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1. 发明授权

US08575601B2 Organic light-emitting display device and method of manufacturing the same 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US08575601B2
公开(公告)日：2013-11-05
申请号：US13183168
申请日：2011-07-14
申请人： Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Won-Kyu Lee , Jae-Beom Choi , Cheol-Ho Park
发明人： Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Won-Kyu Lee , Jae-Beom Choi , Cheol-Ho Park
IPC分类号： H01L51/00
CPC分类号： H01L27/1255 , H01L27/127 , H01L27/3262 , H01L27/3265
摘要： Disclosed is a method of manufacturing an organic light-emitting display device capable of improving efficiency of a laser generator used for crystallization of amorphous silicon. The method crystallizes amorphous silicon selectively to provide an organic light-emitting display device that includes channel area of a pixel contains polycrystalline silicon and storage area of the pixel contains amorphous silicon.
摘要翻译：公开了一种能够提高用于非晶硅结晶的激光发生器的效率的有机发光显示装置的制造方法。该方法选择性地结晶非晶硅以提供包括含有多晶硅的像素的沟道面积和像素的存储区域包含非晶硅的有机发光显示装置。

2. 发明授权

US09236010B2 Array test device and array test method for organic light emitting display device and method for manufacturing the organic light emitting display device 有权
标题翻译：用于有机发光显示装置的阵列测试装置和阵列测试方法以及用于制造有机发光显示装置的方法
公开(公告)号：US09236010B2
公开(公告)日：2016-01-12
申请号：US13449181
申请日：2012-04-17
申请人： Jae-Beom Choi , Won-Kyu Lee , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
发明人： Jae-Beom Choi , Won-Kyu Lee , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
IPC分类号： G01R31/06 , G09G3/32 , G09G3/00
CPC分类号： G09G3/3233 , G09G3/006 , G09G2300/0819 , G09G2300/0852
摘要： An array test method of an organic light emitting diode (OLED) display substrate is provided. The OLED display substrate includes a plurality of pixel circuits. Each pixel circuit includes an anode, a first transistor for transmitting a data signal that controls an amount of light emission of an OLED according to a scan signal, a driving transistor for receiving the data signal, generating a driving current corresponding to the data signal, and transmitting the driving current to the OLED, and a second transistor for diode-connecting a gate electrode and a drain electrode of the driving transistor. The array test method includes: injecting electrons or holes that generate an initialization voltage into the anode by turning on the second transistor; radiating electron beams at the anode; and determining whether or not the driving transistor performs normal operation from an amount of secondary electrons emitted from the anode.
摘要翻译：提供了一种有机发光二极管（OLED）显示基板的阵列测试方法。 OLED显示基板包括多个像素电路。每个像素电路包括阳极，用于发送根据扫描信号控制OLED的发光量的数据信号的第一晶体管，用于接收数据信号的驱动晶体管，产生与数据信号相对应的驱动电流，并向OLED发送驱动电流，以及用于二极管连接驱动晶体管的栅电极和漏电极的第二晶体管。阵列测试方法包括：通过接通第二晶体管来注入向阳极产生初始化电压的电子或空穴; 在阳极处辐射电子束; 以及从所述阳极发出的二次电子的量确定所述驱动晶体管是否进行正常工作。

3. 发明申请

US20120056179A1 Photo sensor, method of manufacturing photo sensor, and display apparatus 审中-公开
标题翻译：光传感器，光传感器的制造方法以及显示装置
公开(公告)号：US20120056179A1
公开(公告)日：2012-03-08
申请号：US13137442
申请日：2011-08-16
申请人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L31/036 , H01L31/20
CPC分类号： H01L31/1872 , G02F1/13318 , H01L27/3269 , H01L31/1055 , Y02E10/50 , Y02P70/521
摘要： A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
摘要翻译：光传感器，光传感器的制造方法以及显示装置，所述光传感器包括基板; 在所述基板上的受光单元，所述受光单元包括非晶半导体材料; 第一相邻单元和第二相邻单元，其与所述光接收单元形成为一体，所述第一相邻单元和所述第二相邻单元由所述光接收单元彼此分离; 电连接到第一相邻单元的第一光电传感器电极; 和与第二相邻单元电连接的第二光电传感器电极，其中第一相邻单元和第二相邻单元中的至少一个包括晶体半导体材料。

