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1. 发明授权

US06984482B2 Top-coating composition for photoresist and process for forming fine pattern using the same 失效
标题翻译：用于光致抗蚀剂的顶涂组合物和使用其形成精细图案的方法
公开(公告)号：US06984482B2
公开(公告)日：2006-01-10
申请号：US10174497
申请日：2002-06-17
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/09 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

2. 发明授权

US06395451B1 Photoresist composition containing photo base generator with photo acid generator 失效
标题翻译：含有光产酸剂的光源组合物的光致抗蚀剂组合物
公开(公告)号：US06395451B1
公开(公告)日：2002-05-28
申请号：US09666932
申请日：2000-09-21
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： H01L21/02118 , G03F7/0045 , G03F7/039 , H01L21/02282 , H01L21/0274 , H01L21/312 , Y10S430/115 , Y10S430/12
摘要： The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.
摘要翻译：本发明涉及一种含光致抗蚀剂组合物，更具体地说涉及光致抗蚀剂组合物，该组合物包括（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d）发电机。光产生剂优选选自化学式1的苄氧基羰基化合物或化学式2的O-酰氧基肟化合物，其防止形成浆液形成和严重的I / D偏差。其中R'，R 1至R 6定义在符合规范。

3. 发明授权

US06368773B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06368773B1
公开(公告)日：2002-04-09
申请号：US09448916
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
IPC分类号： G03F7027
CPC分类号： C08F216/38 , C07C43/303 , C08F220/06 , G03F7/0382
摘要： The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.
摘要翻译：本发明涉及适用于使用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺的光致抗蚀剂组合物的交联剂。根据本发明，优选的交联剂包含（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸，甲基丙烯酸其中R1和R2分别表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，直链或支链C1-10 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮直链或支链C 1-10 包含至少一个羟基的羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; 并且R 3表示氢或甲基。

4. 发明授权

US07329477B2 Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
标题翻译：使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法
公开(公告)号：US07329477B2
公开(公告)日：2008-02-12
申请号：US10993869
申请日：2004-11-19
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).
摘要翻译：本发明提供了使用胺类污染物保护性顶涂层组合物的方法。优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物紫外线（EUV）。

5. 发明授权

US06322948B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06322948B1
公开(公告)日：2001-11-27
申请号：US09499231
申请日：2000-02-07
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , Y10S430/128
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。<化学式1>

6. 发明授权

US06764806B2 Over-coating composition for photoresist, and processes for forming photoresist patterns using the same 失效
标题翻译：用于光致抗蚀剂的过涂层组合物，以及用于形成光致抗蚀剂图案的方法
公开(公告)号：US06764806B2
公开(公告)日：2004-07-20
申请号：US09728535
申请日：2000-12-01
申请人： Jae Chang Jung , Keun Kyu Kong , Cha Won Koh , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Cha Won Koh , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03C1492
CPC分类号： G03F7/0045 , G03F7/039 , G03F7/11 , Y10S430/168
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

7. 发明授权

US06664031B2 Process for forming photoresist pattern by using gas phase amine treatment 失效
标题翻译：通过使用气相胺处理形成光致抗蚀剂图案的方法
公开(公告)号：US06664031B2
公开(公告)日：2003-12-16
申请号：US09852377
申请日：2001-05-10
申请人： Jae Chang Jung , Cha Won Koh , Jin Soo Kim , Sung Eun Hong , Keun Kyu Kong , Ki Ho Baik
发明人： Jae Chang Jung , Cha Won Koh , Jin Soo Kim , Sung Eun Hong , Keun Kyu Kong , Ki Ho Baik
IPC分类号： G03F726
CPC分类号： G03F7/36
摘要： A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.
摘要翻译：公开了一种制备光致抗蚀剂图案的方法。特别地，所公开的形成光致抗蚀剂图案的方法减少或防止质量差的光致抗蚀剂图案形成，特别是当使用高光吸收（即低透光率）光致抗蚀剂树脂时。在一个方面，已曝光的光致抗蚀剂膜用气相碱性化合物处理以产生基本垂直的光致抗蚀剂图案。

8. 发明授权

US6165672A Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin 有权
标题翻译：马来酰亚胺或脂环族烯烃基单体，这些单体的共聚物树脂和使用树脂的光致抗蚀剂
公开(公告)号：US6165672A
公开(公告)日：2000-12-26
申请号：US152976
申请日：1998-09-14
申请人： Jae Chang Jung , Keun Kyu Kong , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C07D207/36 , C07C51/347 , C07C61/29 , C07C69/753 , C07D207/44 , C07D207/448 , C07D207/452 , C08F222/06 , C08F222/40 , C08F232/04 , C08F232/08 , G03F7/004 , G03F7/039 , G03C1/73 , C08L35/00 , C08L45/00 , H01L29/12
CPC分类号： C07D207/452 , C08F222/40 , C08F232/04 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/115
摘要： The present invention relates to a novel maleimide- or alicyclic olefin-based monomer, a copolymer resin of these monomers and a photoresist using the copolymer resin. The maleimide-introduced copolymer resin according to the present invention can easily be copolymerized with alicyclic olefin unit, has a physical property capable of enduring in 2.38% TMAH developer and increases adhesion of ArF or KrF photoresist. The photoresist film using a copolymer resin according to the present invention can be applied to highly integrate semiconductor devices.
摘要翻译：本发明涉及新型的马来酰亚胺或脂环族烯烃基单体，这些单体的共聚物树脂和使用该共聚物树脂的光致抗蚀剂。根据本发明的马来酰亚胺引入共聚物树脂可以容易地与脂环烯烃单元共聚，具有能够在2.38％TMAH显影剂中耐受的物理性能，并增加ArF或KrF光致抗蚀剂的粘附性。使用根据本发明的共聚物树脂的光致抗蚀剂膜可以应用于高度集成的半导体器件。

9. 发明授权

US06482565B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06482565B1
公开(公告)日：2002-11-19
申请号：US09448964
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C07D407/12 , C07D317/12 , C07D319/06
摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.
摘要翻译：本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮，包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

10. 发明授权

US06455225B1 Photoresist monomers having stability to post exposure delay, polymers thereof and photoresist compositions containing the same 失效
标题翻译：对后曝光延迟具有稳定性的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06455225B1
公开(公告)日：2002-09-24
申请号：US09640261
申请日：2000-08-16
申请人： Keun Kyu Kong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C08F32/00 , C07C43/305 , C07C2602/42 , G03F7/0045 , G03F7/039 , Y10S430/106
摘要： The present invention provides novel photoresist monomers, and photoresist polymers derived from monomers comprising the same. The photoresist monomers of the present invention are represented by the following formula: where Z1, Z2, R1, R2, R3, R4, R5 and p are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).
摘要翻译：本发明提供新型光致抗蚀剂单体和衍生自包含其的单体的光致抗蚀剂聚合物。本发明的光致抗蚀剂单体由下式表示：其中Z 1，Z 2，R 1，R 2，R 3，R 4，R 5和p是本文定义的那些。包含本发明的光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

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