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1. 发明申请

US20120092032A1 DEVICE FOR CHARACTERISING ELECTRIC OR ELECTRONIC COMPONENTS 审中-公开
标题翻译：用于表征电子或电子元件的装置
公开(公告)号：US20120092032A1
公开(公告)日：2012-04-19
申请号：US13142007
申请日：2009-12-22
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Laurianne Nougaret , Gilles Dambrine , Henri Happy
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Laurianne Nougaret , Gilles Dambrine , Henri Happy
IPC分类号： G01R27/08
CPC分类号： G01R27/28 , G01R35/005
摘要： The invention relates to an integrated device (PM) for characterising electric or electronic components (DUT), in particular nanometric ones, comprising a substantially insulating substrate (S) on which are provided four conducting pads (P1, P2, P3, P4), at least three resistive pads (R1, R3, R4) connecting said pads together, and a transmission line (CPW) including a signal conductor (Cc) and at least one ground conductor (CL1, CL2), wherein: said resistive pads are arranged so as to connect a first conducting pad to a second and a fourth conducting pad, and to connect said fourth conducting pad to a third conducting pad; the signal conductor of the transmission line is connected to the first conducting pad; and the ground conductor of the transmission line is connected to the third pad.
摘要翻译：本发明涉及一种用于表征电子或电子部件（DUT），特别是纳米电子元件（DUT）的集成器件（PM），其包括基本绝缘的衬底（S），四个导电焊盘（P1，P2，P3，P4）将所述焊盘连接在一起的至少三个电阻焊盘（R1，R3，R4）和包括信号导体（Cc）和至少一个接地导体（CL1，CL2）的传输线（CPW），其中：所述电阻焊盘被布置以将第一导电焊盘连接到第二和第四导电焊盘，并将所述第四导电焊盘连接到第三导电焊盘; 传输线的信号导体连接到第一导电焊盘; 并且传输线的接地导体连接到第三焊盘。

2. 发明授权

US07439562B2 Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it 失效
标题翻译：用于修饰纳米管或纳米线的至少一种电性质的纳米线和掺入其的晶体管的方法
公开(公告)号：US07439562B2
公开(公告)日：2008-10-21
申请号：US10552855
申请日：2003-04-22
申请人： Stéphane Auvray , Jean-Philippe Bourgoin , Vincent Derycke , Marcelo Goffman
发明人： Stéphane Auvray , Jean-Philippe Bourgoin , Vincent Derycke , Marcelo Goffman
IPC分类号： C01B31/02 , G01N27/12 , H01L51/40
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B2202/22 , G01N27/12 , G11C2213/17 , H01L51/002 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/746 , Y10S977/847 , Y10S977/938 , Y10S977/957
摘要： The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.
摘要翻译：本发明涉及一种用于修饰碳纳米管或纳米线的至少电子性质的方法，包括将所述纳米管或纳米线暴露于具有式（I）的酸，其中R 1，R 2 R 3和R 3在包含（H，F，Cl，Br，I）的基团中选自具有至少一个R 1，R 2， 2和R 3不同于H。纳米管或纳米线的至少一部分可以是场效应晶体管的沟道区。

3. 发明授权

US09502659B2 Carbon nanotube field effect transistor 有权
标题翻译：碳纳米管场效应晶体管
公开(公告)号：US09502659B2
公开(公告)日：2016-11-22
申请号：US11893673
申请日：2007-08-16
申请人： Jean-Philippe Bourgoin , Marcelo Goffman , Vincent Derycke , Nicolas Chimot
发明人： Jean-Philippe Bourgoin , Marcelo Goffman , Vincent Derycke , Nicolas Chimot
IPC分类号： H01L51/00 , B82Y10/00 , H01L51/05
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0003 , H01L51/0525 , H01L51/0545 , H01L51/0558
摘要： A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
摘要翻译：提供了一种基于纳米管的柔性场效应晶体管及其制造方法。根据本发明的场效应晶体管包括至少两个接触电极，分别是漏极和源极，连接到接触电极的导电区，所述区包括基本对准的多个单壁碳纳米管，栅电极用于控制在所述区域中循环的电流和其上沉积有接触和栅电极的柔性基板。导电区中的纳米管密度严格大于每微米10纳米管。

4. 发明授权

US07982251B2 Device for detecting/storing electromagnetic beams, method for making same, and use thereof and imager incorporating same 有权
标题翻译：用于检测/存储电磁束的装置，其制造方法及其用途以及结合其的成像器
公开(公告)号：US07982251B2
公开(公告)日：2011-07-19
申请号：US12282584
申请日：2007-03-13
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
IPC分类号： H01L31/10
CPC分类号： B82Y10/00 , H01L27/305 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/428 , Y02E10/549 , Y02P70/521 , Y10S977/834 , Y10S977/938 , Y10S977/954
摘要： The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ∈, which satisfy ∈r>0.2 nm*1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
摘要翻译：本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极。所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ∈，其满足∈r> 0.2nm * 1，使得曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

