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1. 发明申请

US20140035570A1 SINGLE-CHIP PUSH-PULL BRIDGE-TYPE MAGNETIC FIELD SENSOR 有权
标题翻译：单片推拉式桥式磁场传感器
公开(公告)号：US20140035570A1
公开(公告)日：2014-02-06
申请号：US14009912
申请日：2012-04-01
申请人： Insik Jin , Xiaofeng Lei , James Geza Deak , Weifeng Shen , Songsheng Xue , Wei Li
发明人： Insik Jin , Xiaofeng Lei , James Geza Deak , Weifeng Shen , Songsheng Xue , Wei Li
IPC分类号： G01R33/09
CPC分类号： G01R33/09 , G01D5/145 , G01R33/0005 , G01R33/0011 , G01R33/098 , G06Q10/00 , G06Q2220/00 , G07F1/00 , H01L27/22 , H01L43/08
摘要： The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements.
摘要翻译：本发明公开了利用片上永磁体的由磁阻元件构成的单片推挽桥式传感器的设计。永磁体被定向成相邻传感器桥臂的自由层的预定磁化方向，使得它们相对于相同感测方向指向不同的方向，从而能够进行推挽操作。本发明的推挽桥式传感器集成在单个芯片上。此外，公开了片上线圈以复位或校准磁阻元件的自由层的磁化方向。

2. 发明授权

US09664754B2 Single chip push-pull bridge-type magnetic field sensor 有权
公开(公告)号：US09664754B2
公开(公告)日：2017-05-30
申请号：US14009912
申请日：2012-04-01
申请人： Insik Jin , Xiaofeng Lei , James Geza Deak , Weifeng Shen , Songsheng Xue , Wei Li
发明人： Insik Jin , Xiaofeng Lei , James Geza Deak , Weifeng Shen , Songsheng Xue , Wei Li
IPC分类号： G01R33/02 , G01R33/09 , H01L27/22 , H01L43/08 , G01D5/14 , G07F1/00 , G06Q10/00
CPC分类号： G01R33/09 , G01D5/145 , G01R33/0005 , G01R33/0011 , G01R33/098 , G06Q10/00 , G06Q2220/00 , G07F1/00 , H01L27/22 , H01L43/08
摘要： The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements.

3. 发明授权

US09575143B2 Single-chip two-axis magnetic field sensor 有权
标题翻译：单芯片双轴磁场传感器
公开(公告)号：US09575143B2
公开(公告)日：2017-02-21
申请号：US14110106
申请日：2012-05-23
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.
摘要翻译：本发明公开了一种基于磁性隧道结（MTJ）元件和集成在半导体衬底上的永磁体的单芯片双轴磁场传感器的设计，以产生检测正交磁场分量的两种传感器桥。正交磁场分量检测能力来自可以通过改变MTJ元件的形状和由永磁体产生的偏置场来产生的不同类型的传感器桥。因为永磁体可以在不同传感器桥上产生正交偏置场，所以可以使用单个固定层来设置两个传感器桥的方向。这是有利的，因为它允许在单个半导体芯片上制造双轴传感器，而不需要诸如局部加热或具有不同钉扎层设置方向的多个磁阻膜的沉积等专门的处理技术。

4. 发明授权

US09234948B2 Single-package bridge-type magnetic field sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US09234948B2
公开(公告)日：2016-01-12
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/02 , G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

5. 发明申请

US20140035573A1 SINGLE-CHIP TWO-AXIS MAGNETIC FIELD SENSOR 有权
标题翻译：单芯片双轴磁场传感器
公开(公告)号：US20140035573A1
公开(公告)日：2014-02-06
申请号：US14110106
申请日：2012-05-23
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Xiaofeng Lei , Songsheng Xue
IPC分类号： G01R33/09
CPC分类号： G01R33/098
摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions.
摘要翻译：本发明公开了一种基于磁性隧道结（MTJ）元件和集成在半导体衬底上的永磁体的单芯片双轴磁场传感器的设计，以产生检测正交磁场分量的两种传感器桥。正交磁场分量检测能力来自可以通过改变MTJ元件的形状和由永磁体产生的偏置场来产生的不同类型的传感器桥。因为永磁体可以在不同传感器桥上产生正交偏置场，所以可以使用单个固定层来设置两个传感器桥的方向。这是有利的，因为它允许在单个半导体芯片上制造双轴传感器，而不需要诸如局部加热或具有不同钉扎层设置方向的多个磁阻膜的沉积等专门的处理技术。

