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    • 7. 发明申请
    • Chip Inductor With Frequency Dependent Inductance
    • 具有频率依赖电感的片式电感器
    • US20100237464A1
    • 2010-09-23
    • US12632030
    • 2009-12-07
    • Hanyi DingWayne H. Woods, JR.
    • Hanyi DingWayne H. Woods, JR.
    • H01L27/06G06F17/50
    • H01L28/10G06F17/5068G06F17/5077H01L21/31053H01L21/76808H01L21/76826H01L23/5223H01L23/5227H01L27/08H01L29/432H01L2924/0002H01L2924/3011H01L2924/00
    • A set of metal line structures including a signal transmission metal line and a capacitively-grounded inductively-signal-coupled metal line is embedded in a dielectric material layer. A capacitor is serially connected between the capacitively-grounded inductively-signal-coupled metal line and a local electrical ground, which may be on the input side or on the output side. The set of metal line structures and the capacitor collective provide a frequency dependent inductor. The Q factor of the frequency dependent inductor has multiple peaks that enable the operation of the frequency dependent inductor at multiple frequencies. Multiple capacitively-grounded inductively-signal-coupled metal lines may be provided in the frequency-dependent inductor, each of which is connected to the local electrical ground through a capacitor. By selecting different capacitance values for the capacitors, multiple values of the Q-factor may be obtained in the frequency dependent inductor at different signal frequencies.
    • 包括信号传输金属线和电容接地感应信号耦合金属线的一组金属线结构被嵌入在电介质材料层中。 电容器串联连接在电容接地的感应信号耦合金属线路和可能在输入侧或输出侧的局部电接地之间。 金属线结构和电容集合提供了一个频率相关的电感。 频率依赖电感器的Q因子具有多个峰值,使得能够在多个频率下操作频率相关的电感器。 可以在频率相关电感器中提供多个电容耦合的感应信号耦合金属线路,每个电路通过电容器连接到本地电接地。 通过选择电容器的不同电容值,可以在不同信号频率的频率相关电感器中获得Q因子的多个值。
    • 9. 发明申请
    • ON-CHIP RADIAL CAVITY POWER DIVIDER/COMBINER
    • 片上径向辐射功率分配器/组合器
    • US20130193584A1
    • 2013-08-01
    • US13358792
    • 2012-01-26
    • Hanyi DingPinping SunGuoan WangWayne H. Woods, JR.
    • Hanyi DingPinping SunGuoan WangWayne H. Woods, JR.
    • H01L23/48H01L21/768
    • H01L23/481H01L23/66H01L2224/16225H01L2924/1305H01L2924/15311H01L2924/00
    • Disclosed is a chip with a power divider/combiner, a module incorporating the chip and associated methods. The divider/combiner comprises first and second metal layers on opposite sides of a substrate. Interconnects extend through the substrate and comprise: a first interconnect, second interconnects annularly arranged about the first interconnect and third interconnects annularly arranged about the second interconnects. Each interconnect comprises one or more through silicon vias lined/filled with a conductor. For a power divider, an opening in the first metal layer at the first interconnect comprises an input port for receiving power and openings in the first or second metal layer at the second interconnects comprise output ports for applying power to other devices. For a power combiner, openings in the first or second metal layer at the second interconnects comprise the input ports and an opening in the first metal layer at the first interconnect comprises an output port.
    • 公开了具有功率分配器/组合器的芯片,包括芯片的模块和相关联的方法。 分隔器/组合器包括在衬底的相对侧上的第一和第二金属层。 互连件延伸穿过衬底并且包括:第一互连,围绕第一互连环形布置的第二互连和围绕第二互连环形布置的第三互连。 每个互连包括一个或多个内衬/填充有导体的通孔硅通孔。 对于功率分配器,第一互连处的第一金属层中的开口包括用于接收功率的输入端口,并且在第二互连处的第一或第二金属层中的开口包括用于向其它器件施加电力的输出端口。 对于功率组合器,在第二互连处的第一或第二金属层中的开口包括输入端口,并且在第一互连处的第一金属层中的开口包括输出端口。