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1. 发明授权

US5374327A Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US5374327A
公开(公告)日：1994-12-20
申请号：US053353
申请日：1993-04-28
申请人： Issei Imahashi , Nobuo Ishii , Chishio Koshimizu
发明人： Issei Imahashi , Nobuo Ishii , Chishio Koshimizu
IPC分类号： H01L21/302 , C23F4/00 , G01N21/68 , H01L21/3065 , G01N21/00
CPC分类号： G01N21/68
摘要： HBr and Cl.sub.2 are used as etching gases and Ar is used as a carrier gas in an ECR etching apparatus in which a semiconductor wafer is processed. Light emitted from plasma generated is dispersed by first and second spectroscopes to detect intensities of those spectra of the plasma which have first and second wavelengths. Both of these spectra are selected from those of an Ar atom. A CPU compares a present value, which represents a ratio of the spectral intensities detected, with a selected value of the ratio previously stored, and adjusts the intensity of a magnetic field such that the present value becomes closer to the selected value. The adjustment of the magnetic field intensity is carried out by changing the value of a current applied to magnetic coils. The magnetic field intensity is a parameter for adjusting an electron temperature of the plasma, and thus, the electron temperature of the plasma is adjusted by adjusting the magnetic field intensity.
摘要翻译： HBr和Cl2用作蚀刻气体，Ar用作加工半导体晶片的ECR蚀刻装置中的载气。由等离子体产生的光被第一和第二光谱分散，以检测具有第一和第二波长的等离子体的那些光谱的强度。这两种光谱均选自Ar原子。 CPU将表示所检测的光谱强度的比率的当前值与先前存储的比率的选定值进行比较，并且调整磁场的强度，使得当前值变得更接近所选择的值。通过改变施加到电磁线圈的电流的值来进行磁场强度的调整。磁场强度是用于调整等离子体的电子温度的参数，因此通过调整磁场强度来调整等离子体的电子温度。

2. 发明授权

US06431114B1 Method and apparatus for plasma processing 有权
标题翻译：等离子体处理方法和装置
公开(公告)号：US06431114B1
公开(公告)日：2002-08-13
申请号：US09659340
申请日：2000-09-12
申请人： Issei Imahashi , Nobuo Ishii , Satoru Kawakami , Yoshinobu Kawai , Yoko Ueda
发明人： Issei Imahashi , Nobuo Ishii , Satoru Kawakami , Yoshinobu Kawai , Yoko Ueda
IPC分类号： C23C1600
CPC分类号： H01J37/09 , H01J37/32192 , H01J37/32678
摘要： The present invention aims to decrease reflected waves in a vacuum chamber to suppress standing waves, thereby easily controlling a plasma density so that uniform treatment can be performed. An electromagnetic wave absorber 6 composed of a resistor such as carbon, a dielectric having a large dielectric loss, such as water, or a magnetic material such as ferrite-based ceramic, or a combination of these, is provided on an inner wall surface of a first vacuum chamber 21. Microwaves introduced from a waveguide 25 into the first vacuum chamber 21 via a transmissive window 23 are absorbed to the electromagnetic wave absorber 6 to suppress reflected waves, whereby a plasma density distribution with a nearly planned pattern is easily formed at an ECR point.
摘要翻译：本发明旨在减少真空室中的反射波以抑制驻波，从而容易地控制等离子体密度，从而可以进行均匀的处理。由诸如碳的电阻器，诸如水等介电损耗大的电介质或诸如铁氧体基陶瓷的磁性材料或其组合的电磁波吸收体6设置在内壁表面上第一真空室21.经由透射窗23从波导管25引入第一真空室21的微波被吸收到电磁波吸收体6以抑制反射波，由此容易地形成具有接近计划的图案的等离子体密度分布一个ECR点。

