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1. 发明申请

US20150061067A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20150061067A1
公开(公告)日：2015-03-05
申请号：US14337811
申请日：2014-07-22
申请人： Hyun-Ju Kim , Jae-June Jang , Hoon Chang , Jae-Ho Kim , Kyu-Heon Cho
发明人： Hyun-Ju Kim , Jae-June Jang , Hoon Chang , Jae-Ho Kim , Kyu-Heon Cho
IPC分类号： H01L29/872 , H01L29/36
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/0623 , H01L29/36 , H01L29/66143
摘要： A semiconductor device includes an epitaxial layer of a first conductive type; an anode electrode and a cathode electrode arranged on the epitaxial layer to be separated from each other; a first drift layer of the first conductive type formed in the epitaxial layer; a Schottky contact area at a region of contact between the anode electrode and the first drift layer; an impurity region of a second conductive type different from the first conductive type at the epitaxial layer; and an insular impurity region formed below the Schottky contact area.
摘要翻译：半导体器件包括第一导电类型的外延层; 布置在所述外延层上以彼此分离的阳极电极和阴极电极; 在外延层中形成的第一导电类型的第一漂移层; 在阳极电极和第一漂移层之间的接触区域处的肖特基接触区域; 在外延层处不同于第一导电类型的第二导电类型的杂质区; 以及形成在肖特基接触区域下方的岛状杂质区域。

2. 发明授权

US08786016B2 Semiconductor device and method of forming the same 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US08786016B2
公开(公告)日：2014-07-22
申请号：US13908300
申请日：2013-06-03
申请人： Jae-June Jang
发明人： Jae-June Jang
IPC分类号： H01L29/66
CPC分类号： H01L29/7816 , H01L21/02233 , H01L21/76224 , H01L29/0649 , H01L29/0653 , H01L29/0878 , H01L29/1079 , H01L29/1083 , H01L29/1095 , H01L29/66659 , H01L29/66681
摘要： A semiconductor device may include a semiconductor substrate, a first conductive type well and a second conductive type drift region in the semiconductor substrate, the drift region including a first drift doping region and a second drift doping region, the second drift doping region vertically overlapping the well, and a first conductive type body region in the well, the body region being in contact with a side of the first drift doping region. The first drift doping region and the second doping region may include a first conductive type dopant and a second conductive type dopant, and an average density of the first conductive type dopant in the first drift doping region may be less than an average density of the first conductive type dopant in the second drift doping region.
摘要翻译：半导体器件可以包括半导体衬底，半导体衬底中的第一导电类型阱和第二导电类型漂移区，漂移区包括第一漂移掺杂区和第二漂移掺杂区，第二漂移掺杂区垂直重叠以及阱中的第一导电类型体区域，所述体区域与第一漂移掺杂区域的侧面接触。第一漂移掺杂区域和第二掺杂区域可以包括第一导电型掺杂剂和第二导电型掺杂剂，并且第一漂移掺杂区域中的第一导电类型掺杂剂的平均密度可以小于第一掺杂区域的第一掺杂区域的平均密度导电型掺杂剂。

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