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1. 发明申请

US20140103492A1 SILICON WAFER AND METHOD FOR PRODUCING THE SAME 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20140103492A1
公开(公告)日：2014-04-17
申请号：US14122356
申请日：2012-05-14
申请人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
发明人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
IPC分类号： H01L21/02 , H01L29/34
CPC分类号： H01L21/02024 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3221 , H01L29/30 , H01L29/34
摘要： The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.
摘要翻译：本发明提供一种通过CZ方法生长的无缺陷硅单晶制造硅晶片的方法，该方法包括：制备通过对无缺陷的硅单晶进行切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。因此，本发明的目的是提供一种可以以高产率制造硅晶片的方法，将LPD降低到最小的硅晶片，在检查步骤中具有低故障发生率的硅晶片，以及出货阶段

2. 发明授权

US09337013B2 Silicon wafer and method for producing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US09337013B2
公开(公告)日：2016-05-10
申请号：US14122356
申请日：2012-05-14
申请人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
发明人： Izumi Fusegawa , Ryoji Hoshi , Susumu Sonokawa , Hisayuki Saito
IPC分类号： C30B15/00 , C30B15/14 , C30B15/20 , H01L21/02 , H01L21/322 , H01L29/30 , C30B29/06 , C30B33/00 , C30B33/02 , H01L29/34
CPC分类号： H01L21/02024 , C30B15/00 , C30B15/14 , C30B15/20 , C30B15/203 , C30B29/06 , C30B33/00 , C30B33/02 , H01L21/3221 , H01L29/30 , H01L29/34
摘要： Methods for producing a silicon wafer from a defect-free silicon single crystal grown by a Czochralski (CZ) method are provided. The methods comprise: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which Light Point Defects (LPDs) are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.
摘要翻译：提供了通过Czochralski（CZ）方法生长的无缺陷硅单晶制造硅晶片的方法。所述方法包括：制备通过将无缺陷的硅单晶切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。因此，本发明的目的是提供一种以高产率制造硅晶片的方法，将光点缺陷（LPD）降低到最小的硅晶片，故障发生率低的硅晶片在检查步骤和出货阶段。

3. 发明申请

US20080153186A1 Evaluation Method for Crystal Defect in Silicon Single Crystal Wafer 有权
标题翻译：硅单晶硅晶体缺陷评估方法
公开(公告)号：US20080153186A1
公开(公告)日：2008-06-26
申请号：US11883184
申请日：2006-01-23
申请人： Hisayuki Saito , Yutaka Kitagawara
发明人： Hisayuki Saito , Yutaka Kitagawara
IPC分类号： H01L21/66
CPC分类号： G01N21/47 , G01N21/896 , G01N21/9501 , G01N21/9505 , G01N2021/4707 , G01N2021/4735 , G01N2021/8477 , G01N2021/8965 , H01L22/24
摘要： The present invention provides an evaluation method for a crystal defect in a silicon single crystal wafer based on an infrared laser scattering tomograph method, wherein at least, the silicon single crystal wafer is irradiated with a laser beam, and light that enters the silicon single crystal wafer is scattered by a crystal defect, and the scattered light is detected to evaluate a Direct Surface Oxide Defect (DSOD) and a void defect smaller than the DSOD in the silicon single crystal wafer. As a result, the evaluation method for a crystal defect in a silicon single crystal wafer that can simply and precisely evaluate, e.g., a small DSOD, which can be conventionally evaluated based on a Cu deposition method alone, without requiring a wasteful cost.
摘要翻译：本发明提供一种基于红外激光散射断层摄影法的硅单晶晶片的晶体缺陷的评价方法，其中，至少使用激光束照射硅单晶晶片，并且进入硅单晶的光晶片被晶体缺陷散射，并且检测散射光以评估直接表面氧化物缺陷（DSOD）和小于硅单晶晶片中的DSOD的空隙缺陷。结果，可以简单而精确地评估例如小型DSOD的硅单晶晶片中的晶体缺陷的评估方法，其可以单独地基于Cu沉积方法进行常规评估，而不需要浪费的成本。

