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1. 发明授权

US09147022B2 Method for calculating parameter values of thin-film transistor and apparatus for performing the method 有权
标题翻译：用于计算薄膜晶体管的参数值的方法和用于执行该方法的装置
公开(公告)号：US09147022B2
公开(公告)日：2015-09-29
申请号：US13481579
申请日：2012-05-25
申请人： Je-Hun Lee , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park , Jae-Woo Park , Dae-Hwan Kim , Sung-Chul Kim , Yong-Woo Jeon
发明人： Je-Hun Lee , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park , Jae-Woo Park , Dae-Hwan Kim , Sung-Chul Kim , Yong-Woo Jeon
IPC分类号： G06F7/60 , G06F17/10 , G06F17/50
CPC分类号： G06F17/5036
摘要： A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.
摘要翻译：用于计算TFT的参数值的方法包括使用TFT的非晶半导体的带隙中的整个能带上的状态密度函数来计算一组模拟电流 - 电压（I-V）值。所述方法还包括将所述一组模拟I-V值与所述TFT的测量I-V值的集合进行比较，以确定所述TFT的参数的值。该方法还可以包括使用根据频率测量的TFT的一组静电电容电压（C-V）值来计算受主状态密度函数gA的值。该方法还可以包括在带隙中的整个能带上确定施主状态密度函数gD的值和接口状态密度函数Dit的值。

2. 发明授权

US08841663B2 Oxide semiconductor thin-film transistor 有权
标题翻译：氧化物半导体薄膜晶体管
公开(公告)号：US08841663B2
公开(公告)日：2014-09-23
申请号：US13080413
申请日：2011-04-05
申请人： Je-Hun Lee , Jae-Woo Park , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park
发明人： Je-Hun Lee , Jae-Woo Park , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/45
CPC分类号： H01L29/45 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin-film transistor includes a gate electrode, a source electrode, a drain electrode, a gate insulation layer and an oxide semiconductor pattern. The source and drain electrodes include a first metal element with a first oxide formation free energy. The oxide semiconductor pattern has a first surface making contact with the gate insulation layer and a second surface making contact with the source and drain electrodes to be positioned at an opposite side of the first surface. The oxide semiconductor pattern includes an added element having a second oxide formation free energy having an absolute value greater than or equal to an absolute value of the first oxide formation free energy, wherein an amount of the added element included in a portion near the first surface is zero or smaller than an amount of the added element included in a portion near the second surface.
摘要翻译：薄膜晶体管包括栅电极，源电极，漏电极，栅极绝缘层和氧化物半导体图案。源极和漏极包括具有第一氧化物形成自由能的第一金属元件。氧化物半导体图案具有与栅极绝缘层接触的第一表面和与源极和漏极电极接触以与第一表面相对的第二表面。氧化物半导体图案包括具有绝对值大于或等于第一氧化物形成自由能的绝对值的第二氧化物形成自由能的添加元素，其中包括在第一表面附近的部分中的添加元素的量为零或小于包含在靠近第二表面的部分中的添加元素的量。

3. 发明授权

US08492770B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08492770B2
公开(公告)日：2013-07-23
申请号：US13035054
申请日：2011-02-25
申请人： Jae-Woo Park , Je-Hun Lee , Seong-Jin Lee , Yeon-Hong Kim
发明人： Jae-Woo Park , Je-Hun Lee , Seong-Jin Lee , Yeon-Hong Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/04 , H01L29/786
摘要： A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm2/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.
摘要翻译：薄膜晶体管包括形成在基板上的栅极电极，与栅电极重叠的半导体图案，与半导体图案的第一端重叠的源电极和与半导体图案的第二端重叠并分开的漏电极源极电极。半导体图案包括包含IIB元素和VIA元素或包含IIIA元素和VA元素并且具有不小于1.0cm 2 / Vs的电子迁移率的无定形多元素化合物和非晶相，其中VI 一个元素排除氧气。因此，可以提高薄膜晶体管的驱动特性。