5. 发明申请

US20070085155A1 Optically-configurable nanotube or nanowire semiconductor device 有权
标题翻译：光学可配置纳米管或纳米线半导体器件
公开(公告)号：US20070085155A1
公开(公告)日：2007-04-19
申请号：US11185153
申请日：2005-07-20
申请人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
发明人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
IPC分类号： H01L29/82
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/02 , G11C13/025 , G11C13/04 , H01L51/0048 , H01L51/0545 , H01L51/428 , Y02E10/549 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
摘要翻译：本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

6. 发明授权

US07323730B2 Optically-configurable nanotube or nanowire semiconductor device 有权
标题翻译：光学可配置纳米管或纳米线半导体器件
公开(公告)号：US07323730B2
公开(公告)日：2008-01-29
申请号：US11185153
申请日：2005-07-20
申请人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
发明人： Julien Borghetti , Jean-Philippe Bourgoin , Pascale Mordant , Vincent Derycke , Arianna Filoramo , Marcelo Goffman
IPC分类号： H01L31/062
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/02 , G11C13/025 , G11C13/04 , H01L51/0048 , H01L51/0545 , H01L51/428 , Y02E10/549 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention relates to a semiconductor device comprising at least two electrodes and at least one nanotube or nanowire, in particular a carbon nanotube or nanowire, the device including at least one semiconductive nanotube or nanowire having at least one region that is covered at least in part by at least one layer of molecules or nanocrystals of at least one photosensitive material, an electrical connection between said two electrodes being made by at least one nanotube, namely said semiconductive nanotube or nanowire and optionally by at least one other nanotube or nanowire.
摘要翻译：本发明涉及包括至少两个电极和至少一个纳米管或纳米线，特别是碳纳米管或纳米线的半导体器件，该器件包括至少一个半导体纳米管或纳米线，该至少一个半导体纳米管或至少一个区域至少部分被覆盖通过至少一层分子或至少一种感光材料的纳米晶体，所述两个电极之间的电连接由至少一个纳米管，即所述半导体纳米管或纳米线，以及任选地由至少一个其它纳米管或纳米线制成。

7. 发明申请

US20090179240A1 DEVICE FOR DETECTING/STORING ELECTROMAGNETIC BEAMS, METHOD FOR MAKING SAME, AND USE THEREOF AND IMAGER INCORPORATING SAME 有权
标题翻译：用于检测/存储电磁波的装置，制造它们的方法及其使用方法和包含它们的成像器
公开(公告)号：US20090179240A1
公开(公告)日：2009-07-16
申请号：US12282584
申请日：2007-03-13
申请人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
发明人： Jean-Philippe Bourgoin , Vincent Derycke , Julien Borghetti
IPC分类号： H01L31/112 , H01L21/28
CPC分类号： B82Y10/00 , H01L27/305 , H01L51/0036 , H01L51/0048 , H01L51/0545 , H01L51/0562 , H01L51/428 , Y02E10/549 , Y02P70/521 , Y10S977/834 , Y10S977/938 , Y10S977/954
摘要： The invention concerns a device for detecting and storing electromagnetic beams, an imager incorporating same, a method for making said device and use thereof. The inventive device comprises a field-effect phototransistor including: two source and drain contact electrodes, an electrical conduction unit which is connected to the two contact electrodes and which is coated with a photosensitive polymeric coating capable of absorbing the beams, of detecting, of generating in response the loads detected by said unit and of storing said loads, and a gate electrode which is capable of controlling the electric current in the unit as well as spatially distributing the loads in said coating and which is separated from said unit by a gate dielectric. Said device is configured such that the conduction unit comprises at least one semiconductive nanotube or nanowire capable of supplying an electric signal representing a modification of the conductivity of the phototransistor having been exposed to a beam, and that the gate dielectric has a thickness and a permittivity ε, which satisfy εr>0.2 nm* 1, so that the conductivity after exposition may be electrically reset in a reduced time and that the device forms at least one imaging pixel.
摘要翻译：本发明涉及一种用于检测和存储电磁波束的装置，一种包含其的成像器件，一种制造该装置的方法及其用途。本发明的器件包括场效应晶体管，其包括：两个源极和漏极接触电极，导电单元，其连接到两个接触电极并且涂覆有能够吸收光束的光敏聚合物涂层，以检测产生响应于由所述单元检测到的负载和存储所述负载的负载，以及能够控制所述单元中的电流以及空间分布所述涂层中的负载并且通过栅极电介质与所述单元分离的栅电极。所述器件被配置为使得导电单元包括至少一个能够提供表示已经暴露于光束的光电晶体管的导电性的变化的电信号的半导体纳米管或纳米线，并且栅极电介质具有厚度和介电常数 ε，其满足epsilon> 0.2nm * 1，使得在曝光后的电导率可以在减少的时间内电复位，并且器件形成至少一个成像像素。

