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1. 发明授权

US5374327A Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5374327A
公开(公告)日：1994-12-20
申请号：US053353
申请日：1993-04-28
申请人： Issei Imahashi , Nobuo Ishii , Chishio Koshimizu
发明人： Issei Imahashi , Nobuo Ishii , Chishio Koshimizu
IPC分类号： H01L21/302 , C23F4/00 , G01N21/68 , H01L21/3065 , G01N21/00
CPC分类号： G01N21/68
摘要： HBr and Cl.sub.2 are used as etching gases and Ar is used as a carrier gas in an ECR etching apparatus in which a semiconductor wafer is processed. Light emitted from plasma generated is dispersed by first and second spectroscopes to detect intensities of those spectra of the plasma which have first and second wavelengths. Both of these spectra are selected from those of an Ar atom. A CPU compares a present value, which represents a ratio of the spectral intensities detected, with a selected value of the ratio previously stored, and adjusts the intensity of a magnetic field such that the present value becomes closer to the selected value. The adjustment of the magnetic field intensity is carried out by changing the value of a current applied to magnetic coils. The magnetic field intensity is a parameter for adjusting an electron temperature of the plasma, and thus, the electron temperature of the plasma is adjusted by adjusting the magnetic field intensity.
摘要翻译： HBr和Cl2用作蚀刻气体，Ar用作加工半导体晶片的ECR蚀刻装置中的载气。由等离子体产生的光被第一和第二光谱分散，以检测具有第一和第二波长的等离子体的那些光谱的强度。这两种光谱均选自Ar原子。 CPU将表示所检测的光谱强度的比率的当前值与先前存储的比率的选定值进行比较，并且调整磁场的强度，使得当前值变得更接近所选择的值。通过改变施加到电磁线圈的电流的值来进行磁场强度的调整。磁场强度是用于调整等离子体的电子温度的参数，因此通过调整磁场强度来调整等离子体的电子温度。

2. 发明授权

US07416330B2 Method and apparatus for measuring temperature of substrate 有权
标题翻译：测量基板温度的方法和装置
公开(公告)号：US07416330B2
公开(公告)日：2008-08-26
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01J5/08 , G01N25/00
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.
摘要翻译：基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量。提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

3. 发明授权

US5571366A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5571366A
公开(公告)日：1996-11-05
申请号：US327798
申请日：1994-10-20
申请人： Nobuo Ishii , Jiro Hata , Chishio Koshimizu , Yoshifumi Tahara , Hiroshi Nishikawa , Isei Imahashi
发明人： Nobuo Ishii , Jiro Hata , Chishio Koshimizu , Yoshifumi Tahara , Hiroshi Nishikawa , Isei Imahashi
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/32174 , H01J37/32935 , H01J37/32963 , H01J37/3299 , H01J2237/334 , H01J2237/3343
摘要： A plasma processing apparatus includes a chamber having a gas inlet port and a gas discharge port, a rest table, arranged in the chamber, for supporting a wafer which has a surface to be processed, a radio frequency antenna for supplying a radio frequency energy into the chamber, and generating an induced plasma in the chamber, and a radio frequency voltage source for applying a radio frequency voltage to the radio frequency antenna. A pressure and/or light variation in the chamber is measured during generation of the plasma, by a measurement system, and the radio frequency voltage source is controlled based on a signal from the measurement system, so that voltage to be applied to the antenna is controlled according to the pressure and/or light in the chamber.
摘要翻译：一种等离子体处理装置，包括具有气体入口和气体排出口的室，设置在室内的用于支撑具有待处理表面的晶片的静止台，用于将射频能量供给的射频天线并且在腔室中产生感应等离子体，以及用于向射频天线施加射频电压的射频电压源。通过测量系统在等离子体的产生期间测量室中的压力和/或光的变化，并且基于来自测量系统的信号来控制射频电压源，使得施加到天线的电压为根据腔室内的压力和/或光线进行控制。

4. 发明授权

US5783492A Plasma processing method, plasma processing apparatus, and plasma generating apparatus 失效
标题翻译：等离子体处理方法，等离子体处理装置和等离子体生成装置
公开(公告)号：US5783492A
公开(公告)日：1998-07-21
申请号：US399939
申请日：1995-03-03
申请人： Kimihiro Higuchi , Chishio Koshimizu , Ryoichiro Koshi , Teruo Iwata , Nobuo Ishii
发明人： Kimihiro Higuchi , Chishio Koshimizu , Ryoichiro Koshi , Teruo Iwata , Nobuo Ishii
IPC分类号： C23C16/02 , C23C16/507 , C23C16/54 , H01L21/00 , H01H1/00
CPC分类号： H01L21/67069 , C23C16/0245 , C23C16/507 , C23C16/54
摘要： A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.
摘要翻译：公开了一种等离子体处理方法，其对配置在处理容器中的目标物体进行等离子体处理，例如等离子体成膜处理。该方法包括将惰性气体引入处理容器的第一步骤，在处理容器中产生惰性气体等离子体的第二步骤，将处理对象物的处理气体引入处理容器的第三步骤，以及在处理容器中产生处理气体的等离子体以处理目标物体的第四步骤。

