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1. 发明申请

US20090242975A1 Vertical pillar transistor 有权
标题翻译：立柱晶体管
公开(公告)号：US20090242975A1
公开(公告)日：2009-10-01
申请号：US12382898
申请日：2009-03-26
申请人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L27/10882 , H01L21/76232 , H01L21/823481 , H01L21/823487 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： A vertical pillar transistor may include a plurality of lower pillars, a plurality of upper pillars, a first insulation part, a second insulation part and a word line. The plurality of lower pillars protrudes substantially perpendicular to a substrate and is defined by a plurality of trenches. The plurality of lower pillars extends along a second direction and may be separated from each other along a first direction substantially perpendicular to the second direction. The plurality of upper pillars may be formed on the plurality of lower pillars. The plurality of upper pillars has a width substantially smaller than that of the plurality of lower pillars. The first insulation part has a substantially uniform thickness on a sidewall of each of the plurality of lower pillars. The second insulation part may be formed on the first insulation part to fill a gap between the adjacent upper pillars. The word line may be formed on the second insulation part and may extend between facing sidewalls of the adjacent pair of upper pillars along the first direction.
摘要翻译：垂直柱状晶体管可以包括多个下部支柱，多个上部支柱，第一绝缘部分，第二绝缘部分和字线。多个下支柱基本上垂直于基板突出并且由多个沟槽限定。多个下柱沿着第二方向延伸并且可以沿着基本上垂直于第二方向的第一方向彼此分离。多个上柱可以形成在多个下支柱上。多个上支柱具有比多个下支柱的宽度更小的宽度。第一绝缘部件在多个下支柱中的每一个的侧壁上具有基本均匀的厚度。第二绝缘部件可以形成在第一绝缘部分上以填充相邻的上部支柱之间的间隙。字线可以形成在第二绝缘部分上，并且可以沿着第一方向在相邻的一对上柱的相对侧壁之间延伸。

2. 发明申请

US20090250736A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20090250736A1
公开(公告)日：2009-10-08
申请号：US12385433
申请日：2009-04-08
申请人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L29/94 , H01L29/78
CPC分类号： H01L27/0688 , H01L21/8221
摘要： In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.
摘要翻译：在半导体器件和相关方法中，半导体器件包括衬底，衬底上的绝缘层，绝缘层上的导电结构，导电结构包括至少一种金属硅化物膜图案，导电结构上的半导体图案，所述半导体图案从所述导电结构向上突出，栅电极至少部分地封装所述半导体图案，所述栅电极与所述导电结构间隔开，所述半导体图案的下部的第一杂质区域和所述第二杂质区域在半导体图案的上部。

3. 发明授权

US08247856B2 Semiconductor device including a capacitor electrically connected to a vertical pillar transistor 有权
标题翻译：半导体器件包括电连接到垂直柱晶体管的电容器
公开(公告)号：US08247856B2
公开(公告)日：2012-08-21
申请号：US12728596
申请日：2010-03-22
申请人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L27/06
CPC分类号： H01L27/10817 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L28/91 , H01L29/78
摘要： A semiconductor device includes a first transistor, a second transistor, an insulation interlayer pattern and a capacitor. The first transistor is formed in a first region of a substrate. The first transistor has a pillar protruding upwardly from the substrate and an impurity region provided in an upper portion of the pillar. The second transistor is formed in a second region of the substrate. The insulation interlayer pattern is formed on the first region and the second region to cover the second transistor and expose an upper surface of the pillar. The insulation interlayer pattern has an upper surface substantially higher than the upper surface of the pillar in the first region. The capacitor is formed on the impurity region in the upper portion of the pillar and is electrically connected to the impurity region.
摘要翻译：半导体器件包括第一晶体管，第二晶体管，绝缘层间图案和电容器。第一晶体管形成在衬底的第一区域中。第一晶体管具有从基板向上突出的柱和设置在柱的上部的杂质区。第二晶体管形成在衬底的第二区域中。绝缘层间图案形成在第一区域和第二区域上以覆盖第二晶体管并暴露柱的上表面。绝缘层间图案具有比第一区域中的柱的上表面大得多的上表面。电容器形成在柱的上部的杂质区上并与杂质区电连接。

4. 发明申请

US20120070950A1 Method of Manufacturing a Semiconductor Device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120070950A1
公开(公告)日：2012-03-22
申请号：US13306421
申请日：2011-11-29
申请人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Kang-Uk Kim
发明人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Kang-Uk Kim
IPC分类号： H01L21/8242
CPC分类号： H01L29/0847 , H01L21/82385 , H01L21/823885 , H01L27/10823 , H01L27/10894 , H01L27/10897 , H01L29/0692 , H01L29/66666 , H01L29/7827
摘要： A semiconductor device includes a substrate having a first area and a second area, a first active structure disposed in the first area, a second active structure disposed in the second area, a first transistor disposed in the first area and a second transistor disposed in the second area. The second active structure may have a height substantially the same as a height of the first active structure. The first transistor includes a first gate structure enclosing an upper portion of the first active structure, a first impurity region formed at a lower portion of the first active structure, and a second impurity region formed at the upper portion of the first active structure. The second transistor includes a second gate structure formed on the second active structure and third impurity regions formed at an upper portion of the second active structure.
摘要翻译：半导体器件包括具有第一区域和第二区域的衬底，设置在第一区域中的第一有源结构，设置在第二区域中的第二有源结构，设置在第一区域中的第一晶体管和设置在第一区域中的第二晶体管第二区。第二活性结构可以具有与第一活性结构的高度基本相同的高度。第一晶体管包括封装第一有源结构的上部的第一栅极结构，形成在第一有源结构的下部的第一杂质区和形成在第一有源结构的上部的第二杂质区。第二晶体管包括形成在第二有源结构上的第二栅极结构和形成在第二有源结构的上部的第三杂质区。