4. 发明申请

US20110215322A1 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20110215322A1
公开(公告)日：2011-09-08
申请号：US13035054
申请日：2011-02-25
申请人： Jae-Woo Park , Je-Hun Lee , Seong-Jin Yeon , Yeon-Hong Kim
发明人： Jae-Woo Park , Je-Hun Lee , Seong-Jin Yeon , Yeon-Hong Kim
IPC分类号： H01L29/786 , H01L29/04 , H01L21/336
CPC分类号： H01L29/04 , H01L29/786
摘要： A thin film transistor includes a gate electrode formed on a substrate, a semiconductor pattern overlapped with the gate electrode, a source electrode overlapped with a first end of the semiconductor pattern and a drain electrode overlapped with a second end of the semiconductor pattern and spaced apart from the source electrode. The semiconductor pattern includes an amorphous multi-elements compound including a II B element and a VI A element or including a III A element and a V A element and having an electron mobility no less than 1.0 cm2/Vs and an amorphous phase, wherein the VI A element excludes oxygen. Thus, a driving characteristic of the thin film transistor may be improved.
摘要翻译：薄膜晶体管包括形成在基板上的栅极电极，与栅电极重叠的半导体图案，与半导体图案的第一端重叠的源电极和与半导体图案的第二端重叠并分开的漏极电极源极电极。半导体图案包括包含IIB元素和VIA元素或包含IIIA元素和VA元素并且具有不小于1.0cm 2 / Vs的电子迁移率的无定形多元素化合物和非晶相，其中VI 一个元素排除氧气。因此，可以提高薄膜晶体管的驱动特性。

5. 发明授权

US08615023B2 Apparatus and method for transmitting/receiving data in communication system 有权
标题翻译：在通信系统中发送/接收数据的装置和方法
公开(公告)号：US08615023B2
公开(公告)日：2013-12-24
申请号：US13283497
申请日：2011-10-27
申请人： Jong-Ee Oh , Sok-Kyu Lee , Min-Ho Cheong , Jee-Yon Choi , Jae-Woo Park , Hyun-Kyu Chung
发明人： Jong-Ee Oh , Sok-Kyu Lee , Min-Ho Cheong , Jee-Yon Choi , Jae-Woo Park , Hyun-Kyu Chung
IPC分类号： H04J3/24
CPC分类号： H04L1/0057 , H03M13/1102 , H03M13/23 , H03M13/6527 , H04L1/0068 , H04L1/0075 , H04L1/0083
摘要： Disclosed is an apparatus and method for transmitting/receiving data using a low-density parity check (LDPC) coding scheme in a communication system. The method includes generating a multi-user data packet containing data to be transmitted to a plurality of users, encoding the multi-user data packet as a BCC and an LDPC code, and transmitting the encoded multi-user data packet to the plurality of users. In the method, the encoding of the multi-user data packet encodes MPDU subframes corresponding to each of the plurality of users in the multi-user data packet as the LDPC code, and calculates information on a length in LDPC encoding, corresponding to the encoding of the multi-user data packet as the LDPC code.
摘要翻译：公开了一种在通信系统中使用低密度奇偶校验（LDPC）编码方案发送/接收数据的装置和方法。该方法包括生成包含要发送给多个用户的数据的多用户数据分组，将多用户数据分组编码为BCC和LDPC码，并将编码的多用户数据分组发送给多个用户。在该方法中，多用户数据分组的编码将与多用户数据分组中的多个用户中的每一个对应的MPDU子帧编码为LDPC码，并且计算与LDPC编码相对应的LDPC编码长度的信息作为LDPC码的多用户数据分组。

