专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08883526B2 Image pickup device, its control method, and camera 有权
标题翻译：图像拾取装置，其控制方法和摄像头
公开(公告)号：US08883526B2
公开(公告)日：2014-11-11
申请号：US12960701
申请日：2010-12-06
申请人： Akira Okita , Toru Koizumi , Isamu Ueno , Katsuhito Sakurai
发明人： Akira Okita , Toru Koizumi , Isamu Ueno , Katsuhito Sakurai
IPC分类号： H04N5/335 , H04N3/14 , H04N5/235 , H01L27/146
CPC分类号： H04N3/155 , H01L27/14603 , H04N5/235 , H04N5/2355 , H04N5/35572 , H04N5/3591 , H04N5/378
摘要： An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.
摘要翻译：一种图像拾取装置，其中从光电转换单元溢出一段光电产生和累积载流子的载流子的一部分可以流入浮动扩散区域，并且像素信号生成单元根据载流子生成像素信号存储在光电转换单元中并且已经溢出到浮动扩散区域中的载流子。动态范围的扩大和图像质量的提高可以通过控制流入浮动扩散区域的载流子与从这种光电转换单元溢出的载流子的比例高精度地提供。

2. 发明授权

US08089545B2 Solid-state image pickup device and control method thereof, and camera 有权
标题翻译：固态摄像装置及其控制方法及相机
公开(公告)号：US08089545B2
公开(公告)日：2012-01-03
申请号：US12431831
申请日：2009-04-29
申请人： Toru Koizumi , Akira Okita , Katsuhito Sakurai , Isamu Ueno
发明人： Toru Koizumi , Akira Okita , Katsuhito Sakurai , Isamu Ueno
IPC分类号： H04N5/335
CPC分类号： H04N5/369 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： A solid-state image pickup device having a pixel includes a photoelectric conversion unit generating and accumulating charge by photoelectric conversion; a charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. A part of charge spilling from the photoelectric conversion unit is caused to flow into the charge holding unit and thereby extend the dynamic range, and at the same time, improve image quality.
摘要翻译：具有像素的固体摄像装置包括通过光电转换产生并积累电荷的光电转换单元; 电荷保持单元被遮光，并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元（SF-MOS）放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元（Tx-MOS）以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元（Ty-MOS）。使从光电转换单元溢出的电荷的一部分流入电荷保持单元，从而延长动态范围，同时提高图像质量。

3. 发明申请

US20090213260A1 SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA 有权
标题翻译：固态图像拾取装置及其控制方法及相机
公开(公告)号：US20090213260A1
公开(公告)日：2009-08-27
申请号：US12431831
申请日：2009-04-29
申请人： TORU KOIZUMI , Akira Okita , Katsuhito Sakurai , Isamu Ueno
发明人： TORU KOIZUMI , Akira Okita , Katsuhito Sakurai , Isamu Ueno
IPC分类号： H04N3/14
CPC分类号： H04N5/369 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.
摘要翻译：本发明的目的是使光电转换单元的一部分电荷溢出流入电荷保持单元，从而延长动态范围，同时提高图像质量。提供一种具有像素的固体摄像装置，该像素包括：光电转换单元，通过光电转换产生和累积电荷; 第一电荷保持单元被遮光，并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元（SF-MOS）放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元（Tx-MOS）以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元（Ty-MOS）。

4. 发明授权

US07274394B2 Solid state image pickup device and manufacturing method therefor 有权
标题翻译：固态摄像装置及其制造方法
公开(公告)号：US07274394B2
公开(公告)日：2007-09-25
申请号：US10622540
申请日：2003-07-21
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N3/14 , H01L21/336 , H01L31/062 , H01L27/00
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A method of manufacturing a MOS-type solid-state image pickup device having a photoelectric conversion unit, a transfer MOS transistor, a gate electrode disposed on an insulating film and a semiconductor substrate on which the photoelectric conversion unit and the transfer MOS transistor are disposed, includes a first step of forming a second semiconductor region by ion implanting an impurity of a second conductivity type at a first angle with a first energy using the gate electrode as a mask, and a second step of forming a fifth semiconductor region by ion implanting an impurity of the second conductivity type at a second angle with a second energy using the gate electrode as a mask. A fourth semiconductor region is formed by ion implanting an impurity of the second conductivity type. The second energy is smaller than the first energy, and the first and second angles are respectively angles to a direction normal to a surface of the semiconductor substrate, with the second angle being larger than the first angle, and the first and third steps being performed separately.
摘要翻译：一种制造具有光电转换单元，转移MOS晶体管，设置在绝缘膜上的栅极电极和设置有光电转换单元和转移MOS晶体管的半导体衬底的MOS型固体摄像器件的方法包括通过使用栅电极作为掩模以第一角度以第一角度离子注入第二导电类型的杂质形成第二半导体区域的第一步骤，以及通过离子注入形成第五半导体区域的第二步骤使用栅电极作为掩模，以第二能量以第二角度的第二导电类型的杂质。通过离子注入第二导电类型的杂质形成第四半导体区域。第二能量小于第一能量，并且第一和第二角度分别是与垂直于半导体衬底的表面的方向的角度，其中第二角度大于第一角度，并且执行第一和第三步骤分别。

