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1. 发明授权

US06424189B1 Apparatus and system for multi-stage event synchronization 失效
标题翻译：多级事件同步的装置和系统
公开(公告)号：US06424189B1
公开(公告)日：2002-07-23
申请号：US09687418
申请日：2000-10-13
申请人： Jen-Pin Su , Tsan-Hui Chen , Wen-Hsiang Lin , Chun-Chieh Wu , Chang-Fu Lin
发明人： Jen-Pin Su , Tsan-Hui Chen , Wen-Hsiang Lin , Chun-Chieh Wu , Chang-Fu Lin
IPC分类号： H03L700
CPC分类号： G06F5/06 , H04L7/005 , H04L7/02
摘要： The present invention discloses an apparatus and system for multi-stage event synchronization, whose main object is to eliminate the drawbacks of an expensive synchronization circuit used to balance the data transmissions between an origination agent and a destination agent operating at different frequencies or clock phases as in prior art. The apparatus of the present invention organizes the slower one with multi-stage chains, each of which comprises a simple synchronization circuit and an XOR gate, for receiving the number of events transmitted from the faster one. Therefore, the slower one will not miss the data from the faster one.
摘要翻译：本发明公开了一种用于多级事件同步的装置和系统，其主要目的是消除用于平衡在不同频率或时钟相位工作的发起代理和目的代理之间的数据传输的昂贵的同步电路的缺点，如在现有技术中。本发明的装置组合了具有多级链的较慢级的链，其中每一级都包括一个简单的同步电路和一个异或门，用于接收从较快级链发送的事件数。因此，较慢的数据不会错过更快的数据。

2. 发明授权

US06317813B1 Method for arbitrating multiple memory access requests in a unified memory architecture via a non unified memory controller 失效
标题翻译：通过非统一存储器控制器在统一存储器架构中仲裁多个存储器访问请求的方法
公开(公告)号：US06317813B1
公开(公告)日：2001-11-13
申请号：US09314245
申请日：1999-05-18
申请人： Jen-Pin Su , Chun-Chieh Wu , Wen-Hsiang Lin , Tsan-hui Chen
发明人： Jen-Pin Su , Chun-Chieh Wu , Wen-Hsiang Lin , Tsan-hui Chen
IPC分类号： G06F1200
CPC分类号： G06F13/18
摘要： In a memory controller system, a method for granting a system memory by a memory request arbitrator to a request among a plurality of pending memory access requests is provided. The plurality of the memory access requests includes Rfrsh_Hreq, Crt_Hreq, Group AB, Crt_Lreq and Rfrsh_Lreq and are respectively asserted by a host control circuitry and/or a graphical control circuitry which are implemented and integrated on a single monolithic semiconductor chip. The host control circuitry and the graphical control circuitry shares the system memory and the memory request arbitrator includes a refresh queue and the graphics control circuitry includes a CRT FIFO. The method prioritizes the plurality of the memory access requests in order of Rfrsh_Hreq>Crt_Hreq>Group AB>Crt_Lreq>Rfrsh_Lreq. The Rfsh_Hreq is memory refresh request signal of first type whenever the refresh queue being full, the Crt_Hreq is memory access signal of a first type for fueling the CRT FIFO with display data, the Group AB are memory access request signals of a second type output either from the graphical control circuitry or the host control circuitry, the Crt_Lreq is memory access signal of a third type for fueling the CRT FIFO with display data, the Rfrsh_Lreq is memory refresh request signal of second type whenever the refresh queue being non-empty.
摘要翻译：在存储器控制器系统中，提供了一种通过存储器请求仲裁器将系统存储器授予多个未决存储器访问请求中的请求的方法。多个存储器访问请求包括Rfrsh_Hreq，Crt_Hreq，组AB，Crt_Lreq和Rfrsh_Lreq，并且分别由实现并集成在单个单片半导体芯片上的主机控制电路和/或图形控制电路断言。主机控制电路和图形控制电路共享系统存储器，并且存储器请求仲裁器包括刷新队列，并且图形控制电路包括CRT FIFO。该方法按照Rfrsh_Hreq> Crt_Hreq> Group AB> Crt_Lreq> Rfrsh_Lreq的顺序对多个存储器访问请求进行优先级排序。 Rfsh_Hreq是刷新队列满时的第一种类型的存储器刷新请求信号，Crt_Hreq是用于向显示数据供给CRT FIFO的第一种存储器访问信号，组AB是第二类型输出的存储器访问请求信号从图形控制电路或主机控制电路，Crt_Lreq是用于向CRT FIFO加载显示数据的第三种存储器访问信号，每当刷新队列不为空时，Rfrsh_Lreq是第二类型的存储器刷新请求信号。

