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1. 发明授权

US5999261A Split phase high performance, high frequency, high dynamic range interferometer 失效
标题翻译：分相高性能，高频，高动态范围干涉仪
公开(公告)号：US5999261A
公开(公告)日：1999-12-07
申请号：US113668
申请日：1998-07-10
申请人： Jason L. Pressesky , Yuh-Jen Cheng
发明人： Jason L. Pressesky , Yuh-Jen Cheng
IPC分类号： G01B9/02
CPC分类号： G01B9/0207 , G01B9/02011 , G01B9/02081 , G01B2290/45 , G01B2290/70
摘要： Processing two interference signals to reconstruct a target image includes splitting a laser beam into a reference beam and a measurement beam, and in turn splitting the reference beam into two sub-reference beams. A phase shift is introduced into one of the sub-reference beams, the phase shift being substantially 90 degrees. A measurement beam is reflected from a surface of a moving target, and split into two sub-measurement beams. A first respective sub-reference beam is combined with a first sub-measurement beam, and the second sub-reference beam is combined with the second sub-measurement beam, and the in phase and out of phase signals reconstruct the target surface. Adjustment of the split sub-reference beams is effected by Pockels cells to achieve the desired phase difference between the two sub-reference beams. The reconstructed motion of the target surface is effected with a selected frequency characteristic, spatial resolution and range characteristic.
摘要翻译：处理两个干扰信号以重建目标图像包括将激光束分成参考光束和测量光束，然后将参考光束分成两个子参考光束。相移被引入到一个子参考光束中，相移基本上为90度。测量光束从移动目标的表面反射，并分成两个子测量光束。第一相应的子参考光束与第一子测量光束组合，并且第二子参考光束与第二子测量光束组合，同相和异相信号重构目标表面。分裂子参考光束的调整由Pockels单元实现，以实现两个子参考光束之间的期望的相位差。目标表面的重建运动是用选定的频率特性，空间分辨率和范围特性来实现的。

2. 发明申请

US20100323506A1 Method for fabricating semiconductor substrates and semiconductor devices 有权
标题翻译：制造半导体衬底和半导体器件的方法
公开(公告)号：US20100323506A1
公开(公告)日：2010-12-23
申请号：US12489688
申请日：2009-06-23
申请人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-Chung Kuo
发明人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-Chung Kuo
IPC分类号： H01L21/205
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02551 , H01L21/02658 , H01L33/007
摘要： A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products.
摘要翻译：一种制造半导体层的方法，包括：a）在异质衬底上生长半导体层; b）在所述半导体层上形成至少一个开口，其中所述开口暴露所述半导体层和所述异质衬底之间的界面; 以及c）沿着所述半导体层和所述异质衬底之间的界面去除所述半导体固态材料的至少一部分。去除步骤c）优选通过选择性界面化学蚀刻来实现。半导体层可以用作用于制造各种电子和光电子器件和集成电路产品的衬底。

3. 发明授权

US06511702B1 Apparatus and method to control the molecular weight distribution of a vapor 失效
标题翻译：控制蒸气分子量分布的装置和方法
公开(公告)号：US06511702B1
公开(公告)日：2003-01-28
申请号：US09708504
申请日：2000-11-09
申请人： Michael Joseph Stirniman , Paul Stephen McLeod , Yuh-Jen Cheng
发明人： Michael Joseph Stirniman , Paul Stephen McLeod , Yuh-Jen Cheng
IPC分类号： C23C1424
CPC分类号： B05D1/60 , B05D5/083 , C23C14/12 , C23C14/542 , G11B5/725 , G11B5/8408
摘要： A method and apparatus to provide a substantially steady-state concentration of one or more molecular components, each molecular component having a different vapor pressure, to a vapor deposition chamber. Particularly, the method and apparatus will provide one or more molecular components whose concentration in the vapor deposition chamber, that is, whose weight average molecular weight does not vary with time by more than 50%, preferably by no more than 70%, during deposition of a particular lubricant.
摘要翻译：向蒸镀室提供基本上稳态浓度的一种或多种分子组分（每种分子组分具有不同蒸气压）的方法和装置。特别地，该方法和装置将提供一种或多种分子成分，其在蒸镀室中的浓度，即其重均分子量在沉积期间不随时间变化大于50％，优选不超过70％的特定润滑剂。

