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    • 3. 发明授权
      US08445975B2 Replacement metal gate transistors with reduced gate oxide leakage 有权
    • Replacement metal gate transistors with reduced gate oxide leakage
    • 替代金属栅极晶体管，栅极氧化物泄漏减少
    • US08445975B2
    • 2013-05-21
    • US13290275
    • 2011-11-07
    • James Pan , John Pellerin
    • James Pan , John Pellerin
    • H01L21/02
    • H01L21/28008 , H01L21/28088 , H01L21/28238 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545
    • A semiconductor device has a substrate, a gate dielectric layer, and a metal gate electrode on the gate dielectric layer. The gate dielectric layer includes an oxide layer having a dielectric constant (k) greater than 4, and silicon concentrated at interfaces of the oxide layer with the substrate and with the metal gate electrode. A method of fabricating a semiconductor device includes forming a removable gate over a substrate with a gate dielectric layer between the removable gate and the substrate, forming a dielectric layer over the substrate and exposing an upper surface of the removable gate, removing the removable gate leaving an opening in the dielectric layer, forming a protective layer on the gate dielectric layer and lining the opening, and forming a metal gate electrode in the opening. The protective layer has a graded composition between the gate dielectric layer and the metal gate electrode.
    • 半导体器件在栅极电介质层上具有衬底，栅极电介质层和金属栅电极。 栅极电介质层包括介电常数（k）大于4的氧化物层，并且硅集中在氧化物层与衬底和金属栅电极的界面处。 一种制造半导体器件的方法包括在衬底上形成可移除栅极，在可移除栅极和衬底之间具有栅极电介质层，在衬底上形成电介质层并露出可移除栅极的上表面，去除可移除栅极离开 在电介质层中形成开口，在栅极电介质层上形成保护层并衬套开口，并在开口中形成金属栅电极。 保护层在栅极电介质层和金属栅电极之间具有渐变组成。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 4. 发明申请
      US20120049196A1 REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE 有权
    • REPLACEMENT METAL GATE TRANSISTORS WITH REDUCED GATE OXIDE LEAKAGE
    • 更换具有减少栅极氧化物泄漏的金属栅极晶体管
    • US20120049196A1
    • 2012-03-01
    • US13290275
    • 2011-11-07
    • James Pan , John Pellerin
    • James Pan , John Pellerin
    • H01L29/786 , H01L21/28
    • H01L21/28008 , H01L21/28088 , H01L21/28238 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545
    • A semiconductor device has a substrate, a gate dielectric layer, and a metal gate electrode on the gate dielectric layer. The gate dielectric layer includes an oxide layer having a dielectric constant (k) greater than 4, and silicon concentrated at interfaces of the oxide layer with the substrate and with the metal gate electrode. A method of fabricating a semiconductor device includes forming a removable gate over a substrate with a gate dielectric layer between the removable gate and the substrate, forming a dielectric layer over the substrate and exposing an upper surface of the removable gate, removing the removable gate leaving an opening in the dielectric layer, forming a protective layer on the gate dielectric layer and lining the opening, and forming a metal gate electrode in the opening. The protective layer has a graded composition between the gate dielectric layer and the metal gate electrode.
