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1. 发明公开

EP0932188A3 Glass formation on a semi-conductor wafer 有权
标题翻译：在半导体晶片上沉积玻璃
公开(公告)号：EP0932188A3
公开(公告)日：1999-11-17
申请号：EP98310017.3
申请日：1998-12-07
申请人： International Business Machines Corporation , SIEMENS AKTIENGESELLSCHAFT , LAM RESEARCH CORPORATION
发明人： Kirchhof, Markus , Chakravarti, Ashima , Ilg, Matthias , McKinley, Kevin A. , Nguyen, Son V. , Shapiro, Michael J.
IPC分类号： H01L21/316 , H01L21/3105
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/31625 , H01L21/31629
摘要： An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free layer on the substrate for structures having gaps as narrow as 0.10 microns and with aspect ratios of 6:1. The reactant gases include sources of boron and phosphorous dopants, oxygen and a mixture of TEOS and FTES. Using a mixture of TEOS and FTES in a low pressure CVD process provides a F-BPSG layer having the above enhanced characteristics. Preferably the glass deposition is performed at a temperature of about 750-850°C and a pressure of 1 to 3 torr to provide for in situ reflow of the F-BPSG during the deposition process. An anneal is also preferred under similar conditions in the same chemical vapor deposition chamber to further planarize the F-BPSG surface.

2. 发明授权

EP0932188B1 Glass formation on a semi-conductor wafer 有权
标题翻译：在半导体晶片上沉积玻璃
公开(公告)号：EP0932188B1
公开(公告)日：2005-10-26
申请号：EP98310017.3
申请日：1998-12-07
申请人： International Business Machines Corporation , SIEMENS AKTIENGESELLSCHAFT , LAM RESEARCH CORPORATION
发明人： Kirchhof, Markus , Chakravarti, Ashima , Ilg, Matthias , McKinley, Kevin A. , Nguyen, Son V. , Shapiro, Michael J.
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/31625 , H01L21/31629

3. 发明公开

EP0932188A2 Glass formation on a semi-conductor wafer 有权
标题翻译： Abscheidung von Glasübereine Halbleiterscheibe
公开(公告)号：EP0932188A2
公开(公告)日：1999-07-28
申请号：EP98310017.3
申请日：1998-12-07
申请人： International Business Machines Corporation , SIEMENS AKTIENGESELLSCHAFT , LAM RESEARCH CORPORATION
发明人： Kirchhof, Markus , Chakravarti, Ashima , Ilg, Matthias , McKinley, Kevin A. , Nguyen, Son V. , Shapiro, Michael J.
IPC分类号： H01L21/316 , H01L21/3105
CPC分类号： H01L21/02271 , C23C16/401 , H01L21/02131 , H01L21/02211 , H01L21/31625 , H01L21/31629
摘要： An apparatus and method are provided for forming a fluorine doped borophosphosilicate (F-BPSG) glass on a semiconductor device using a low pressure chemical vapor deposition process. The F-BPSG glass exhibits a substantially void-free and particle-free layer on the substrate for structures having gaps as narrow as 0.10 microns and with aspect ratios of 6:1. The reactant gases include sources of boron and phosphorous dopants, oxygen and a mixture of TEOS and FTES. Using a mixture of TEOS and FTES in a low pressure CVD process provides a F-BPSG layer having the above enhanced characteristics. Preferably the glass deposition is performed at a temperature of about 750-850°C and a pressure of 1 to 3 torr to provide for in situ reflow of the F-BPSG during the deposition process. An anneal is also preferred under similar conditions in the same chemical vapor deposition chamber to further planarize the F-BPSG surface.
摘要翻译：提供了一种用于在半导体器件上使用低压化学气相沉积工艺形成氟掺杂硼磷硅酸（F-BPSG）玻璃的装置和方法。 F-BPSG玻璃在衬底上表现出基本上无空隙和无颗粒的层，其结构具有窄至0.10微米的间隙，并且纵横比为6:1。反应物气体包括硼和磷掺杂剂的源，氧和TEOS和FTES的混合物。在低压CVD工艺中使用TEOS和FTES的混合物提供了具有上述增强特性的F-BPSG层。优选地，玻璃沉积在约750-850℃的温度和1至3托的压力下进行，以在沉积过程中提供F-BPSG的原位回流。在相同的化学气相沉积室中在类似的条件下退火也是优选的，以进一步平坦化F-BPSG表面。

