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1. 发明授权

US5707485A Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch 失效
标题翻译：通过等离子体蚀刻便于从晶片背面去除材料的方法和装置
公开(公告)号：US5707485A
公开(公告)日：1998-01-13
申请号：US575647
申请日：1995-12-20
申请人： J. Brett Rolfson , William J. Crane
发明人： J. Brett Rolfson , William J. Crane
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32431 , Y10S438/977
摘要： The present invention is a method and apparatus, particularly adaptable to plasma etchers having horizontal base electrodes, for removing films such as silicon nitride from the backside of semiconductor wafers without leaving unetched residue or bumps thereon. Following the loading of a wafer in a plasma etch chamber, the wafer is positioned above the base electrode and within an etchant plasma for a period of time, with all portions of the front side surface and all portions of the back side surface of the wafer being subjected to the plasma for at least a portion of the period.
摘要翻译：本发明是一种特别适用于具有水平基底电极的等离子体蚀刻器的方法和装置，用于从半导体晶片的背面去除诸如氮化硅的膜，而不会在其上留下未蚀刻的残余物或凸块。在等离子体蚀刻室中加载晶片之后，将晶片定位在基极电极的上方并在蚀刻剂等离子体内一段时间，晶片的正面和背面的所有部分的所有部分在等离子体中进行至少一段时间的处理。

2. 发明授权

US07838183B2 Multi-layer, attenuated phase-shifting mask 失效
标题翻译：多层衰减相移掩模
公开(公告)号：US07838183B2
公开(公告)日：2010-11-23
申请号：US12581455
申请日：2009-10-19
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/29
摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.
摘要翻译：本发明提供了衰减相移掩模（“APSM”），其在每个实施例中包括尺寸和形状以确定期望的半导体器件特征的完全透射区域，在完全透射区域的边缘处对应于隔离的器件特征的略微衰减的区域在完全透射区域的边缘处的高度衰减的区域对应于紧密间隔或嵌套的器件特征，以及完全不透明的区域，其中期望阻止通过APSM的所有辐射的透射。本发明还提供了制造根据本发明的APSM的方法。

3. 发明授权

US07535112B2 Semiconductor constructions comprising multi-level patterns of radiation-imageable material 有权
标题翻译：包括可辐射成像材料的多层图案的半导体结构
公开(公告)号：US07535112B2
公开(公告)日：2009-05-19
申请号：US11584163
申请日：2006-10-20
申请人： John Aiton , Joseph M. Richards , J. Brett Rolfson , John M. Drynan
发明人： John Aiton , Joseph M. Richards , J. Brett Rolfson , John M. Drynan
IPC分类号： H01L23/29
CPC分类号： H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/49431 , H01L2224/78301 , H01L2224/85 , H01L2224/85205 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/00
摘要： The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region. The invention also includes a method of forming wire bonds for semiconductor constructions in which a multi-level pattern is photolithographically formed in a radiation-imageable material (such as, for example, polyimide).
摘要翻译：本发明包括一种半导体结构，其具有与含金属层相关联的引线接合区域，并且在含金属层之上具有可辐射成像材料。可辐射成像材料可以被配置为具有具有第一高度的第一形貌区域和具有高于第一高度高度的第二高度高度的第二地形区域的多层图案。第二形貌区域可以从接合区域横向移位至少第一形貌区域的横向宽度，所述横向宽度为至少约10微米。另外或替代地，第二形貌区域的高度高度可以高于第一地形区域的高度高度至少约2微米。本发明还包括一种形成用于半导体结构的引线键合的方法，其中在可辐射成像材料（例如，聚酰亚胺）中光刻形成多层图案。

4. 发明授权

US07494750B2 Reticles 有权
标题翻译：网状物和形成掩模的方法
公开(公告)号：US07494750B2
公开(公告)日：2009-02-24
申请号：US11478887
申请日：2006-06-30
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/50 , G03F7/70425
摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.
摘要翻译：本发明包括掩模版和形成掩模版的方法。在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

5. 发明授权

US07455937B2 Reticles and methods of forming reticles 有权
标题翻译：网状物和形成掩模的方法
公开(公告)号：US07455937B2
公开(公告)日：2008-11-25
申请号：US11003274
申请日：2004-12-03
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/50 , G03F7/70425
摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.
摘要翻译：本发明包括掩模版和形成掩模版的方法。在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

