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1. 发明申请

US20080123222A1 Superparamagnetic field sensing devices 失效
标题翻译：超顺磁场检测装置
公开(公告)号：US20080123222A1
公开(公告)日：2008-05-29
申请号：US12011545
申请日：2008-01-28
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要翻译：一种铁磁性薄膜基磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中在其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩余的一个超顺磁薄膜的所述中间层主表面。

2. 发明授权

US07355822B2 Superparamagnetic field sensing device 有权
标题翻译：超顺磁场检测装置
公开(公告)号：US07355822B2
公开(公告)日：2008-04-08
申请号：US11359743
申请日：2006-02-22
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/39 , G11R33/09
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.
摘要翻译：一种铁磁性薄膜基磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中在其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩余的一个超顺磁薄膜的所述中间层主表面。

3. 发明授权

US07054118B2 Superparamagnetic field sensing devices 有权
公开(公告)号：US07054118B2
公开(公告)日：2006-05-30
申请号：US10394799
申请日：2003-03-21
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and a superparamagnetic thin-film on the remaining one of said intermediate layer major surfaces.

4. 发明授权

US06713195B2 Magnetic devices using nanocomposite materials 有权
标题翻译：使用纳米复合材料的磁性器件
公开(公告)号：US06713195B2
公开(公告)日：2004-03-30
申请号：US10041910
申请日：2002-01-07
申请人： Dexin Wang , Zhenghong Qian , James M. Daughton , Robert T. Fayfield
发明人： Dexin Wang , Zhenghong Qian , James M. Daughton , Robert T. Fayfield
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01F10/3231 , H01L43/10 , Y10T428/1121 , Y10T428/12861 , Y10T428/12931 , Y10T428/26 , Y10T428/261
摘要： A ferromagnetic thin-film based magnetoresistive device with a first ferromagnetic material based film having electrically conductive, ferromagnetic material nanogranules embedded in an intergranular material of a smaller electrical conductivity first nonmagnetic. The device may have an intermediate layer adjacent the first ferromagnetic material based film and a second film is on the other side of the intermediate layer of a substantially ferromagnetic material. The first film is less than 1.0 &mgr;m thick.
摘要翻译：一种基于铁磁薄膜的磁阻器件，其具有第一基于铁磁材料的膜，该膜具有导电的铁磁性材料纳米颗粒，该纳米粒子嵌入在较小导电性的非晶格材料中。该装置可以具有与第一基于铁磁材料的膜相邻的中间层，并且第二膜位于基本上铁磁材料的中间层的另一侧上。第一个胶片厚度小于1.0毫米。

5. 发明授权

US07660081B2 Superparamagnetic platelets field sensing devices 失效
标题翻译：超顺磁性血小板场感测装置
公开(公告)号：US07660081B2
公开(公告)日：2010-02-09
申请号：US12011545
申请日：2008-01-28
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/127 , G11B5/39
CPC分类号： G01R33/093 , A45B25/12 , B82Y10/00 , B82Y25/00 , G11B5/332 , G11B5/39 , G11B5/3903 , G11B5/3909 , G11B5/398 , G11B2005/0002 , G11B2005/3996 , G11C11/16 , H01F10/3254 , Y10T428/1114 , Y10T428/1121 , Y10T428/1143
摘要： A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfaces and thin-film platelets on the remaining one of the intermediate layer major surfaces.
摘要翻译：一种基于铁磁薄膜的磁场传感器，其具有在其相对侧上具有两个主表面的电绝缘中间层，其中一个中间层主表面上的各向异性铁磁材料的初始膜和剩下的一个的薄膜片中间层主要表面。

