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1. 发明授权

US08271910B2 EMF correction model calibration using asymmetry factor data obtained from aerial images or a patterned layer 有权
标题翻译：使用从空间图像或图案层获得的不对称因子数据进行EMF校正模型校准
公开(公告)号：US08271910B2
公开(公告)日：2012-09-18
申请号：US12748513
申请日：2010-03-29
申请人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
发明人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , G03F1/70 , G03F7/70283 , G03F7/70441
摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.
摘要翻译：提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征。

2. 发明申请

US20110239169A1 EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER 有权
标题翻译： EMF校正模型校准使用不对称因子数据从空中图像或图形层
公开(公告)号：US20110239169A1
公开(公告)日：2011-09-29
申请号：US12748513
申请日：2010-03-29
申请人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
发明人： Jaione Tirapu-Azpiroz , Timothy A. Brunner , Michael S. Hibbs , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/38 , G03F1/70 , G03F7/70283 , G03F7/70441
摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.
摘要翻译：提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征。

3. 发明授权

US06950183B2 Apparatus and method for inspection of photolithographic mask 失效
标题翻译：用于光刻掩模检查的装置和方法
公开(公告)号：US06950183B2
公开(公告)日：2005-09-27
申请号：US10248808
申请日：2003-02-20
申请人： Timothy A. Brunner , Michael S. Hibbs , Christopher J. Progler
发明人： Timothy A. Brunner , Michael S. Hibbs , Christopher J. Progler
IPC分类号： G01N21/956 , G01N21/88
CPC分类号： G01N21/95692
摘要： A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask. Subsequently, the method includes inspecting the exposed pattern subfield on the test substrate for defects in the photolithographic mask.
摘要翻译：用于检查用于在光刻成像中投影图案的掩模的方法包括首先提供其上具有图案场的光刻掩模，其中在正常生产中使用图案通过缩小投影仪作为缩小图案转印在生产基板上，并且提供可移动与该掩模相邻的场限定孔径，该孔径具有小于并且能够限定仅包括整个光刻掩模图案场的一部分的图案子场的场区域。该方法然后包括将场限定孔与仅包括整个光刻掩模图案场的一部分的图案子场对准。使用能量源，该方法包括将图案子场投射到测试基板上，并以通常暴露在生产基板上的尺寸与光刻掩模上的图案子场的实际尺寸之间的尺寸将图案子区域暴露在测试基板上。随后，该方法包括检查在光刻掩模中的缺陷的测试基板上的曝光图案子场。

4. 发明授权

US07642016B2 Phase calibration for attenuating phase-shift masks 失效
标题翻译：用于衰减相移掩模的相位校准
公开(公告)号：US07642016B2
公开(公告)日：2010-01-05
申请号：US11276232
申请日：2006-02-20
申请人： Michael S. Hibbs , Timothy A. Brunner
发明人： Michael S. Hibbs , Timothy A. Brunner
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/84 , G03F1/32
摘要： A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.
摘要翻译：用于衰减相位掩模的相位计量模式。该图案的相位误差可以通过空间图像测量确定为高精度。该模式可用于创建用于校准衰减相位掩模的相位计量设备的光学相位标准，或者作为产品掩模上的见证图案，以验证该掩模的相位精度。该图案包括有效的线间距比，并且可以使用显微镜或步进系统进行测试，或者可以使用用于0次衍射测量的检测器直接测量。

5. 发明授权

US5300786A Optical focus phase shift test pattern, monitoring system and process 失效
标题翻译：光学相移测试模式，监控系统和过程
公开(公告)号：US5300786A
公开(公告)日：1994-04-05
申请号：US967885
申请日：1992-10-28
申请人： Timothy A. Brunner , Michael S. Hibbs , Barbara B. Peck , Chrisopher A. Spence
发明人： Timothy A. Brunner , Michael S. Hibbs , Barbara B. Peck , Chrisopher A. Spence
IPC分类号： G01J9/00 , G03F1/00 , G03F1/26 , G03F7/20 , G03F7/207 , G03F9/00 , H01L21/027 , H01L21/66 , G01N21/86
CPC分类号： G03F9/7026 , G03F1/26 , G03F1/44 , G03F7/70591 , G03F7/70633 , G03F7/70641
摘要： A photolithography mask structure having a novel optical focus test pattern is described. The mask structure has a non-phase-shifted, transparent substrate and includes a phase shifter of other than 180.degree. disposed between spaced, parallel opposing lines such that an alternating pattern of non-phase-shifted material and phase-shifted material is defined transverse said parallel lines. When projected onto the surface of an object measurable shifts of the test pattern corresponds in direction and magnitude with the extent of system defocus. Various alternating test pattern embodiments are presented, all of which include at least one phase shift window of other than 180.degree. in relation to the mask substrate. Further, a monitoring system and a monitoring process are discussed employing the presented mask structures.
摘要翻译：描述具有新的光学聚焦测试图案的光刻掩模结构。掩模结构具有非相移透明基板，并且包括设置在间隔开的平行相对线之间的180度以外的移相器，使得非相移材料和相移材料的交替图案被限定为横向说平行线。当投影到物体的表面上时，测试图案的可测量位移在方向和大小上与系统散焦的程度相对应。呈现了各种交替的测试图案实施例，所有这些都包括相对于掩模基板的180度以外的至少一个相移窗口。此外，使用所提出的掩模结构来讨论监视系统和监视过程。

