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1. 发明授权

US07329477B2 Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same 失效
标题翻译：使用用于光刻胶的顶涂组合物和由其形成的产品形成精细图案的方法
公开(公告)号：US07329477B2
公开(公告)日：2008-02-12
申请号：US10993869
申请日：2004-11-19
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).
摘要翻译：本发明提供了使用胺类污染物保护性顶涂层组合物的方法。优选地，本发明的胺污染保护性顶涂剂组合物包含胺污染保护化合物。有用的胺污染保护化合物包括胺衍生物; 氨基酸衍生物; 酰胺衍生物; 氨基甲酸酯衍生物; 尿素衍生物; 的盐; 及其混合物。本发明的胺污染保护性顶涂剂组合物由于后曝光延迟效应而降低或消除诸如T形顶部的问题和/或由于与常规光刻工艺相关的酸扩散而难以形成低于100nm的精细图案涉及使用诸如KrF（248nm），ArF（193nm），F 2 N（157nm），电子束，离子束等的光源的含有脂环族主链的光致抗蚀剂聚合物紫外线（EUV）。

2. 发明授权

US06984482B2 Top-coating composition for photoresist and process for forming fine pattern using the same 失效
标题翻译：用于光致抗蚀剂的顶涂组合物和使用其形成精细图案的方法
公开(公告)号：US06984482B2
公开(公告)日：2006-01-10
申请号：US10174497
申请日：2002-06-17
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/09 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

3. 发明授权

US06699644B1 Process for forming a photoresist pattern comprising alkaline treatment 失效
标题翻译：用于形成包含碱处理的光致抗蚀剂图案的方法
公开(公告)号：US06699644B1
公开(公告)日：2004-03-02
申请号：US09651443
申请日：2000-08-30
申请人： Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F700
CPC分类号： G03F7/091 , G03F7/0395 , G03F7/168 , Y10S430/151
摘要： The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.
摘要翻译：本发明提供一种减少或消除在光致抗蚀剂膜上形成不良图案的方法，其通过在曝光之前使光致抗蚀剂膜与碱性溶液接触。本发明的方法显着地减少或防止T顶部和顶部损失。

4. 发明授权

US06664031B2 Process for forming photoresist pattern by using gas phase amine treatment 失效
标题翻译：通过使用气相胺处理形成光致抗蚀剂图案的方法
公开(公告)号：US06664031B2
公开(公告)日：2003-12-16
申请号：US09852377
申请日：2001-05-10
申请人： Jae Chang Jung , Cha Won Koh , Jin Soo Kim , Sung Eun Hong , Keun Kyu Kong , Ki Ho Baik
发明人： Jae Chang Jung , Cha Won Koh , Jin Soo Kim , Sung Eun Hong , Keun Kyu Kong , Ki Ho Baik
IPC分类号： G03F726
CPC分类号： G03F7/36
摘要： A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.
摘要翻译：公开了一种制备光致抗蚀剂图案的方法。特别地，所公开的形成光致抗蚀剂图案的方法减少或防止质量差的光致抗蚀剂图案形成，特别是当使用高光吸收（即低透光率）光致抗蚀剂树脂时。在一个方面，已曝光的光致抗蚀剂膜用气相碱性化合物处理以产生基本垂直的光致抗蚀剂图案。

5. 发明授权

US06359153B1 Photoresist monomers and preparation thereof 失效
标题翻译：光致抗蚀剂单体及其制备方法
公开(公告)号：US06359153B1
公开(公告)日：2002-03-19
申请号：US09428171
申请日：1999-10-27
申请人： Geun Su Lee , Chang Il Choi , Hyeong Soo Kim , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Chang Il Choi , Hyeong Soo Kim , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： C07D30700
CPC分类号： C07D307/00 , C07C43/315 , C07C43/317 , C07C2601/08 , C07C2601/14 , C07C2602/42
摘要： The present invention relates to monomers for preparing photoresist polymer resins which can be used in a photolithography process employing a deep ultraviolet light source, and the preparation of the same. Preferred monomers are represented by following Chemical Formula 1: wherein, X represents CH2, CH2CH2, or oxygen; R1 represents hydrogen, C1-C5 alkyl, or R′OH; R2 represents hydrogen; —OH, C1-C5 alkoxy, or —OR′—OH; R′ represents: and, m is an integer from 1-5, n is 1 or 2 and p is 0 or 1.
摘要翻译：本发明涉及可用于采用深紫外光源的光刻工艺及其制备方法中制备光致抗蚀剂聚合物树脂的单体。优选的单体由以下化学式1表示：化学式1其中X表示CH 2，CH 2 CH 2或氧; R 1表示氢，C 1 -C 5烷基或R 10 OH; R 2表示氢; -OH，C1-C5烷氧基或-OR'-OH; R'表示：并且m为1-5的整数，n为1或2，p为0或1。

