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    • 1. 发明授权
    • Measuring circuit and a method for determining a characteristic of the impedance of a complex impedance element for facilitating characterization of the impedance thereof
    • 测量电路和用于确定复阻抗元件的阻抗的特性以便于表征其阻抗的方法
    • US07555394B2
    • 2009-06-30
    • US11492606
    • 2006-07-24
    • James F. CaffreyColm F. SlatteryAlbert C. O'GradyColin Gerard LydenDonal P. GeraghtySean Smith
    • James F. CaffreyColm F. SlatteryAlbert C. O'GradyColin Gerard LydenDonal P. GeraghtySean Smith
    • G01R25/00G01R27/28
    • G01R27/02
    • A single chip integrated circuit measuring circuit (1) for determining a characteristic of the impedance of an external complex impedance circuit (2) for facilitating characterization of the impedance of the complex impedance circuit (2) comprises a signal generating circuit (7) for generating a variable frequency stimulus signal for applying to the complex impedance circuit (2). A first receiving circuit (10) receives a response signal from the complex impedance circuit (2) in response to the stimulus signal and conditions the response signal. A first analog-to-digital converter (68) converts the conditioned response signal to a first digital output signal, which is read from the first analog-to-digital converter (68) through a first digital output port (14). The response signal from the complex impedance circuit (2) is a current signal, and a current to voltage converter circuit (64) converts the response signal to a voltage signal. A first RMS to DC level converting circuit (70) converts the AC voltage of the response signal to a DC voltage level, and a fourth multiplexer (67) selectively applies the voltage response signal or the DC voltage level signal to the first analog-to-digital converter (68), depending on whether it is desired that the first digital output signal should be indicative of the phase shift or amplitude change in the response signal relative to the stimulus signal. A second receiving circuit (20) receives the stimulus signal, and similarly converts the stimulus signal to a second digital output signal for facilitating comparison of the response signal with the stimulus signal.
    • 一种单芯片集成电路测量电路(1),用于确定外部复阻抗电路(2)的阻抗特性,以便于表征复阻抗电路(2)的阻抗,其特征在于包括一个信号发生电路(7) 用于施加到复阻抗电路(2)的可变频率刺激信号。 第一接收电路(10)响应于激励信号接收来自复阻抗电路(2)的响应信号并且对响应信号进行调节。 第一模数转换器(68)将经调节的响应信号转换成通过第一数字输出端口(14)从第一模数转换器(68)读取的第一数字输出信号。 来自复阻抗电路(2)的响应信号是电流信号,并且电流 - 电压转换器电路(64)将响应信号转换为电压信号。 第一RMS至DC电平转换电路(70)将响应信号的AC电压转换为DC电压电平,第四多路复用器(67)选择性地将电压响应信号或DC电压电平信号施加到第一模数转换器 数字转换器(68),这取决于第一数字输出信号是否应当指示响应信号相对于激励信号的相移或幅度变化。 第二接收电路(20)接收刺激信号,并且类似地将激励信号转换为第二数字输出信号,以便于响应信号与刺激信号的比较。
    • 2. 发明授权
    • Integrated MOS one-way isolation coupler and a semiconductor chip having an integrated MOS isolation one-way coupler located thereon
    • 集成MOS单向隔离耦合器和位于其上的集成MOS隔离单向耦合器的半导体芯片
    • US07319261B1
    • 2008-01-15
    • US10721039
    • 2003-11-21
    • James Anthony PowerMichael Anthony O'NeillColin Gerard Lyden
    • James Anthony PowerMichael Anthony O'NeillColin Gerard Lyden
    • H01L29/82
    • H01L27/22H01L23/5227H01L27/0617H01L28/10H01L2924/0002H01L2924/00
    • A MOS isolation coupler is formed on a semiconductor chip by a CMOS process and comprises an inductor coil for generating a magnetic field in response to an input signal applied to terminals thereof. A MAGFET having a split drain formed by respective drain portions is formed on the semiconductor chip below the inductor coil, so that a current difference is induced between the drain currents in the drain portions which is proportional to the strength of the magnetic field generated by the inductor coil resulting from the input signal. The MAGFET is formed prior to the inductor coil. An oxide isolating layer is provided over the MAGFET, and the inductor coil is formed on the oxide layer. The depth of the oxide layer is sufficient for providing the desired amount of electrical isolation, while at the same time locating the inductor coil sufficiently close to the MAGFET so that the magnetic field generated by the inductor coil, extending axially through the inductor coil cuts the channel of the MAGFET substantially perpendicularly.