3. 外观设计

USD646806S1 Mobile lamp 有权
标题翻译：手机灯
公开(公告)号：USD646806S1
公开(公告)日：2011-10-11
申请号：US29385867
申请日：2011-02-22
申请人： Po-Wei Li , Wen-Hsiang Lin , Shih-Chang Hsu , Yuan-Yuan Lee
设计人： Po-Wei Li , Wen-Hsiang Lin , Shih-Chang Hsu , Yuan-Yuan Lee

4. 外观设计

USD645588S1 Mobile lamp 有权
公开(公告)号：USD645588S1
公开(公告)日：2011-09-20
申请号：US29385866
申请日：2011-02-22
申请人： Po-Wei Li , Wen-Hsiang Lin , Shih-Chang Hsu , Yuan-Yuan Lee
设计人： Po-Wei Li , Wen-Hsiang Lin , Shih-Chang Hsu , Yuan-Yuan Lee

5. 发明授权

US07497905B2 Ternary nitride-based buffer layer of a nitride-based light-emitting device and a method for manufacturing the same 有权
标题翻译：氮化物系发光元件的三元氮化物系缓冲层及其制造方法
公开(公告)号：US07497905B2
公开(公告)日：2009-03-03
申请号：US10711567
申请日：2004-09-24
申请人： Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
发明人： Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
IPC分类号： C30B25/02
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.
摘要翻译：氮化物系发光元件的三元氮化物系缓冲层及其制造方法。该装置包括基板和多个层，其以下列顺序形成在基板上：三元氮化物基缓冲层，第一导电型氮化物基半导体层，发光层和第二导电型氮化物基缓冲层，基于半导体层。该制造方法包括将包含第一III族元素的第一反应源在随后沉积在基材表面上的第一温度下引入室中，所述元素的熔点低于第一温度。在不低于第一III族元素的熔点的第二温度下引入含有第二组III元素的第二反应源和含有氮元素的第三反应源，用于形成三元氮化物基缓冲层与第一组III元素。

6. 发明申请

US20070270003A1 POWER SUPPLY APPARATUS HAVING MULTIPLE POWER OUTPUT DEVICES 审中-公开
标题翻译：具有多个电力输出装置的电源装置
公开(公告)号：US20070270003A1
公开(公告)日：2007-11-22
申请号：US11534104
申请日：2006-09-21
申请人： Wen-Hsiang Lin , Szu-Lu Huang , Hung-Chang Hsieh
发明人： Wen-Hsiang Lin , Szu-Lu Huang , Hung-Chang Hsieh
IPC分类号： H01R13/648
CPC分类号： H01R13/6272 , H01R13/639
摘要： A power supply apparatus includes a main body, a power input device, a first power output device and a second power output device. The power input device is coupled to an input terminal of the main body. The first power output device includes a first cable and a first connector. The first cable is interconnected between a first output terminal of the main body and a first surface of the first connector. An extension part is extended from the first surface of the first connector. The second power output device includes a second cable and a second connector. A first surface of the second connector is suppressed by the extension part of the first connector to facilitate securely fixing the first connector and the second connector in a power socket, so that a regulated output voltage is outputted from the first and second output devices to the power socket.
摘要翻译：电源装置包括主体，电源输入装置，第一电力输出装置和第二电力输出装置。电源输入装置耦合到主体的输入端子。第一电力输出装置包括第一电缆和第一连接器。第一电缆在主体的第一输出端子和第一连接器的第一表面之间互连。延伸部分从第一连接器的第一表面延伸。第二电力输出装置包括第二电缆和第二连接器。第二连接器的第一表面被第一连接器的延伸部分抑制，以便将第一连接器和第二连接器牢固地固定在电源插座中，使得稳定的输出电压从第一和第二输出装置输出到电源插座。

