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1. 发明授权

US06300017B1 Stencil masks and methods of manufacturing stencil masks 失效
标题翻译：模板面具和制造模板掩模的方法
公开(公告)号：US06300017B1
公开(公告)日：2001-10-09
申请号：US09137504
申请日：1998-08-20
申请人： J. Brett Rolfson , Ivan L. Berry, III
发明人： J. Brett Rolfson , Ivan L. Berry, III
IPC分类号： G03F900
CPC分类号： G03F1/20
摘要： In one aspect, the invention encompasses a method of manufacturing a stencil mask comprising: a) defining a plurality of opening locations within a substrate; b) providing a dopant within the substrate, the dopant being provided in a pattern to form a plurality of first regions doped to a concentration with a dopant and one or more second regions not doped to the concentration with the dopant, individual first regions surrounding individual opening locations; c) forming a plurality of openings within the opening locations, the individual openings extending into the substrate; and d) forming a stencil mask from the substrate having the openings extending therein. In another aspect, the invention encompasses a stencil mask comprising: a) a substrate; b) a plurality of openings extending through the substrate; and c) a pattern of dopant within the substrate, the pattern comprising a plurality of first locations doped to a concentration with a dopant and one or more second locations not doped to the concentration with the dopant, individual first locations surrounding individual openings.
摘要翻译：在一个方面，本发明包括一种制造模板掩模的方法，包括：a）在衬底内限定多个开口位置; b）在衬底内提供掺杂剂，所述掺杂剂以图案形式提供，以形成多个第一区域，所述第一区域掺杂浓度为掺杂剂和一个或多个第二区域，所述第二区域未掺杂到掺杂剂的浓度，所述第一区域围绕个体开放地点; c）在打开位置内形成多个开口，各个开口延伸到基板中; 以及d）从其中延伸有开口的基底形成模板掩模。在另一方面，本发明包括一种模板掩模，其包括：a）基材; b）延伸穿过基底的多个开口; 以及c）所述衬底内的掺杂剂图案，所述图案包括掺杂到掺杂剂浓度的多个第一位置和未掺杂到掺杂剂浓度的一个或多个第二位置，围绕各个开口的各个第一位置。

2. 发明授权

US07838183B2 Multi-layer, attenuated phase-shifting mask 失效
标题翻译：多层衰减相移掩模
公开(公告)号：US07838183B2
公开(公告)日：2010-11-23
申请号：US12581455
申请日：2009-10-19
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/29
摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.
摘要翻译：本发明提供了衰减相移掩模（“APSM”），其在每个实施例中包括尺寸和形状以确定期望的半导体器件特征的完全透射区域，在完全透射区域的边缘处对应于隔离的器件特征的略微衰减的区域在完全透射区域的边缘处的高度衰减的区域对应于紧密间隔或嵌套的器件特征，以及完全不透明的区域，其中期望阻止通过APSM的所有辐射的透射。本发明还提供了制造根据本发明的APSM的方法。

