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1. 发明授权

US06965361B1 Method of manufacture of active matrix addressed polymer LED display 失效
标题翻译：有源矩阵寻址聚合物LED显示屏的制造方法
公开(公告)号：US06965361B1
公开(公告)日：2005-11-15
申请号：US09098190
申请日：1998-06-16
申请人： James R. Sheats , Mark R. Hueschen , Ronald L. Moon
发明人： James R. Sheats , Mark R. Hueschen , Ronald L. Moon
IPC分类号： G08B5/22 , G09G3/32 , H01L27/32
CPC分类号： H01L27/3251 , H01L27/322 , H01L2251/5338
摘要： A display having a plurality of light emitting pixels. Each pixels includes an isolation transistor, a driving circuit, and an organic light emitting diode (OLED). The driving circuit storing a value that determines the magnitude of the light emitted by that pixels, the driving circuit placing the OLED in a conducting path between the first and second power terminals. The driving circuit is programmed through the isolation transistor. In one embodiment of the present invention, the driving circuit includes a storage capacitor and a driving transistor. The OLEDs are part of an array of OLEDs. The array of OLEDs is constructed on a flexible sheet having first and second surfaces, the flexible sheet being transparent to light of a first wavelength. A transparent first electrode layer is in contact with the first surface. A light emitting layer including an organic polymer is in contact with the first electrode layer. A plurality of second electrodes, one such second electrode corresponding to each of the OLEDs, is in contact with the light emitting layer. Each second electrode has an isolated conducting area. The driving transistor are part of a transistor array having a plurality of connection points disposed on a surface, each connection point corresponding to one of the second electrodes in the array of OLEDs. The connection points are arranged such that each second electrode overlies the corresponding connection point when the array of OLEDs is properly aligned with the transistor array. The connection points are bonded to the corresponding second electrodes by a bonding layer.
摘要翻译：具有多个发光像素的显示器。每个像素包括隔离晶体管，驱动电路和有机发光二极管（OLED）。驱动电路存储确定由该像素发射的光的大小的值，驱动电路将OLED置于第一和第二电源端子之间的导电路径中。驱动电路通过隔离晶体管编程。在本发明的一个实施例中，驱动电路包括存储电容器和驱动晶体管。 OLED是OLED阵列的一部分。 OLED阵列构造在具有第一和第二表面的柔性片上，柔性片对第一波长的光是透明的。透明的第一电极层与第一表面接触。包含有机聚合物的发光层与第一电极层接触。多个第二电极，对应于每个OLED的一个这样的第二电极与发光层接触。每个第二电极具有隔离的导电区域。驱动晶体管是具有设置在表面上的多个连接点的晶体管阵列的一部分，每个连接点对应于OLED阵列中的第二电极之一。连接点布置成使得当OLED阵列与晶体管阵列正确对准时，每个第二电极覆盖相应的连接点。连接点通过接合层与相应的第二电极接合。

2. 发明授权

US06146225A Transparent, flexible permeability barrier for organic electroluminescent devices 失效
标题翻译：透明，柔性的有机电致发光器件的导电屏障
公开(公告)号：US06146225A
公开(公告)日：2000-11-14
申请号：US126689
申请日：1998-07-30
申请人： James R. Sheats , Mark R. Hueschen , Karen L. Seaward , Daniel B. Roitman , George Andrew Davidson Briggs
发明人： James R. Sheats , Mark R. Hueschen , Karen L. Seaward , Daniel B. Roitman , George Andrew Davidson Briggs
IPC分类号： H01L51/50 , H01L51/52 , H05B33/04 , H05B33/10 , H05B33/12 , H05B33/14
CPC分类号： H01L51/5256 , H01L51/5259 , H05B33/04
摘要： A barrier for preventing water or oxygen from a source thereof from reaching a device that is sensitive to water or oxygen. The barrier is constructed by depositing a first polymer layer between the device and the source. An inorganic layer is deposited on the first polymer layer of the device by plasma enhanced chemical vapor deposition utilizing an electron cyclotron resonance source ECR-PECVD. A second polymer layer is then deposited on the inorganic layer. The inorganic layer is preferably an oxide or nitride. A second barrier layer having a compound that absorbs oxygen or water can be placed between the inorganic layer and the device to further retard the passage of oxygen or water. The present invention is particularly useful in encapsulating electroluminescent displays.
摘要翻译：用于防止来自其源的水或氧气到达对水或氧气敏感的装置的屏障。通过在装置和源之间沉积第一聚合物层来构造阻挡层。通过使用电子回旋共振源ECR-PECVD的等离子体增强化学气相沉积在器件的第一聚合物层上沉积无机层。然后将第二聚合物层沉积在无机层上。无机层优选为氧化物或氮化物。具有吸收氧气或水的化合物的第二阻隔层可以放置在无机层和装置之间，以进一步延缓氧气或水的通过。本发明特别可用于封装电致发光显示器。

