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1. 发明授权

US08163087B2 Plasma enhanced atomic layer deposition system and method 有权
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US08163087B2
公开(公告)日：2012-04-24
申请号：US11094461
申请日：2005-03-31
申请人： Jacques Faguet , Frank M. Cerio, Jr. , Tsukasa Matsuda , Kaoru Yamamoto
发明人： Jacques Faguet , Frank M. Cerio, Jr. , Tsukasa Matsuda , Kaoru Yamamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译：等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应在基板上形成预定的膜。还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的膜沉积在基底上。

2. 发明授权

US07651568B2 Plasma enhanced atomic layer deposition system 有权
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：US07651568B2
公开(公告)日：2010-01-26
申请号：US11090256
申请日：2005-03-28
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank M. Cerio, Jr. , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank M. Cerio, Jr. , Kaoru Yamamoto
IPC分类号： C23C16/505 , C23C16/503 , H01L21/306
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室。电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一工艺材料和第二工艺材料。

3. 发明申请

US20060225655A1 Plasma enhanced atomic layer deposition system and method 有权
标题翻译：等离子体增强原子层沉积系统和方法
公开(公告)号：US20060225655A1
公开(公告)日：2006-10-12
申请号：US11094461
申请日：2005-03-31
申请人： Jacques Faguet , Frank Cerio , Tsukasa Matsuda , Kaoru Yamamoto
发明人： Jacques Faguet , Frank Cerio , Tsukasa Matsuda , Kaoru Yamamoto
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4409 , C23C16/45542 , C23C16/5096 , H01J37/32477
摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.
摘要翻译：等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应在基板上形成预定的膜。还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的膜沉积在基底上。

4. 发明申请

US20070116872A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
标题翻译：用于热和等离子体增强气相沉积的装置和操作方法
公开(公告)号：US20070116872A1
公开(公告)日：2007-05-24
申请号：US11281372
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
IPC分类号： C23C16/00 , H05H1/24 , G06F19/00 , A01K15/02
CPC分类号： C23C16/4585 , C23C16/12 , C23C16/14 , C23C16/16 , C23C16/18 , C23C16/303 , C23C16/32 , C23C16/34 , C23C16/36 , C23C16/402 , C23C16/403 , C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/5096 , H01J37/32082 , H01J37/32495 , H01J2237/2001
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining vacuum isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support and translate the substrate between a first position in the transfer space to a second position in the process space. The system includes a sealing assembly configured to impede gas flow between the process space and the transfer space during translation of the substrate within the process space.
摘要翻译：一种在衬底上进行气相沉积的方法，计算机可读介质和系统，其将衬底处理在与所述处理系统的传送空间真空隔离的处理系统的处理空间中，在第一位置或在处理空间中的第二位置，同时保持与传送空间的真空隔离，并且在第一位置或第二位置处将材料沉积在所述基板上。因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接到所述第二组件并且被配置为在所述传送空间中的第一位置和所述处理空间中的第二位置之间支撑和平移所述衬底。该系统包括密封组件，该密封组件构造成在工艺空间内的衬底平移过程中阻碍工艺空间与传送空间之间的气体流动。

5. 发明申请

US20070116873A1 Apparatus for thermal and plasma enhanced vapor deposition and method of operating 审中-公开
标题翻译：用于热和等离子体增强气相沉积的装置和操作方法
公开(公告)号：US20070116873A1
公开(公告)日：2007-05-24
申请号：US11281376
申请日：2005-11-18
申请人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
发明人： Yicheng Li , Tadahiro Ishizaka , Kaoru Yamamoto , Atsushi Gomi , Masamichi Hara , Toshiaki Fujisato , Jacques Faguet , Yasushi Mizusawa
IPC分类号： H05H1/24 , C23C16/00 , G06F19/00
CPC分类号： C23C16/45517 , C23C16/4401 , C23C16/4412 , H01J37/32082 , H01J37/32495 , H01J37/32522
摘要： A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.
摘要翻译：一种用于气相沉积在基板上的方法，计算机可读介质和系统，其将气相沉积系统的第一组件保持在第一温度，将气相沉积系统的第二组件保持在低于第一温度的降低的温度，所述第一组件的处理空间中的所述衬底与所述第二组件中的传送空间真空隔离，并且将材料沉积在所述衬底上。因此，该系统包括具有被配置为促进材料沉积的处理空间的第一组件，耦合到第一组件的第二组件，并且具有传输空间以促进衬底进入和离开沉积系统;衬底台连接并且被配置为支撑所述基板，以及密封组件，其被配置为将所述处理空间与所述传送空间分离。第一组件被配置为保持在第一温度，并且第二组件构造成保持在低于第一温度的降低的温度。