3. 发明授权

US07535112B2 Semiconductor constructions comprising multi-level patterns of radiation-imageable material 有权
标题翻译：包括可辐射成像材料的多层图案的半导体结构
公开(公告)号：US07535112B2
公开(公告)日：2009-05-19
申请号：US11584163
申请日：2006-10-20
申请人： John Aiton , Joseph M. Richards , J. Brett Rolfson , John M. Drynan
发明人： John Aiton , Joseph M. Richards , J. Brett Rolfson , John M. Drynan
IPC分类号： H01L23/29
CPC分类号： H01L24/05 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/78 , H01L24/85 , H01L2224/02166 , H01L2224/04042 , H01L2224/05554 , H01L2224/05556 , H01L2224/05624 , H01L2224/05647 , H01L2224/45144 , H01L2224/48463 , H01L2224/48624 , H01L2224/48647 , H01L2224/49431 , H01L2224/78301 , H01L2224/85 , H01L2224/85205 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/00
摘要： The invention includes a semiconductor construction having a wire bonding region associated with a metal-containing layer, and having radiation-imageable material over the metal-containing layer. The radiation-imageable material can be configured as a multi-level pattern having a first topographical region with a first elevational height and a second topographical region with a second elevational height above the first elevational height. The second topographical region can be laterally displaced from the bonding region by at least a lateral width of the first topographical region, with said lateral width being at least about 10 microns. Additionally, or alternatively, the elevational height of the second topographical region can be at least about 2 microns above the elevational height of the first topographical region. The invention also includes a method of forming wire bonds for semiconductor constructions in which a multi-level pattern is photolithographically formed in a radiation-imageable material (such as, for example, polyimide).
摘要翻译：本发明包括一种半导体结构，其具有与含金属层相关联的引线接合区域，并且在含金属层之上具有可辐射成像材料。可辐射成像材料可以被配置为具有具有第一高度的第一形貌区域和具有高于第一高度高度的第二高度高度的第二地形区域的多层图案。第二形貌区域可以从接合区域横向移位至少第一形貌区域的横向宽度，所述横向宽度为至少约10微米。另外或替代地，第二形貌区域的高度高度可以高于第一地形区域的高度高度至少约2微米。本发明还包括一种形成用于半导体结构的引线键合的方法，其中在可辐射成像材料（例如，聚酰亚胺）中光刻形成多层图案。

4. 发明授权

US07494750B2 Reticles 有权
标题翻译：网状物和形成掩模的方法
公开(公告)号：US07494750B2
公开(公告)日：2009-02-24
申请号：US11478887
申请日：2006-06-30
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/50 , G03F7/70425
摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.
摘要翻译：本发明包括掩模版和形成掩模版的方法。在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

5. 发明授权

US07455937B2 Reticles and methods of forming reticles 有权
标题翻译：网状物和形成掩模的方法
公开(公告)号：US07455937B2
公开(公告)日：2008-11-25
申请号：US11003274
申请日：2004-12-03
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/50 , G03F7/70425
摘要： The invention includes reticles and methods of forming reticles. In one aspect, a reticle can include a quartz-containing substrate, an attenuating layer, and an antireflective structure between the attenuating layer and the quartz-containing substrate. The invention can also include a reticle having a relatively transparent region between first and second surfaces, a relatively opaque region proximate the first surface, and a layer comprising one or both of metal fluoride and hafnium oxide proximate the first or second surface. The invention can also include methods of forming reticles in which an antireflective structure is formed over a surface of a quartz-containing substrate. The antireflective structure can comprise a Fabry-Perot pair, and in some aspects can comprise a layer containing one or both of metal fluoride and hafnium oxide.
摘要翻译：本发明包括掩模版和形成掩模版的方法。在一个方面，掩模版可以包括含有石英的衬底，衰减层和在所述衰减层和含石英衬底之间的抗反射结构。本发明还可以包括在第一表面和第二表面之间具有相对透明区域的掩模版，靠近第一表面的相对不透明的区域，以及在第一表面或第二表面附近包含金属氟化物和氧化铪中的一种或两种的层。本发明还可以包括在含石英衬底的表面上形成抗反射结构的形成掩模版的方法。抗反射结构可以包含法布里 - 珀罗对，并且在一些方面可以包含含有金属氟化物和氧化铪中的一种或两种的层。

6. 发明授权

US06767690B2 Methods of forming patterns across photoresist and methods of forming radiation-patterning tools 有权
标题翻译：在光致抗蚀剂上形成图案的方法和形成辐射图案化工具的方法
公开(公告)号：US06767690B2
公开(公告)日：2004-07-27
申请号：US10391310
申请日：2003-03-17
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F700
CPC分类号： G03F7/70466 , G03F7/0045 , Y10S430/143
摘要： The invention encompasses a method for forming a pattern across and expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in patterning semiconductor substrates.
摘要翻译：本发明包括一种用于在一片光致抗蚀剂上形成图案的方法。该扩展包括限定的第一区域，第二区域和第三区域。第一区域暴露于第一辐射同时使第三区域不暴露; 并且随后第二区域暴露于第二辐射，同时使第三区域不暴露于第二辐射。第二次辐射与第一次辐射不同。第一和第二区域暴露于第一和第二辐射改变第一和第二区域在溶剂中相对于the第三区域的溶解度的溶解度。在广the的第一和第二区域暴露于第一次和第二次辐射之后，将该exp is暴露于溶剂以对exp to进行模拟。本发明可用于形成辐射图案化工具和模板; 并且在图案化半导体衬底中。