3. 发明授权

US5629389A Polymer-based electroluminescent device with improved stability 失效
标题翻译：基于聚合物的电致发光器件具有改进的稳定性
公开(公告)号：US5629389A
公开(公告)日：1997-05-13
申请号：US463141
申请日：1995-06-06
申请人： Daniel B. Roitman , James R. Sheats , Mark R. Hueschen
发明人： Daniel B. Roitman , James R. Sheats , Mark R. Hueschen
IPC分类号： H05B33/20 , C09K11/02 , C09K11/06 , H01L51/00 , H01L51/30 , H01L51/50 , H05B33/12 , H05B33/14 , C08F283/00 , H01B1/00 , H01L27/15 , H01L31/12
CPC分类号： H01L51/5012 , C09K11/025 , C09K11/06 , H05B33/14 , H01L51/0038 , Y10S362/80
摘要： An improved electroluminescent device which includes a hole injection electrode, an electron injection electrode, and an electroluminescent layer located between the hole and electron injection electrodes. The electroluminescent layer includes an organic polymer and a hindered phenolic additive in a concentration greater than 4% by weight. The preferred organic polymer is a derivative of PPV. The preferred hindered phenolic additives are and 2,4,6 tri-tert-butyl phenol 2,6 di-tert-butyl-methylphenol. The device has higher efficiency and a slower rate of degradation than devices lacking the hindered phenolic additive.
摘要翻译：一种改进的电致发光器件，其包括位于空穴和电子注入电极之间的空穴注入电极，电子注入电极和电致发光层。电致发光层包括浓度大于4重量％的有机聚合物和受阻酚类添加剂。优选的有机聚合物是PPV的衍生物。优选的受阻酚添加剂是2,4,6-三叔丁基苯酚2,6-二叔丁基 - 甲基苯酚。该装置具有比缺乏受阻酚添加剂的装置更高的效率和更低的降解速率。

4. 发明授权

US07345324B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US07345324B2
公开(公告)日：2008-03-18
申请号：US11177670
申请日：2005-07-07
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

5. 发明授权

US06878975B2 Polarization field enhanced tunnel structures 有权
标题翻译：极化场增强隧道结构
公开(公告)号：US06878975B2
公开(公告)日：2005-04-12
申请号：US10071439
申请日：2002-02-08
申请人： Mark R. Hueschen
发明人： Mark R. Hueschen
IPC分类号： H01L29/20 , H01L29/88 , H01L33/14 , H01L29/885
CPC分类号： H01L33/14 , H01L29/2003 , H01L29/88 , H01S5/3095
摘要： A novel tunnel structure is described that enables tunnel diode behavior to be exhibited even in material systems in which extremely heavy doping is impossible and only moderate or light doping levels may be achieved. In one aspect, the tunnel heterostructure includes a first semiconductor layer, a second semiconductor layer, and an intermediate semiconductor layer that is sandwiched between the first and second semiconductor layers and forms first and second heterointerfaces respectively therewith. The first and second heterointerfaces are characterized by respective polarization charge regions that produce a polarization field across the intermediate semiconductor layer that promotes charge carrier tunneling through the intermediate semiconductor layer. In another aspect, the invention features a semiconductor structure having a p-type region, and the above-described heterostructure disposed as a tunnel contact between the p-type region of the semiconductor structure and an adjacent n-type region.
摘要翻译：描述了一种新颖的隧道结构，即使在不可能进行极重掺杂的材料系统中也能够显示隧道二极管的性能，并且仅可实现中等或轻掺杂水平。在一个方面，隧道异质结构包括第一半导体层，第二半导体层和夹在第一和第二半导体层之间并分别形成第一和第二异质界面的中间半导体层。第一和第二异质界面的特征在于各自的极化电荷区域，其产生穿过中间半导体层的电荷载流子隧道穿过中间半导体层的极化场。在另一方面，本发明的特征在于具有p型区域的半导体结构，并且上述异质结构被设置为在半导体结构的p型区域和相邻的n型区域之间的隧道接触。