6. 发明申请

US20080251221A1 Blind Type Curtain 审中-公开
标题翻译：盲型窗帘
公开(公告)号：US20080251221A1
公开(公告)日：2008-10-16
申请号：US12066415
申请日：2006-09-13
申请人： Jae-Woo Park
发明人： Jae-Woo Park
IPC分类号： A47C23/00 , A47C23/02
CPC分类号： A47H23/02 , A47H2023/003 , E06B9/264
摘要： The present invention relates to a blind type curtain, and more specifically to a blind type curtain, obtained by forming several blind unit pieces formed on rear surface of the textile curtain at regular interval, such that the functions such as light beam regulation, sight-blocking, soundproofing, anti-cold, and anti-rat can be performed, and the function such as interior can be simultaneously performed, by which these functions are further magnified, of which the manufacture and handling is easy, used as a combined use of indoor and outdoor, and which provides no concern about noise and breakage. That is, a membrane shaped blind unit piece 2 is prepared by forming several blind unit pieces protrusively formed in a row direction at regular interval, preparing a connecting yarn on rear side of the blind unit piece, weaving the upper and lower end of the connecting yarn with the upper and lower end of a space of rear side of the blind unit piece to maintain the protrusion of the unit piece, and folding the lower end of the blind unit piece 2 forcibly.
摘要翻译：盲型帘幕技术领域本发明涉及一种盲型帘幕，更具体地涉及一种盲型帘幕，其通过以规则的间隔形成形成在纺织品窗帘的后表面上的若干个单元片而获得，使得诸如光束调节，可以进行阻隔，隔音，防冷和抗大鼠，并且可以同时执行诸如内部的功能，通过这些功能进一步放大，其制造和处理容易，用作组合使用室内和室外，不关心噪音和破损。也就是说，通过以规则的间隔形成沿行方向突出形成的多个盲单元件来制备膜形盲单元件2，在盲单元件的后侧准备连接纱线，编织连接的上下端纱线，其具有盲单元件的后侧的空间的上端和下端，以保持单元件的突起，并且强制地折叠盲单元件2的下端。

7. 发明申请

US20080237595A1 THIN FILM TRANSISTOR INCLUDING TITANIUM OXIDES AS ACTIVE LAYER AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：包括作为主动层的氧化钛的薄膜晶体管及其制造方法
公开(公告)号：US20080237595A1
公开(公告)日：2008-10-02
申请号：US12058399
申请日：2008-03-28
申请人： Jae-Woo Park , Seunghyup Yoo
发明人： Jae-Woo Park , Seunghyup Yoo
IPC分类号： H01L29/04 , H01L21/02
CPC分类号： H01L29/7869
摘要： Disclosed herein is a method of manufacturing a thin film transistor including titanium oxides as an active layer and the structure of the thin film transistor film manufactured using the method. The thin film transistor includes: a substrate; an active layer formed on the substrate using polycrystalline or amorphous titanium oxides; and an insulating layer formed on the active layer. Further, the method of manufacturing the thin film transistor includes: forming a substrate; forming an active layer on the substrate using polycrystalline or amorphous titanium oxides; and forming an insulating layer on the active layer. The present invention is advantageous in that the performance of the thin film transistor can be improved, the thin film transistor can be manufactured at low cost, harmful environmental problems can be solved, and the thin film transistor can be widely applied to various electronic apparatuses including, but not limited to, integrated drivers in active-matrix displays and transparent electronic devices.
摘要翻译：本发明公开了一种制造薄膜晶体管的方法，该薄膜晶体管包括钛氧化物作为有源层，以及使用该方法制造的薄膜晶体管膜的结构。薄膜晶体管包括：基板; 使用多晶或无定形钛氧化物在所述衬底上形成的有源层; 以及形成在有源层上的绝缘层。此外，制造薄膜晶体管的方法包括：形成衬底; 使用多晶或无定形钛氧化物在衬底上形成有源层; 以及在所述有源层上形成绝缘层。本发明的优点在于，可以提高薄膜晶体管的性能，可以以低成本制造薄膜晶体管，可以解决有害的环境问题，并且薄膜晶体管可以广泛地应用于各种电子设备，包括但不限于有源矩阵显示器和透明电子设备中的集成驱动器。