7. 发明申请

US20050042908A1 Socket connector 审中-公开
标题翻译：插座连接器
公开(公告)号：US20050042908A1
公开(公告)日：2005-02-24
申请号：US10924696
申请日：2004-08-23
申请人： Po-Ning Sun , Wen-Hsiang Lin , Paohua Huang
发明人： Po-Ning Sun , Wen-Hsiang Lin , Paohua Huang
IPC分类号： H01R12/16 , H01R43/02 , H01R13/625 , H01R4/50
CPC分类号： H01R43/0256 , H01R12/7076
摘要： A socket connector (1) is provided which comprises a base (12) having a plurality of passages (126) formed therein, the passages are arrayed along a mounting surface (120) of the base, and each passage receives a conductive terminal therein. A cover (11) is attached to the base and adapted to slide on the base in a predetermined sliding direction. A plurality of recesses (130) is formed in the base and arrayed between some of adjacent arrays of the passages of the base, and the whole amount of the recesses in the base is less than the whole amount of the passages of the base.
摘要翻译：提供一种插座连接器（1），其包括其中形成有多个通道（126）的基座（12），沿着基座的安装表面（120）排列通道，并且每个通道在其中接收导电端子。盖（11）附接到基座并适于在预定的滑动方向上在基座上滑动。多个凹部（130）形成在基座中并且排列在基座的通道的相邻阵列之间，并且基座中的整个凹槽的数量小于基座的通道的总量。

8. 外观设计

USD705417S1 Ventilation fan with LED 有权
标题翻译：通风风扇带LED
公开(公告)号：USD705417S1
公开(公告)日：2014-05-20
申请号：US29445371
申请日：2013-02-11
申请人： Wen-Hsiang Lin , Long-Sing Ye , Yueh-Shan Lin
设计人： Wen-Hsiang Lin , Long-Sing Ye , Yueh-Shan Lin

9. 外观设计

USD681794S1 Exhaust fan with LED 有权
标题翻译：排风扇带LED
公开(公告)号：USD681794S1
公开(公告)日：2013-05-07
申请号：US29403116
申请日：2011-09-30
申请人： Wen-Hsiang Lin , Long-Sing Ye , Yueh-Shan Lin , Te-Chung Liu
设计人： Wen-Hsiang Lin , Long-Sing Ye , Yueh-Shan Lin , Te-Chung Liu

10. 发明申请

US20050221520A1 TERNARY NITRIDE-BASED BUFFER LAYER OF A NITRIDE-BASED LIGHT-EMITTING DEVICE AND A METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：基于氮化物的发光器件的基于氮化物的缓冲层及其制造方法
公开(公告)号：US20050221520A1
公开(公告)日：2005-10-06
申请号：US10711567
申请日：2004-09-24
申请人： Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
发明人： Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
IPC分类号： H01L21/00 , H01L21/20 , H01L21/205 , H01L33/06 , H01L33/12 , H01L33/32
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262
摘要： Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.
摘要翻译：氮化物系发光元件的三元氮化物系缓冲层及其制造方法。该装置包括基板和多个层，其以下列顺序形成在基板上：三元氮化物基缓冲层，第一导电型氮化物基半导体层，发光层和第二导电型氮化物基缓冲层，基于半导体层。该制造方法包括将包含第一III族元素的第一反应源在随后沉积在基材表面上的第一温度下引入室中，所述元素的熔点低于第一温度。在不低于第一III族元素的熔点的第二温度下引入含有第二组III元素的第二反应源和含有氮元素的第三反应源，用于形成三元氮化物基缓冲层与第一组III元素。

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