3. 发明授权

US5342472A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5342472A
公开(公告)日：1994-08-30
申请号：US928428
申请日：1992-08-12
申请人： Issei Imahashi , Nobuo Ishii
发明人： Issei Imahashi , Nobuo Ishii
IPC分类号： H01J37/32 , H05H1/00
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32678 , H01J37/32706
摘要： Microwave inlet ports are formed on a microwave transmission window above a plasma generation chamber. The distance from the microwave inlet ports to a support surface of a wafer support table is set to be an integer multiple of 1/2 the wavelength of the microwave. Upper and lower magnetic poles opposite to each other are arranged above and below the chamber to form a magnetic field having a uniform strength in the chamber. The strength of the magnetic field is set to be 865 Gauss as a value slightly deviating from 875 Gauss as a value satisfying ideal conditions of an electron cyclotron resonance at a microwave wavelength of 2.45 GHz. The electron energy is suppressed, and damage to the surface of a wafer can be suppressed in wafer surface processing using a plasma.
摘要翻译：微波入口形成在等离子体产生室上方的微波传输窗口上。从微波入口到晶片支撑台的支撑表面的距离设定为微波波长的1/2的整数倍。彼此相对的上下磁极设置在室的上方和下方，以形成在室中具有均匀强度的磁场。磁场的强度被设定为865高斯，作为微波波长为2.45GHz的电子回旋共振理想条件的值，稍微偏离875高斯的值。抑制电子能量，并且可以在使用等离子体的晶片表面处理中抑制对晶片表面的损伤。

4. 发明授权

US5173641A Plasma generating apparatus 失效
标题翻译：等离子体发生装置
公开(公告)号：US5173641A
公开(公告)日：1992-12-22
申请号：US757953
申请日：1991-09-12
申请人： Issei Imahashi , Nobuo Ishii
发明人： Issei Imahashi , Nobuo Ishii
IPC分类号： H01J37/32
CPC分类号： H01J37/32623 , H01J37/32192 , H01J37/32678
摘要： A plasma generating appartus according to the present invention generates a plasma by cyclotron movement of electrons. The apparatus features microwave introducing guides for introducing microwaves, a reaction chamber in which a plasma is generated based on introduced microwaves, a magnetic field generating section, and solenoid coils. The magnetic field generating section features at least a pair of magnetic poles having mutually facing concave surfaces, and a yoke for coupling the magnetic poles to constitute a loop of magnetic force lines. The magnetic poles are arranged to face each other with the microwave introducing guides and the reaction chamber interposed, and the magnetic poles generate a magnetic field of a predetermined magnetic flux density consisting of magnetic force lines directed vertically to a major surface of a sample placed on a support table in the reaction chamber. The solenoid coils can vary the magnetic field of a predetermined magnetic flux density generated by the magnetic field generating section to a magnetic field of a desired magnetic flux density.
摘要翻译：根据本发明的等离子体产生装置通过电子的回旋加速器运动产生等离子体。该装置具有用于引入微波的微波引入引导件，基于引入的微波产生等离子体的反应室，磁场产生部分和电磁线圈。磁场产生部具有至少一对具有相互面对的凹面的磁极和用于耦合磁极以构成磁力线的环的磁轭。磁极被布置为彼此面对，微波引入引导件和反应室被插入，并且磁极产生预定磁通密度的磁场，该磁场由垂直于放置在样品上的样品的主表面的磁力线组成反应室中的支撑台。电磁线圈可以将由磁场产生部产生的预定磁通密度的磁场改变为所需磁通密度的磁场。

5. 发明授权

US5372836A Method of forming polycrystalling silicon film in process of manufacturing LCD 失效
标题翻译：在制造LCD过程中形成多晶硅膜的方法
公开(公告)号：US5372836A
公开(公告)日：1994-12-13
申请号：US38621
申请日：1993-03-26
申请人： Issei Imahashi , Kiichi Hama , Jiro Hata
发明人： Issei Imahashi , Kiichi Hama , Jiro Hata
IPC分类号： C23C16/24 , C23C16/56 , G02F1/1362 , H01L21/20 , B05D3/06 , H01L21/461 , H01L21/302
CPC分类号： C23C16/24 , C23C16/56 , H01L21/2026 , G02F1/13454
摘要： In a method of forming a polycrystalline silicon film in a process of manufacturing an LCD, a hydrogenated amorphous silicon film is formed on a glass substrate by plasma CVD throughout areas serving as the pixel portion and driver unit of the LCD. A laser beam is radiated on a selected region of the film on the area serving as the driver unit. The energy of the laser beam is set such that hydrogen in the film is discharged without crystallizing the film and damaging the film. The energy of the laser beam is gradually increased to gradually discharge hydrogen from the film. The energy of the laser beam is finally set such that the film is transformed into a polycrystalline silicon film. The amorphous silicon film can be poly-crystallized without damaging the film by the discharge of hydrogen.
摘要翻译：在制造LCD的过程中形成多晶硅膜的方法中，在用作LCD的像素部分和驱动单元的区域中，通过等离子体CVD在玻璃基板上形成氢化非晶硅膜。在作为驱动器单元的区域上的膜的选定区域上照射激光束。激光束的能量被设定为使得膜中的氢气不会使膜结晶而被排出并损坏膜。激光束的能量逐渐增加，逐渐从膜中排出氢。最终将激光束的能量设定为使得膜转变为多晶硅膜。非晶硅膜可以多结晶而不会通过氢气的排出而损坏膜。

