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1. 发明申请

US20090326449A1 Control apparatus of catheter feeder 审中-公开
标题翻译：导管给料机控制装置
公开(公告)号：US20090326449A1
公开(公告)日：2009-12-31
申请号：US12285814
申请日：2008-10-15
申请人： Jaw-Lin Wang , Been-Der Yang , Chi-Lin Yang , Wei-Cheng Huang , Yao-Hung Wang , Tzu-Cheng Lin
发明人： Jaw-Lin Wang , Been-Der Yang , Chi-Lin Yang , Wei-Cheng Huang , Yao-Hung Wang , Tzu-Cheng Lin
IPC分类号： A61M25/092
CPC分类号： A61M25/09041
摘要： The invention is disclosed to a control apparatus of catheter feeder. It comprises two rotatable mechanisms and a transmittal device that can propel the guidewire into continuous motion comprising moving forward, moving backward, moving clockwise, and moving counter-clockwise. The invention comprises of a square frame and three gears that are meshed together and are referred to the first, second, and third gear, respectively. At the front of the third gear are the first and second sets of the idle wheels that can hold the guidewire tightly. The invention employs the mechanical gears to control movement of the guidewire.
摘要翻译：本发明公开了一种导管给料机的控制装置。它包括两个可旋转机构和一个可将导丝推进连续运动的传送装置，包括向前移动，向后移动，顺时针移动和逆时针方向移动。本发明包括一个方形框架和三个啮合在一起的齿轮，分别称为第一档，第二档和第三档。在第三档的前部是第一组和第二组可以保持导丝的空转轮。本发明采用机械齿轮来控制导丝的运动。

2. 发明申请

US20130023065A1 Apparatus and Methods for End Point Determination in Reactive Ion Etching 有权
标题翻译：反应离子蚀刻中终点测定的装置和方法
公开(公告)号：US20130023065A1
公开(公告)日：2013-01-24
申请号：US13189287
申请日：2011-07-22
申请人： Chien Rhone Wang , Tzu-Cheng Lin , Yu-Jen Cheng , Chih-Wei Lai , Hung-Pin Chang , Tsang-Jiuh Wu
发明人： Chien Rhone Wang , Tzu-Cheng Lin , Yu-Jen Cheng , Chih-Wei Lai , Hung-Pin Chang , Tsang-Jiuh Wu
IPC分类号： H01L21/66
CPC分类号： H01J37/32963
摘要： Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.
摘要翻译：执行终点确定的方法和装置。一种方法包括将晶片接收到用于进行RIE蚀刻的蚀刻工具室中; 开始RIE蚀刻以在晶片中形成通孔; 接收与RIE蚀刻工艺相关的蚀刻工具室的一个或多个物理参数的原位测量; 为腔室中的RIE蚀刻提供虚拟计量模型; 将接收到的原位测量值输入到腔室中的RIE蚀刻的虚拟测量模型; 执行虚拟计量模型以通过深度估计电流; 将经过深度的估计电流与目标深度进行比较; 并且当比较指示当前经过深度在目标深度的预定阈值内时; 输出停止信号。公开了一种用于该方法实施例的装置。

3. 发明授权

US08445296B2 Apparatus and methods for end point determination in reactive ion etching 有权
标题翻译：用于反应离子蚀刻终点测定的装置和方法
公开(公告)号：US08445296B2
公开(公告)日：2013-05-21
申请号：US13189287
申请日：2011-07-22
申请人： Chien Rhone Wang , Tzu-Cheng Lin , Yu-Jen Cheng , Chih-Wei Lai , Hung-Pin Chang , Tsang-Jiuh Wu
发明人： Chien Rhone Wang , Tzu-Cheng Lin , Yu-Jen Cheng , Chih-Wei Lai , Hung-Pin Chang , Tsang-Jiuh Wu
IPC分类号： H01L21/02
CPC分类号： H01J37/32963
摘要： Methods and apparatus for performing end point determination. A method includes receiving a wafer into an etch tool chamber for performing an RIE etch; beginning the RIE etch to form vias in the wafer; receiving in-situ measurements of one or more physical parameters of the etch tool chamber that are correlated to the RIE etch process; providing a virtual metrology model for the RIE etch in the chamber; inputting the received in-situ measurements to the virtual metrology model for the RIE etch in the chamber; executing the virtual metrology model to estimate the current via depth; comparing the estimated current via depth to a target depth; and when the comparing indicates the current via depth is within a predetermined threshold of the target depth; outputting a stop signal. An apparatus for use with the method embodiment is disclosed.
摘要翻译：执行终点确定的方法和装置。一种方法包括将晶片接收到用于进行RIE蚀刻的蚀刻工具室中; 开始RIE蚀刻以在晶片中形成通孔; 接收与RIE蚀刻工艺相关的蚀刻工具室的一个或多个物理参数的原位测量; 为腔室中的RIE蚀刻提供虚拟计量模型; 将接收到的原位测量值输入到腔室中的RIE蚀刻的虚拟测量模型; 执行虚拟计量模型以通过深度估计电流; 将经过深度的估计电流与目标深度进行比较; 并且当比较指示当前经过深度在目标深度的预定阈值内时; 输出停止信号。公开了一种用于该方法实施例的装置。

