专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08987798B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices 有权
标题翻译：磁隧道结设备，存储器，存储器系统和电子设备
公开(公告)号：US08987798B2
公开(公告)日：2015-03-24
申请号：US14306792
申请日：2014-06-17
申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： H01L43/02 , H01L43/08 , H01L43/10 , G06F13/16
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
摘要翻译：本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。

2. 发明申请

US20130042081A1 MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, MEMORY SYSTEMS, AND ELECTRONIC DEVICES 有权
公开(公告)号：US20130042081A1
公开(公告)日：2013-02-14
申请号：US13398640
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G06F12/00 , H01L43/06
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

3. 发明授权

US09356228B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices 有权
公开(公告)号：US09356228B2
公开(公告)日：2016-05-31
申请号：US14618534
申请日：2015-02-10
申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： H01L21/14 , H01L43/08 , H01L43/10 , G06F13/16 , H01L43/02
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.

4. 发明授权

US09065039B2 Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same 有权
公开(公告)号：US09065039B2
公开(公告)日：2015-06-23
申请号：US14579803
申请日：2014-12-22
申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Woo Jin Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Woo Jin Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G11C11/00 , H01L43/08 , H01L43/02
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
摘要： Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.

5. 发明申请

US20120236631A1 MAGNETIC TUNNELING JUNCTION DEVICES, MEMORIES, ELECTRONIC SYSTEMS, AND MEMORY SYSTEMS, AND METHODS OF FABRICATING THE SAME 有权
标题翻译：磁性隧道连接装置，存储器，电子系统和存储器系统及其制造方法
公开(公告)号：US20120236631A1
公开(公告)日：2012-09-20
申请号：US13398617
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Woo Jin Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Se Chung Oh , Woo Jin Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
摘要： Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
摘要翻译：提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及在垂直磁化保持层和磁性层之间的垂直磁化诱导层。

6. 发明授权

US08772846B2 Magnetic tunneling junction devices, memories, memory systems, and electronic devices 有权
标题翻译：磁隧道结设备，存储器，存储器系统和电子设备
公开(公告)号：US08772846B2
公开(公告)日：2014-07-08
申请号：US13398640
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Young Hyun Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： H01L21/14
CPC分类号： H01L43/08 , G06F13/16 , G11C11/161 , G11C11/1659 , H01L43/02 , H01L43/10
摘要： Provided is a magnetic tunneling junction device including a first structure including a magnetic layer; a second structure including at least two extrinsic perpendicular magnetization structures, each including a magnetic layer and; a perpendicular magnetization inducing layer on the magnetic layer; and a tunnel barrier between the first and second structures.
摘要翻译：本发明提供一种包括具有磁性层的第一结构的磁性隧道接合装置; 包括至少两个外在垂直磁化结构的第二结构，每个包括磁性层; 磁性层上的垂直磁化诱导层; 以及第一和第二结构之间的隧道屏障。

7. 发明授权

US08947914B2 Magnetic tunneling junction devices, memories, electronic systems, and memory systems, and methods of fabricating the same 有权
标题翻译：磁隧道结装置，存储器，电子系统和存储系统及其制造方法
公开(公告)号：US08947914B2
公开(公告)日：2015-02-03
申请号：US13398617
申请日：2012-02-16
申请人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
发明人： Jeong Heon Park , Woo Chang Lim , Sechung Oh , Woojin Kim , Sang Hwan Park , Jang Eun Lee
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L43/10 , H01L43/12 , H01L27/22
CPC分类号： H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1659 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12 , Y10S977/933 , Y10S977/935
摘要： Provided is a magnetic tunneling junction device including a fixed magnetic structure; a free magnetic structure; and a tunnel barrier between the fixed magnetic structure and the free magnetic structure, at least one of the fixed magnetic structure and the free magnetic structure including a perpendicular magnetization preserving layer, a magnetic layer between the perpendicular magnetization preserving layer and the tunnel barrier, and a perpendicular magnetization inducing layer between the perpendicular magnetization preserving layer and the magnetic layer.
摘要翻译：提供一种包括固定磁性结构的磁性隧道接合装置; 自由磁结构; 以及在所述固定磁性结构和所述自由磁性结构之间的隧道势垒，所述固定磁性结构和所述自由磁性结构中的至少一个包括垂直磁化保持层，所述垂直磁化保留层与所述隧道势垒之间的磁性层，以及在垂直磁化保持层和磁性层之间的垂直磁化诱导层。

8. 发明授权

US08697484B2 Method and system for setting a pinned layer in a magnetic tunneling junction 有权
标题翻译：用于设置磁隧道结中钉扎层的方法和系统
公开(公告)号：US08697484B2
公开(公告)日：2014-04-15
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

9. 发明申请

US20130154034A1 METHOD AND SYSTEM FOR SETTING A PINNED LAYER IN A MAGNETIC TUNNELING JUNCTION 有权
标题翻译：用于在磁性隧道结中设置固定层的方法和系统
公开(公告)号：US20130154034A1
公开(公告)日：2013-06-20
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

10. 发明授权

US09276198B2 Magnetic memory devices 有权
标题翻译：磁存储器件
公开(公告)号：US09276198B2
公开(公告)日：2016-03-01
申请号：US13967340
申请日：2013-08-14
申请人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
发明人： Woo Chang Lim , Sangyong Kim , Whankyun Kim , Sang Hwan Park , Jeongheon Park
IPC分类号： H01L43/08 , G11C11/16
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659
摘要： A magnetic memory device according to embodiments includes a first reference magnetic layer on a substrate, a second reference magnetic layer on the first reference magnetic layer, a free layer between the first reference magnetic layer and the second reference magnetic layer, a first tunnel barrier layer between the first reference magnetic layer and the free layer, and a second tunnel barrier layer between the second reference magnetic layer and the free layer. The first reference magnetic, second reference magnetic and free layers each have a magnetization direction substantially perpendicular to a top surface of the substrate. A resistance-area product (RA) value of the first tunnel barrier layer is greater than that of the second tunnel barrier layer.
摘要翻译：根据实施例的磁存储器件包括衬底上的第一参考磁性层，第一参考磁性层上的第二参考磁性层，第一参考磁性层和第二参考磁性层之间的自由层，第一隧道势垒层在第一参考磁性层和自由层之间，以及在第二参考磁性层和自由层之间的第二隧道势垒层。第一参考磁性，第二参考磁性和自由层各自具有基本上垂直于衬底顶表面的磁化方向。第一隧道势垒层的电阻面积乘积（RA）值大于第二隧道势垒层的电阻面积积（RA）值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式