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    • 1. 发明授权
    • Ion irradiation system and method
    • 离子照射系统及方法
    • US5331161A
    • 1994-07-19
    • US938611
    • 1992-09-01
    • Iwao OhdomariMasaaki SugimoriJunichi MurayamaMeishoku KohKatsunori NoritakeTakashi MatsukawaHiroaki Shimizu
    • Iwao OhdomariMasaaki SugimoriJunichi MurayamaMeishoku KohKatsunori NoritakeTakashi MatsukawaHiroaki Shimizu
    • G21H5/00G01Q90/00G21K1/04G21K1/087G21K5/04H01J27/02H01J37/09H01J37/147H01J37/26H01J37/28
    • H01J37/265H01J37/28H01J2237/043
    • The present invention concerns an ion irradiation system and has for its object to provide an ion irradiation system and method which enable one or more ions to be applied to a target point with high accuracy. The ion irradiation system according to the present invention comprises: an ion microprobe; a deflector for deflecting an ion microbeam generated by said ion microprobe; a micro slit for extracting a single or predetermined number of ions from said ion microbeam deflected by said deflector; a sample holder mechanism for holding a sample to be irradiated with said single or predetermined number of ions extracted through said micro slit; a scanning electron microscope mechanism for observing the surface of said sample in real time; a secondary electron detecting system for detecting secondary electrons which are emitted from the surface of said sample, said secondary electron detecting system including a secondary electron multiplier; and an electric field control circuit for controlling an electric field which is applied to said deflector, said electric field control circuit being composed of a clock generator, a counter connected to said clock generator and a high-voltage amplifier connected to said counter and having its output connected to said deflector; wherein said counter counts output signal pulses from said secondary electron multiplier and supplies a clock signal to said high-voltage amplifier of said electric field control circuit during counting of said single or predetermined number of ions and stops the supply of said clock signal to said high-voltage amplifier upon completion of counting of said single or predetermined number of ions, whereby said ion microbeam is chopped by said deflector one or more times instantaneously reverse its direction or deflection with respect to said micro slit, thereby extracting said single or predetermined number of ions through said micro slit.
    • 本发明涉及一种离子照射系统,其目的是提供一种能够以高精度将一个或多个离子施加到目标点的离子照射系统和方法。 根据本发明的离子辐射系统包括:离子微探针; 偏转器,用于偏转由所述离子微探针产生的离子微束; 用于从由所述偏转器偏转的所述离子微束中提取单个或预定数量的离子的微缝; 用于保持要通过所述微狭缝提取的所述单个或预定数量离子照射的样品的样品保持器机构; 用于实时观察所述样品表面的扫描电子显微镜机构; 用于检测从所述样品的表面发射的二次电子的二次电子检测系统,所述二次电子检测系统包括二次电子倍增器; 以及用于控制施加到所述偏转器的电场的电场控制电路,所述电场控制电路由时钟发生器,连接到所述时钟发生器的计数器和连接到所述计数器的高压放大器组成,并且具有其 输出连接到所述偏转器; 其中所述计数器对来自所述二次电子倍增器的输出信号脉冲进行计数,并且在所述单个或预定数量的离子计数期间将时钟信号提供给所述电场控制电路的所述高压放大器,并停止将所述时钟信号提供给所述高电平 在完成所述单个或预定数量的离子的计数之后,所述离子微束被所述偏转器斩波一次或多次,相对于所述微缝隙瞬时地反向其方向或偏转,从而提取所述单个或预定数量的 离子通过所述微缝隙。