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    • 8. 发明申请
    • METHOD OF DETERMINING AN OVERLAP DISTANCE OF AN OPTICAL HEAD AND DIGITAL EXPOSURE DEVICE USING THE METHOD
    • 使用该方法确定光头和数字曝光装置的重叠距离的方法
    • US20110199620A1
    • 2011-08-18
    • US12902745
    • 2010-10-12
    • Sang-Hyun YUNHi-Kuk LEESang-Woo BAECha-Dong KIMJung-In PARK
    • Sang-Hyun YUNHi-Kuk LEESang-Woo BAECha-Dong KIMJung-In PARK
    • G01B11/14
    • G01B11/14G03F7/70291G03F7/70475
    • An apparatus and a method for determining an overlap distance of an optical head is disclosed. Positions and light amount distributions of each light spot can be measured, which may be provided from an optical head to a substrate. Gaussian distribution may be applied to the positions and the light amount distributions to calculate a compensation model of each of the light spots. A first accumulated light amount corresponding to each first area of the substrate may be calculated if the optical head is scanning along a first direction of the substrate using the compensation model. A second accumulated light amount corresponding to each second area overlapped with the each first area is calculated if the optical head is scanning along the first direction, which is moved in a second direction by a first distance using the compensation model. An overlap distance may be determined based on a uniformity of summations of the first and second accumulated light amount.
    • 公开了一种用于确定光学头的重叠距离的装置和方法。 可以测量每个光点的位置和光量分布,其可以从光学头到基底提供。 高斯分布可以应用于位置和光量分布,以计算每个光点的补偿模型。 如果光头使用补偿模型沿着衬底的第一方向扫描,则可以计算对应于衬底的每个第一区域的第一累积光量。 如果光头沿着使用补偿模型沿第二方向在第二方向上移动第一距离的第一方向进行扫描,则计算与每个第一区域重叠的每个第二区域对应的第二累积光量。 可以基于第一和第二累积光量的相加的均匀性来确定重叠距离。
    • 10. 发明申请
    • METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME
    • 制造薄膜晶体管的方法和使用其制造显示器基板的方法
    • US20110230019A1
    • 2011-09-22
    • US12900936
    • 2010-10-08
    • Sang-Hyun YUNCha-Dong KIMJung-In PARKHi-Kuk LEE
    • Sang-Hyun YUNCha-Dong KIMJung-In PARKHi-Kuk LEE
    • H01L21/336
    • H01L27/1288H01L27/1214
    • An approach for patterning and etching without a mask is provided in a manufacturing a thin-film transistor, a gate electrode, a gate insulating layer, a semiconductor layer, an ohmic contact layer and source metal layer of a substrate. A first photoresist pattern including a first photo pattern and a second photo pattern is formed using a digital exposure device by generating a plurality of spot beams, the first photo pattern is formed to a first region of the base substrate and has a first thickness, and the second photo pattern is formed to a second region adjacent to the first region, and has a second thickness and a width in a range of about 50% to about 60% of a diameter of the spot beam. The source metal layer is patterned to form a source electrode and a drain electrode, and the source electrode and the drain electrode are spaced apart from each other in the first region of an active pattern.
    • 在制造薄膜晶体管,栅极电极,栅极绝缘层,半导体层,欧姆接触层和源极金属层的衬底的制造中提供了用于没有掩模的图案化和蚀刻的方法。 使用数字曝光装置通过产生多个点光来形成包括第一照片图案和第二照片图案的第一光致抗蚀剂图案,第一照片图案形成于基底基板的第一区域并具有第一厚度,并且 第二照片图案形成在与第一区域相邻的第二区域上,并且具有第二厚度和在点光束直径的约50%至约60%的范围内的宽度。 图案化源极金属层以形成源电极和漏电极,并且源电极和漏电极在活性图案的第一区域中彼此间隔开。