6. 发明授权

US06764806B2 Over-coating composition for photoresist, and processes for forming photoresist patterns using the same 失效
标题翻译：用于光致抗蚀剂的过涂层组合物，以及用于形成光致抗蚀剂图案的方法
公开(公告)号：US06764806B2
公开(公告)日：2004-07-20
申请号：US09728535
申请日：2000-12-01
申请人： Jae Chang Jung , Keun Kyu Kong , Cha Won Koh , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Cha Won Koh , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03C1492
CPC分类号： G03F7/0045 , G03F7/039 , G03F7/11 , Y10S430/168
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

7. 发明授权

US06368773B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06368773B1
公开(公告)日：2002-04-09
申请号：US09448916
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik , Jin Soo Kim
IPC分类号： G03F7027
CPC分类号： C08F216/38 , C07C43/303 , C08F220/06 , G03F7/0382
摘要： The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 mn), ArF (193 mn), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl.
摘要翻译：本发明涉及适用于使用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺的光致抗蚀剂组合物的交联剂。根据本发明，优选的交联剂包含（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸，甲基丙烯酸其中R1和R2分别表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，直链或支链C1-10 包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基的直链或支链C 1-10酮直链或支链C 1-10 包含至少一个羟基的羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; 并且R 3表示氢或甲基。

8. 发明授权

US06824951B2 Photoresist composition for resist flow process 失效
标题翻译：用于抗流动过程的光刻胶组合物
公开(公告)号：US06824951B2
公开(公告)日：2004-11-30
申请号：US09947625
申请日：2001-09-06
申请人： Geun Su Lee , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
发明人： Geun Su Lee , Jin Soo Kim , Jae Chang Jung , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/40 , Y10S430/106 , Y10S430/111
摘要： A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.
摘要翻译：用于抗蚀剂流动方法的光致抗蚀剂组合物和使用其形成接触孔的方法。当将包含下述通式1或式2的交联剂的光致抗蚀剂组合物用于光致抗蚀剂图形形成工艺时，其改善抗蚀剂流动性，L / S图案分辨率和对比度。其中R1，R2，R3和R4分别代表 H或取代或未取代的直链或支链（C1-C10）烷基，其中R5，R6和R7分别表示H，取代或未取代的直链或支链（C1-C10）烷基或取代或未取代的直链或支链（C1-C10）烷氧基。

9. 发明授权

US06395451B1 Photoresist composition containing photo base generator with photo acid generator 失效
标题翻译：含有光产酸剂的光源组合物的光致抗蚀剂组合物
公开(公告)号：US06395451B1
公开(公告)日：2002-05-28
申请号：US09666932
申请日：2000-09-21
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： H01L21/02118 , G03F7/0045 , G03F7/039 , H01L21/02282 , H01L21/0274 , H01L21/312 , Y10S430/115 , Y10S430/12
摘要： The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.
摘要翻译：本发明涉及一种含光致抗蚀剂组合物，更具体地说涉及光致抗蚀剂组合物，该组合物包括（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d）发电机。光产生剂优选选自化学式1的苄氧基羰基化合物或化学式2的O-酰氧基肟化合物，其防止形成浆液形成和严重的I / D偏差。其中R'，R 1至R 6定义在符合规范。

10. 发明授权

US06322948B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06322948B1
公开(公告)日：2001-11-27
申请号：US09499231
申请日：2000-02-07
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , Y10S430/128
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。<化学式1>

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