5. 发明申请

US20110183483A1 Semiconductor device and method of manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110183483A1
公开(公告)日：2011-07-28
申请号：US13064628
申请日：2011-04-05
申请人： Kang-Uk Kim , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
发明人： Kang-Uk Kim , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
IPC分类号： H01L21/336
CPC分类号： H01L21/823487 , H01L21/823456
摘要： In a semiconductor device, the semiconductor device may include a first active structure, a first gate insulation layer, a first gate electrode, a first impurity region, a second impurity region and a contact structure. The first active structure may include a first lower pattern in a first region of a substrate and a first upper pattern on the first lower pattern. The first gate insulation layer may be formed on a sidewall of the first upper pattern. The first gate electrode may be formed on the first gate insulation layer. The first impurity region may be formed in the first lower pattern. The second impurity region may be formed in the first upper pattern. The contact structure may surround an upper surface and an upper sidewall of the first upper pattern including the second impurity region. Accordingly, the contact resistance between the contact structure and the second impurity region may be decreased and structural stability of the contact structure may be improved.
摘要翻译：在半导体器件中，半导体器件可以包括第一有源结构，第一栅极绝缘层，第一栅极电极，第一杂质区域，第二杂质区域和接触结构。第一有源结构可以包括在衬底的第一区域中的第一下部图案和第一下部图案上的第一上部图案。第一栅极绝缘层可以形成在第一上部图案的侧壁上。第一栅电极可以形成在第一栅极绝缘层上。第一杂质区域可以形成在第一下部图案中。第二杂质区域可以形成在第一上部图案中。接触结构可以围绕第一上部图案的上表面和上侧壁包括第二杂质区域。因此，可以降低接触结构和第二杂质区之间的接触电阻，并且可以提高接触结构的结构稳定性。

6. 发明授权

US07943978B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07943978B2
公开(公告)日：2011-05-17
申请号：US12458262
申请日：2009-07-07
申请人： Kang-Uk Kim , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
发明人： Kang-Uk Kim , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/823487 , H01L21/823456
摘要： In a semiconductor device, the semiconductor device may include a first active structure, a first gate insulation layer, a first gate electrode, a first impurity region, a second impurity region and a contact structure. The first active structure may include a first lower pattern in a first region of a substrate and a first upper pattern on the first lower pattern. The first gate insulation layer may be formed on a sidewall of the first upper pattern. The first gate electrode may be formed on the first gate insulation layer. The first impurity region may be formed in the first lower pattern. The second impurity region may be formed in the first upper pattern. The contact structure may surround an upper surface and an upper sidewall of the first upper pattern including the second impurity region. Accordingly, the contact resistance between the contact structure and the second impurity region may be decreased and structural stability of the contact structure may be improved.
摘要翻译：在半导体器件中，半导体器件可以包括第一有源结构，第一栅极绝缘层，第一栅极电极，第一杂质区域，第二杂质区域和接触结构。第一有源结构可以包括在衬底的第一区域中的第一下部图案和第一下部图案上的第一上部图案。第一栅极绝缘层可以形成在第一上部图案的侧壁上。第一栅电极可以形成在第一栅极绝缘层上。第一杂质区域可以形成在第一下部图案中。第二杂质区域可以形成在第一上部图案中。接触结构可以围绕第一上部图案的上表面和上侧壁包括第二杂质区域。因此，可以降低接触结构和第二杂质区之间的接触电阻，并且可以提高接触结构的结构稳定性。