4. 发明授权

US09159866B2 Photo sensor, method of manufacturing photo sensor, and display apparatus 有权
标题翻译：光传感器，光传感器的制造方法以及显示装置
公开(公告)号：US09159866B2
公开(公告)日：2015-10-13
申请号：US13916790
申请日：2013-06-13
申请人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Won-Kyu Lee , Jae-Hwan Oh , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L21/00 , H01L31/18 , H01L31/105 , G02F1/133 , H01L27/32
CPC分类号： H01L31/1872 , G02F1/13318 , H01L27/3269 , H01L31/1055 , Y02E10/50 , Y02P70/521
摘要： A photo sensor, a method of manufacturing the photo sensor, and a display apparatus, the photo sensor including a substrate; a light receiving unit on the substrate, the light receiving unit including an amorphous semiconductor material; a first adjacent unit and a second adjacent unit formed as one body with the light receiving unit, the first adjacent unit and the second adjacent unit being separated from each other by the light receiving unit; a first photo sensor electrode electrically connected to the first adjacent unit; and a second photo sensor electrode electrically connected to the second adjacent unit, wherein at least one of the first adjacent unit and the second adjacent unit includes a crystalline semiconductor material.
摘要翻译：光传感器，光传感器的制造方法以及显示装置，所述光传感器包括基板; 在所述基板上的受光单元，所述受光单元包括非晶半导体材料; 第一相邻单元和第二相邻单元，其与光接收单元形成为一体，第一相邻单元和第二相邻单元由光接收单元彼此分离; 电连接到第一相邻单元的第一光电传感器电极; 和与第二相邻单元电连接的第二光电传感器电极，其中第一相邻单元和第二相邻单元中的至少一个包括晶体半导体材料。

5. 发明授权

US08742413B2 Photosensor and method of manufacturing the same 有权
标题翻译：光电传感器及其制造方法
公开(公告)号：US08742413B2
公开(公告)日：2014-06-03
申请号：US13239627
申请日：2011-09-22
申请人： Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
发明人： Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
IPC分类号： H01L31/0264 , H01L31/20
CPC分类号： H01L31/1804 , H01L31/105 , H01L31/1055 , Y02E10/547 , Y02P70/521
摘要： In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.
摘要翻译：在光传感器及其制造方法中，光电传感器包括：形成在基板上的本征硅层; 与本征硅层在同一平面内形成的P型掺杂区域; 以及形成在本征硅层之上或之下的氧化物半导体层，并且与本征硅层的整个区域重叠。

6. 发明授权

US08673751B2 Laser crystallization system and method of manufacturing display apparatus using the same 有权
标题翻译：激光结晶体系及其制造方法
公开(公告)号：US08673751B2
公开(公告)日：2014-03-18
申请号：US13272114
申请日：2011-10-12
申请人： Jae-Hwan Oh , Jae-Beom Choi , Won-Kyu Lee , Young-Jin Chang , Seong-Hyun Jin
发明人： Jae-Hwan Oh , Jae-Beom Choi , Won-Kyu Lee , Young-Jin Chang , Seong-Hyun Jin
IPC分类号： H01L21/20
CPC分类号： H01L21/67115 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02678 , H01L21/02691 , H01L27/1285 , H01L27/3244 , H01L2227/323
摘要： A laser crystallization system and a method of manufacturing a display apparatus using the laser crystallization system are disclosed. In one embodiment, the system includes i) a mother substrate in which first, second, and third display regions and ii) a stage for supporting the mother substrate and moving in first and second directions perpendicular to each other. The embodiment also includes i) a first laser irradiation unit for irradiating a first laser beam having a width greater than or identical to a width of a side of one of the first, second, and third display regions in the first direction and ii) a second laser irradiation unit spaced apart from the first laser irradiation unit and irradiating a second laser beam having a width greater than or identical to the width of the one side in the first direction.
摘要翻译：公开了一种激光结晶系统和使用该激光结晶系统制造显示装置的方法。在一个实施例中，系统包括i）母基板，其中第一，第二和第三显示区域和ii）用于支撑母体基板并在彼此垂直的第一和第二方向上移动的平台。该实施例还包括i）第一激光照射单元，用于照射具有大于或等于第一方向上的第一，第二和第三显示区域之一的宽度的宽度的宽度的第一激光束，以及ii）第二激光照射单元，与第一激光照射单元间隔开，并且照射宽度大于或等于第一方向上的一侧的宽度的宽度的第二激光束。