6. 发明申请

US20060213438A1 Plasma enhanced atomic layer deposition system 有权
标题翻译：等离子体增强原子层沉积系统
公开(公告)号：US20060213438A1
公开(公告)日：2006-09-28
申请号：US11090256
申请日：2005-03-28
申请人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank Cerio , Kaoru Yamamoto
发明人： Tadahiro Ishizaka , Tsukasa Matsuda , Frank Cerio , Kaoru Yamamoto
IPC分类号： C23C16/00
CPC分类号： C23C16/4409 , C23C16/4404 , C23C16/4412 , C23C16/45542 , C23C16/45544 , C23C16/5096
摘要： A plasma enhanced atomic layer deposition (PEALD) system includes a first chamber component coupled to a second chamber component to provide a processing chamber defining an isolated processing space within the processing chamber. A substrate holder is provided within the processing chamber and configured to support a substrate, a first process material supply system is configured to supply a first process material to the processing chamber and a second process material supply system is configured to supply a second process material to the processing chamber. A power source is configured to couple electromagnetic power to the processing chamber, and a sealing assembly interposed between the first and second chamber components. The sealing assembly includes a plurality of sealing members configured to reduce the amount of external contaminants permeating through an interface of the first and second components into the isolated processing space of the processing chamber, wherein the film is formed on the substrate by alternatingly introducing the first process material and the second process material.
摘要翻译：等离子体增强原子层沉积（PEALD）系统包括耦合到第二室部件的第一室部件，以提供限定处理室内的隔离处理空间的处理室。衬底保持器设置在处理室内并被配置为支撑衬底，第一处理材料供应系统被配置为将第一处理材料供应到处理室，第二处理材料供应系统被配置为将第二处理材料供应到处理室。电源被配置为将电磁功率耦合到处理室，以及插入在第一和第二室部件之间的密封组件。密封组件包括多个密封构件，其被配置为将渗透通过第一和第二组件的界面的外部污染物的量减少到处理室的隔离处理空间中，其中通过交替地引入第一工艺材料和第二工艺材料。

7. 发明授权

US08525953B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08525953B2
公开(公告)日：2013-09-03
申请号：US13497383
申请日：2010-06-08
申请人： Hiromi Katoh , Yasuhiro Sugita , Kohhei Tanaka , Kaoru Yamamoto , Naru Usukura , Hiroaki Shigeta
发明人： Hiromi Katoh , Yasuhiro Sugita , Kohhei Tanaka , Kaoru Yamamoto , Naru Usukura , Hiroaki Shigeta
IPC分类号： G02F1/133
CPC分类号： G06F3/0412 , G06F3/0418 , G06F3/042 , G09G3/3406 , G09G2360/144 , G09G2360/148
摘要： A plurality of first and second sensor pixel circuits each sensing light during a designated sensing period and retaining the amount of sensed light otherwise are arranged in a pixel region. A backlight is turned on once for a predetermined time in one-frame period. A sensing period when the backlight is turned on and a sensing period when the backlight is turned off are set once, respectively, in the one-frame period. The first sensor pixel circuit is reset. The second sensor pixel circuit is reset. Read from sensor pixel circuits of two types is performed in parallel in a line sequential manner during a period other than the periods and. A difference circuit provided outside of the sensor pixel circuits is used for obtaining a difference between an amount of light when the backlight is turned on and an amount of light when the backlight is turned off.
摘要翻译：多个第一和第二传感器像素电路在指定的检测周期期间感测光并保持感测光的量，否则布置在像素区域中。背光源在一帧周期内打开一段预定时间。在一帧期间分别设定背光源开启的感测期间和背光源关闭时的感测期间一次。第一传感器像素电路被复位。第二传感器像素电路被复位。从周期和周期以外的期间以线顺序的方式并行地进行两种类型的传感器像素电路的读取。设置在传感器像素电路外部的差分电路用于获得当背光打开时的光量与背光被关闭时的光量之间的差。