5. 发明申请

US20090051924A1 APPARATUS FOR MEASURING THICKNESS OF A SUBSTRATE 审中-公开
标题翻译：用于测量基板厚度的装置
公开(公告)号：US20090051924A1
公开(公告)日：2009-02-26
申请号：US12185888
申请日：2008-08-05
申请人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi ITO , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01B11/06
CPC分类号： G01J5/0003 , G01K11/12
摘要： An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.
摘要翻译：提供了一种测量厚度的装置。光源用光照射基板的前表面或后表面。分流器将光分成参考光和测量光。参考光被参考光反射装置反射。光路改变装置改变从参考光反射装置反射的光的光路长度。光接收装置测量来自基板的反射光和来自参考光反射装置的基准光的干涉。基于干涉的测量来测量衬底的前表面，后表面或内部中的至少一个的厚度。

6. 发明申请

US20050271116A1 Method and apparatus for measuring temperature of substrate 有权
公开(公告)号：US20050271116A1
公开(公告)日：2005-12-08
申请号：US11196402
申请日：2005-08-04
申请人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
发明人： Masafumi Ito , Yasuyuki Okamura , Tatsuo Shiina , Nobuo Ishii , Tomohiro Suzuki , Chishio Koshimizu
IPC分类号： G01J5/00 , G01K11/12 , H01L21/324 , G01K1/16
CPC分类号： G01J5/0003 , G01K11/12
摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

7. 发明授权

US08824875B2 Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造装置和半导体制造装置的处理室中的加热部件的方法
公开(公告)号：US08824875B2
公开(公告)日：2014-09-02
申请号：US13034858
申请日：2011-02-25
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
IPC分类号： A21B2/00 , F26B19/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D11/12
摘要： There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
摘要翻译：提供了一种用于加热在处理室中具有基板的半导体制造装置的处理室内的部件并在基板上进行处理的方法。该加热方法包括产生由设置在处理室外部的加热光源产生的加热灯，并且具有能够通过处理室中的第一部分并被吸收到处理室中的第二部分中的波长带与第一部分不同的材料，并且通过使加热灯通过处理室中的第一部分并且将加热灯照射到处理室中的第二部分来加热处理室中的第二部分。

8. 发明授权

US08777483B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US08777483B2
公开(公告)日：2014-07-15
申请号：US13231027
申请日：2011-09-13
申请人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
发明人： Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo , Kenji Nagai
IPC分类号： G01K1/00 , G01J5/00
CPC分类号： G01K11/12
摘要： The temperature measuring apparatus includes: a light source; a first wavelength-dividing unit which wavelength-divides a light from the light source into m lights whose wavelength bands are different from one another; m first dividing units which divides each of the m lights from the first wavelength-dividing unit into n lights; a transmitting unit which transmits lights from the m first dividing unit to measurement points of an object to be measured; a light receiving unit which receives a light reflected by each of the measurement points; and a temperature calculating unit which calculates a temperature of each of the measurement points based on a waveform of the light received by the light receiving unit.
摘要翻译：温度测量装置包括：光源; 将来自光源的光波长分割成波长彼此不同的m个光的第一波长分割单元; m个第一分割单元，其将每个m个光从第一波长分割单元分成n个灯; 发射单元，其将来自第m分割单元的光传输到被测量物体的测量点; 光接收单元，其接收由每个测量点反射的光; 以及温度计算单元，其基于由光接收单元接收的光的波形来计算每个测量点的温度。

9. 发明授权

US08764288B2 Temperature measuring apparatus and temperature measuring method 有权
标题翻译：温度测量仪和温度测量方法
公开(公告)号：US08764288B2
公开(公告)日：2014-07-01
申请号：US13476264
申请日：2012-05-21
申请人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
发明人： Jun Abe , Tatsuo Matsudo , Chishio Koshimizu
IPC分类号： G01J5/00 , G01B9/02
CPC分类号： G01J5/02 , G01K1/026 , G01K11/125
摘要： A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.
摘要翻译：温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。

10. 发明授权

US08741095B2 Plasma processing apparatus, plasma processing method, and computer readable storage medium 有权
标题翻译：等离子体处理装置，等离子体处理方法和计算机可读存储介质
公开(公告)号：US08741095B2
公开(公告)日：2014-06-03
申请号：US12415466
申请日：2009-03-31
申请人： Chishio Koshimizu
发明人： Chishio Koshimizu
IPC分类号： C23C16/509 , H01L21/3065 , C23F1/00
CPC分类号： H01J37/32165 , H01J37/32091
摘要： A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for supporting a substrate to be processed in the processing chamber; a processing gas supply unit for supplying a processing gas into a processing space; a plasma excitation unit for generating a plasma by exciting the processing gas in the processing chamber; a first radio frequency power supply unit for supplying a first radio frequency power to the first electrode to attract ions in the plasma to the substrate; and a first radio frequency power amplitude modulation unit for modulating an amplitude of the first radio frequency power at a predetermined interval. The plasma processing apparatus further includes a first radio frequency power frequency modulation unit for modulating a frequency of the first radio frequency power in substantially synchronously with the amplitude modulation of the first radio frequency power.
摘要翻译：等离子体处理装置包括真空排气处理室; 用于在所述处理室中支撑待处理的基板的第一电极; 处理气体供应单元，用于将处理气体供应到处理空间中; 等离子体激发单元，用于通过激励处理室中的处理气体来产生等离子体; 第一射频电源单元，用于向第一电极提供第一射频功率以将等离子体中的离子吸引到衬底; 以及用于以预定间隔调制第一射频功率的幅度的第一射频功率幅度调制单元。等离子体处理装置还包括第一射频功率频率调制单元，用于与第一射频功率的幅度调制基本同步地调制第一射频功率的频率。

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