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1. 发明授权

US08703589B2 Flat panel display and method of manufacturing the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US08703589B2
公开(公告)日：2014-04-22
申请号：US13454965
申请日：2012-04-24
申请人： Cheol-Ho Park
发明人： Cheol-Ho Park
IPC分类号： H01L21/20 , H01L21/36 , H01L21/84
CPC分类号： H01L27/1262 , H01L27/1274
摘要： A flat panel display having a thin-film transistor (TFT) and a pixel unit and a method of manufacturing the same are disclosed. In one embodiment, the method includes forming a step difference layer having a relatively high step and a relatively low step on a substrate and forming an amorphous silicon layer on the step difference layer along a height shape of the step difference layer. The method further includes crystallizing the amorphous silicon layer into a crystalline silicon layer and polishing the crystalline silicon layer to form a planarized surface of the crystalline silicon layer having no height differences so that the crystalline silicon layer remains on a region corresponding to the low step and an active layer is formed. According to this method, crystallization protrusions are effectively removed from the active layer, and thus, stable brightness characteristics of the display apparatus are guaranteed.
摘要翻译：公开了一种具有薄膜晶体管（TFT）和像素单元的平板显示器及其制造方法。在一个实施例中，该方法包括在衬底上形成具有相对较高台阶和相对较低台阶的台阶差分层，并沿台阶差层的高度形状在台阶差层上形成非晶硅层。该方法还包括将非晶硅层结晶成晶体硅层并抛光晶体硅层以形成不具有高度差的晶体硅层的平坦化表面，使得晶体硅层保留在对应于低阶的区域上，形成有源层。根据该方法，从有源层有效地去除了结晶化突起，保证了显示装置的稳定的亮度特性。

2. 发明申请

US20120154257A1 DISPLAY DEVICE AND METHOD OF CRYSTALLIZING THE SAME 审中-公开
标题翻译：显示装置及其结晶方法
公开(公告)号：US20120154257A1
公开(公告)日：2012-06-21
申请号：US13301977
申请日：2011-11-22
申请人： Hyun-Been HWANG , Cheol-Ho Park , Kwon-Hyung Lee , Byoungkwon Choo , Minhwan Choi
发明人： Hyun-Been HWANG , Cheol-Ho Park , Kwon-Hyung Lee , Byoungkwon Choo , Minhwan Choi
IPC分类号： G09G3/20 , H01L33/08
CPC分类号： H01L27/1285 , H01L21/268
摘要： A display device includes an active region including a plurality of unit pixels, the unit pixels including first circuit regions and image display regions, first peripheral regions adjacent to the active region, the first peripheral region including a plurality of second circuit regions, the first circuit regions and the second circuit regions being arranged along same virtual straight lines, and second peripheral regions adjacent to the active region, the second peripheral region including a plurality of third circuit regions.
摘要翻译：显示装置包括包括多个单位像素的有源区域，包括第一电路区域和图像显示区域的单位像素，与有源区域相邻的第一周边区域，第一周边区域包括多个第二电路区域，第一电路区域和第二电路区域沿着相同的虚拟直线布置，以及与有源区域相邻的第二外围区域，第二外围区域包括多个第三电路区域。

3. 发明申请

US20120111267A1 Crystallization apparatus using sequential lateral solidification 有权
标题翻译：使用顺序横向凝固的结晶装置
公开(公告)号：US20120111267A1
公开(公告)日：2012-05-10
申请号：US13317694
申请日：2011-10-26
申请人： Cheol-Ho Park
发明人： Cheol-Ho Park
IPC分类号： B05C9/00 , B05C11/00
CPC分类号： B23K26/064 , H01L21/67115 , H01L27/1285
摘要： A crystallization apparatus that performs crystallization on a substrate using sequential lateral solidification (SLS) includes a laser generating device for emitting a laser beam, a first telescope lens module and a second telescope lens module at one side of the laser generating device for minimizing a divergent angle of a laser beam emitted by the laser generating device; and a main optical system at one side of the second telescope lens module for uniformizing and amplifying a laser beam transmitted through the second telescope lens module. The main optical system is rotatably formed with respect to the laser generating device.
摘要翻译：使用连续横向固化（SLS）在基板上进行结晶的结晶装置包括用于发射激光束的激光发生装置，第一望远镜透镜模块和第二望远镜透镜模块，其位于激光发生装置的一侧，以最小化发散由激光发生装置发射的激光束的角度; 以及在第二望远镜透镜模块的一侧的主光学系统，用于使透射通过第二望远镜透镜模块的激光束均匀化和放大。主光学系统相对于激光发生装置可旋转地形成。