6. 发明授权

US09123877B2 Single-chip bridge-type magnetic field sensor and preparation method thereof 有权
标题翻译：单片桥式磁场传感器及其制备方法
公开(公告)号：US09123877B2
公开(公告)日：2015-09-01
申请号：US14009834
申请日：2012-04-01
申请人： Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
发明人： Xiaofeng Lei , Insik Jin , James Geza Deak , Weifeng Shen , Mingfeng Liu , Songsheng Xue
IPC分类号： H01L29/82 , H01L43/02 , G01B7/30 , G01R33/09 , G11B5/39 , B82Y10/00
CPC分类号： H01L43/12 , B82Y10/00 , G01B7/30 , G01R33/0052 , G01R33/093 , G01R33/098 , G11B5/3909 , G11B5/3993 , G11B2005/3996 , H01L43/02 , H01L43/08
摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
摘要翻译：本发明公开了一种单芯片磁传感器桥的设计和制造方法。传感器桥包括四个磁阻元件。四个磁阻元件中的每一个的钉扎层的磁化被设定在相同的方向上，但是桥的相邻臂上的磁阻元件的自由层的磁化方向相对于被钉扎层的磁化被设定在不同的角度方向。所有四个磁阻元件的自由层的磁化方向的角度的绝对值与它们的钉扎层相同。所公开的磁偏置方案使得能够将单个芯片上的推挽惠斯通电桥磁场传感器与传统的磁阻传感器设计相比具有更好的性能，更低的成本和更易于制造的能力。

7. 发明授权

US09123876B2 Single-package bridge-type magnetic-field angle sensor 有权
标题翻译：单封装桥式磁场角传感器
公开(公告)号：US09123876B2
公开(公告)日：2015-09-01
申请号：US14002738
申请日：2012-03-02
申请人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
发明人： James Geza Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
IPC分类号： H01L27/22 , H01L43/02 , G01B7/30 , G01R33/09 , H01L43/08 , G01D5/14
CPC分类号： H01L43/02 , G01B7/30 , G01D5/145 , G01R33/098 , H01L43/08
摘要： A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.
摘要翻译：公开了一种单包装桥式磁场角传感器，其包括相对于彼此相对旋转90度的一对或多对磁性隧道结传感器芯片，以分别检测正交方向上的两个磁场分量。磁场角传感器可以包括与半导体封装引线互连的一对MTJ全桥或半桥。磁场角传感器可以封装成各种低成本的标准半导体封装。

8. 发明授权

US08872292B2 Push-pull magnetoresistive sensor bridges and mass fabrication method 有权
标题翻译：推挽磁阻传感器桥梁和大量制造方法
公开(公告)号：US08872292B2
公开(公告)日：2014-10-28
申请号：US14002733
申请日：2012-03-02
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
IPC分类号： H01L27/22 , H01L25/04 , G01R33/09 , H01L43/02
CPC分类号： H01L25/04 , G01R33/093 , G01R33/098 , H01L43/02 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
摘要翻译：公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。对于平行于半导体封装表面的感测轴，传感器芯片与它们的参考方向相互对准。然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

9. 发明申请

US20130300409A1 Single-Package Bridge-Type Magnetic Field Sensor 有权
标题翻译：单包桥型磁场传感器
公开(公告)号：US20130300409A1
公开(公告)日：2013-11-14
申请号：US13979721
申请日：2011-12-31
申请人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Jianguo Wang , Songsheng Xue , Xiaojun Zhang
发明人： James Geza Deak , Insik Jin , Xiaofeng Lei , Weifeng Shen , Jianguo Wang , Songsheng Xue , Xiaojun Zhang
IPC分类号： G01R33/09
CPC分类号： G01R33/093 , G01R33/098
摘要： A magnetoresistive sensor bridge utilizing magnetic tunnel junctions is disclosed. The magnetoresistive sensor bridge is composed of one or more magnetic tunnel junction sensor chips to provide a half-bridge or full bridge sensor in a standard semiconductor package. The sensor chips may be arranged such that the pinned layers of the different chips are mutually anti-parallel to each other in order to form a push-pull bridge structure. The sensor chips are then interconnected using wire bonding. The chips can be wire-bonded to various standard semiconductor leadframes and packaged in inexpensive standard semiconductor packages. The bridge design may be push-pull or referenced. In the referenced case, the on-chip reference resistors may be implemented without magnetic shielding.
摘要翻译：公开了一种利用磁隧道结的磁阻传感器桥。磁阻传感器桥由一个或多个磁性隧道结传感器芯片组成，以在标准半导体封装中提供半桥或全桥传感器。可以将传感器芯片布置成使得不同芯片的被钉扎层彼此相互反平行以形成推挽桥结构。然后使用引线接合将传感器芯片互连。这些芯片可以引线接合到各种标准的半导体引线框架上，并以廉价的标准半导体封装封装。桥梁设计可能是推拉式或参考式。在所提及的情况下，片上参考电阻器可以在没有磁屏蔽的情况下实现。

10. 发明申请

US20140203384A1 Push-Pull Magnetoresistive Sensor Bridges and Mass Fabrication Method 有权
标题翻译：推拉式磁阻传感器桥梁和大规模制造方法
公开(公告)号：US20140203384A1
公开(公告)日：2014-07-24
申请号：US14002733
申请日：2012-03-02
申请人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
发明人： James Geza Deak , Insik Jin , Weifeng Shen , Songsheng Xue , Xiaofeng Lei , Xiaojun Zhang , Dongfeng Li
IPC分类号： H01L25/04 , H01L43/02 , G01R33/09
CPC分类号： H01L25/04 , G01R33/093 , G01R33/098 , H01L43/02 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48464 , H01L2924/00014
摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.
摘要翻译：公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。对于平行于半导体封装表面的感测轴，传感器芯片与它们的参考方向相互对准。然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

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