8. 发明申请

US20080296563A1 Carbon nanotube field effect transistor 有权
标题翻译：碳纳米管场效应晶体管
公开(公告)号：US20080296563A1
公开(公告)日：2008-12-04
申请号：US11893673
申请日：2007-08-16
申请人： Jean-Philippe Bourgoin , Marcelo Goffman , Vincent Derycke , Nicolas Chimot
发明人： Jean-Philippe Bourgoin , Marcelo Goffman , Vincent Derycke , Nicolas Chimot
IPC分类号： H01L51/30 , H01L51/40 , H01L51/48
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0003 , H01L51/0525 , H01L51/0545 , H01L51/0558
摘要： A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.
摘要翻译：提供了一种基于纳米管的柔性场效应晶体管及其制造方法。根据本发明的场效应晶体管包括至少两个接触电极，分别是漏极和源极，连接到接触电极的导电区，所述区包括基本对准的多个单壁碳纳米管，栅电极用于控制在所述区域中循环的电流和其上沉积有接触和栅电极的柔性基板。导电区中的纳米管密度严格大于每微米10纳米管。

9. 发明申请

US20070056063A1 Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it 失效
标题翻译：用于修饰纳米管或纳米线的至少一种电性质的纳米线和掺入其的晶体管的方法
公开(公告)号：US20070056063A1
公开(公告)日：2007-03-08
申请号：US10552855
申请日：2003-04-22
申请人： Stephane Auvray , Jean-Philippe Bourgoin , Vincent Derycke , Marcelo Goffman
发明人： Stephane Auvray , Jean-Philippe Bourgoin , Vincent Derycke , Marcelo Goffman
IPC分类号： D01F9/12
CPC分类号： G11C13/025 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/168 , C01B2202/22 , G01N27/12 , G11C2213/17 , H01L51/002 , H01L51/0048 , H01L51/0541 , H01L51/0545 , Y10S977/746 , Y10S977/847 , Y10S977/938 , Y10S977/957
摘要： The present invention concerns a method for modyfing at least an electronic property of a carbon nanotube or nanowire comprising exposing said nanotube or nanowire to an acid having the formula (I) wherein R1, R2 and R3 are chosen in the group comprising (H, F, Cl, Br, I) with at least one of R1, R2 and R3 being different from H. At least part of the nanotube or nanowire may be a channel region of a field effect transistor.
摘要翻译：本发明涉及一种用于修饰碳纳米管或纳米线的至少电子性质的方法，包括将所述纳米管或纳米线暴露于具有式（I）的酸，其中R 1，R 2 R 3和R 3在包含（H，F，Cl，Br，I）的基团中选自具有至少一个R 1，R 2， 2和R 3不同于H。纳米管或纳米线的至少一部分可以是场效应晶体管的沟道区。

10. 发明授权

US08394460B2 Method for mask-free localized organic grafting on conductive or semiconductive portions of composite surfaces 有权
标题翻译：在复合表面的导电或半导体部分上进行无掩模的局部有机接枝的方法
公开(公告)号：US08394460B2
公开(公告)日：2013-03-12
申请号：US10614516
申请日：2003-07-08
申请人： Christophe Bureau , Serge Palacin , Jean-Philippe Bourgoin , Sami Ameur , Julienne Charlier
发明人： Christophe Bureau , Serge Palacin , Jean-Philippe Bourgoin , Sami Ameur , Julienne Charlier
IPC分类号： B05D1/04 , B05D3/02
CPC分类号： C09D5/4476 , B05D1/007 , B05D1/18
摘要： A process for mask-free localized grafting of organic molecules capable of being electrically activated, onto a composite surface comprising conductive and/or semiconductive portions, by placing said organic molecules in contact with said composite surface, in which said grafting is performed electrochemically in a single step on chosen, defined areas of said conductive and/or semiconductive portions, said areas being brought to a potential higher than or equal to a threshold electrical potential determined relative to a reference electrode, said threshold electrical potential being the potential above which grafting of said organic molecules takes place.
摘要翻译：通过将所述有机分子与所述复合表面接触而将能够电激活的有机分子的无掩模局部接枝到包含导电和/或半导体部分的复合表面上的方法，其中所述接枝在电化学在所述导电和/或半导体部分的选定的限定区域上的单步骤，所述区域被置于高于或等于相对于参考电极确定的阈值电位的电位，所述阈值电势是其上表示有机分子发生。

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