4. 发明授权

US08163444B2 Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same 有权
标题翻译：用于使半导体层结晶的掩模和使用其使半导体层结晶的方法
公开(公告)号：US08163444B2
公开(公告)日：2012-04-24
申请号：US12321985
申请日：2009-01-27
申请人： Cheol-Ho Park
发明人： Cheol-Ho Park
IPC分类号： G03F1/00 , C30B25/12
CPC分类号： H01L21/0268 , B23K26/066 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1285 , Y10T428/24314
摘要： A mask for crystallizing a semiconductor layer includes a plurality of first main-slit portions, a plurality of second main-slit portions, upper slit portion and lower slit portion. The first main-slit portions extend along an inclined direction with respect to a first direction. The second main-slit portions are spaced apart from the first main-slit portions. The upper slit portion is disposed on the first main-slit portions along a second direction to be parallel to the first main-slit portions, and extends partway over the second main-slit portions to be longer than the first main-slit portions. The lower slit portion is disposed under the second main-slit portions along the second direction to be parallel to the second main-slit portions, and extends partway under the first main-slit portions to be longer than the second main-slit portions.
摘要翻译：用于使半导体层结晶的掩模包括多个第一主狭缝部分，多个第二主狭缝部分，上部狭缝部分和下部狭缝部分。第一主狭缝部分沿着相对于第一方向的倾斜方向延伸。第二主狭缝部分与第一主狭缝部分间隔开。上缝隙部分沿着与第一主狭缝部分平行的第二方向设置在第一主狭缝部分上，并且在第二主狭缝部分上方延伸成比第一主狭缝部分长。下狭缝部分沿着第二方向设置在第二主狭缝部分的下方以与第二主狭缝部分平行，并且在第一主狭缝部分的下方延伸以比第二主狭缝部分长。

5. 发明授权

US08952289B2 Laser crystallization apparatus and method for manufacturing thin film transistor array panel using the same 有权
标题翻译：激光结晶装置及使用其制造薄膜晶体管阵列面板的方法
公开(公告)号：US08952289B2
公开(公告)日：2015-02-10
申请号：US13761276
申请日：2013-02-07
申请人： Byoung-Kwon Choo , Cheol-Ho Park , Kwon-Hyung Lee , Sung-Chul Pyo
发明人： Byoung-Kwon Choo , Cheol-Ho Park , Kwon-Hyung Lee , Sung-Chul Pyo
IPC分类号： H01L21/00 , H01L21/67 , H01L21/02 , B23K26/06
CPC分类号： H01L21/67115 , B23K26/066 , H01L21/02532 , H01L21/02675 , H01L21/02691
摘要： Laser crystallization equipment includes a laser generator generating a laser beam, the laser beam being directed toward a processing target substrate, and a blade member over the processing target substrate, the blade member being configured to chop the laser beam with a predetermined width in two directions, wherein two ends of the laser beam chopped by the blade member are irradiated to the processing target substrate as diffraction light.
摘要翻译：激光结晶设备包括产生激光束的激光发生器，激光束朝向处理对象基板，以及在处理对象基板上的刀片部件，所述刀片部件被配置为以两个方向以预定宽度切割激光束其中由刀片部件切碎的激光束的两端作为衍射光照射到处理对象基板。