6. 发明申请

US20080182180A1 PELLICLE FILM OPTIMIZED FOR IMMERSION LITHOGRAPHY SYSTEMS WITH NA>1 有权
标题翻译：优化的薄膜电影，用于具有NA> 1的倾斜光刻系统
公开(公告)号：US20080182180A1
公开(公告)日：2008-07-31
申请号：US11669175
申请日：2007-01-31
申请人： Timothy A. Brunner , Michael S. Hibbs
发明人： Timothy A. Brunner , Michael S. Hibbs
IPC分类号： B32B7/00 , G03F5/00
CPC分类号： G03F1/62 , G03F7/11 , Y10T428/24
摘要： An optical pellicle to protect a photomask from particulate contamination during semiconductor lithography is provided which has enhanced transparency and operational characteristics. The pellicle utilizes alternating layers of a transparent polymer and a transparent inorganic layer to form pellicles which have high transmission properties and high strength. In a preferred pellicle, a three-layer pellicle is provided having a transparent inorganic layer sandwiched between two polymer layers. A five-layer pellicle is also provided with the outer layers and a middle layer being polymer layers and the inner layers an inorganic material. The preferred polymer layer is a perfluorinated polymer such as Teflon® and the preferred inorganic material is silicon dioxide. The pellicle of the invention provides light transmission of greater than 0.99% at incident light angles up to arcsine 0.45.
摘要翻译：提供了在半导体光刻期间保护光掩模免受颗粒污染的光学防护薄膜，其具有增强的透明度和操作特性。防护薄膜组件利用透明聚合物和透明无机层的交替层来形成具有高透射性和高强度的薄膜。在优选的防护薄膜组件中，提供三层薄膜，其具有夹在两个聚合物层之间的透明无机层。五层防护薄膜也设有外层，中间层是聚合物层，内层是无机材料。优选的聚合物层是全氟化聚合物，例如Teflon，优选的无机材料是二氧化硅。本发明的防护薄膜组件在入射光角直至反正弦0.45时提供大于0.99％的透光率。

7. 发明申请

US20070196741A1 Phase Calibration for Attenuating Phase-Shift Masks 失效
标题翻译：衰减相移掩模的相位校准
公开(公告)号：US20070196741A1
公开(公告)日：2007-08-23
申请号：US11276232
申请日：2006-02-20
申请人： Michael S. Hibbs , Timothy A. Brunner
发明人： Michael S. Hibbs , Timothy A. Brunner
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/84 , G03F1/32
摘要： A phase metrology pattern for attenuating phase masks. The phase error of this pattern can be determined to high accuracy by aerial image measurements. This pattern can be used to create an optical phase standard for calibrating phase metrology equipment for attenuated phase masks, or as a witness pattern on a product mask to verify the phase accuracy of that mask. The pattern includes an effective line to space ratio and can be tested using a microscope or stepper system or can be measured directly using a detector for the 0 order diffraction measurement.
摘要翻译：用于衰减相位掩模的相位计量模式。该图案的相位误差可以通过空间图像测量确定为高精度。该模式可用于创建用于校准衰减相位掩模的相位计量设备的光学相位标准，或者作为产品掩模上的见证图案，以验证该掩模的相位精度。该图案包括有效的线间距比，并且可以使用显微镜或步进系统进行测试，或者可以使用用于0次衍射测量的检测器直接测量。