6. 发明授权

US5055891A Heterostructure transistor using real-space electron transfer 失效
标题翻译：使用实时电子传输的异构结构晶体管
公开(公告)号：US5055891A
公开(公告)日：1991-10-08
申请号：US532485
申请日：1990-05-31
申请人： Nicolas J. Moll , Mark R. Hueschen , Marek E. Mierzwinski
发明人： Nicolas J. Moll , Mark R. Hueschen , Marek E. Mierzwinski
IPC分类号： H01L29/205 , H01L29/66 , H01L29/68 , H01L29/76
CPC分类号： H01L29/7606
摘要： A charge injection transistor is a real-space electron transfer heterostructure with several novel features. The channel layer is comprised of In.sub.0.25 Ga.sub.0.75 As supported by a buffer layer of Al.sub.0.3 Ga.sub.0.7 As resting on the substrate. A barrier layer comprised of Al.sub.0.1 Ga.sub.0.9 As overlays the channel layer. Over this barrier is a layer of GaAs forming the electron drift region. The collector electrode is located on top of this drift layer, between the source and heater electrodes, which extend downward through the drift and barrier layers and create the electric field in the channel layer. Positive voltages are applied to the heater and collector, relative to the source. Electrons flow through the channel region and become heated. At sufficiently high temperature they escape over the barrier and travel through the drift region to the collector. In comparison with previous devices, the use of InGaAs in the channel layer provides a deeper quantum well for the conduction electrons, and suppresses leakage through the barrier at room temperatures. The collector drift layer has a short transit time delay. The location of the collector reduces parasitic leakage from the source, and the collector capacitance is small. These features enhance the high frequency performance of the device. The limiting power gain frequency and current gain frequency are at least twice the corresponding values attained in previous devices.

7. 发明授权

US06955933B2 Light emitting diodes with graded composition active regions 失效
标题翻译：具有分级组成活性区的发光二极管
公开(公告)号：US06955933B2
公开(公告)日：2005-10-18
申请号：US09912589
申请日：2001-07-24
申请人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
发明人： David P. Bour , Nathan F. Gardner , Werner K. Goetz , Stephen A. Stockman , Tetsuya Takeuchi , Ghulam Hasnain , Christopher P. Kocot , Mark R. Hueschen
IPC分类号： H01L33/06 , H01L33/32 , H01L21/00
CPC分类号： H01L33/32 , H01L33/06
摘要： A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region includes a second semiconductor layer which is either a quantum well layer or a barrier layer. The second semiconductor layer is formed from a semiconductor alloy having a composition graded in a direction substantially perpendicular to the first surface of the first semiconductor layer. The light emitting device also includes a third semiconductor layer of a second conductivity type formed overlying the active region.
摘要翻译：根据本发明的实施例的发光器件包括具有第一表面的第一导电类型的第一半导体层和形成在第一半导体层上的有源区。有源区包括作为量子阱层或阻挡层的第二半导体层。第二半导体层由具有在基本上垂直于第一半导体层的第一表面的方向分级的成分的半导体合金形成。发光器件还包括形成在有源区上的第二导电类型的第三半导体层。

8. 发明授权

US5872355A Electroluminescent device and fabrication method for a light detection system 失效
标题翻译：光检测系统的电致发光元件及其制造方法
公开(公告)号：US5872355A
公开(公告)日：1999-02-16
申请号：US833815
申请日：1997-04-09
申请人： Mark R. Hueschen
发明人： Mark R. Hueschen
IPC分类号： G01B11/00 , C09K11/06 , G06T1/00 , H01L27/32 , H01L51/50 , H04N1/031 , H05B33/04 , H05B33/10 , H05B33/12 , H05B33/14 , H01J40/14 , H01L33/00
CPC分类号： H04N1/02845 , H04N1/0311 , H04N1/0317 , H01L27/32
摘要： A device for a light detection system includes an electroluminescent layer stack on a transparent member, such as a glass substrate, with at least one layer of the layer stack being patterned to define first and second electroluminescent regions spaced apart by a transparent light collection path for passage of backreflected light. The layer stack includes first and second electrode layers on opposed sides of one or more active layers. In one embodiment, the second electrode layer is the only layer that is patterned to define the light collection path. In this embodiment, the other layers extend continuously across the light collection path. In another embodiment, all of the layers are patterned to form a gap between the first and second electroluminescent regions. The layer stack is hermetically sealed to protect the active layer or layers from atmosphere-induced degradation. An illumination collector is aligned with the light collection path to receive light that is backreflected from a surface of interest through the light collection path. The illumination collector may be an optical arrangement, a photodetector, or both. In the preferred embodiment, the electroluminescent layer stack is an organic light-emitting source.
摘要翻译：用于光检测系统的装置包括在诸如玻璃基板的透明构件上的电致发光层堆叠，其中至少一层该层堆叠被构图以限定由透明光收集路径间隔开的第一和第二电致发光区域，用于后反射光的通过。层叠层包括在一个或多个有源层的相对侧上的第一和第二电极层。在一个实施例中，第二电极层是图案化以限定光收集路径的唯一层。在该实施例中，其它层连续延伸穿过光线收集路径。在另一个实施例中，所有层被图案化以在第一和第二电致发光区域之间形成间隙。层叠层被密封以保护活性层免受大气引起的降解。照明收集器与光收集路径对准以接收通过光收集路径从感兴趣的表面反射的光。照明收集器可以是光学装置，光电检测器或两者。在优选实施例中，电致发光层堆叠是有机发光源。

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