4. 发明授权

US08133803B2 Method for fabricating semiconductor substrates and semiconductor devices 有权
标题翻译：制造半导体衬底和半导体器件的方法
公开(公告)号：US08133803B2
公开(公告)日：2012-03-13
申请号：US12489688
申请日：2009-06-23
申请人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-Chung Kuo
发明人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-Chung Kuo
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02551 , H01L21/02658 , H01L33/007
摘要： A method for fabricating a semiconductor layer comprising: a) growing a semiconductor layer on a foreign substrate; b) forming at least one opening on the semiconductor layer, wherein the opening exposes the interface between the semiconductor layer and the foreign substrate; and c) removing at least part of the semiconductor solid state material along the interface between the semiconductor layer and the foreign substrate. The removing step c) is preferably achieved by selective interfacial chemical etching. The semiconductor layer may be utilized as a substrate for fabrication of a wide variety of electronic and opto-electronic devices and integrated circuitry products.
摘要翻译：一种制造半导体层的方法，包括：a）在异质衬底上生长半导体层; b）在所述半导体层上形成至少一个开口，其中所述开口暴露所述半导体层和所述异质衬底之间的界面; 以及c）沿着所述半导体层和所述异质衬底之间的界面去除所述半导体固态材料的至少一部分。去除步骤c）优选通过选择性界面化学蚀刻来实现。半导体层可以用作用于制造各种电子和光电子器件和集成电路产品的衬底。

5. 发明申请

US20110233519A1 Fabrication of GaN Substrate by Defect Selective Passivation 有权
标题翻译：通过缺陷选择性钝化制备GaN衬底
公开(公告)号：US20110233519A1
公开(公告)日：2011-09-29
申请号：US12729698
申请日：2010-03-23
申请人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-chung Kuo
发明人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-chung Kuo
IPC分类号： H01L29/66 , H01L33/30 , H01L21/20
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： Defect selective passivation in semiconductor fabrication for reducing defects.
摘要翻译：半导体制造中缺陷选择性钝化以减少缺陷。

6. 发明授权

US06663938B1 Media contact zone with bell-shaped texturing features 失效
标题翻译：具有钟形纹理特征的介质接触区
公开(公告)号：US06663938B1
公开(公告)日：2003-12-16
申请号：US09210018
申请日：1998-12-11
申请人： Wei H. Yao , Yuh-Jen Cheng , Li-Ping Wang , David S. Kuo , Chiao-Ping Ku , Bruno Marchon
发明人： Wei H. Yao , Yuh-Jen Cheng , Li-Ping Wang , David S. Kuo , Chiao-Ping Ku , Bruno Marchon
IPC分类号： G11B582
CPC分类号： G11B5/82 , G11B5/6005 , G11B23/0021 , Y10T428/24355
摘要： A magnetic data recording medium substrate has a contact zone and a data zone. The contact zone is textured by forming multiple texturing features, each having a bell-shaped profile resembling a Gaussian curve. The features preferably are formed by pulsed laser energy applied to a glass substrate, or to an aluminum nickel-phosphorous substrate coated with a glass layer. As compared to previous laser texturing approaches, the laser beam is less narrowly focused to provide a beam impingement area with a diameter of at least three microns, forming texturing features with diameters of at least three microns. The texturing features preferably are uniform in height and diameter, and may be symmetrical or have asymmetrical aspects, so long as bell-shaped profiles are present in the direction of travel of the recording medium, relative to transducing heads.
摘要翻译：磁数据记录介质基板具有接触区和数据区。通过形成多个纹理特征来形成接触区域，每个具有类似于高斯曲线的钟形轮廓。特征优选通过施加到玻璃基板的脉冲激光能量或涂覆有玻璃层的铝镍磷基板形成。与以前的激光纹理方法相比，激光束的聚焦较少，以提供直径至少为三微米的光束冲击区域，形成具有至少三微米直径的纹理特征。纹理特征优选地在高度和直径上是均匀的，并且可以是对称的或具有不对称的方面，只要钟形轮廓相对于换能头在记录介质的行进方向上存在。