8. 发明授权

US08110321B2 Method of manufacture of damascene reticle 有权
标题翻译：镶嵌光罩的制造方法
公开(公告)号：US08110321B2
公开(公告)日：2012-02-07
申请号：US11749384
申请日：2007-05-16
申请人： Kevin S. Petrarca , Donald F. Canaperi , Mahadevaiyer Krishnan , Rebecca D. Mih , Steven Steen , Henry Grabarz , Michael S. Hibbs
发明人： Kevin S. Petrarca , Donald F. Canaperi , Mahadevaiyer Krishnan , Rebecca D. Mih , Steven Steen , Henry Grabarz , Michael S. Hibbs
IPC分类号： G03F1/16 , B24B5/00
CPC分类号： G03F1/00 , G03F1/26 , G03F1/50
摘要： A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.
摘要翻译：光学投影掩模版的制造方法采用镶嵌工艺。第一特征凹槽被蚀刻到透射或透明的突出掩模掩模板中。然后，特征凹部用包括用于吸收光化辐射的部分透射材料和/或辐射吸收体的辐射透射率改性材料研磨。牺牲材料可以在填充凹部之前临时添加到凹部中，以提供与填充凹部的材料并置的间隙。此后，去除牺牲材料。然后将投影掩模平坦化，留下填充有透射率改性材料的特征凹部，以及任何期望的间隙。投影面罩被平坦化，同时保持在用抛光工具和浆料抛光过程中将其固定在位置的夹具中。

9. 发明授权

US06627361B2 Assist features for contact hole mask patterns 失效
标题翻译：辅助接触孔掩模图案的功能
公开(公告)号：US06627361B2
公开(公告)日：2003-09-30
申请号：US09901241
申请日：2001-07-09
申请人： Orest Bula , Michael S. Hibbs , Steven J. Holmes , Paul A. Rabidoux
发明人： Orest Bula , Michael S. Hibbs , Steven J. Holmes , Paul A. Rabidoux
IPC分类号： G03F900
CPC分类号： G03F1/36 , G03F7/095
摘要： An assist feature is formed on a lithographic reticle or mask using a hybrid resist and an exposure dose such that only an annular area is effectively exposed having a width that is potentially less than the minimum feature size that can be resolved by the mask exposure tool to simultaneously or sequentially form both a feature of interest and an assist feature for enhancing imaging of the feature of interest when the feature is printed to a wafer. Since the assist feature can be imaged simultaneously with the feature of interest or multiple assist features imaged concurrently, possibly between closely spaced features, data volume and mask writing time are greatly reduced. The invention is particularly applicable to the scaling of contact holes for connections to active devices in extremely high density integrated circuits.
摘要翻译：使用混合抗蚀剂和曝光剂量在光刻掩模版或掩模上形成辅助特征，使得只有环形区域被有效地暴露，其宽度可能小于可由掩模曝光工具解析的最小特征尺寸，同时或顺序地形成感兴趣的特征和当将特征印刷到晶片时增强感兴趣特征的成像的辅助特征。由于可以与感兴趣的特征或同时成像的多个辅助特征（可能在紧密间隔的特征之间）同时成像辅助特征，所以数据量和掩模写入时间被大大减少。本发明特别适用于用于连接到极高密度集成电路中的有源器件的接触孔的缩放。

10. 发明授权

US6110624A Multiple polarity mask exposure method 失效
标题翻译：多极性掩模曝光方法
公开(公告)号：US6110624A
公开(公告)日：2000-08-29
申请号：US225114
申请日：1999-01-04
申请人： Michael S. Hibbs , Timothy E. Neary , David S. O'Grady , Denis M. Rigaill
发明人： Michael S. Hibbs , Timothy E. Neary , David S. O'Grady , Denis M. Rigaill
IPC分类号： G03F7/095 , G03F7/20 , H05K3/06 , G03F9/00 , G03C5/00
CPC分类号： G03F7/095 , G03F7/2022 , G03F7/2037 , H05K3/064 , H05K2203/0505 , H05K2203/0577
摘要： A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.
摘要翻译：一种图案化掩模和在衬底上形成图案化掩模的方法，包括在衬底上形成第一抗蚀剂层，在第一抗蚀剂层上形成第二抗蚀剂层，使用对第一抗蚀剂层的能量选择性形成第一抗蚀剂以形成第一抗蚀剂层，并且使用对第二抗蚀剂层选择性的能量来形成第二抗蚀剂以形成第二图案化抗蚀剂，其中第一图案化抗蚀剂和第二图案化抗蚀剂形成图案化掩模。

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