6. 发明授权

US5338362A Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments 失效
标题翻译：包括连续旋转晶片台和多个室隔室的半导体晶片处理装置
公开(公告)号：US5338362A
公开(公告)日：1994-08-16
申请号：US111891
申请日：1993-08-26
申请人： Issei Imahashi
发明人： Issei Imahashi
IPC分类号： C23C16/44 , C23C16/54 , C23C16/00 , C23C16/46 , C23C16/50
CPC分类号： C23C16/54 , C23C16/4412
摘要： An apparatus for forming a CVD film on semiconductor wafers includes a process chamber in which a rotary table capable of loading five wafers is provided. The interior of the process chamber is divided into six compartments by radially arranged partitions. The compartments comprise a wafer exchanging room for loading and unloading wafers, a first process room for forming a silicon film on the wafers, a second process room for oxidizing the silicon film into silicon oxide film and three exhaust rooms provided between the wafer exchanging room, the first process room and the second process room. The wafers are processed on the continuously rotating table. As the table is rotated, the wafers are processed in the first and second process rooms and unnecessary products produced in them are successively removed in the exhaust rooms.
摘要翻译：在半导体晶片上形成CVD膜的装置包括：处理室，其中设置有能够加载五个晶片的旋转台。处理室的内部通过径向布置的隔板分成六个隔室。隔间包括用于装载和卸载晶片的晶片交换室，用于在晶片上形成硅膜的第一处理室，用于将硅膜氧化成氧化硅膜的第二处理室和设置在晶片交换室之间的三个排气室，第一个处理室和第二个处理室。在连续旋转的工作台上处理晶片。当桌子旋转时，晶片在第一和第二处理室中被处理，并且在其中产生的不必要的产品在排气室中被连续地移除。

7. 发明授权

US4377028A Method for registering a mask pattern in a photo-etching apparatus for semiconductor devices 失效
标题翻译：用于在半导体器件的光刻设备中登记掩模图案的方法
公开(公告)号：US4377028A
公开(公告)日：1983-03-22
申请号：US213960
申请日：1980-12-08
申请人： Issei Imahashi
发明人： Issei Imahashi
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027 , H01L21/312
CPC分类号： G03F9/7076 , Y10S438/975 , Y10T29/41
摘要： A method is provided for registering a pattern on a mask plate with a pattern already formed on a semiconductor wafer. A reflector group is provided on the wafer comprising a plurality of reflectors having a predetermined shape, interval and alignment. Two window groups are provided at predetermined positions on the mask plate. Each window group comprises a plurality of windows having a predetermined shape, interval and alignment that corresponds to the shape, interval and alignment of the reflector group. One of the window groups is provided with a staggered phase relationship with the other window group such that when one of the wafer or the mask plate is moved relative to the other, variations in the quantity of light reflected by the reflector group and passed through the respective window groups is used to determine the relative position of the wafer and the mask plate.
摘要翻译：提供了一种用于将掩模板上已经形成有图案的图案对准在半导体晶片上的方法。在晶片上设置有反射器组，其具有预定形状，间隔和对准的多个反射器。在掩模板上的预定位置设置两个窗口组。每个窗口组包括具有与反射器组的形状，间隔和对准相对应的预定形状，间隔和对准的多个窗口。窗口组中的一个与另一个窗口组具有交错的相位关系，使得当晶片或掩模板中的一个相对于另一窗口组相对移动时，反射器组反射的光的量的变化通过使用相应的窗口组来确定晶片和掩模板的相对位置。