7. 发明授权

US08501597B2 Method for fabricating group III-nitride semiconductor 有权
标题翻译： III族氮化物半导体的制造方法
公开(公告)号：US08501597B2
公开(公告)日：2013-08-06
申请号：US13191798
申请日：2011-07-27
申请人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-Chung Kuo
发明人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-Chung Kuo
IPC分类号： H01L21/20 , H01L21/36 , H01L21/00
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02458 , H01L21/02642 , H01L21/02647 , H01L33/007 , H01L33/20
摘要： A method of fabricating a group III-nitride semiconductor includes the following steps of: forming a first patterned mask layer with a plurality of first openings deposited on an epitaxial substrate; epitaxially growing a group III-nitride semiconductor layer over the epitaxial substrate and covering at least part of the first patterned mask layer; etching the group III-nitride semiconductor layer to form a plurality of second openings, which are substantially at least partially aligned with the first openings; and epitaxially growing the group III-nitride semiconductor layer again.
摘要翻译：制造III族氮化物半导体的方法包括以下步骤：形成具有沉积在外延衬底上的多个第一开口的第一图案化掩模层; 在所述外延衬底上外延生长III族氮化物半导体层并且覆盖所述第一图案化掩模层的至少一部分; 蚀刻III族氮化物半导体层以形成多个第二开口，其基本上至少部分地与第一开口对准; 并再次外延生长III族氮化物半导体层。

8. 发明授权

US08450190B2 Fabrication of GaN substrate by defect selective passivation 有权
标题翻译：通过缺陷选择性钝化制造GaN衬底
公开(公告)号：US08450190B2
公开(公告)日：2013-05-28
申请号：US12729698
申请日：2010-03-23
申请人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-chung Kuo
发明人： Yuh-Jen Cheng , Ming-Hua Lo , Hao-chung Kuo
IPC分类号： H01L21/20 , H01L21/36 , H01L21/31 , H01L21/469 , H01L21/302
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02639 , H01L21/02642 , H01L21/02647 , H01L33/007
摘要： Defect selective passivation in semiconductor fabrication for reducing defects.
摘要翻译：半导体制造中缺陷选择性钝化以减少缺陷。

9. 发明授权

US06483631B1 Optical amplifier spectral tilt controllers 失效
标题翻译：光放大器光谱倾斜控制器
公开(公告)号：US06483631B1
公开(公告)日：2002-11-19
申请号：US09900137
申请日：2001-07-09
申请人： Yuh-Jen Cheng , Rene H. Monnard
发明人： Yuh-Jen Cheng , Rene H. Monnard
IPC分类号： H01S300
CPC分类号： H04B10/2941 , H01S3/06754 , H01S3/1301 , H01S3/1305
摘要： Spectral tilt controllers are provided for optical amplifiers and other optical network equipment used in fiber-optic communications links in fiber-optic networks. The tilt controllers may be used to adjust the gain or output power spectrum of an optical amplifier or to modify the optical data signal spectrum in other optical network equipment. Tilt controllers may use mechanical actuators to position a filter element substrate relative to an optical beam. Dielectric filters or other filter arrangements having various different spectral tilt characteristics may be implemented on the same substrate. Spectral tilt and average spectral attenuation values may be adjusted using the tilt controllers if desired.
摘要翻译：光纤倾斜控制器适用于光纤放大器和光纤网络光纤通信链路中使用的其他光网络设备。倾斜控制器可以用于调整光放大器的增益或输出功率谱或修改其他光网络设备中的光数据信号频谱。倾斜控制器可以使用机械致动器来相对于光束定位过滤器元件基板。具有各种不同光谱倾斜特性的介质滤波器或其它滤波器装置可以在相同的基板上实现。如果需要，可以使用倾斜控制器来调整光谱倾斜和平均光谱衰减值。

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