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    • 9. 发明授权
    • Ultrashort laser pulse wafer scribing
    • 超短脉冲激光脉冲晶片刻划
    • US08624157B2
    • 2014-01-07
    • US11440792
    • 2006-05-25
    • Jeffrey A. AlbeloPeter Pirogovsky
    • Jeffrey A. AlbeloPeter Pirogovsky
    • B23K26/38B23K26/06
    • B23K26/364B23K26/0624B23K26/384B23K26/386B23K26/389B23K26/40B23K2101/40B23K2103/50
    • Systems and methods are provided for scribing wafers with short laser pulses so as to reduce the ablation threshold of target material. In a stack of material layers, a minimum laser ablation threshold based on laser pulse width is determined for each of the layers. The highest of the minimum laser ablation thresholds is selected and a beam of one or more laser pulses is generated having a fluence in a range between the selected laser ablation threshold and approximately ten times the selected laser ablation threshold. In one embodiment, a laser pulse width in a range of approximately 0.1 picosecond to approximately 1000 picoseconds is used. In addition, or in other embodiments, a high pulse repetition frequency is selected to increase the scribing speed. In one embodiment, the pulse repetition frequency is in a range between approximately 100 kHz and approximately 100 MHz.
    • 提供了用短激光脉冲刻划晶片的系统和方法,以减少目标材料的消融阈值。 在堆叠的材料层中,针对每个层确定基于激光脉冲宽度的最小激光烧蚀阈值。 选择最小激光消融阈值中的最高值,并且产生一个或多个激光脉冲的光束,其具有在所选择的激光烧蚀阈值和所选激光烧蚀阈值的大约十倍之间的范围内的能量密度。 在一个实施例中,使用在约0.1皮秒至约1000皮秒范围内的激光脉冲宽度。 另外或在其他实施例中,选择高脉冲重复频率以增加划线速度。 在一个实施例中,脉冲重复频率在大约100kHz到大约100MHz之间的范围内。