    • MOS隔离耦合器通过CMOS工艺在半导体芯片上形成,并且包括用于响应于施加到其端子的输入信号而产生磁场的电感线圈。 在电感线圈下方的半导体芯片上形成具有由相应的漏极部分形成的分离漏极的MAGFET,从而在漏极部分中的漏极电流之间产生电流差异,该漏极电流与由 由输入信号产生的电感线圈。 在电感线圈之前形成MAGFET。 在MAGFET上设置氧化物隔离层,在氧化物层上形成电感线圈。 氧化物层的深度足以提供所需量的电隔离,同时将电感线圈定位成足够靠近MAGFET,使得由电感线圈产生的磁场沿轴向延伸穿过电感线圈切断 MAGFET的通道基本垂直。
    • 4. 发明授权
    • Method for one-way coupling an input signal to an integrated circuit
    • 将输入信号单向耦合到集成电路的方法
    • US07419838B2
    • 2008-09-02
    • US11985541
    • 2007-11-15
    • James Anthony PowerMichael Anthony O'NeillColin Gerard Lyden
    • James Anthony PowerMichael Anthony O'NeillColin Gerard Lyden
    • H01L21/00
    • H01L27/22H01L23/5227H01L27/0617H01L28/10H01L2924/0002H01L2924/00
    • A method for one-way coupling an input signal to an integrated circuit on a semiconductor chip with the integrated circuit electrically isolated from the input signal comprises forming a MOS isolation coupler on the semiconductor chip by a CMOS process. The MOS isolation coupler comprises an inductor coil for generating a magnetic field in response to an input signal applied to terminals thereof. A MAGFET having a split drain formed by respective drain portions is formed on the semiconductor chip below the inductor coil, so that a current difference is induced between the drain currents in the drain portions which is proportional to the strength of the magnetic field generated by the inductor coil resulting from the input signal. The MAGFET is formed prior to the inductor coil. An oxide isolating layer is provided over the MAGFET, and the inductor coil is formed on the oxide layer. The depth of the oxide layer is sufficient for providing the desired amount of electrical isolation, while at the same time locating the inductor coil sufficiently close to the MAGFET so that the magnetic field generated by the inductor coil, extending axially through the inductor coil cuts the channel of the MAGFET substantially perpendicularly.
    • 将输入信号单向耦合到具有与输入信号电隔离的集成电路的半导体芯片上的集成电路的方法包括通过CMOS工艺在半导体芯片上形成MOS隔离耦合器。 MOS隔离耦合器包括用于响应于施加到其端子的输入信号而产生磁场的电感线圈。 在电感线圈下方的半导体芯片上形成具有由相应的漏极部分形成的分离漏极的MAGFET,从而在漏极部分中的漏极电流之间产生电流差异,该漏极电流与由 由输入信号产生的电感线圈。 在电感线圈之前形成MAGFET。 在MAGFET上设置氧化物隔离层,在氧化物层上形成电感线圈。 氧化物层的深度足以提供所需量的电隔离,同时将电感线圈定位成足够靠近MAGFET,使得由电感线圈产生的磁场沿轴向延伸穿过电感线圈切断 MAGFET的通道基本垂直。
    • 5. 发明授权
    • INL curve correction in a pipeline ADC
    • 管线ADC中的INL曲线校正
    • US07348906B2
    • 2008-03-25
    • US11224432
    • 2005-09-12
    • John J. O'DonnellColin Gerard LydenDavid G. Nairn
    • John J. O'DonnellColin Gerard LydenDavid G. Nairn
    • H03M1/20
    • H03M1/0641H03M1/069H03M1/167H03M3/424
    • The present invention relates to a method and system for reducing integral non linearity errors in a pipeline Analog to Digital Converter (ADC). The invention provides in a first embodiment a method comprising the steps of: adding an analog dither signal to the analog input signal of a pipeline Analog to Digital Converter, and converting the analog input signal to a digital output signal by means of the pipeline Analog to Digital Converter. The amplitude of the analog dither signal is determined by the architecture of the Analog to Digital Converter. The invention also provides in a second embodiment a circuit comprising a pipeline analog to digital converter for converting an analog input signal to a digital output signal and a feedback circuit coupled to the converter such that the digital output signal is adapted to have an average non linearity error value of about zero LSBs.
    • 本发明涉及用于减少管线模数转换器(ADC)中的积分非线性误差的方法和系统。 本发明在第一实施例中提供了一种方法,包括以下步骤:将模拟抖动信号添加到流水线模数转换器的模拟输入信号,并通过管线将模拟输入信号转换为数字输出信号模拟到 数字转换器 模拟抖动信号的幅度由模数转换器的架构决定。 本发明还在第二实施例中提供一种包括用于将模拟输入信号转换为数字输出信号的流水线模数转换器和耦合到转换器的反馈电路的电路,使得数字输出信号适于具有平均非线性度 误差值约零LSB。