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    • 4. 发明授权
    • Light emitting diode
    • 发光二极管
    • US09391239B2
    • 2016-07-12
    • US14166864
    • 2014-01-29
    • Industrial Technology Research Institute
    • Yao-Jun TsaiChen-Peng HsuShih-Yi WenChi-Chin YangYu-Hsiang ChangRe-Ching LinHung-Lieh Hu
    • H01L33/40H01L33/20H01L33/38H01L33/48H01L33/62
    • H01L33/405H01L33/20H01L33/38H01L33/382H01L33/385H01L33/486H01L33/62H01L2924/0002H01L2924/00
    • A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first surface and a second surface opposite to each other and has a first region and a second region. The second semiconductor layer is disposed on the second surface. The light emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The substrate has a first conductive layer and a second conductive layer thereon. The first electrode is disposed between the second semiconductor layer and the first conductive layer. The second electrode is disposed on the first surface. The third electrode is disposed between the second region and the second conductive layer, and electrically connected to the second electrode.
    • 发光二极管包括半导体层叠结构,基板,第一电极,第二电极和第三电极。 半导体堆叠结构包括第一半导体层,第二半导体层和发光层。 第一半导体层具有彼此相对的第一表面和第二表面,并且具有第一区域和第二区域。 第二半导体层设置在第二表面上。 发光层设置在第一半导体层和第二半导体层之间。 衬底上具有第一导电层和第二导电层。 第一电极设置在第二半导体层和第一导电层之间。 第二电极设置在第一表面上。 第三电极设置在第二区域和第二导电层之间,并且电连接到第二电极。