，其中有机溶剂包括苄醇或其衍生物。本发明的抗蚀剂组合物用于通过用紫外线照射照射部分和未照射部分之间的溶解度差异形成微图案的光刻工艺，以大大提高膜厚度的均匀性薄膜的涂层。此外，根据本发明的有机溶剂可以用于在微电路形成过程中与感光材料接触的装置，通过从装置中除去感光材料来洗涤该装置。它还可以除去留在感光材料被涂覆的基材的不需要部分上的感光材料。

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