6. 发明授权

US06462541B1 Uniform sense condition magnetic field sensor using differential magnetoresistance 有权
标题翻译：使用差分磁阻的均匀感应条件磁场传感器
公开(公告)号：US06462541B1
公开(公告)日：2002-10-08
申请号：US09439892
申请日：1999-11-12
申请人： Dexin Wang , Mark C. Tondra , James M. Daughton
发明人： Dexin Wang , Mark C. Tondra , James M. Daughton
IPC分类号： G01R3302
CPC分类号： B82Y25/00 , G01R33/093
摘要： A ferromagnetic thin-film based sensing arrangement having a plurality of magnetic field sensors on a substrate each having an intermediate layer of a nonmagnetic material with two major surfaces on opposite sides thereof with one of a pair of magnetically permeable films each of a magnetoresistive, anisotropic ferromagnetic material correspondingly positioned thereon with first and second oriented sensors therein respectively having a selected and a reversing magnetization orientation structure provided with one of said pair of permeable films thereof for orienting its magnetization in a selected direction absent an externally applied magnetic field in at least partly opposing directions. Alternatively, these magnetizations of the films can be oriented in the same direction but with the other film member of the pair provided adjacent a coupling layer that antiferromagnetically couples thereto a further ferromagnetic layer on an opposite side thereof of a lesser thickness for one sensor and a greater thickness for the other. Such a sensing arrangement can be formed by providing a succession of material layers on a substrate with one or more coupling layers for antiferromagnetically coupling ferromagnetic layers on opposite sides thereof including a permeable film. Selective removal of the succession follows to provide unequal numbers of coupling layers for the two kinds of sensors or unequal thicknesses of corresponding ferromagnetic layers corresponding to the coupling layer and the providing of a pinning layer for both kinds of sensors which are thereafter separated by further material removal.
摘要翻译：一种基于铁磁薄膜的感测装置，其具有在基板上的多个磁场传感器，每个磁场传感器具有非磁性材料的中间层，在其相对侧上具有两个主表面，其中一个磁导膜与磁阻，各向异性相应地设置在其上的第一和第二定向传感器的铁磁材料分别具有选定的和反向的磁化取向结构，所述磁性取向结构设置有所述一对可渗透膜中的一个，用于在选定的方向上使其磁化方向定向，而不存在外部施加的磁场，至少部分相反的方向或者，膜的这些磁化可以在相同的方向上取向，但是一对中的另一个膜构件邻近耦合层设置，其反铁磁耦合到一个传感器的较小厚度的相对侧上的另一个铁磁层，并且更大的厚度为另一个。这样的感测装置可以通过在衬底上提供一系列材料层而形成，该层具有一个或多个耦合层，用于在其相对侧上反铁磁耦合铁磁层，包括可渗透膜。继续的选择性删除是为两种传感器提供不相等数量的耦合层，或者对应于耦合层的相应铁磁层的不等厚度以及为这两种传感器提供钉扎层，然后由另外的材料分离删除。

7. 发明授权

US07390584B2 Spin dependent tunneling devices having reduced topological coupling 有权
标题翻译：具有减小的拓扑耦合的自旋相关隧道装置
公开(公告)号：US07390584B2
公开(公告)日：2008-06-24
申请号：US10394950
申请日：2003-03-21
申请人： James M. Daughton , Dexin Wang
发明人： James M. Daughton , Dexin Wang
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： B82Y25/00 , G01R33/093 , H01L43/08 , Y10T428/1121 , Y10T428/1129 , Y10T428/1143 , Y10T428/1193 , Y10T428/31504
摘要： A ferromagnetic thin-film based magnetic device with internal film coupling compensation including a nonmagnetic material intermediate layer with an initial thin-film of an anisotropic ferromagnetic material on one side. A compensation thin-film of an anisotropic ferromagnetic material is provided on the opposite side with an antiparallel coupling layer thereon and a subsequent thin-film of an anisotropic ferromagnetic material on the antiparallel coupling layer with the compensation thin-film being less thick than the subsequent thin-film. A antiferromagnetic layer can be supported by the layers on either side of the intermediate layer.
摘要翻译：一种具有内部薄膜耦合补偿的铁磁薄膜型磁性装置，其包括一侧具有各向异性铁磁材料的初始薄膜的非磁性材料中间层。各向异性铁磁材料的补偿薄膜在其相反侧上设置有反平行耦合层，并且在反平行耦合层上的随后的各向异性铁磁材料薄膜的补偿薄膜厚度比后续的厚薄膜。反铁磁层可以由中间层两侧的层支撑。

