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1. 发明申请

US20130016565A1 NONVOLATILE MEMORY DEVICE, METHOD OF OPERATING THE SAME AND ELECTRONIC DEVICE INCLUDING THE SAME 有权
标题翻译：非易失存储器件，其操作方法和包括其的电子器件
公开(公告)号：US20130016565A1
公开(公告)日：2013-01-17
申请号：US13479467
申请日：2012-05-24
申请人： Jae-Woo Park , Jung-No Im
发明人： Jae-Woo Park , Jung-No Im
IPC分类号： G11C16/06
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483
摘要： A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.
摘要翻译：提供一种非易失性存储器件及其操作方法。该方法包括对多个存储器单元执行多个编程操作，每个存储器单元被编程为多个程序状态中的一个，对与多个程序状态中的每一个相关联的程序存储单元执行程序验证操作，该程序 - 验证操作包括：使用所选择的偏移量，基于与编程的存储器单元相关联的公共源极线的噪声电平来选择所述多个偏移中的一个，以选择第一验证电压和高于所述第一验证电压的第二验证电压验证电压，以及使用第一验证电压和第二验证电压来验证编程的存储器单元的编程状态。

2. 发明授权

US08934305B2 Nonvolatile memory device, method of operating the same and electronic device including the same 有权
标题翻译：非易失存储器件，其操作方法和包括其的电子器件
公开(公告)号：US08934305B2
公开(公告)日：2015-01-13
申请号：US13479467
申请日：2012-05-24
申请人： Jae-Woo Park , Jung-No Im
发明人： Jae-Woo Park , Jung-No Im
IPC分类号： G11C16/34 , G11C16/06 , G11C16/10 , G11C11/56 , G11C16/04
CPC分类号： G11C16/3459 , G11C11/5628 , G11C16/0483
摘要： A nonvolatile memory device and a method of operating the same are provided. The method includes performing a plurality of program operations on a plurality of memory cells each to be programmed to one of a plurality of program states, performing a program-verify operation on programmed memory cells associated with each of the plurality of program states, the program-verify operation comprises, selecting one of the plurality of offsets based on a noise level of a common source line associated with a programmed memory cell, using the selected offset to select one of a first verify voltage and a second verify voltage higher than the first verify voltage, and verifying a program state of the programmed memory cell using the first verify voltage and the second verify voltage.
摘要翻译：提供一种非易失性存储器件及其操作方法。该方法包括对多个存储器单元执行多个编程操作，每个存储器单元被编程为多个程序状态中的一个，对与多个程序状态中的每一个相关联的程序存储单元执行程序验证操作，该程序 - 验证操作包括：使用所选择的偏移量，基于与编程的存储器单元相关联的公共源极线的噪声电平来选择所述多个偏移中的一个，以选择第一验证电压和高于所述第一验证电压的第二验证电压验证电压，以及使用第一验证电压和第二验证电压来验证编程的存储器单元的编程状态。

3. 发明授权

US08531887B2 Nonvolatile memory device and related programming method 有权
标题翻译：非易失性存储器件及相关编程方法
公开(公告)号：US08531887B2
公开(公告)日：2013-09-10
申请号：US13342312
申请日：2012-01-03
申请人： Jung-no Im , Jae-woo Park
发明人： Jung-no Im , Jae-woo Park
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3418 , G11C16/3454
摘要： A nonvolatile memory device programs a memory cell by performing a plurality of program loops each comprising a program operation and a program verifying operation. Where the program verifying operation in one program loop determines that the memory cell has been successfully programmed to a target state, a soft-programming operation is performed in a subsequent program loop to determine whether the memory cell has retained the target state, and if not, increases the threshold voltage of the memory cell.
摘要翻译：非易失性存储器件通过执行包括程序操作和程序验证操作的多个程序循环来对存储器单元进行编程。在一个程序循环中的程序验证操作确定存储器单元已被成功地编程到目标状态的情况下，在随后的程序循环中执行软编程操作以确定存储单元是否保持目标状态，如果不是，增加存储单元的阈值电压。

4. 发明申请

US20120170374A1 NONVOLATILE MEMORY DEVICE AND RELATED PROGRAMMING METHOD 有权
标题翻译：非易失性存储器件及相关编程方法
公开(公告)号：US20120170374A1
公开(公告)日：2012-07-05
申请号：US13342312
申请日：2012-01-03
申请人： Jung-no Im , Jae-woo Park
发明人： Jung-no Im , Jae-woo Park
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/3418 , G11C16/3454
摘要： A nonvolatile memory device programs a memory cell by performing a plurality of program loops each comprising a program operation and a program verifying operation. Where the program verifying operation in one program loop determines that the memory cell has been successfully programmed to a target state, a soft-programming operation is performed in a subsequent program loop to determine whether the memory cell has retained the target state, and if not, increases the threshold voltage of the memory cell.
摘要翻译：非易失性存储器件通过执行包括程序操作和程序验证操作的多个程序循环来对存储器单元进行编程。在一个程序循环中的程序验证操作确定存储器单元已被成功地编程到目标状态的情况下，在随后的程序循环中执行软编程操作以确定存储单元是否保持目标状态，如果不是，增加存储单元的阈值电压。

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