4. 发明公开

EP0932186A2 Improved polycide 审中-公开
标题翻译：苦味多糖
公开(公告)号：EP0932186A2
公开(公告)日：1999-07-28
申请号：EP99100773.3
申请日：1999-01-16
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Ilg, Matthias , Faltermeier, Johnathan , Srinivasan, Radhika
IPC分类号： H01L21/28 , H01L29/49
CPC分类号： H01L29/4933 , H01L21/28061
摘要： A reduced metal-rich interface between a poly and metal silicide layer is achieved by insitu doping the metal silicide layer.
摘要翻译：多金属硅化物层和金属硅化物层之间的还原金属富集界面是通过掺杂金属硅化物层来实现的。

5. 发明公开

EP0932187A2 Trench etching using borosilicate glass mask 有权
标题翻译： Grabenätzen手套Borosilikatglas-Maske
公开(公告)号：EP0932187A2
公开(公告)日：1999-07-28
申请号：EP98309900.3
申请日：1998-12-03
申请人： International Business Machines Corporation , SIEMENS AKTIENGESELLSCHAFT , KABUSHIKI KAISHA TOSHIBA
发明人： Ilg, Matthias , Kleinhenz, Richard L. , Nadahara, Soichi , Nunez, Ronald W. , Penner, Klaus , Roithner, Klaus , Srinivasan, Radhika , Sugimoto, Shigeki
IPC分类号： H01L21/308
CPC分类号： H01L21/3081
摘要： An improved method for forming semiconductor substrates using BSG avoids the problems associated with conventional TEOS hard mask techniques. The methods comprises providing a semiconductor substrate 1 and applying a conformal layer of borosilicate glass (BSG) 40 on the substrate. A photoresist layer 60 is then formed over the BSG layer and pattern to expose a desired portion of a layer underlying the photoresist layer. Anisotropical etching is then performed through the exposed portion of the underlying layer, through any other layers lying between the photoresist layer and the semiconductor substrate, and into the semiconductor substrate, thereby forming a trench in the semiconductor substrate. Preferably, one or more dielectric layers 10, 20 are present on the substrate surface prior to application of the BSG layer. One or more chemical barrier and/or organic antireflective coating layers 50 may be applied over the BSG layer between the BSG layer and the photoresist layer. The method is especially useful for forming deep trenches in silicon substrates with pad dielectric layers.
摘要翻译：使用BSG形成半导体衬底的改进方法避免了与常规TEOS硬掩模技术相关的问题。所述方法包括提供半导体衬底1并在衬底上施加硼硅酸盐玻璃（BSG）40的共形层。然后在BSG层和图案上形成光致抗蚀剂层60以暴露光致抗蚀剂层下面的层的期望部分。然后通过底层的暴露部分，通过位于光致抗蚀剂层和半导体衬底之间的任何其它层，并进入半导体衬底，从而在半导体衬底中形成沟槽，进行非热蚀刻蚀刻。优选地，在施加BSG层之前，在衬底表面上存在一个或多个电介质层10,20。可以在BSG层和光致抗蚀剂层之间的BSG层上施加一个或多个化学屏障和/或有机抗反射涂层50。该方法对于在具有焊盘介电层的硅衬底中形成深沟槽特别有用。

6. 发明公开

EP0932187A3 Trench etching using borosilicate glass mask 有权
标题翻译：由硼硅玻璃掩模的手段沟槽蚀刻
公开(公告)号：EP0932187A3
公开(公告)日：2003-02-26
申请号：EP98309900.3
申请日：1998-12-03
申请人： International Business Machines Corporation , SIEMENS AKTIENGESELLSCHAFT , KABUSHIKI KAISHA TOSHIBA
发明人： Ilg, Matthias , Kleinhenz, Richard L. , Nadahara, Soichi , Nunez, Ronald W. , Penner, Klaus , Roithner, Klaus , Srinivasan, Radhika , Sugimoto, Shigeki
IPC分类号： H01L21/308
CPC分类号： H01L21/3081
摘要： An improved method for forming semiconductor substrates using BSG avoids the problems associated with conventional TEOS hard mask techniques. The methods comprises providing a semiconductor substrate 1 and applying a conformal layer of borosilicate glass (BSG) 40 on the substrate. A photoresist layer 60 is then formed over the BSG layer and pattern to expose a desired portion of a layer underlying the photoresist layer. Anisotropical etching is then performed through the exposed portion of the underlying layer, through any other layers lying between the photoresist layer and the semiconductor substrate, and into the semiconductor substrate, thereby forming a trench in the semiconductor substrate. Preferably, one or more dielectric layers 10, 20 are present on the substrate surface prior to application of the BSG layer. One or more chemical barrier and/or organic antireflective coating layers 50 may be applied over the BSG layer between the BSG layer and the photoresist layer. The method is especially useful for forming deep trenches in silicon substrates with pad dielectric layers.