8. 发明授权

US06777730B2 Antiparallel magnetoresistive memory cells 有权
标题翻译：反平行磁阻存储单元
公开(公告)号：US06777730B2
公开(公告)日：2004-08-17
申请号：US10230474
申请日：2002-08-29
申请人： James M. Daughton , Arthur V. Pohm , Dexin Wang
发明人： James M. Daughton , Arthur V. Pohm , Dexin Wang
IPC分类号： H01L31119
CPC分类号： G11C11/15 , B82Y10/00 , B82Y25/00 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L27/228
摘要： A ferromagnetic thin-film based digital memory having a plurality of bit structures electrically interconnected with information storage and retrieval circuitry that avoids information loss in one bit structure because of operating the others through this circuitry. Each of these bit structures formed of a relative orientation maintenance intermediate layer having two major surfaces on opposite sides thereof with a pair of memory films of an anisotropic ferromagnetic material each on a corresponding one of said relative orientation maintenance intermediate layer major surfaces. The relative orientation maintenance intermediate layer is of a material and a selected thickness so as to maintain magnetizations of said memory films oriented in substantially opposite directions. Interconnection electrodes pairs are each in electrically conductive contact with a corresponding one of the bit structures on substantially opposite sides thereof near or at substantially opposite edges of the relative orientation maintenance intermediate layer major surface. A magnetization reference direction layer able to maintain relatively well its magnetization orientation can be provided across a nonmagnetic layer from one of the pair of memory films with the nonmagnetic layer being either electrically conductive or insulative.
摘要翻译：一种基于铁磁薄膜的数字存储器，其具有与信息存储和检索电路电互连的多个位结构，其避免了由于通过该电路操作其它位而导致的一位结构中的信息丢失。这些位结构中的每一个由相对取向维护中间层形成，其相对侧面上具有两个主表面，其中一对各向异性铁磁材料的记忆膜各自位于所述相对取向维护中间层主表面的对应的一个。相对取向维持中间层具有材料和选定的厚度，以便使所述记忆膜的磁化保持在基本上相反的方向上。互连电极对在相对方向维护中间层主表面附近或基本上相对的边缘的基本上相对的两侧与相应的位结构导电接触。能够相对良好地保持其磁化取向的磁化参考方向层可以跨越一对存储膜中的一个非磁性层提供，其中非磁性层是导电的或绝缘的。

9. 发明授权

US06872467B2 Magnetic field sensor with augmented magnetoresistive sensing layer 有权
标题翻译：具有增强磁阻感测层的磁场传感器
公开(公告)号：US06872467B2
公开(公告)日：2005-03-29
申请号：US10704870
申请日：2003-11-10
申请人： Zhenghong Qian , James M. Daughton , Dexin Wang , Mark C. Tondra
发明人： Zhenghong Qian , James M. Daughton , Dexin Wang , Mark C. Tondra
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3909 , G11B5/3935 , G11B5/398 , G11B2005/3996 , H01F10/3254 , H01F10/3272 , H01F10/3295 , Y10T428/1121 , Y10T428/1171 , Y10T428/12465 , Y10T428/12646 , Y10T428/12806 , Y10T428/12986 , Y10T428/2495 , Y10T428/32
摘要： A ferromagnetic thin-film based magnetic field sensor having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof upon one of which a magnetization reference layer is provided and upon the other there being provided a sensing layer. A spacer layer is provided on the sensing film to separate this sensing film from an augmenting film with the spacer layer being sufficiently thick so as to significantly reduce or eliminate topological coupling between the sensing and augmenting films, and to significantly randomize spin states of emerging electrons traversing therethrough.
摘要翻译：一种基于铁磁性薄膜的磁场传感器，其具有非磁性中间层，在其相对侧上具有两个主表面，其中一个具有磁化参考层，而另一个则设置有感测层。在感测膜上设置间隔层以将该感测膜与增强膜分离，其中间隔层足够厚，以便显着减少或消除感测和增强膜之间的拓扑耦合，并显着随机化出现的电子的自旋态穿过其中

10. 发明授权

US07813165B2 Magnetic memory layers thermal pulse transitions 有权
标题翻译：磁存储层热脉冲过渡
公开(公告)号：US07813165B2
公开(公告)日：2010-10-12
申请号：US11881097
申请日：2007-07-25
申请人： James M. Daughton , Arthur V. Pohm
发明人： James M. Daughton , Arthur V. Pohm
IPC分类号： G11C5/06 , G11C5/08 , G11C11/02 , G11C11/14 , G11C11/15
CPC分类号： G11C11/16 , G11C11/15 , G11C11/1675 , H01L27/222 , H01L27/226 , H01L43/08
摘要： A ferromagnetic thin-film based digital memory having bit structures therein with a magnetic material film in which a magnetic property thereof is maintained below a critical temperature above which such magnetic property is not maintained, and may also have a plurality of word line structures each with heating sections located across from the magnetic material film in a corresponding one of the bit structures. These bit structures are sufficiently thermally isolated to allow selected currents in the adjacent word lines or in the bit structure, or both, to selectively heat the bit structure to approach the critical temperature. Such bit structures may have three magnetic material layers each with its own critical temperature for maintaining versus not maintaining a magnetic property thereof.
摘要翻译：一种基于铁磁性薄膜的数字存储器，其具有位结构，具有磁性材料膜，其磁性能保持在低于不能保持这种磁性的临界温度以下，并且还可以具有多个字线结构，在相应的一个位结构中位于磁性材料膜两侧的加热部分。这些位结构被充分热隔离，以允许相邻字线或位结构中的选定电流或两者都选择性地加热位结构以接近临界温度。这种钻头结构可以具有三个磁性材料层，每个磁性材料层具有其自身的临界温度以维持而不保持其磁性。

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