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1. 发明授权

US08772054B2 Focus control method for photolithography 有权
标题翻译：光刻对焦控制方法
公开(公告)号：US08772054B2
公开(公告)日：2014-07-08
申请号：US13227805
申请日：2011-09-08
申请人： Jen-Pan Wang , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
发明人： Jen-Pan Wang , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
IPC分类号： H01L21/66
CPC分类号： G03F7/70641 , G03F7/70341 , G03F9/7026 , G03F9/7034 , G03F9/7053
摘要： A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.
摘要翻译：一种方法包括提供在衬底上具有至少一层材料的半导体衬底。对基板施加声音，使得声波被材料层的顶表面反射。使用传感器检测声波。基于检测到的声波来确定顶面的形貌。确定的地形用于控制浸没光刻工艺。

2. 发明申请

US20130065328A1 FOCUS CONTROL METHOD FOR PHOTOLITHOGRAPHY 有权
标题翻译：聚焦控制方法
公开(公告)号：US20130065328A1
公开(公告)日：2013-03-14
申请号：US13227805
申请日：2011-09-08
申请人： Jen-Pan WANG , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
发明人： Jen-Pan WANG , Chien-Hsuan Liu , Ching-Hsien Chen , Chao-Chi Chen
IPC分类号： H01L21/66 , G03B27/52
CPC分类号： G03F7/70641 , G03F7/70341 , G03F9/7026 , G03F9/7034 , G03F9/7053
摘要： A method comprises providing a semiconductor substrate having at least one layer of a material over the substrate. A sound is applied to the substrate, such that a sound wave is reflected by a top surface of the layer of material The sound wave is detected using a sensor. A topography of the top surface is determined based on the detected sound wave. The determined topography is used to control an immersion lithography process.
摘要翻译：一种方法包括提供在衬底上具有至少一层材料的半导体衬底。对基板施加声音，使得声波被材料层的顶表面反射。使用传感器检测声波。基于检测到的声波来确定顶面的形貌。确定的地形用于控制浸没光刻工艺。

3. 发明授权

US08735024B2 Non-planar lithography mask and system and methods 有权
标题翻译：非平面光刻掩模及系统及方法
公开(公告)号：US08735024B2
公开(公告)日：2014-05-27
申请号：US13421235
申请日：2012-03-15
申请人： Chien-Hsuan Liu , Jen-Pan Wang
发明人： Chien-Hsuan Liu , Jen-Pan Wang
IPC分类号： G03F7/24 , G03F1/50
CPC分类号： G03F1/50 , G03F7/70283 , G03F7/703
摘要： Various non-planar lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a lens-type transparent substrate and a reticle pattern on a surface of the lens-type transparent substrate. The reticle pattern is opaque to optical radiation. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
摘要翻译：公开了各种非平面光刻掩模，使用这种光刻掩模的系统和方法。实施例是在透镜型透明基板的表面上包括透镜型透明基板和标线图案的光刻掩模。标线图案对于光学辐射是不透明的。公开了形成类似光刻掩模和使用类似光刻掩模的方法。

4. 发明授权

US08802333B2 Reflective lithography masks and systems and methods 有权
标题翻译：反光光刻面具及系统及方法
公开(公告)号：US08802333B2
公开(公告)日：2014-08-12
申请号：US13421113
申请日：2012-03-15
申请人： Chien-Hsuan Liu , Jen-Pan Wang
发明人： Chien-Hsuan Liu , Jen-Pan Wang
IPC分类号： G03F1/00
CPC分类号： G03F1/52 , G03F1/24 , G03F1/50 , G03F1/76 , G03F7/70058 , G03F7/70283 , G03F7/703
摘要： Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
摘要翻译：公开了各种非平面反射光刻掩模，使用这种光刻掩模的系统和方法。一个实施例是包括透明基板，反射材料和掩模版图案的光刻掩模。透明基板包括弯曲表面。反射材料与透明基板的弯曲表面相邻，并且反射材料和透明基板之间的界面是反射表面。标线图案位于透明基板的第二表面上。标线图案的反射率小于反射材料的反射率。公开了形成类似光刻掩模和使用类似光刻掩模的方法。

5. 发明申请

US20130244140A1 Non-Planar Lithography Mask and System and Methods 有权
标题翻译：非平面光刻面具及系统与方法
公开(公告)号：US20130244140A1
公开(公告)日：2013-09-19
申请号：US13421235
申请日：2012-03-15
申请人： Chien-Hsuan Liu , Jen-Pan Wang
发明人： Chien-Hsuan Liu , Jen-Pan Wang
IPC分类号： G03F7/20 , G03B27/54 , G03F1/00
CPC分类号： G03F1/50 , G03F7/70283 , G03F7/703
摘要： Various non-planar lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a lens-type transparent substrate and a reticle pattern on a surface of the lens-type transparent substrate. The reticle pattern is opaque to optical radiation. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
摘要翻译：公开了各种非平面光刻掩模，使用这种光刻掩模的系统和方法。实施例是在透镜型透明基板的表面上包括透镜型透明基板和标线图案的光刻掩模。标线图案对于光学辐射是不透明的。公开了形成类似光刻掩模和使用类似光刻掩模的方法。

6. 发明申请

US20130244139A1 Reflective Lithography Masks and Systems and Methods 有权
标题翻译：反光光刻面具及系统与方法
公开(公告)号：US20130244139A1
公开(公告)日：2013-09-19
申请号：US13421113
申请日：2012-03-15
申请人： Chien-Hsuan Liu , Jen-Pan Wang
发明人： Chien-Hsuan Liu , Jen-Pan Wang
IPC分类号： G03F1/52 , G03F7/20 , G03B27/54
CPC分类号： G03F1/52 , G03F1/24 , G03F1/50 , G03F1/76 , G03F7/70058 , G03F7/70283 , G03F7/703
摘要： Various non-planar reflective lithography masks, systems using such lithography masks, and methods are disclosed. An embodiment is a lithography mask comprising a transparent substrate, a reflective material, and a reticle pattern. The transparent substrate comprises a curved surface. The reflective material adjoins the curved surface of the transparent substrate, and an interface between the reflective material and the transparent substrate is a reflective surface. The reticle pattern is on a second surface of the transparent substrate. A reflectivity of the reticle pattern is less than a reflectivity of the reflective material. Methods for forming similar lithography masks and for using similar lithography masks are disclosed.
摘要翻译：公开了各种非平面反射光刻掩模，使用这种光刻掩模的系统和方法。一个实施例是包括透明基板，反射材料和掩模版图案的光刻掩模。透明基板包括弯曲表面。反射材料与透明基板的弯曲表面相邻，并且反射材料和透明基板之间的界面是反射表面。标线图案位于透明基板的第二表面上。标线图案的反射率小于反射材料的反射率。公开了形成类似光刻掩模和使用类似光刻掩模的方法。

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