8. 发明授权

US09245966B2 Wiring, thin film transistor, thin film transistor panel and methods for manufacturing the same 有权
标题翻译：接线，薄膜晶体管，薄膜晶体管面板及其制造方法
公开(公告)号：US09245966B2
公开(公告)日：2016-01-26
申请号：US13242257
申请日：2011-09-23
申请人： Jae-Woo Park , Sung-Haeng Cho , Kyong-Sub Kim , Dong-Yeon Cho
发明人： Jae-Woo Park , Sung-Haeng Cho , Kyong-Sub Kim , Dong-Yeon Cho
IPC分类号： H01L29/49 , H01L29/45 , H01L29/786
CPC分类号： H01L29/45 , H01L29/458 , H01L29/78669 , H01L29/78678 , H01L29/7869
摘要： A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.
摘要翻译：薄膜晶体管包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的半导体，以及半导体上的间隔开的漏电极和源电极。漏电极和源电极中的每一个包括防止金属原子扩散的第一金属扩散防止层和第一金属扩散防止层上的第二金属扩散防止层。第一和第二金属扩散防止层中的至少一个包括柱状结构中的大致垂直于下层的方向的晶粒。第一金属扩散防止层的第一晶界和第二金属扩散防止层的第二晶界在垂直于半导体的方向上基本上不连续。

9. 发明申请

US20150163656A1 WIRELESS LOCAL AREA NETWORK SYSTEM BASED ON AN ACCESS POINT (AP) SUPPORTING WIRELESS TERMINAL ROAMING 审中-公开
标题翻译：基于接入点（AP）的无线本地区域网络系统支持无线终端漫游
公开(公告)号：US20150163656A1
公开(公告)日：2015-06-11
申请号：US14009227
申请日：2011-10-19
申请人： Hee-Jong Son , Han-Koon Nam , Sung-Man Park , Jae-Woo Park , Hyuk-Soo Jin
发明人： Hee-Jong Son , Han-Koon Nam , Sung-Man Park , Jae-Woo Park , Hyuk-Soo Jin
IPC分类号： H04W8/02
CPC分类号： H04L61/2521 , H04L61/2015 , H04L61/6022 , H04W8/26 , H04W84/12
摘要： A wireless local area network (WLAN) system is disclosed. The WLAN system includes a first access point (AP), and a second AP which has a same service set identifier (SSID) as that of the first AP, wherein the first AP and the second AP are configured to respectively perform a network address translation (NAT) and have a same virtual media access control (MAC) address. The WLAN system according to the present disclosure supports successful roaming between APs which belong to different networks regardless of the type of the wireless terminal.
摘要翻译：公开了一种无线局域网（WLAN）系统。 WLAN系统包括第一接入点（AP）和具有与第一AP相同的服务集标识符（SSID）的第二AP，其中，第一AP和第二AP被配置为分别执行网络地址转换（NAT）并具有相同的虚拟媒体访问控制（MAC）地址。根据本公开的WLAN系统支持属于不同网络的AP之间的成功漫游，而不管无线终端的类型如何。

10. 发明授权

US08934305B2 Nonvolatile memory device, method of operating the same and electronic device including the same 有权
标题翻译：非易失存储器件，其操作方法和包括其的电子器件
公开(公告)号：US08934305B2
公开(公告)日：2015-01-13
申请号：US13479467
申请日：2012-05-24
申请人： Jae-Woo Park , Jung-No Im
发明人： Jae-Woo Park , Jung-No Im
IPC分类号： G11C16/34 , G11C16/06 , G11C16/10 , G11C11/56 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483
摘要： A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.
摘要翻译：提供一种非易失性存储器件及其操作方法。该方法包括对多个存储器单元执行多个编程操作，每个存储器单元被编程为多个程序状态中的一个，对与多个程序状态中的每一个相关联的程序存储单元执行程序验证操作，该程序 - 验证操作包括：使用所选择的偏移量，基于与编程的存储器单元相关联的公共源极线的噪声电平来选择所述多个偏移中的一个，以选择第一验证电压和高于所述第一验证电压的第二验证电压验证电压，以及使用第一验证电压和第二验证电压来验证编程的存储器单元的编程状态。

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