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    • 3. 发明授权
    • Method and system for determining object height
    • 用于确定物体高度的方法和系统
    • US07567885B2
    • 2009-07-28
    • US11843978
    • 2007-08-23
    • Harald HerchenKim VelloreErica Renee Porras
    • Harald HerchenKim VelloreErica Renee Porras
    • G06F19/00
    • G01B5/061G01B7/082
    • An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.
    • 用于测量表面上方的物体的高度的装置和方法包括具有第一部分的壳体,该第一部分具有上表面和下表面,以及从第一部分的下表面延伸第一距离的延伸部分。 延伸部分限定了与第一部分的下表面相对的空腔。 该装置还包括通过壳体的第一部分的下表面并延伸到空腔中的一个或多个致动器。 另外,该装置包括由耦合到延伸部分的一个或多个柔性构件支撑的板。 板具有位于基本上平行于表面的平面中的顶表面和底表面。 此外,该装置包括设置在板的预定位置的多个传感器。 多个传感器中的每一个响应于在多个传感器中的每一个和表面之间测量的高度。
    • 6. 发明申请
    • METHOD AND SYSTEM FOR PERFORMING ELECTROSTATIC CHUCK CLAMPING IN TRACK LITHOGRAPHY TOOLS
    • 轨道切割工具中静电切割夹具的方法和系统
    • US20090109595A1
    • 2009-04-30
    • US11933152
    • 2007-10-31
    • Harald HerchenKim VelloreBrian C. Lue
    • Harald HerchenKim VelloreBrian C. Lue
    • H01L21/683
    • H01L21/6831
    • A method of clamping/declamping a semiconductor wafer on an electrostatic chuck in ambient air includes disposing the semiconductor wafer at a predetermined distance above a dielectric surface of the electrostatic chuck having one or more electrodes and applying a first voltage greater than a predetermined threshold to the one or more electrodes of the electrostatic chuck for a first time period. The method includes reducing the first voltage to a second voltage substantially equal to a self bias potential of the semiconductor wafer after the first time period. The method includes maintaining the second voltage for a second time period and adjusting the second voltage to a third voltage characterized by a polarity opposite to that of the first voltage and a magnitude smaller than the predetermined threshold. The method includes reducing the third voltage to a fourth voltage substantially equal to the second voltage after a third time period.
    • 在环境空气中将静电卡盘上的半导体晶片夹紧/放大的方法包括将半导体晶片设置在具有一个或多个电极的静电卡盘的电介质表面之上的预定距离处,并将大于预定阈值的第一电压施加到 静电卡盘的一个或多个电极第一时间段。 该方法包括在第一时间段之后将第一电压降低到基本上等于半导体晶片的自偏压电位的第二电压。 该方法包括将第二电压维持第二时间段,并将第二电压调整到第三电压,其特征在于具有与第一电压相反的极性和小于预定阈值的幅度。 该方法包括在第三时间段之后将第三电压降低到基本上等于第二电压的第四电压。
    • 8. 发明申请
    • Method and System for Determining Object Height
    • 确定对象高度的方法和系统
    • US20090055124A1
    • 2009-02-26
    • US11843978
    • 2007-08-23
    • Harald HerchenKim VelloreErica Renee Porras
    • Harald HerchenKim VelloreErica Renee Porras
    • G01B21/18G01B5/004
    • G01B5/061G01B7/082
    • An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.
    • 用于测量表面上方的物体的高度的装置和方法包括具有第一部分的壳体,该第一部分具有上表面和下表面,以及从第一部分的下表面延伸第一距离的延伸部分。 延伸部分限定了与第一部分的下表面相对的空腔。 该装置还包括通过壳体的第一部分的下表面并延伸到空腔中的一个或多个致动器。 另外,该装置包括由耦合到延伸部分的一个或多个柔性构件支撑的板。 板具有位于基本上平行于表面的平面中的顶表面和底表面。 此外,该装置包括设置在板的预定位置的多个传感器。 多个传感器中的每一个响应于在多个传感器中的每一个和表面之间测量的高度。
    • 9. 发明申请
    • Multi-stage flow control apparatus and method of use
    • 多级流量控制装置及其使用方法
    • US20070294870A1
    • 2007-12-27
    • US11475365
    • 2006-06-27
    • Ming-Kuei TsengKim Vellore
    • Ming-Kuei TsengKim Vellore
    • H01L21/67
    • H01L21/67225G05D7/0647H01L21/6715
    • A multi-stage flow control apparatus for use during the processing of a semiconductor substrate is provided. The multi-stage flow control apparatus includes a first inlet and a second inlet, an outlet, and a first throttle valve stage coupled to the first inlet. The first throttle valve stage includes a first throttle valve plug located within the first throttle valve stage. The first throttle valve plug is configured to control the amount of airflow through the first throttle valve stage by modulating the distance between the first throttle valve plug and faces of the first throttle valve stage. The multi-stage flow control apparatus further includes a second throttle valve stage coupled to the second inlet. The second throttle valve stage includes a second throttle valve plug located within the second throttle valve stage. The second throttle valve plug is configured to control the amount of airflow through the second throttle valve stage by modulating the distance between the second throttle valve plug and faces of the second throttle valve stage. In addition, the multi-stage flow control apparatus includes a floating plunger stage coupled to the throttle valve stage.
    • 提供了一种在半导体衬底的处理期间使用的多级流量控制装置。 多级流量控制装置包括第一入口和第二入口,出口以及联接到第一入口的第一节流阀级。 第一节流阀级包括位于第一节流阀级内的第一节流阀塞。 第一节流阀塞构造成通过调节第一节流阀塞与第一节流阀级的面之间的距离来控制通过第一节流阀级的气流量。 多级流量控制装置还包括联接到第二入口的第二节流阀级。 第二节流阀级包括位于第二节流阀级内的第二节流阀塞。 第二节流阀塞构造成通过调节第二节流阀塞与第二节流阀级的面之间的距离来控制通过第二节流阀级的气流量。 此外,多级流量控制装置包括联接到节流阀级的浮动柱塞级。