    • 半导体器件在栅极电介质层上具有衬底，栅极电介质层和金属栅电极。 栅极电介质层包括介电常数（k）大于4的氧化物层，并且硅集中在氧化物层与衬底和金属栅电极的界面处。 一种制造半导体器件的方法包括在衬底上形成可移除栅极，在可移除栅极和衬底之间具有栅极电介质层，在衬底上形成电介质层并露出可移除栅极的上表面，去除可移除栅极离开 在电介质层中形成开口，在栅极电介质层上形成保护层并衬套开口，并在开口中形成金属栅电极。 保护层在栅极电介质层和金属栅电极之间具有渐变组成。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 6. 发明申请
      US20070102776A1 Replacement metal gate transistors with reduced gate oxide leakage 有权
    • Replacement metal gate transistors with reduced gate oxide leakage
    • 替代金属栅极晶体管，栅极氧化物泄漏减少
    • US20070102776A1
    • 2007-05-10
    • US11269745
    • 2005-11-09
    • James Pan , John Pellerin
    • James Pan , John Pellerin
    • H01L29/78 , H01L21/4763
    • H01L21/28008 , H01L21/28088 , H01L21/28238 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545
    • Thin effective gate oxide thickness with reduced leakage for replacement metal gate transistors is achieved by forming a protective layer between the gate oxide layer and metal gate electrode, thereby reducing stress. Embodiments include forming a protective layer of amorphous carbon containing metal carbides decreasing in concentration from the metal gate electrode toward the gate oxide layer across the protective layer. Embodiments of methodology include removing the removable gate, depositing a layer of amorphous carbon on the gate oxide layer, forming the metal gate electrode and then heating at an elevated temperature to diffuse metal from the metal gate electrode into the amorphous carbon layer, thereby forming the metal carbides. Embodiments also include metal gate transistors with a gate oxide layer having a high dielectric constant and silicon concentrated at the interfaces with the metal gate electrode and substrate.
    • 通过在栅极氧化层和金属栅电极之间形成保护层来实现用于替换金属栅极晶体管的具有减小的泄漏的薄的有效栅极氧化物厚度，从而降低应力。 实施例包括形成从金属栅电极朝向保护层的栅极氧化物层浓缩的含有金属碳化物的非晶碳保护层。 方法的实施例包括去除可移除栅极，在栅极氧化物层上沉积无定形碳层，形成金属栅电极，然后在升高的温度下加热以使金属从金属栅电极扩散到无定形碳层中，从而形成 金属碳化物。 实施例还包括具有高介电常数的栅极氧化物层和在与金属栅电极和衬底的界面处集中的硅的金属栅极晶体管。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 9. 发明授权
      US08053849B2 Replacement metal gate transistors with reduced gate oxide leakage 有权
    • Replacement metal gate transistors with reduced gate oxide leakage
    • 替代金属栅极晶体管，栅极氧化物泄漏减少
    • US08053849B2
    • 2011-11-08
    • US11269745
    • 2005-11-09
    • James Pan , John Pellerin
    • James Pan , John Pellerin
    • H01L21/02
    • H01L21/28008 , H01L21/28088 , H01L21/28238 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L29/66545
    • Thin effective gate oxide thickness with reduced leakage for replacement metal gate transistors is achieved by forming a protective layer between the gate oxide layer and metal gate electrode, thereby reducing stress. Embodiments include forming a protective layer of amorphous carbon containing metal carbides decreasing in concentration from the metal gate electrode toward the gate oxide layer across the protective layer. Embodiments of methodology include removing the removable gate, depositing a layer of amorphous carbon on the gate oxide layer, forming the metal gate electrode and then heating at an elevated temperature to diffuse metal from the metal gate electrode into the amorphous carbon layer, thereby forming the metal carbides. Embodiments also include metal gate transistors with a gate oxide layer having a high dielectric constant and silicon concentrated at the interfaces with the metal gate electrode and substrate.
    • 通过在栅极氧化层和金属栅电极之间形成保护层来实现用于替换金属栅极晶体管的具有减小的泄漏的薄的有效栅极氧化物厚度，从而降低应力。 实施例包括形成从金属栅电极朝向保护层的栅极氧化物层浓缩的含有金属碳化物的非晶碳保护层。 方法的实施例包括去除可移除栅极，在栅极氧化物层上沉积无定形碳层，形成金属栅电极，然后在升高的温度下加热以使金属从金属栅电极扩散到无定形碳层中，从而形成 金属碳化物。 实施例还包括具有高介电常数的栅极氧化物层和在与金属栅电极和衬底的界面处集中的硅的金属栅极晶体管。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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