6. 发明申请

US20120299000A1 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS 有权
标题翻译：薄膜晶体管，其制造方法和有机发光显示装置
公开(公告)号：US20120299000A1
公开(公告)日：2012-11-29
申请号：US13462189
申请日：2012-05-02
申请人： Byoung-Kwon CHOO , Hyun-Been HWANG , Kwon-Hyung LEE , Cheol-Ho PARK
发明人： Byoung-Kwon CHOO , Hyun-Been HWANG , Kwon-Hyung LEE , Cheol-Ho PARK
IPC分类号： H01L33/08 , H01L21/336 , H01L29/786
CPC分类号： H01L29/78696 , H01L27/1296 , H01L29/78645
摘要： A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern.
摘要翻译：一种具有有源层图案的薄膜晶体管（TFT），所述有源层图案包括沿第一方向延伸的第一有源层图案; 第二有源层图案，其在所述第一方向上延伸并平行于所述第一有源层图案; 以及将第一有源层图案的第一端连接到第二有源层图案的第一端的第三有源层图案。

7. 发明申请

US20110143174A1 LITHIUM SECONDARY BATTERY AND METHOD OF CONTROLLING SHORT RESISTANCE THEREOF 有权
标题翻译：锂二次电池及其短路电阻的控制方法
公开(公告)号：US20110143174A1
公开(公告)日：2011-06-16
申请号：US12910636
申请日：2010-10-22
申请人： Joong-Heon KIM , Cheol-Ho Park , Jin-Uk Lee
发明人： Joong-Heon KIM , Cheol-Ho Park , Jin-Uk Lee
IPC分类号： H01M10/48 , H01M10/056
CPC分类号： H01M10/056 , H01M10/0525 , H01M10/0565 , H01M10/42
摘要： Provided is a lithium secondary battery including a positive electrode having a positive electrode active material, a negative electrode having a negative electrode active material, and a polymer electrolyte composition having a polymer electrolyte, a non-aqueous organic solvent, and a lithium salt. The content of the polymer electrolyte is 9 to 20 wt %, based on the total weight of the polymer electrolyte composition.
摘要翻译：提供一种锂二次电池，其包括具有正极活性物质的正极，具有负极活性物质的负极和具有高分子电解质，非水有机溶剂和锂盐的高分子电解质组合物。基于聚合物电解质组合物的总重量，聚合物电解质的含量为9〜20重量％。

8. 发明申请

US20100044685A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US20100044685A1
公开(公告)日：2010-02-25
申请号：US12413842
申请日：2009-03-30
申请人： Soo-Hyun KIM , Cheol-Ho PARK , Jong-Hyun PARK , Sun PARK , Chun-Gi YOU , Yul-Kyu LEE
发明人： Soo-Hyun KIM , Cheol-Ho PARK , Jong-Hyun PARK , Sun PARK , Chun-Gi YOU , Yul-Kyu LEE
IPC分类号： H01L51/52
CPC分类号： H01L27/3272 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0042 , H01L51/0052
摘要： An organic light emitting diode display including a substrate; a light blocking layer disposed on the substrate and having a semiconductor opening; a first semiconductor pattern disposed in the semiconductor opening; a gate insulating layer disposed on the light blocking layer and the first semiconductor pattern; a first gate electrode disposed on the gate insulating layer; a first source electrode electrically connected to the first semiconductor pattern; a first drain electrode spaced apart from the first source electrode; a protective insulating layer disposed on the first source electrode and the first drain electrode, the protective insulating layer having a contact portion; a pixel electrode disposed on the protective insulating layer contacting the first drain electrode through the contact portion; an emitting layer disposed on the pixel electrode; and a common electrode disposed on the emitting layer.
摘要翻译：一种有机发光二极管显示器，包括基板; 遮光层，设置在所述基板上并具有半导体开口; 设置在半导体开口中的第一半导体图案; 设置在所述遮光层和所述第一半导体图案上的栅极绝缘层; 设置在所述栅极绝缘层上的第一栅电极; 电连接到第一半导体图案的第一源电极; 与所述第一源电极间隔开的第一漏电极; 保护绝缘层，设置在所述第一源电极和所述第一漏电极上，所述保护绝缘层具有接触部分; 设置在所述保护绝缘层上的像素电极，所述保护绝缘层通过所述接触部分接触所述第一漏电极; 设置在像素电极上的发光层; 以及设置在发光层上的公共电极。