7. 发明公开

EP0932186A3 Improved polycide 审中-公开
标题翻译：改进的polycide
公开(公告)号：EP0932186A3
公开(公告)日：1999-08-18
申请号：EP99100773.3
申请日：1999-01-16
申请人： SIEMENS AKTIENGESELLSCHAFT , International Business Machines Corporation
发明人： Ilg, Matthias , Faltermeier, Johnathan , Srinivasan, Radhika
IPC分类号： H01L21/28 , H01L29/49
CPC分类号： H01L29/4933 , H01L21/28061
摘要： A reduced metal-rich interface between a poly and metal silicide layer is achieved by insitu doping the metal silicide layer.
摘要翻译：通过原位掺杂金属硅化物层来实现多晶硅和金属硅化物层之间的减少的富金属界面。

8. 发明授权

EP0932187B1 Trench etching using borosilicate glass mask 有权
标题翻译：由硼硅玻璃掩模的手段沟槽蚀刻
公开(公告)号：EP0932187B1
公开(公告)日：2005-05-11
申请号：EP98309900.3
申请日：1998-12-03
申请人： International Business Machines Corporation , Infineon Technologies AG , KABUSHIKI KAISHA TOSHIBA
发明人： Ilg, Matthias , Kleinhenz, Richard L. , Nadahara, Soichi , Nunez, Ronald W. , Penner, Klaus , Roithner, Klaus , Srinivasan, Radhika , Sugimoto, Shigeki
IPC分类号： H01L21/308
CPC分类号： H01L21/3081

9. 发明公开

EP0908941A3 Deposition of carbon into nitride layer for improved selectivity of oxide to nitride etchrate for self aligned contact etching 有权
标题翻译：在生产的自对准接触的氮化物层用于提高蚀刻选择性碳的添加
公开(公告)号：EP0908941A3
公开(公告)日：2004-02-11
申请号：EP98117570.6
申请日：1998-09-16
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Spuler, Bruno , Wittmann, Juergen , Gutsche, Martin , Bergner, Wolfgang , Ilg, Matthias
IPC分类号： H01L21/60 , H01L21/314 , H01L21/318 , C23C16/36
CPC分类号： H01L21/76897 , H01L21/3185
摘要： A method for forming a Self Aligned Contact in a semiconductor device includes incorporating carbon into a nitride layer during or following the formation of the nitride layer on a semiconductor substrate.
摘要翻译：一种用于在半导体器件中形成自对准接触方法包括在结合进碳的氮化物层或继氮化物层的上的半导体衬底形成。

10. 发明公开

EP0908946A3 Improved gapfill of semiconductor structure using doped silicate glasses 有权
标题翻译： VerbesserteLückenfüllungvon Halbleiterstruktur unter Verwendung von dotierten Silkatglas
公开(公告)号：EP0908946A3
公开(公告)日：1999-08-11
申请号：EP98118244.7
申请日：1998-09-25
申请人： SIEMENS AKTIENGESELLSCHAFT
发明人： Kirchhoff, Markus , Ilg, Matthias
IPC分类号： H01L21/768
CPC分类号： H01L21/76229 , H01L21/76837
摘要： Improved gap fill of narrow spaces is achieved by using a doped silicate glass having a dopant concentration in a bottom portion thereof which is greater than an amount which causes surface crystal growth and in an upper portion thereof having a lower dopant concentration such that the overall dopant concentration of the doped silicate glass is below that which causes surface crystal growth.
摘要翻译：通过使用掺杂的硅酸盐玻璃的底部的掺杂浓度大于引起表面晶体生长的量和掺杂浓度较低的掺杂浓度的上部，使得掺杂剂的掺杂浓度掺杂的硅酸盐玻璃的浓度低于引起表面晶体生长的浓度。

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