7. 发明授权

US06599666B2 Multi-layer, attenuated phase-shifting mask 有权
公开(公告)号：US06599666B2
公开(公告)日：2003-07-29
申请号：US09809720
申请日：2001-03-15
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/29
摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely-spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.

8. 发明授权

US06555298B1 Method and apparatus for uniformly baking substrates such as photomasks 失效
标题翻译：用于均匀烘烤诸如光掩模的基材的方法和装置
公开(公告)号：US06555298B1
公开(公告)日：2003-04-29
申请号：US09643466
申请日：2000-08-22
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F726
CPC分类号： H01L21/67103 , F28D2021/0077 , G03F7/168 , G03F7/38 , G03F7/40 , H01L21/67109
摘要： A method and apparatus for baking a film onto a substrate. A film, such as a layer of photoresist, is disposed on a first surface of a substrate while a second surface is exposed to a liquid bath. The liquid bath is maintained at a pre-selected temperature. Exposure of the substrate to the liquid bath allows the film on the opposite surface to bake. The liquid bath is then re-circulated to maintain a constant and uniform temperature gradient across the substrate.
摘要翻译：一种将薄膜烘烤在基材上的方法和装置。将诸如光致抗蚀剂层的膜设置在基板的第一表面上，同时将第二表面暴露于液槽。液浴保持在预先选定的温度。将基板暴露于液槽允许相对表面上的膜被烘烤。然后液体浴再次循环，以保持基板上恒定均匀的温度梯度。

9. 发明授权

US06548223B2 Methods of forming patterns across photoresist and methods of forming radiation-patterning tools 有权
公开(公告)号：US06548223B2
公开(公告)日：2003-04-15
申请号：US09797352
申请日：2001-02-28
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F700
CPC分类号： G03F7/70466 , G03F7/0045 , Y10S430/143
摘要： The invention encompasses a method for forming a pattern across an expanse of photoresist. The expanse comprises a defined first region, second region and third region. The first region is exposed to a first radiation while leaving the third region not exposed; and subsequently the second region is exposed to a second radiation while leaving the third region not exposed to the second radiation. The second radiation is different from the first radiation. The exposure of the first and second regions of the expanse to the first and second radiations alters the solubility of the first and second regions in a solvent relative to the solubility of the third region of the expanse. After the first and second regions of the expanse are exposed to the first and second radiations, the expanse is exposed to a solvent to pattern the expanse. The invention can be utilized in forming radiation-patterning tools and stencils; and in pattering semiconductor substrates.

10. 发明授权

US06521049B1 Method for reducing gaseous species of contamination in wet processes 有权
标题翻译：在湿法中减少污染物气体的方法
公开(公告)号：US06521049B1
公开(公告)日：2003-02-18
申请号：US09327152
申请日：1999-06-07
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： B08B304
CPC分类号： H01L21/02052 , B01D19/0036 , B01D19/0068 , B08B3/04 , B08B3/14 , H01L21/67057 , H01L21/67086 , Y10S134/902 , Y10S438/906
摘要： A method for wet processing of a semiconductor-containing substrate that reduces contamination in the wet process by removing undesired sources of gas contamination, the method comprising: pumping a processing liquid through a degasifier, exposing the semiconductor wafer, in a vessel, to the degasified processing liquid; and optionally recirculating the processing liquid through the degasifier and back into the vessel.
摘要翻译：一种用于湿处理含半导体的衬底的方法，其通过去除不期望的气体污染源来减少湿法中的污染，所述方法包括：通过脱气器泵送处理液体，将容器中的半导体晶片暴露于脱气处理液体; 并且可选地将处理液体再循环通过脱气器并返回到容器中。

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