8. 发明申请

US20130113768A1 DISPLAY DEVICE AND DRIVE METHOD FOR SAME 审中-公开
标题翻译：显示装置和驱动方法
公开(公告)号：US20130113768A1
公开(公告)日：2013-05-09
申请号：US13810823
申请日：2011-07-26
申请人： Kaoru Yamamoto , Yasuhiro Sugita , Kohei Tanaka
发明人： Kaoru Yamamoto , Yasuhiro Sugita , Kohei Tanaka
IPC分类号： G09G5/00
CPC分类号： G09G5/003 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G06F3/0416 , G06F3/042
摘要： Disclosed is a display device having an optical sensor with increased sensitivity. The display device is provided with: a display panel that includes a plurality of display pixel circuits (8) and a plurality of sensor pixel circuits (9a) in a display region (4); and a driver circuit (7) that supplies a driving signal to the sensor pixel circuits (9a). The sensor pixel circuits (9a) are each provided with: a light receiving element (PD1); a storage node (INT) that retains electrical charges corresponding to the light amount that entered the light receiving element (PD1); and a read-out switching element (M1) connected to the storage node (INT). The display device is further provided with a first switching element (T1) that is connected between the light receiving element (PD1) and the storage node (INT) and that operates in a saturation region, and a second switching element (T2) that resets the storage node (INT).
摘要翻译：公开了具有灵敏度增加的光学传感器的显示装置。显示装置具有：在显示区域（4）中包括多个显示像素电路（8）和多个传感器像素电路（9a）的显示面板; 以及将驱动信号提供给传感器像素电路（9a）的驱动电路（7）。传感器像素电路（9a）各自设置有：光接收元件（PD1）; 存储节点（INT），其保持与进入所述光接收元件（PD1）的光量相对应的电荷; 以及连接到存储节点（INT）的读出开关元件（M1）。显示装置还具备连接在光接收元件（PD1）和存储节点（INT）之间并在饱和区域中工作的第一开关元件（T1）和复位的第二开关元件（T2）存储节点（INT）。

9. 发明申请

US20130000558A1 DEPOSITION DEVICE 有权
标题翻译：沉积装置
公开(公告)号：US20130000558A1
公开(公告)日：2013-01-03
申请号：US13634314
申请日：2011-03-08
申请人： Masamichi Hara , Kaoru Yamamoto , Atsushi Gomi , Satoshi Taga
发明人： Masamichi Hara , Kaoru Yamamoto , Atsushi Gomi , Satoshi Taga
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/455 , C23C16/16 , C23C16/4412 , C23C16/45591 , C23C16/45593 , H01L21/28556
摘要： The disclosed deposition device for forming a thin film using a starter gas comprising an organic metal compound is provided with: a processing container 22; a mounting platform 28 which has a heater 34 for heating the workpiece W; a gas introduction mechanism 80 which introduces the starter gas toward the area more exterior than the outer peripheral end of the workpiece W on the mounting platform 28; an internal partition wall 90 which is disposed such that the lower end of said processing space contacts the mounting platform 28 to form gas outlets 92 between the lower portion of the space and the edges of the mounting platform 28; and a orifice forming member 96 which extends radially inward toward the mounting platform 28 and forms an orifice 98 communicating with the gas outlet 92.
摘要翻译：所公开的使用包含有机金属化合物的起动气体形成薄膜的沉积装置设置有：处理容器22; 安装平台28，其具有用于加热工件W的加热器34; 气体引入机构80，其将起动气体引导到在安装平台28上比工件W的外周端更外侧的区域; 内部分隔壁90设置成使得所述处理空间的下端与安装平台28接触，以在空间的下部与安装平台28的边缘之间形成气体出口92; 以及孔径形成构件96，其朝向安装平台28径向向内延伸并且形成与气体出口92连通的孔口98。

10. 发明申请

US20090314435A1 PLASMA PROCESSING UNIT 审中-公开
标题翻译：等离子体加工单元
公开(公告)号：US20090314435A1
公开(公告)日：2009-12-24
申请号：US12551869
申请日：2009-09-01
申请人： Taro IKEDA , Hachishiro Iizuka , Kaoru Yamamoto
发明人： Taro IKEDA , Hachishiro Iizuka , Kaoru Yamamoto
IPC分类号： H01L21/306
CPC分类号： H01J37/32431 , H01J2237/20
摘要： A plasma processing unit of the present invention includes: a processing chamber having a dielectric wall; and a stage provided in the processing chamber, the stage having a placement surface onto which an object to be processed is placed. An induction plasma is generated in the processing chamber via the dielectric wall. The plasma processing unit is provided with a dielectric member capable of detachably covering at least the placement surface of the stage.
摘要翻译：本发明的等离子体处理单元包括：具有电介质壁的处理室; 以及设置在所述处理室中的台，所述台具有放置所述待处理物体的放置面。通过电介质壁在处理室中产生感应等离子体。等离子体处理单元设置有能够至少可拆卸地覆盖台的放置表面的电介质构件。

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