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    • 5. 发明申请
    • SPEED BINNING FOR DYNAMIC AND ADAPTIVE POWER CONTROL
    • 用于动态和自适应功率控制的速度波动
    • US20130113514A1
    • 2013-05-09
    • US13288269
    • 2011-11-03
    • Theodoros E. AnemikosJeanne P. BickfordNazmul HabibSusan K. Lichtensteiger
    • Theodoros E. AnemikosJeanne P. BickfordNazmul HabibSusan K. Lichtensteiger
    • H03K19/00G06F17/50
    • H03K19/0013
    • A plurality of digital circuits are manufactured from an identical circuit design. A power controller is operatively connect to the digital circuits, and a non-volatile storage medium is operatively connected to the power controller. The digital circuits are classified into different voltage bins, and each of the voltage bins has a current leakage limit. Each of the digital circuits has been previously tested to operate within a corresponding current leakage limit of a corresponding voltage bin into which each of the digital circuits has been classified. The non-volatile storage medium stores boundaries of the voltage bins as speed-binning test data. The power controller controls power-supply signals applied differently for each of the digital circuits based on which bin each of the digital circuit has been classified and the speed-binning test data.
    • 由相同的电路设计制造多个数字电路。 功率控制器可操作地连接到数字电路,并且非易失性存储介质可操作地连接到功率控制器。 数字电路分为不同的电压箱,每个电压箱都有漏电极限。 已经对每个数字电路进行了测试,以在对应的电压仓的相应的电流泄漏极限内运行,每个数字电路已被分类到该对应的电压仓。 非易失性存储介质存储电压仓的边界作为速度分级测试数据。 功率控制器控制基于每个数字电路已被分类的每个数字电路不同地施加的电源信号和速度合并测试数据。
    • 6. 发明授权
    • Speed binning for dynamic and adaptive power control
    • 用于动态和自适应功率控制的速度分组
    • US08421495B1
    • 2013-04-16
    • US13288269
    • 2011-11-03
    • Theodoros E. AnemikosJeanne P. BickfordNazmul HabibSusan K. Lichtensteiger
    • Theodoros E. AnemikosJeanne P. BickfordNazmul HabibSusan K. Lichtensteiger
    • H03K19/003
    • H03K19/0013
    • A plurality of digital circuits are manufactured from an identical circuit design. A power controller is operatively connect to the digital circuits, and a non-volatile storage medium is operatively connected to the power controller. The digital circuits are classified into different voltage bins, and each of the voltage bins has a current leakage limit. Each of the digital circuits has been previously tested to operate within a corresponding current leakage limit of a corresponding voltage bin into which each of the digital circuits has been classified. The non-volatile storage medium stores boundaries of the voltage bins as speed-binning test data. The power controller controls power-supply signals applied differently for each of the digital circuits based on which bin each of the digital circuit has been classified and the speed-binning test data.
    • 由相同的电路设计制造多个数字电路。 功率控制器可操作地连接到数字电路,并且非易失性存储介质可操作地连接到功率控制器。 数字电路分为不同的电压箱,每个电压箱都有漏电极限。 已经对每个数字电路进行了测试,以在对应的电压仓的相应的电流泄漏极限内运行,每个数字电路已被分类到该对应的电压仓。 非易失性存储介质存储电压仓的边界作为速度分级测试数据。 功率控制器控制基于每个数字电路已被分类的每个数字电路不同地施加的电源信号和速度合并测试数据。
    • 9. 发明授权
    • Method and structure for multi-core chip product test and selective voltage binning disposition
    • 多核芯片产品测试和选择性电压组合配置的方法和结构
    • US09557378B2
    • 2017-01-31
    • US13553986
    • 2012-07-20
    • Jeanne P. BickfordVikram IyengarRahul K. NadkarniPascal A. Nsame
    • Jeanne P. BickfordVikram IyengarRahul K. NadkarniPascal A. Nsame
    • H01L21/66G01R31/02G06F19/00G01R31/317G06F1/32
    • G01R31/31718G01R31/31725G06F1/32
    • Operating speeds of integrated circuit devices are tested to establish maximum and minimum frequency at maximum and minimum voltage. The devices are sorted into relatively-slow and relatively-fast devices to classify the devices into different voltage bins. A bin-specific voltage limit is established for each of the voltage bins needed for core performance at system use conditions. The bin-specific voltage limit is compared to core minimum chip-level functionality voltage at system maximum and minimum frequency specifications. The method correlates system design evaluation of design maximum and minimum frequency at design maximum and minimum voltage conditions with evaluation of tested maximum and minimum frequency at tested maximum and minimum voltage conditions. A chip-specific functionality voltage limit is established for the device. Initial system voltage for all devices from a voltage bin is set at a greater of the bin-specific voltage limit and the chip-specific functionality voltage limit consistent with the evaluation conditions.
    • 测试集成电路器件的工作速度,以在最大和最小电压下建立最大和最小频率。 将器件分类为相对较慢且相对较快的器件,以将器件分类到不同的电压仓。 对于在系统使用条件下核心性能所需的每个电压箱,建立了一个特定于特定电压限制。 特定于箱体的电压限制与系统最大和最小频率规格下的核心最小芯片级功能电压进行比较。 该方法在设计最大和最小电压条件下将设计最大和最小频率的系统设计评估与测试的最大和最小电压条件下的最大和最小频率进行了评估。 为器件建立芯片专用功能电压限制。 来自电压仓的所有器件的初始系统电压设置在特定于器件的电压限制和芯片专用功能电压限制的更大值与评估条件一致。