7. 发明申请

US20110220977A1 SEMICONDUCTOR DEVICES WITH BURIED BIT LINES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 有权
标题翻译：带有双绞线的半导体器件及制造半导体器件的方法
公开(公告)号：US20110220977A1
公开(公告)日：2011-09-15
申请号：US12760140
申请日：2010-04-14
申请人： Jae-Man Yoon , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim , Yong-Chul Oh
发明人： Jae-Man Yoon , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim , Yong-Chul Oh
IPC分类号： H01L27/108 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/108 , H01L21/84 , H01L27/10817 , H01L27/10876 , H01L27/10894 , H01L27/1203 , H01L29/7833
摘要： A semiconductor device, comprising: a vertical pillar transistor (VPT) formed on a silicon-on-insulator (SOI) substrate, the VPT including a body that has a lower portion and an upper portion, a source/drain node disposed at an upper end portion of the upper portion of the body and a drain/source node disposed at the lower portion of the body; a buried bit line (BBL) formed continuously on sidewalls and an upper surface of the lower portion, the BBL includes metal sificide; and a word line that partially enclosing the upper portion of the body of the VPT, wherein the BBL extends along a first direction and the word line extends in a second direction substantially perpendicular to the first direction. An offset region is disposed immediately beneath the word line.
摘要翻译：一种半导体器件，包括：形成在绝缘体上硅（SOI））衬底上的垂直立柱晶体管（VPT），所述VPT包括具有下部和上部的主体，设置在上部的源极/漏极节点本体的上部的端部和设置在主体的下部的排水/源节点; 在侧壁和下部的上表面上连续形成的埋置位线（BBL），BBL包括金属微孔; 以及字线，其部分地包围VPT的主体的上部，其中，BBL沿着第一方向延伸，并且字线在基本上垂直于第一方向的第二方向上延伸。偏移区域设置在字线的正下方。

8. 发明授权

US07999309B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07999309B2
公开(公告)日：2011-08-16
申请号：US12385433
申请日：2009-04-08
申请人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/0688 , H01L21/8221
摘要： In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern.
摘要翻译：在半导体器件和相关方法中，半导体器件包括衬底，衬底上的绝缘层，绝缘层上的导电结构，导电结构包括至少一种金属硅化物膜图案，导电结构上的半导体图案，所述半导体图案从所述导电结构向上突出，栅电极至少部分地封装所述半导体图案，所述栅电极与所述导电结构间隔开，所述半导体图案的下部的第一杂质区域和所述第二杂质区域在半导体图案的上部。

9. 发明授权

US07902026B2 Method of fabricating semiconductor device having vertical channel transistor 失效
标题翻译：制造具有垂直沟道晶体管的半导体器件的方法
公开(公告)号：US07902026B2
公开(公告)日：2011-03-08
申请号：US12314139
申请日：2008-12-04
申请人： Hyun-Woo Chung , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hyun-Woo Chung , Jae-Man Yoon , Yong-Chul Oh , Hui-Jung Kim , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66545 , H01L21/76237 , H01L27/10876 , H01L29/66666 , H01L29/7827
摘要： A method of fabricating a semiconductor device having a vertical channel transistor, the method including forming a hard mask pattern on a substrate, forming a preliminary active pillar by etching the substrate using the hard mask pattern as an etch mask, reducing a width of the preliminary active pillar to form an active pillar having a width less than that of the hard mask pattern, forming a lower source/drain region by implanting impurity ions into the substrate adjacent to the active pillar using the hard mask pattern as an ion implantation mask, and forming an upper source/drain region on the active pillar and vertically separated from the lower source/drain region.
摘要翻译：一种制造具有垂直沟道晶体管的半导体器件的方法，所述方法包括在衬底上形成硬掩模图案，通过使用硬掩模图案作为蚀刻掩模蚀刻衬底来形成预活性柱，从而减小初步活性柱以形成宽度小于硬掩模图案的有源柱，通过使用硬掩模图案作为离子注入掩模将杂质离子注入邻近有源柱的衬底中来形成下源极/漏极区域，以及在有源柱上形成上部源极/漏极区域，并与下部源极/漏极区域垂直分离。

10. 发明授权

US08623724B2 Method of manufacturing a semiconductor device including a capacitor electrically connected to a vertical pillar transistor 有权
标题翻译：制造半导体器件的方法，该半导体器件包括电连接到立柱晶体管的电容器
公开(公告)号：US08623724B2
公开(公告)日：2014-01-07
申请号：US13547318
申请日：2012-07-12
申请人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
发明人： Hui-Jung Kim , Yong-Chul Oh , Jae-Man Yoon , Hyun-Woo Chung , Hyun-Gi Kim , Kang-Uk Kim
IPC分类号： H01L21/8242
CPC分类号： H01L27/10817 , H01L27/10852 , H01L27/10876 , H01L27/10894 , H01L28/91 , H01L29/78
摘要： A semiconductor device includes a first transistor, a second transistor, an insulation interlayer pattern and a capacitor. The first transistor is formed in a first region of a substrate. The first transistor has a pillar protruding upwardly from the substrate and an impurity region provided in an upper portion of the pillar. The second transistor is formed in a second region of the substrate. The insulation interlayer pattern is formed on the first region and the second region to cover the second transistor and expose an upper surface of the pillar. The insulation interlayer pattern has an upper surface substantially higher than the upper surface of the pillar in the first region. The capacitor is formed on the impurity region in the upper portion of the pillar and is electrically connected to the impurity region.
摘要翻译：半导体器件包括第一晶体管，第二晶体管，绝缘层间图案和电容器。第一晶体管形成在衬底的第一区域中。第一晶体管具有从基板向上突出的柱和设置在柱的上部的杂质区。第二晶体管形成在衬底的第二区域中。绝缘层间图案形成在第一区域和第二区域上以覆盖第二晶体管并暴露柱的上表面。绝缘层间图案具有比第一区域中的柱的上表面大得多的上表面。电容器形成在柱的上部的杂质区上并与杂质区电连接。

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