8. 发明授权

US5695564A Semiconductor processing system 失效
标题翻译：半导体处理系统
公开(公告)号：US5695564A
公开(公告)日：1997-12-09
申请号：US510668
申请日：1995-08-03
申请人： Issei Imahashi
发明人： Issei Imahashi
IPC分类号： C23C14/56 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67161 , C23C14/568 , C23C16/54 , H01L21/67184 , Y10S414/139
摘要： A multi-chamber type process system for processing semiconductor wafers is constituted such that a plurality of units selected from process units, transfer units, interconnection units and in/out units are connected via gate valves. Each of the units has a casing with one or more openings through which each of the wafers passes. The gate valve is attached to a flange provided at the opening, thereby connecting the openings openably and air-tightly. The openings are situated such that the units are connected in a direction defined in units of substantially 90.degree., and the direction of transfer of the wafers is defined in units of substantially 90.degree.. Those of the openings of the casings of the units, which are not connected to the other openings of the casings, are air-tightly closed by blind plates such that the casings of the units form a vacuum chamber. The internal pressure of each of the casings of the units can be independently controlled.
摘要翻译：用于处理半导体晶片的多室型处理系统被构造成使得从处理单元，转印单元，互连单元和输入/输出单元中选出的多个单元通过闸阀连接。每个单元具有带有一个或多个开口的壳体，每个晶片通过该开口通过。闸阀连接到设置在开口处的凸缘，从而可开启和气密地连接开口。这些开口被设置为使得单元以基本上为90度的单位限定的方向连接，并且晶片的传送方向以基本上为90度为单位定义。未连接到壳体的其他开口的单元的壳体的开口的那些开口由盲板气密地封闭，使得单元的壳体形成真空室。单元的每个壳体的内部压力可以独立控制。

9. 发明授权

US4441250A Apparatus for registering a mask pattern in a photo-etching apparatus for semiconductor devices 失效
标题翻译：用于在半导体器件的光刻设备中登记掩模图案的设备
公开(公告)号：US4441250A
公开(公告)日：1984-04-10
申请号：US461694
申请日：1983-01-28
申请人： Issei Imahashi
发明人： Issei Imahashi
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027 , H01L21/68 , H01L21/312
CPC分类号： G03F9/7076 , Y10S438/975 , Y10T29/41
摘要： An apparatus is provided for registering a pattern on a mask plate with a pattern already formed on a semiconductor wafer. A reflector group is provided on the wafer comprising a plurality of reflectors having a predetermined shape, interval and alignment. Two window groups are provided at predetermined positions on the mask plate. Each window group comprises a plurality of windows having a predetermined shape, interval and alignment that corresponds to the shape, interval and alignment of the reflector group. One of the window groups is provided with a staggered phase relationship with the other window group such that when one of the wafer or the mask plate is moved relative to the other, variations in the quantity of light reflected by the reflector group and passed through the respective window groups is used to determine the relative position of the wafer and the mask plate.
摘要翻译：提供一种装置，用于将掩模板上已经形成图案的图案对准在半导体晶片上。在晶片上设置有反射器组，其具有预定形状，间隔和对准的多个反射器。在掩模板上的预定位置设置两个窗口组。每个窗口组包括具有与反射器组的形状，间隔和对准相对应的预定形状，间隔和对准的多个窗口。窗口组中的一个被提供与另一个窗口组的交错相位关系，使得当晶片或掩模板之一相对于另一窗口组移动时，由反射器组反射并穿过反射器组的光的量的变化使用相应的窗口组来确定晶片和掩模板的相对位置。

10. 发明授权

US4397078A Method and apparatus for measuring a gap distance between a mask and a wafer to be used in fabrication of semiconductor integrated circuits 失效
标题翻译：用于测量在半导体集成电路的制造中使用的掩模和晶片之间的间隙距离的方法和装置
公开(公告)号：US4397078A
公开(公告)日：1983-08-09
申请号：US289199
申请日：1981-08-03
申请人： Issei Imahashi
发明人： Issei Imahashi
IPC分类号： G03F1/00 , G03F1/38 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/66 , H01L21/68
CPC分类号： G03F9/7053 , G03F9/703 , H01L21/30 , Y10S438/943 , Y10S438/975
摘要： On a mask to be used in fabrication of semiconductor integrated circuits is formed an electrode outside of an integrated circuit pattern area with the same material as said pattern area in the same thickness as said pattern area, this mask is positioned above a wafer as separated therefrom at a minute gap distance, and the gap distance between the mask and the wafer is measured by detecting an electrostatic capacitance between the electrode and the wafer.
摘要翻译：在用于制造半导体集成电路的掩模上，在与所述图案区域相同厚度的与所述图案区域相同的材料的集成电路图案区域外部形成电极，该掩模位于与晶片分离的晶片之上在微小间隙距离处，并且通过检测电极和晶片之间的静电电容来测量掩模和晶片之间的间隙距离。

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