9. 发明申请

US20070264806A1 Mask for sequential lateral solidification and method of performing sequential lateral solidification using the same 失效
标题翻译：用于顺序侧向固化的掩模和使用其进行顺序横向固化的方法
公开(公告)号：US20070264806A1
公开(公告)日：2007-11-15
申请号：US11544924
申请日：2006-10-05
申请人： Cheol Ho Park
发明人： Cheol Ho Park
IPC分类号： H01L21/20 , H01L29/04 , C30B1/00
CPC分类号： C30B13/24 , B23K26/066 , C30B29/06 , H01L21/02532 , H01L21/0268 , H01L21/02686 , H01L21/02691
摘要： Embodiments of a mask for sequential lateral solidification are disclosed herein. In some embodiments, a mask of the present disclosure comprises a transmission region including a first slit column having a plurality of first slits separated from one another by a predetermined interval, and a second slit column having a plurality of second slits separated from one another by a predetermined interval and disposed adjacent to and offset from the first slit column. An irradiated laser beam is substantially completely transmitted through the transmission region. In some embodiments, the mask includes a semi-transmission region including a first opening pattern disposed at least partially between adjacent first slits and having a plurality of first openings formed into a desired shape, and a second opening pattern disposed at least partially between adjacent second slits and having a plurality of second opening formed into a desired shape. A portion of less than all of the laser beam is transmitted through the semi-transmission region. A method of performing the sequential lateral solidification using the mask is also disclosed herein.
摘要翻译：本文公开了用于连续侧向固化的掩模的实施例。在一些实施例中，本公开的掩模包括传输区域，该传输区域包括具有彼此以预定间隔分开的多个第一狭缝的第一狭缝列和具有多个第二狭缝的第二狭缝列，第二狭缝通过预定间隔并且设置成与第一狭缝柱相邻并偏移。照射的激光束基本上完全透射通过透射区域。在一些实施例中，掩模包括半透射区域，其包括至少部分地设置在相邻的第一狭缝之间并且具有形成为期望形状的多个第一开口的第一开口图案，以及至少部分地设置在相邻的第二狭缝之间的第二开口图案狭缝并且具有形成为期望形状的多个第二开口。少于全部的激光束的一部分透过半透射区域。本文还公开了使用掩模进行顺序横向固化的方法。

10. 发明授权

US09360531B2 Device for estimating a lifetime of a secondary battery and method thereof 有权
标题翻译：用于估计二次电池寿命的装置及其方法
公开(公告)号：US09360531B2
公开(公告)日：2016-06-07
申请号：US13450421
申请日：2012-04-18
申请人： Seung Bum Suh , Heekwan Chai , Jeongsoon Shin , Younghwa Ko , Bounggun Joung , Kwangki Baeg , Cheol Ho Park , Yongsic Kim , Wonseok Kim , Hoyul Baek , Jang-Woo Lee , Jake Kim , Jongman Kim , Su Dong Lee , Seung Ho Yang , Inho Jung , Joo Han Song , Kyeong-Beom Cheong
发明人： Seung Bum Suh , Heekwan Chai , Jeongsoon Shin , Younghwa Ko , Bounggun Joung , Kwangki Baeg , Cheol Ho Park , Yongsic Kim , Wonseok Kim , Hoyul Baek , Jang-Woo Lee , Jake Kim , Jongman Kim , Su Dong Lee , Seung Ho Yang , Inho Jung , Joo Han Song , Kyeong-Beom Cheong
IPC分类号： G01R31/36
CPC分类号： G01R31/3679 , G01R31/36 , G01R31/3606 , G01R31/3648 , G01R31/3651
摘要： Embodiments of the present invention provide an accelerated lifetime estimation device for predicting the lifetime of a secondary battery, and a method thereof. The accelerated lifetime estimation device can accurately estimate a normal lifetime of the secondary battery while reducing an evaluation time period of the secondary battery.
摘要翻译：本发明的实施例提供一种用于预测二次电池寿命的加速寿命估计装置及其方法。加速寿命估计装置可以在减少二次电池的评估时间周期的同时，准确地估计二次电池的正常寿命。

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