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1. 发明申请

US20100019349A1 METHOD FOR FABRICATING CONDUCTING PLATES FOR A HIGH-Q MIM CAPACITOR 有权
标题翻译：用于制造高Q MIM电容器的导电板的方法
公开(公告)号：US20100019349A1
公开(公告)日：2010-01-28
申请号：US12569750
申请日：2009-09-29
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L29/92
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

2. 发明申请

US20080089007A1 Method for fabricating conducting plates for a high-Q MIM capacitor 有权
标题翻译：制造高Q MIM电容器导电板的方法
公开(公告)号：US20080089007A1
公开(公告)日：2008-04-17
申请号：US11549052
申请日：2006-10-12
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01G4/008 , H01L21/64
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

3. 发明授权

US07601604B2 Method for fabricating conducting plates for a high-Q MIM capacitor 有权
标题翻译：制造高Q MIM电容器导电板的方法
公开(公告)号：US07601604B2
公开(公告)日：2009-10-13
申请号：US11549052
申请日：2006-10-12
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/4763
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

4. 发明申请

US20080057658A1 METHOD FOR FABRICATING A THICK COPPER LINE AND COPPER INDUCTOR RESULTING THEREFROM 有权
标题翻译：用于制造厚铜线和铜电解质的方法
公开(公告)号：US20080057658A1
公开(公告)日：2008-03-06
申请号：US11470552
申请日：2006-09-06
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/20
CPC分类号： H01L21/76885 , H01L21/76834 , H01L23/5227 , H01L23/53238 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.
摘要翻译：公开了一种在衬底上形成一个或多个电感器的方法。该方法包括在衬底上形成第一介电材料，在第一介电材料中形成沟槽，并用铜基本上填充沟槽以形成一个或多个电感器。去除第一电介质材料，并在铜上形成第二电介质材料。第二电介质材料从铜的最上部去除，因此在铜的侧壁上留下一部分第二电介质材料。

5. 发明授权

US08022548B2 Method for fabricating conducting plates for a high-Q MIM capacitor 有权
标题翻译：制造高Q MIM电容器导电板的方法
公开(公告)号：US08022548B2
公开(公告)日：2011-09-20
申请号：US12569750
申请日：2009-09-29
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/00
CPC分类号： H01L27/0805 , H01L21/76838 , H01L28/75
摘要： A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
摘要翻译：公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。第一铜层通过第一铜阻挡层与衬底基本上化学隔离。在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。第二铜层以非镶嵌工艺形成。

6. 发明授权

US07776705B2 Method for fabricating a thick copper line and copper inductor resulting therefrom 有权
标题翻译：用于制造由其产生的粗铜线和铜电感器的方法
公开(公告)号：US07776705B2
公开(公告)日：2010-08-17
申请号：US11470552
申请日：2006-09-06
申请人： Isaiah O. Oladeji , Alan Cuthbertson
发明人： Isaiah O. Oladeji , Alan Cuthbertson
IPC分类号： H01L21/20
CPC分类号： H01L21/76885 , H01L21/76834 , H01L23/5227 , H01L23/53238 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.
摘要翻译：公开了一种在衬底上形成一个或多个电感器的方法。该方法包括在衬底上形成第一介电材料，在第一介电材料中形成沟槽，并用铜基本上填充沟槽以形成一个或多个电感器。去除第一电介质材料，并在铜上形成第二电介质材料。第二电介质材料从铜的最上部去除，因此在铜的侧壁上留下一部分第二电介质材料。

7. 发明授权

US08361443B2 Peptide-based compounds 失效
公开(公告)号：US08361443B2
公开(公告)日：2013-01-29
申请号：US11570090
申请日：2005-06-15
申请人： Alan Cuthbertson
发明人： Alan Cuthbertson
IPC分类号： A61K49/04
CPC分类号： A61K51/088 , A61K47/60 , A61K47/62 , A61K47/64 , A61K51/082 , C07K7/02 , C07K7/06 , C07K14/70546 , C07K14/78
摘要： The invention relates to new peptide-based compounds for use as diagnostic imaging agents or as therapeutic agents wherein the agents comprise targeting vectors which bind to integrin receptors.