4. 发明授权

US08010212B2 Fuzzy control method for adjusting a semiconductor machine 有权
标题翻译：用于调整半导体机器的模糊控制方法
公开(公告)号：US08010212B2
公开(公告)日：2011-08-30
申请号：US12241568
申请日：2008-09-30
申请人： Yi Feng Lee , Tzu-Cheng Lin , Chun Chi Chen , Yun-Zong Tian
发明人： Yi Feng Lee , Tzu-Cheng Lin , Chun Chi Chen , Yun-Zong Tian
IPC分类号： G05B13/02
CPC分类号： G05B13/0275 , G06N99/005 , Y10S706/904
摘要： A method of fuzzy control for adjusting a semiconductor machine comprising: providing measurement values from first the “parameter of a pre-semiconductor manufacturing process”, second the “parameter of the semiconductor manufacturing process”, and third the “operation parameter of the semiconductor manufacturing process”; performing a fuzzy control to define two inputs and one output corresponding to the measurement values, wherein the difference between the first and third values, and the difference between the second and third values, forms the two inputs, then from the two inputs one target output is calculated by fuzzy inference; finally, determining if the target output is in or out of an acceptable range. Whereby the target output is the “machine control parameter of the semiconductor manufacturing process” and when within an acceptable range is used for adjusting the semiconductor machine.
摘要翻译：一种用于调整半导体机器的模糊控制方法，包括：首先从“半导体制造工艺的参数”提供测量值，第二个“半导体制造工艺的参数”，第三个“半导体制造的操作参数处理”; 执行模糊控制以定义对应于测量值的两个输入和一个输出，其中第一和第三值之间的差异以及第二和第三值之间的差异形成两个输入，然后从两个输入一个目标输出通过模糊推理计算; 最后，确定目标输出是否在可接受的范围之内。由此，目标输出是“半导体制造工序的机器控制参数”，并且在可接受范围内用于调整半导体机器时。

5. 发明申请

US20130024019A1 APPARATUS AND METHODS FOR END POINT DETERMINATION IN SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：用于半导体处理中端点测定的装置和方法
公开(公告)号：US20130024019A1
公开(公告)日：2013-01-24
申请号：US13285679
申请日：2011-10-31
申请人： Chien Rhone Wang , Tzu-Cheng Lin , Yu-Jen Cheng , Chih-Wei Lai , Hung-Pin Chang , Tsang-Jiuh Wu
发明人： Chien Rhone Wang , Tzu-Cheng Lin , Yu-Jen Cheng , Chih-Wei Lai , Hung-Pin Chang , Tsang-Jiuh Wu
IPC分类号： G05B13/04
CPC分类号： G05B19/41875 , G05B2219/32201 , G05B2219/32205 , G05B2219/45031 , Y02P90/20 , Y02P90/22
摘要： Methods and apparatus for performing end point determination are disclosed. An embodiment includes an apparatus comprising a process tool and a programmable processor. The process tool has an output for signaling in-situ measurements of physical parameters during processing of a wafer in the process tool, and the process tool has an input for receiving a signal indicating a modification of a recipe for the processing. The programmable processor is for executing a virtual metrology model of the process tool to estimate an estimated characteristic of the wafer achieved during the processing. The estimated characteristic is based on the in-situ measurements and the virtual metrology model. The programmable processor has an output for transmitting the signal when the estimated characteristic exceeds a predetermined threshold based on a target characteristic.
摘要翻译：公开了用于执行终点确定的方法和装置。实施例包括一种包括处理工具和可编程处理器的装置。处理工具具有用于在处理工具中的晶片处理期间信号化物理参数的原位测量的输出，并且处理工具具有用于接收指示用于处理的配方的修改的信号的输入。可编程处理器用于执行处理工具的虚拟计量模型以估计在处理期间实现的晶片的估计特性。估计的特征是基于原位测量和虚拟计量模型。可编程处理器具有用于当估计特性基于目标特性超过预定阈值时发送信号的输出。

6. 发明申请

US20090197354A1 SYSTEM AND METHOD FOR MONITORING MANUFACTURING PROCESS 审中-公开
标题翻译：用于监测制造过程的系统和方法
公开(公告)号：US20090197354A1
公开(公告)日：2009-08-06
申请号：US12144488
申请日：2008-06-23
申请人： Tzu-Cheng Lin , Yun-Zong Tian , Chun-Chi Chen , Yi-Feng Lee
发明人： Tzu-Cheng Lin , Yun-Zong Tian , Chun-Chi Chen , Yi-Feng Lee
IPC分类号： H01L21/66 , G06T11/20
CPC分类号： G05B19/41875 , G05B2219/32196 , G05B2219/45031 , Y02P90/22
摘要： A system and method for monitoring a manufacturing process are provided. A wafer is provided. Process parameters of a manufacturing machine are in-situ measured and recorded if the wafer is processed in the manufacturing machine. A wafer measured value of the wafer is measured after the wafer has been processed. The process parameters are transformed into a process summary value. A two dimensional orthogonal chart with a first axis representing the wafer measured value and a second axis representing the process summary value is provided. The two dimensional orthogonal chart includes a close-loop control limit. A visualized point representing the wafer measured value and the process summary value is displayed on the two dimensional orthogonal chart.
摘要翻译：提供了一种用于监视制造过程的系统和方法。提供晶片。如果在制造机器中处理晶片，则原位测量和记录制造机器的工艺参数。在晶片处理后测量晶片的晶圆测量值。过程参数被转换为过程摘要值。提供具有表示晶片测量值的第一轴的二维正交图和表示处理总结值的第二轴。二维正交图包括闭环控制极限。表示晶圆测量值和过程总结值的可视化点显示在二维正交图上。

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