4. 发明授权

US08111081B2 Method for evaluating silicon wafer 失效
标题翻译：硅晶片评估方法
公开(公告)号：US08111081B2
公开(公告)日：2012-02-07
申请号：US12448408
申请日：2007-12-14
申请人： Hisayuki Saito
发明人： Hisayuki Saito
IPC分类号： G01R31/34
CPC分类号： H01L22/14 , Y10T29/49117 , Y10T29/49126 , Y10T29/49135 , Y10T29/49144 , Y10T29/49227
摘要： The present invention is a method for evaluating a silicon wafer by measuring, after fabricating a MOS capacitor by forming an insulator film and one or more electrodes sequentially on a silicon wafer, a dielectric breakdown characteristic of the insulator film by applying an electric field from the electrodes thus formed to the insulator film, the method in which the silicon wafer is evaluated at least by setting an area occupied by all the electrodes thus formed to 5% or more of an area of a front surface of the silicon wafer when the one or more electrodes are formed. This provides an evaluation method that can detect a defect by a simple method such as the TDDB method with the same high degree of precision as that of the DSOD method.
摘要翻译：本发明是一种通过在硅晶片上依次形成绝缘体膜和一个或多个电极而制造MOS电容器之后，通过施加电场从绝缘膜的电介质击穿特性来测量硅晶片的方法，这样形成于绝缘体膜上的电极，至少通过将由此形成的全部电极占据的面积设定为硅晶片正面的面积的5％以上的方式来评价硅晶片的方法，形成更多的电极。这提供了通过与DSOD方法相同的高精度的TDDB方法的简单方法来检测缺陷的评估方法。

5. 发明授权

US07718446B2 Evaluation method for crystal defect in silicon single crystal wafer 有权
标题翻译：硅单晶晶体缺陷评估方法
公开(公告)号：US07718446B2
公开(公告)日：2010-05-18
申请号：US11883184
申请日：2006-01-23
申请人： Hisayuki Saito , Yutaka Kitagawara
发明人： Hisayuki Saito , Yutaka Kitagawara
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： G01N21/47 , G01N21/896 , G01N21/9501 , G01N21/9505 , G01N2021/4707 , G01N2021/4735 , G01N2021/8477 , G01N2021/8965 , H01L22/24
摘要： The present invention provides an evaluation method for a crystal defect in a silicon single crystal wafer based on an infrared laser scattering tomograph method, wherein at least, the silicon single crystal wafer is irradiated with a laser beam, and light that enters the silicon single crystal wafer is scattered by a crystal defect, and the scattered light is detected to evaluate a Direct Surface Oxide Defect (DSOD) and a void defect smaller than the DSOD in the silicon single crystal wafer. As a result, the evaluation method for a crystal defect in a silicon single crystal wafer that can simply and precisely evaluate, e.g., a small DSOD, which can be conventionally evaluated based on a Cu deposition method alone, without requiring a wasteful cost.
摘要翻译：本发明提供一种基于红外激光散射断层摄影法的硅单晶晶片的晶体缺陷的评价方法，其中，至少使用激光束照射硅单晶晶片，并且进入硅单晶的光晶片被晶体缺陷散射，并且检测散射光以评估直接表面氧化物缺陷（DSOD）和小于硅单晶晶片中的DSOD的空隙缺陷。结果，可以简单而精确地评估例如小型DSOD的硅单晶晶片中的晶体缺陷的评估方法，其可以单独地基于Cu沉积方法进行常规评估，而不需要浪费的成本。

6. 发明申请

US20100019796A1 METHOD FOR EVALUATING SILICON WAFER 失效
标题翻译：评估硅波的方法
公开(公告)号：US20100019796A1
公开(公告)日：2010-01-28
申请号：US12448408
申请日：2007-12-14
申请人： Hisayuki Saito
发明人： Hisayuki Saito
IPC分类号： G01R31/26
CPC分类号： H01L22/14 , Y10T29/49117 , Y10T29/49126 , Y10T29/49135 , Y10T29/49144 , Y10T29/49227
摘要： The present invention is a method for evaluating a silicon wafer by measuring, after fabricating a MOS capacitor by forming an insulator film and one or more electrodes sequentially on a silicon wafer, a dielectric breakdown characteristic of the insulator film by applying an electric field from the electrodes thus formed to the insulator film, the method in which the silicon wafer is evaluated at least by setting an area occupied by all the electrodes thus formed to 5% or more of an area of a front surface of the silicon wafer when the one or more electrodes are formed. This provides an evaluation method that can detect a defect by a simple method such as the TDDB method with the same high degree of precision as that of the DSOD method.
摘要翻译：本发明是一种通过在硅晶片上依次形成绝缘体膜和一个或多个电极而制造MOS电容器之后，通过施加电场从绝缘膜的电介质击穿特性来测量硅晶片的方法，这样形成于绝缘体膜上的电极，至少通过将由此形成的全部电极占据的面积设定为硅晶片正面的面积的5％以上的方式来评价硅晶片的方法，形成更多的电极。这提供了通过与DSOD方法相同的高精度的TDDB方法的简单方法来检测缺陷的评估方法。

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