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    • 1. 发明授权
    • Control of stress in metal films by controlling the atmosphere during film deposition
    • 通过控制膜沉积过程中的气氛来控制金属膜中的应力
    • US07122872B2
    • 2006-10-17
    • US10441458
    • 2003-05-20
    • James F. BaileyHo Bun ChanLouis T. GomezMartin Haueis
    • James F. BaileyHo Bun ChanLouis T. GomezMartin Haueis
    • H01L21/14
    • B81B3/0072B81C2201/017H01L21/2855
    • Materials such as titanium are vapor-deposited in the presence of, e.g., oxygen to form a film on a substrate, such as to provide an adhesion layer between a silicon movable structure in an optical MEMS device and a gold layer serving as a reflecting surface. The resulting film contains titanium and oxygen. Varying the conditions under which the film is deposited varies the intrinsic stress of the film, which varies the change in substrate shape caused by the presence of the film. A film having a desired intrinsic stress may be obtained by control of the oxygen partial pressure when the film is deposited. In one embodiment, the oxygen partial pressure in the atmosphere present during titanium deposition is greater than about 2×10−7 Torr, and preferably between about 1×10−6 Torr and about 2×10−6 Torr.
    • 诸如钛的材料在例如氧的存在下气相沉积以在衬底上形成膜,以便在光学MEMS器件中的硅可移动结构和用作反射表面的金层之间提供粘附层 。 所得膜含有钛和氧。 改变沉积膜的条件改变膜的固有应力,这改变了由于膜的存在引起的衬底形状的变化。 具有期望的固有应力的膜可以通过控制膜沉积时的氧分压来获得。 在一个实施例中,在钛沉积期间存在的气氛中的氧分压大于约2×10 -7乇,优选约1×10 -6乇至约2×10乇, SUP> -6 Torr。