8. 发明申请

US20120251449A1 ALDH: A COMPOUND FOR CANCER STEM CELL IMAGING 审中-公开
标题翻译： ALDH：用于癌症干细胞成像的化合物
公开(公告)号：US20120251449A1
公开(公告)日：2012-10-04
申请号：US13510398
申请日：2010-12-22
申请人： Vijaya Raj Kuniyil Kulangara , Alan Cuthbertson , Peter Iveson , Chitralekha Rangaswamy , Veena Rao , Rajiv Bhalla
发明人： Vijaya Raj Kuniyil Kulangara , Alan Cuthbertson , Peter Iveson , Chitralekha Rangaswamy , Veena Rao , Rajiv Bhalla
IPC分类号： A61K51/04 , C07C47/55 , A61P35/00 , C07C223/06 , C07C223/04 , C07C47/353
CPC分类号： A61K31/136 , A61K51/04
摘要： The present invention claims fluoro- & iodo-containing aldehydes as ALDH substrates for use as diagnostic imaging agents or as therapeutic agents. The aldehydes are both directly and indirectly attached to an aromatic or a straight chain ring. ALDH activity was monitored either by the formation of acid-product or consumption of aldehyde substrates.
摘要翻译：本发明要求氟 - 碘基醛作为ALDH底物用作诊断显像剂或作为治疗剂。醛直接和间接连接到芳环或直链环上。通过酸产物的形成或醛底物的消耗来监测ALDH活性。

9. 发明授权

US08273325B2 Contrast agents 失效
标题翻译：对比剂
公开(公告)号：US08273325B2
公开(公告)日：2012-09-25
申请号：US12519183
申请日：2007-12-19
申请人： Helge Tolleshaug , Alan Cuthbertson , Hege Karlsen
发明人： Helge Tolleshaug , Alan Cuthbertson , Hege Karlsen
IPC分类号： A61K51/00 , A61M36/14
CPC分类号： A61K49/0054 , A61K49/0032 , A61K49/0056
摘要： The present invention provides novel compounds and pharmaceutical compositions containing such compounds, wherein the compounds have affinity for proteoglycans. The compounds comprise an amino acid based core unit linked to positively charged moieties. The compounds further comprise at least one imaging moiety detectable in in vivo imaging making the compounds useful as diagnostic contrast agents for imaging of proteoglycans, such as heparan sulphate proteoglycans.
摘要翻译：本发明提供含有这些化合物的新化合物和药物组合物，其中化合物对蛋白聚糖具有亲和力。所述化合物包含与带正电荷部分连接的基于氨基酸的核心单元。所述化合物还包含在体内成像中可检测的至少一个成像部分，使得该化合物可用作蛋白聚糖成像的诊断造影剂，例如硫酸乙酰肝素蛋白聚糖。

10. 发明授权

US08216548B2 Radiofluorination methods 失效
标题翻译：放射性氟化方法
公开(公告)号：US08216548B2
公开(公告)日：2012-07-10
申请号：US12518728
申请日：2007-12-27
申请人： Alan Cuthbertson , Magne Solbakken , Hege Karlsen
发明人： Alan Cuthbertson , Magne Solbakken , Hege Karlsen
IPC分类号： A61K51/00
CPC分类号： A61K51/08 , A61K51/088 , C07B59/001
摘要： The invention relates to conjugates of formula (V) or (VI), their use as radiopharmaceuticals, processes for their preparation, and synthetic intermediates used in such processes.
摘要翻译：本发明涉及式（Ⅴ）或（Ⅵ）的结合物，它们作为放射性药物的用途，其制备方法以及在这些方法中使用的合成中间体。

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