7. 发明申请

US20120012568A1 Laser irradiation apparatus 有权
标题翻译：激光照射装置
公开(公告)号：US20120012568A1
公开(公告)日：2012-01-19
申请号：US13067611
申请日：2011-06-14
申请人： Won-Kyu Lee , Jae-Beom Choi , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
发明人： Won-Kyu Lee , Jae-Beom Choi , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
IPC分类号： B23K26/00
CPC分类号： H01L21/268 , B23K26/06
摘要： A laser irradiation apparatus for irradiating a laser beam to a semiconductor layer including a plurality of pixel areas, the apparatus includes a laser generator generating the laser beam, and an optical switching unit time-dividing the laser beam generated from the laser generator and transmitting a plurality of time-divided laser beams to a plurality of optical systems. The apparatus includes a first optical system of the plurality of optical systems that receives a first time-divided laser beam and irradiates a first laser slit beam along a first irradiation direction, and a second optical system of the plurality of optical systems that receives a second time-divided laser beam and irradiates a second laser slit beam along a second irradiation direction that is parallel with the first irradiation direction. The first laser slit beam and the second laser slit beam crystallize partial areas at a same location in the respective pixel areas.
摘要翻译：一种用于将激光照射到包括多个像素区域的半导体层的激光照射装置，该装置包括产生激光束的激光发生器和对从激光发生器产生的激光束进行时分的光开关单元，多个时分激光束到多个光学系统。该装置包括：多个光学系统的第一光学系统，其接收第一分时激光束并沿着第一照射方向照射第一激光狭缝光束;以及所述多个光学系统中的第二光学系统，并且沿着与第一照射方向平行的第二照射方向照射第二激光狭缝光束。第一激光狭缝光束和第二激光狭缝光束在相应像素区域中的相同位置处结晶部分区域。

8. 发明授权

US08865578B2 Method of manufacturing polycrystalline silicon layer, and method of manufacturing transistor having the polycrystalline silicon layer 有权
标题翻译：制造多晶硅层的方法以及制造具有多晶硅层的晶体管的方法
公开(公告)号：US08865578B2
公开(公告)日：2014-10-21
申请号：US13186974
申请日：2011-07-20
申请人： Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Jae-Beom Choi
发明人： Young-Jin Chang , Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Jae-Beom Choi
IPC分类号： H01L21/20 , H01L27/12 , H01L21/02
CPC分类号： H01L27/1214 , H01L21/02422 , H01L21/02532 , H01L21/02675 , H01L27/1285
摘要： An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.
摘要翻译：一个实施方案涉及制造多晶硅层的方法，该方法包括提供结晶衬底，所述结晶衬底在第一衬底上具有非晶硅层，提供反射衬底，所述反射衬底具有反射的第一区域其中没有反射面板的第二区域，将结晶衬底和反射衬底彼此配置，并且通过将激光束引导到结晶衬底和反射衬底上来选择性地使非晶硅层结晶，并且将激光束从反射面板。

9. 发明申请

US20130056710A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20130056710A1
公开(公告)日：2013-03-07
申请号：US13426733
申请日：2012-03-22
申请人： Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin , Se-Hun Park , June-Woo Lee , Kwang-Hae Kim , Jong-Hyun Choi , Kwan-Kyu Lee , Won-Kyu Lee , Jae-Beom Choi
发明人： Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin , Se-Hun Park , June-Woo Lee , Kwang-Hae Kim , Jong-Hyun Choi , Kwan-Kyu Lee , Won-Kyu Lee , Jae-Beom Choi
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L27/1255 , H01L27/3258 , H01L27/3265 , H01L51/5265 , H01L51/5268 , H01L2227/323
摘要： An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.
摘要翻译：一种有机发光显示装置，包括第一绝缘层，第一绝缘层上的第二绝缘层，包括凹凸部，第二绝缘层上的第三绝缘层，第三绝缘层上的像素电极，对置电极面对像素电极，以及像素电极和对置电极之间的有机发光层; 薄膜晶体管，包括有源层，栅电极和连接到有源层的源极/漏极，所述第一绝缘层位于所述有源层和所述栅电极之间，所述第二绝缘层位于所述栅电极与所述栅电极之间，源极/漏极; 以及电容器，其包括与栅电极相同的层上的下电极，与第三绝缘层相同的材料的电介质层，以及与像素电极同层的上电极。

10. 发明申请

US20120104382A1 Photo diode, method of manufacturing the photo-diode, and photo sensor including the photo diode 有权
标题翻译：光电二极管，制造光电二极管的方法，以及包含光电二极管的光电传感器
公开(公告)号：US20120104382A1
公开(公告)日：2012-05-03
申请号：US13137726
申请日：2011-09-08
申请人： Won-Kyu Lee , Jae-Beom Choi , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
发明人： Won-Kyu Lee , Jae-Beom Choi , Jae-Hwan Oh , Young-Jin Chang , Seong-Hyun Jin
IPC分类号： H01L31/0376
CPC分类号： H01L31/035272 , H01L31/105
摘要： A photo diode includes an intrinsic region on a substrate, a P+ doping region in a first portion of the intrinsic region, and an oxide semiconductor region. The oxide semiconductor region is spaced apart from the P+ doping region on a second portion of the intrinsic region and the second portion of the intrinsic region is different from the first portion of the intrinsic region.
摘要翻译：光电二极管包括衬底上的本征区域，本征区域的第一部分中的P +掺杂区域和氧化物半导体区域。氧化物半导体区域与本征区域的第二部分上的P +掺杂区域间隔开，本征区域的第二部分不同于本征区域的第一部分。

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