5. 发明授权

US07129985B1 Image sensing apparatus arranged on a single substrate 有权
标题翻译：图像感测装置布置在单个基板上
公开(公告)号：US07129985B1
公开(公告)日：2006-10-31
申请号：US09444675
申请日：1999-11-22
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Tetsunobu Kochi , Katsuhito Sakurai , Toshiaki Endo , Hiroki Hiyama
IPC分类号： H04N5/225 , H04N5/335
CPC分类号： H04N5/335
摘要： A sensor integrated on a single semiconductor substrate comprises a sensor block including a pixel unit including a plurality of pixels each including a light-receiving element and scanning units for selecting a pixel of the pixel unit, and a signal processing block for processing a signal output from the sensor block. To reduce noise and power consumption, the power supply voltage or the amplitude or high level of a clock signal used in the sensor block is higher than the power supply voltage of the signal processing block.
摘要翻译：集成在单个半导体衬底上的传感器包括传感器块，其包括像素单元，该像素单元包括多个像素，每个像素包括光接收元件和用于选择像素单元的像素的扫描单元，以及用于处理信号输出的信号处理块从传感器块。为了降低噪声和功耗，传感器模块中使用的时钟信号的电源电压或振幅或高电平高于信号处理模块的电源电压。

6. 发明申请

US20060158539A1 Solid-state image pickup device and control method thereof, and camera 有权
公开(公告)号：US20060158539A1
公开(公告)日：2006-07-20
申请号：US11332734
申请日：2006-01-13
申请人： Toru Koizumi , Akira Okita , Katsuhito Sakurai , Isamu Ueno
发明人： Toru Koizumi , Akira Okita , Katsuhito Sakurai , Isamu Ueno
IPC分类号： H04N5/335
CPC分类号： H04N5/369 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.

7. 发明申请

US20120146100A1 SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：固态图像拾取器件及其制造方法
公开(公告)号：US20120146100A1
公开(公告)日：2012-06-14
申请号：US13364601
申请日：2012-02-02
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/148
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region.
摘要翻译： MOS型固态摄像装置设置在半导体衬底上，并包括具有第一半导体区域，第二半导体区域和第三半导体区域的光电转换单元。传输栅电极设置在绝缘膜上并将载体从第二半导体区传送到第四半导体区，放大MOS晶体管具有与第四半导体区连接的栅电极。另外，第五半导体区域在栅极下方连续地设置到第二半导体区域。第三半导体区域的整个表面被绝缘膜覆盖，并且与传输栅极横向相对的第三半导体区域的侧部与第一半导体区域接触。

8. 发明授权

US07872286B2 Image pickup device, its control method, and camera 有权
标题翻译：图像拾取装置，其控制方法和摄像头
公开(公告)号：US07872286B2
公开(公告)日：2011-01-18
申请号：US11326416
申请日：2006-01-06
申请人： Akira Okita , Toru Koizumi , Isamu Ueno , Katsuhito Sakurai
发明人： Akira Okita , Toru Koizumi , Isamu Ueno , Katsuhito Sakurai
IPC分类号： H01L31/113
CPC分类号： H04N3/155 , H01L27/14603 , H04N5/235 , H04N5/2355 , H04N5/35572 , H04N5/3591 , H04N5/378
摘要： An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy.
摘要翻译：一种图像拾取装置，其中从光电转换单元溢出一段光电产生和累积载流子的载流子的一部分可以流入浮动扩散区域，并且像素信号生成单元根据载流子生成像素信号存储在光电转换单元中并且已经溢出到浮动扩散区域中的载流子。动态范围的扩大和图像质量的提高可以通过控制流入浮动扩散区域的载流子与从这种光电转换单元溢出的载流子的比例高精度地提供。

9. 发明授权

US07724292B2 Color filter array for a CMOS sensor for generating a color signal in an image pickup apparatus 有权
标题翻译：用于在图像拾取装置中产生彩色信号的CMOS传感器的滤色器阵列
公开(公告)号：US07724292B2
公开(公告)日：2010-05-25
申请号：US11473024
申请日：2006-06-23
申请人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Isamu Ueno , Shigetoshi Sugawa , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N5/335
CPC分类号： H04N9/045
摘要： An image pickup apparatus having a plurality of pixels; and a color filter array of four colors disposed on the plurality of pixels, wherein the color filter away has a periodicity of two rows×two columns, and colors of four color filters in a periodical unit of two rows×two columns are all different.
摘要翻译：一种具有多个像素的图像拾取装置; 以及设置在所述多个像素上的四色滤色器阵列，其中所述滤色镜的周期性为两行×两列，并且在两列×两列的周期性单位中的四个滤色器的颜色都不同。

10. 发明授权

US07538810B2 Solid-state image pickup device and control method thereof, and camera 有权
标题翻译：固态摄像装置及其控制方法及相机
公开(公告)号：US07538810B2
公开(公告)日：2009-05-26
申请号：US11332734
申请日：2006-01-13
申请人： Toru Koizumi , Akira Okita , Katsuhito Sakurai , Isamu Ueno
发明人： Toru Koizumi , Akira Okita , Katsuhito Sakurai , Isamu Ueno
IPC分类号： H04N3/14
CPC分类号： H04N5/369 , H04N5/3559 , H04N5/3592 , H04N5/37452
摘要： An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit.
摘要翻译：本发明的目的是使光电转换单元的一部分电荷溢出流入电荷保持单元，从而延长动态范围，同时提高图像质量。提供一种具有像素的固体摄像装置，该像素包括：光电转换单元，通过光电转换产生和累积电荷; 第一电荷保持单元被遮光，并且适于在光电转换单元产生并累积电荷的时段期间累积从光电转换单元溢出的电荷的一部分; 放大单元（SF-MOS）放大电荷; 将累积在光电转换单元中的电荷传送到放大单元的第一传送单元（Tx-MOS）以及将在第一电荷保持单元中累积的电荷转移到放大单元的第二转印单元（Ty-MOS）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式