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    • 3. 发明申请
    • DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
    • 显示基板及其制造方法
    • US20110254011A1
    • 2011-10-20
    • US12902761
    • 2010-10-12
    • Young-Min KIMBo-Sung KIMSeon-Pil JANGSeung-Hwan CHOKang-Moon JO
    • Young-Min KIMBo-Sung KIMSeon-Pil JANGSeung-Hwan CHOKang-Moon JO
    • H01L29/04H01L21/84
    • H01L29/78606H01L27/1214H01L27/124H01L27/1288
    • A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.
    • 显示基板包括栅极线,栅极绝缘层,数据线,开关元件,保护绝缘层,栅极焊盘部分和数据焊盘部分。 栅极绝缘层设置在栅极线上。 开关元件连接到栅极线和数据线。 保护绝缘层设置在开关元件上。 栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极 孔通过保护层形成。 数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。
    • 5. 发明申请
    • LlQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    • 液晶显示器及其制造方法
    • US20120184058A1
    • 2012-07-19
    • US13430280
    • 2012-03-26
    • Tae-Young CHOIBo-Sung KIMYoung-Min KIM
    • Tae-Young CHOIBo-Sung KIMYoung-Min KIM
    • H01L33/50
    • H01L27/1225G02F1/136209G02F1/13624G02F2001/136222H01L27/1248H01L27/1288
    • The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.
    • 本发明提供了一种在液晶显示器中具有高性能的薄膜晶体管,以及根据本发明的示例性实施例的液晶显示器的制造方法,包括:在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层,栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。
    • 8. 发明申请
    • FLAT PANEL DISPLAY AND MANUFACTURING METHOD OF FLAT PANEL DISPLAY
    • 平板显示器的平板显示和制造方法
    • US20090111211A1
    • 2009-04-30
    • US12325951
    • 2008-12-01
    • Bo-Sung KIMJoon-hak OhYoag-uk Lee
    • Bo-Sung KIMJoon-hak OhYoag-uk Lee
    • H01L51/40H01J9/00H01L21/70
    • H01L51/0533
    • The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.
    • 本公开涉及包括绝缘基板的显示装置; 绝缘基板上的源电极和漏极,并由沟道区分离; 有机半导体层,其形成在所述沟道区域中以及所述源电极和所述漏电极的至少一部分的至少一部分上; 以及具有设置在有机半导体层和源电极之间的第一部分的自组装单层和设置在有机半导体层和漏电极之间的第二部分,以减小电极和有机半导体层之间的接触电阻。 因此,本发明的实施例提供了一种显示装置,其包括增强其性能的TFT。
    • 10. 发明申请
    • ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    • 有机薄膜晶体管阵列及其制造方法
    • US20110248255A1
    • 2011-10-13
    • US13164906
    • 2011-06-21
    • Bo-Sung KIMWoo-Jae LEEMin-Seong RYU
    • Bo-Sung KIMWoo-Jae LEEMin-Seong RYU
    • H01L27/28
    • H01L27/283H01L27/3274H01L51/0545H01L51/10H01L51/5237
    • A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.
    • 提供一种制造薄膜晶体管阵列面板的方法,该方法包括在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层上形成数据线和漏电极; 在数据线和漏电极之间的数据线,漏电极和栅极绝缘层的暴露部分形成有机半导体层; 形成完全覆盖有机半导体层的保护构件; 在保护层,数据线和漏电极上形成钝化层; 在所述钝化层中形成接触孔以露出所述漏电极的一部分; 以及在所述钝化层上形成像素电极,所述像素电极通过所述接触孔连接到所述漏电极。