6. 发明授权

US06767690B2 Methods of forming patterns across photoresist and methods of forming radiation-patterning tools 有权
标题翻译：在光致抗蚀剂上形成图案的方法和形成辐射图案化工具的方法
公开(公告)号：US06767690B2
公开(公告)日：2004-07-27
申请号：US10391310
申请日：2003-03-17
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F700
CPC分类号： G03F7/70466 , G03F7/0045 , Y10S430/143
摘要： The invention encompasses a method for forming a pattern across and expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in patterning semiconductor substrates.
摘要翻译：本发明包括一种用于在一片光致抗蚀剂上形成图案的方法。该扩展包括限定的第一区域，第二区域和第三区域。第一区域暴露于第一辐射同时使第三区域不暴露; 并且随后第二区域暴露于第二辐射，同时使第三区域不暴露于第二辐射。第二次辐射与第一次辐射不同。第一和第二区域暴露于第一和第二辐射改变第一和第二区域在溶剂中相对于the第三区域的溶解度的溶解度。在广the的第一和第二区域暴露于第一次和第二次辐射之后，将该exp is暴露于溶剂以对exp to进行模拟。本发明可用于形成辐射图案化工具和模板; 并且在图案化半导体衬底中。

7. 发明授权

US06599666B2 Multi-layer, attenuated phase-shifting mask 有权
公开(公告)号：US06599666B2
公开(公告)日：2003-07-29
申请号：US09809720
申请日：2001-03-15
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/29
摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely-spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

8. 发明授权

US06555298B1 Method and apparatus for uniformly baking substrates such as photomasks 失效
标题翻译：用于均匀烘烤诸如光掩模的基材的方法和装置
公开(公告)号：US06555298B1
公开(公告)日：2003-04-29
申请号：US09643466
申请日：2000-08-22
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F726
CPC分类号： H01L21/67103 , F28D2021/0077 , G03F7/168 , G03F7/38 , G03F7/40 , H01L21/67109
摘要： A method and apparatus for baking a film onto a substrate. A film, such as a layer of photoresist, is disposed on a first surface of a substrate while a second surface is exposed to a liquid bath. The liquid bath is maintained at a pre-selected temperature. Exposure of the substrate to the liquid bath allows the film on the opposite surface to bake. The liquid bath is then re-circulated to maintain a constant and uniform temperature gradient across the substrate.
摘要翻译：一种将薄膜烘烤在基材上的方法和装置。将诸如光致抗蚀剂层的膜设置在基板的第一表面上，同时将第二表面暴露于液槽。液浴保持在预先选定的温度。将基板暴露于液槽允许相对表面上的膜被烘烤。然后液体浴再次循环，以保持基板上恒定均匀的温度梯度。

9. 发明授权

US06548223B2 Methods of forming patterns across photoresist and methods of forming radiation-patterning tools 有权
公开(公告)号：US06548223B2
公开(公告)日：2003-04-15
申请号：US09797352
申请日：2001-02-28
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F700
CPC分类号： G03F7/70466 , G03F7/0045 , Y10S430/143
摘要： The invention encompasses a method for forming a pattern across an expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions of the expanse to the first and second radiations alters the solubility of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in pattering semiconductor substrates.

10. 发明授权

US06521049B1 Method for reducing gaseous species of contamination in wet processes 有权
标题翻译：在湿法中减少污染物气体的方法
公开(公告)号：US06521049B1
公开(公告)日：2003-02-18
申请号：US09327152
申请日：1999-06-07
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： B08B304
CPC分类号： H01L21/02052 , B01D19/0036 , B01D19/0068 , B08B3/04 , B08B3/14 , H01L21/67057 , H01L21/67086 , Y10S134/902 , Y10S438/906
摘要： A method for wet processing of a semiconductor-containing substrate that reduces contamination in the wet process by removing undesired sources of gas contamination, the method comprising: pumping a processing liquid through a degasifier, exposing the semiconductor wafer, in a vessel, to the degasified processing liquid; and optionally recirculating the processing liquid through the degasifier and back into the vessel.
摘要翻译：一种用于湿处理含半导体的衬底的方法，其通过去除不期望的气体污染源来减少湿法中的污染，所述方法包括：通过脱气器泵送处理液体，将容器中的半导体晶片暴露于脱气处理液体; 并且可选地将处理液体再循环通过脱气器并返回到容器中。

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