专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5068203A Method for forming thin silicon membrane or beam 失效
标题翻译：形成薄硅膜或光束的方法
公开(公告)号：US5068203A
公开(公告)日：1991-11-26
申请号：US577656
申请日：1990-09-04
申请人： James H. Logsdon , Steven E. Staller , David W. De Roo , Gerold W. Neudeck
发明人： James H. Logsdon , Steven E. Staller , David W. De Roo , Gerold W. Neudeck
IPC分类号： G01P15/12 , G01L9/00 , G01P15/08 , H01L21/205 , H01L29/84
CPC分类号： G01P15/0802 , G01L9/0042 , Y10T29/49103
摘要： A method is disclosed for forming thin, suspended membranes of epitaxial silicon material. Silicon oxide strips having a predetermined thickness are first formed on a silicon substrate. The gap, or spacing, between adjaceant beams is preferably less than or equal to about 1.4 times the thickness of the silicon oxide strip. The underlying silicon substrate is exposed within these gaps in the silicon oxide layer, thereby the gaps provide a seed hole for subsequent epitaxial growth from the silicon substrate. Epitaxial silicon is grown through the seed holes and then allowed to grow laterally over the silicon oxide strips to form a continuous layer of epitaxial silicon over the silicon oxide strips. The backside of the silicon substrate, or surface opposite the surface having the silicon oxide strips, is then masked to delineate the desired diaphragm and microbridge pattern. The silicon is etched conventionally from the backside. Etching is substantially terminated automatically by the presence of the silicon oxide strips. The thin, single crystal silicon membranes are suitable for use as diaphragms and microbridges in a microaccelerometers or pressure sensor.

2. 发明授权

US5284057A Microaccelerometer having low stress bonds and means for preventing excessive Z-axis deflection 失效
标题翻译：具有低应力结合的微加速器和用于防止过大的Z轴偏转的装置
公开(公告)号：US5284057A
公开(公告)日：1994-02-08
申请号：US976100
申请日：1992-11-13
申请人： Steven E. Staller , David W. De Roo
发明人： Steven E. Staller , David W. De Roo
IPC分类号： G01P15/12 , G01P15/08
CPC分类号： G01P15/0802 , G01P2015/084 , Y10S73/01
摘要： A microaccelerometer is provided which has a silicon substrate bonded to a silicon capping plate and silicon back plate, wherein the bonds between the three silicon wafers are characterized by a relatively low residual stress level over a wide temperature range. The bonds are formed by means of an appropriate adhesive at a relatively low temperature without degradation to the microaccelerometer. The bonds between the silicon wafers also provide stress relief during use and packaging of the microaccelerometer. With this invention, the damping distance for the proof mass of the microaccelerometer is accurately controllable and stop means are provided for preventing excessive deflection of the proof mass in a direction perpendicular to the plane of the microaccelerometer.
摘要翻译：提供了一种微加速度计，其具有结合到硅封盖板和硅背板的硅衬底，其中三个硅晶片之间的结合的特征在于在宽的温度范围内具有相对较低的残余应力水平。这些键在相对较低的温度下通过适当的粘合剂形成，而不会降解到微加速度计。硅晶片之间的结合也在微加速度计的使用和封装期间提供应力消除。利用本发明，微加速度计的检验质量块的阻尼距离是可以精确控制的，并且提供停止装置以防止证明物质在垂直于微加速度计平面的方向上的过度偏转。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式